FDD73BL/FDU73BL 3V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON), fast switching speed and extremely low R DS(ON) in a small package. Applications DC/DC converter Motor Drives June 23 Features 56 A, 3 V R DS(ON) = 9.5 mω @ V GS = V R DS(ON) = 3 mω @ V GS = 4.5 V Low gate charge Fast Switching High performance trench technology for extremely low R DS(ON) FDD73BL/FDU73BL D G D S D-PAK TO-252 (TO-252) G D S I-PAK (TO-25AA) G S Absolute Maximum Ratings TA=25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 3 V V GSS Gate-Source Voltage ±2 V I D Continuous Drain Current @T C=25 C (Note 3) 56 A P D @T A=25 C (Note a) 4 Pulsed (Note a) Power Dissipation @T C=25 C (Note 3) 6 @T A=25 C (Note a) 2.8 @T A=25 C (Note b).3 T J, T STG Operating and Storage Junction Temperature Range 55 to +75 C Thermal Characteristics R θjc Thermal Resistance, Junction-to-Case (Note ) 2.5 C/W R θja Thermal Resistance, Junction-to-Ambient (Note a) 45 R θja (Note b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD73BL FDD73BL D-PAK (TO-252) 3 2mm 25 units FDU73BL FDU73BL I-PAK (TO-25) Tube N/A 75 W 23 Fairchild Semiconductor Corp. FDD73BL/FDU73BL Rev CW)
Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) E AS Drain-Source Avalanche Energy Single Pulse, V DD = 5 V, I D= 4A 74 mj I AS Drain-Source Avalanche Current 4 A Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 25 µa 3 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa,referenced to 25 C 26 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 24 V, V GS = V µa I GSS Gate Body Leakage V GS = ±2 V, V DS = V ± na On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa.8 3 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = 25 µa,referenced to 25 C 5 mv/ C R DS(on) Static Drain Source V GS = V, I D = 4 A 7.5 9.5 On Resistance V GS = 4.5 V, I D = 2 A 9.6 3 mω I D V GS = V, = 4 A,T J=25 C 6 I D(on) On State Drain Current V GS = V, V DS = 5 V 5 A g FS Forward Transconductance V DS = V, I D = 4 A 56 S Dynamic Characteristics C iss Input Capacitance 425 pf V DS = 5 V, V GS = V, C oss Output Capacitance 35 pf f =. MHz Reverse Transfer Capacitance 5 pf C rss R G Gate Resistance V OSC = 5 mv, f =. MHz.3 pf FDD73BL/FDU73BL Switching Characteristics (Note 2) t d(on) Turn On Delay Time 2 ns t r Turn On Rise Time V DD = 5 V, I D = A, 9 8 ns t d(off) Turn Off Delay Time V GS = V, R GEN = 6 Ω 3 5 ns t f Turn Off Fall Time 3 23 ns Q g Total Gate Charge 4 2 nc Q gs Gate Source Charge V DS = 5V, V GS = 5 V I D = 4 A, 4 nc Gate Drain Charge 5 nc Q gd FDD73BL/FDU73BL Rev. B(W)
Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current 2.3 A V SD Drain Source Diode Forward Voltage V GS = V, I S = 2.3 A (Note 2).74.2 V t rr Diode Reverse Recovery Time I F = 4 A, d if/d t = A/µs 23 ns Q rr Diode Reverse Recovery Charge nc Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. FDD73BL/FDU73BL a) R θja = 45 C/W when mounted on a in 2 pad of 2 oz copper b) R θja = 96 C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% Scale : on letter size paper 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25 C and RDS(on) is at TJ(max) and VGS = V. Package current limitation is 2A FDD73BL/FDU73BL Rev. B(W)
Typical Characteristics I D, DRAIN CURRENT (A) 6 V GS =V 4.V 3.5V 5 6.V 4.5V 4 3 2 3.V.5.5 2 2.5 V DS, DRAIN-SOURCE VOLTAGE (V) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 2.8 2.6 2.4 2.2 2.8.6.4.2 V GS = 3.V 4.V 4.5V 5.V.8 2 3 4 5 6 I D, DRAIN CURRENT (A) 6.V V FDD73BL/FDU73BL Figure. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.8.3 R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6.4.2.8 I D = 4A V GS = V R DS(ON), ON-RESISTANCE (OHM).25.2.5. T A = 25 o C T A = 25 o C I D = 7A.6-5 -25 25 5 75 25 5 75 T J, JUNCTION TEMPERATURE ( o C).5 2 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withtemperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage I D, DRAIN CURRENT (A) 6 V DS = 5V 5 4 3 T A =25 o C 2 25 o C -55 o C.5 2 2.5 3 3.5 4 V GS, GATE TO SOURCE VOLTAGE (V) I S, REVERSE DRAIN CURRENT (A) V GS = V T A = 25 o C 25 o C. -55 o C....2.4.6.8.2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD73BL/FDU73BL Rev. B(W)
Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) I D = 4A V DS = V 5V 8 2V 6 4 2 CAPACITANCE (pf) 2 6 2 8 4 C ISS C OSS C RSS f = MHz V GS = V FDD73BL/FDU73BL 5 5 2 25 3 Q g, GATE CHARGE (nc) 5 5 2 25 3 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics I D, DRAIN CURRENT (A). R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 96 o C/W T A = 25 o C s DC ms ms s... V DS, DRAIN-SOURCE VOLTAGE (V) ms µs P(pk), PEAK TRANSIENT POWER (W) 8 6 4 2.. t, TIME (sec) SINGLE PULSE R θja = 96 C/W T A = 25 C Figure 9. Maximum Safe Operating Area Figure. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =.5.2..5.2. SINGLE PULSE.... t, TIME (sec) P(pk) R θja(t) = r(t) * R θja R θja = 96 C/W t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 Figure. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. FDD73BL/FDU73BL Rev. B(W)
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS TM EnSigna TM FACT DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FACT Quiet Series FAST FASTr FRFET GlobalOptoisolator GTO HiSeC I 2 C ImpliedDisconnect ISOPLANAR Across the board. Around the world. The Power Franchise Programmable Active Droop LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER SMART START SPM Stealth SuperSOT -3 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5