General Description The series ICs are under voltage detectors with a built in voltage threshold and low power consumption. The are specifically designed to accurately monitor power supplies. The use a precision on-chip voltage reference and a comparator to measure the input operating voltage. These ICs can accurately reset the system after detecting voltage at the time of switching power on and instantaneous power off in various CPU systems and other logic systems. The detect voltage thresholds are.v/.5v/.7v/.9v/.v/.v/4.v/4.5vfor AZ70/5/7/9///4/45 respectively. Built in hysteresis helps to prevent erratic operation in the presence of noise. The series are available in standard packages: TO-9 (bulk or ammo packing) and SOT-89. Features Low Current Consumption: I CCL =00µA Typical I CCH =0µA Typical Low Minimum Operating Voltage for Output Resetting: 0.8V Typical Built in Hysteresis Voltage: 50mV Typical Open Collector Output Extended Temperature Range: -40 to 85 o C Applications Low Battery Voltage Detector Power Fail Indicator Processor Reset Generator Battery Backup Control Home Electric Appliances TO-9(Bulk Packing) TO-9(Ammo Packing) SOT-89 Figure. Package Types of
Pin Configuration Z Package (TO-9(Bulk Packing)) Z Package (TO-9(Ammo Packing)) R Package (SOT-89) Figure. Pin Configuration of (Top View) Functional Block Diagram + - Figure. Functional Block Diagram of
Ordering Information AZ70 - Circuit Type Detect Voltage :.V :.V 5:.5V :.V 7:.7V 4: 4.V 9:.9V 45: 4.5V E: Lead Free G: Green TR: Tape and Reel or Ammo Blank: Bulk Package Z: TO-9 R: SOT-89 Package TO-9 SOT-89 Temperature Range -40 to 85 o C -40 to 85 o C Detect Voltage Part Number Marking ID Packing Type Lead Free Green Lead Free Green.V AZ70Z-E AZ70Z-G AZ70Z-E AZ70Z-G Bulk AZ70ZTR-E AZ70ZTR-G AZ70Z-E AZ70Z-G Ammo.5V AZ705Z-E AZ705Z-G AZ705Z-E AZ705Z-G Bulk AZ705ZTR-E AZ705ZTR-G AZ705Z-E AZ705Z-G Ammo.7V AZ707Z-E AZ707Z-G AZ707Z-E AZ707Z-G Bulk AZ707ZTR-E AZ707ZTR-G AZ707Z-E AZ707Z-G Ammo.9V AZ709Z-E AZ709Z-G AZ709Z-E AZ709Z-G Bulk AZ709ZTR-E AZ709ZTR-G AZ709Z-E AZ709Z-G Ammo.V AZ70Z-E AZ70Z-G AZ70Z-E AZ70Z-G Bulk AZ70ZTR-E AZ70ZTR-G AZ70Z-E AZ70Z-G Ammo.V AZ70Z-E AZ70Z-G AZ70Z-E AZ70Z-G Bulk AZ70ZTR-E AZ70ZTR-G AZ70Z-E AZ70Z-G Ammo 4.V AZ704Z-E AZ704Z-G AZ704Z-E AZ704Z-G Bulk AZ704ZTR-E AZ704ZTR-G AZ704Z-E AZ704Z-G Ammo 4.5V AZ7045Z-E AZ7045Z-G AZ7045Z-E AZ7045Z-G Bulk AZ7045ZTR-E AZ7045ZTR-G AZ7045Z-E AZ7045Z-G Ammo.V AZ70RTR-E AZ70RTR-G E7 G70A Tape & Reel.5V AZ705RTR-E AZ705RTR-G E75 G70G Tape & Reel.7V AZ707RTR-E AZ707RTR-G E77 G70B Tape & Reel.9V AZ709RTR-E AZ709RTR-G E79 G70C Tape & Reel.V AZ70RTR-E AZ70RTR-G E7 G70H Tape & Reel.V AZ70RTR-E AZ70RTR-G E7 G70D Tape & Reel 4.V AZ704RTR-E AZ704RTR-G E74 G70E Tape & Reel 4.5V AZ7045RTR-E AZ7045RTR-G E745 G70F Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E" suffix in the part number, are RoHS compliant. Products with "G" suffix are available in green packages.
Absolute Maximum Ratings (Note ) Parameter Symbol Value Unit Supply Voltage -0. to 0 V Power Dissipation (Package Limitations, T A =5 o C) TO-9 Package: 400 P D SOT-89 Package: 500 mw Operating Junction Temperature T J 50 o C Storage Temperature Range T STG -65 to 50 o C Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under"recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage 8 V Operating Temperature Range T A -40 85 o C 4
Electrical Characteristics T A =5 o C, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit AZ70R/Z.5..45 AZ705R/Z.5.5.65 R L =00Ω AZ707R/Z.55.7.85 Detect Voltage V DET (Note ) AZ709R/Z.75.9.05 AZ70R/Z.95..5 V V OL 0.4V AZ70R/Z.5..45 AZ704R/Z 4.05 4. 4.5 AZ7045R/Z 4.5 4.5 4.65 V Low-level Output Voltage =V DET (min)-0.05v OL R L =00Ω (Note ) 0.4 V Output Leakage Current I OH =8V 0. µa Hysteresis Voltage V HYS R L =00Ω (Note ) 0 50 00 mv Detect Voltage Temperature Coefficient V DET /(V DET T) R L =00Ω (Note ) ±0.0 % / o C Circuit Current at On Time I CCL =V DET (min)-0.05v 00 500 µa Circuit Current at Off Time I CCH =5.5V 0 50 µa Minimum Operating Voltage V OPR R L =00Ω (Note ) V OL 0.4V L Transmission Delay Time H Transmission Delay Time Output Current at On Time tphl tplh I OL Ⅰ I OL Ⅱ changed from 5.5V to V DET (min)-0.05v, R L =.0KΩ, C L =00p (Note ) changed from V DET (min)- 0.05V to 5.5V, R L =.0KΩ, C L =00p (Note ) =V DET (min)-0.05v T A =5 o C (Note 4) =V DET (min)-0.05v T A =-40 to 85 o C (Note 4) 0 6 0.8 V 0 µs 5 µs ma Thermal Resistance (Junction to Case) θ JC TO-9 7 o C/W SOT-89 74 Note : See test circuit and Figure. Note : See test circuit and Figure. Note 4: See test circuit. Adjusting the regulative power source until the reading value of voltage meter V is 0.4V, the reading value of current meter A is defined as "Output Current at On Time". 5
Electrical Characteristics (Continued) A A R L V AZ709 + 0µF V Figure 4. Test Circuit R L Input Pulse AZ709 C L 0µF + +5V Figure 5. Test Circuit V DET (min)-0.05v + 0µF AZ709 A V Figure 6. Test Circuit 6
Typical Performance Characteristics.95 00 AZ709 00 Detect Voltage (V).90.85.80 V DET+ ( Rising) V DET- ( Falling) Minimum Operating Voltage (mv) 000 900 800 700 600 500 AZ709.75-40 -0 0 0 40 60 80 Temperature ( O C) 400-40 -0 0 0 40 60 80 Temperature ( O C) Figure 7. Detect Voltage vs. Temperature Figure 8. Minimum Operating Voltage vs. Temperature 70 00 Output Current at On Time (ma) 60 50 40 0 0 AZ709 Low-level Output Voltage (mv) 75 50 5 AZ709 0-40 -0 0 0 40 60 80 Temperature ( O C) 0-40 -0 0 0 40 60 80 Temperature ( O C) Figure 9. Output Current at On Time vs. Temperature Figure 0. Low-level Output Voltage vs. Temperature 7
Typical Performance Characteristics (Continued) Time (s) Figure. Output Voltage Dynamic Response when Increases and Decreases Operating Diagram V DET+ V HYS V DET- V OPR V tphl tplh tphl tplh Figure. Timing Waveform (Note 5) Note 5: Detect voltage: V DET- Hysteresis voltage (V HYS ): V DET+ -V DET- Release voltage: V DET+ Minimum operating voltage: V OPR 8
Operating Diagram (Continued) Figure is a typical timing waveform for. In normal steady-state operation when >V DET-, the output will be in a logic high state and V is dependent upon the voltage that the pull-up resistor connected to. Here is some explanations for 's operation.. When the input voltage falls below V DET-, the output will pull down to logic low after a delay time of tphl. In general, at rated output current and, V can be pulled down to a voltage as low as within 0.4V from. (See the Electrical Characteristics section). The voltage level V DET- means the detect voltage. typical). Below minimum operating voltage, the output is undefined.. During power-up, V will remain undefined until rises above V OPR, at which time the output will become valid. V will be in its active low state while V OPR < <V DET+ (V DET+ =V DET- +V HYS ). V DET+ is the release voltage. V HYS means the hysteresis voltage and is the difference voltage between the V DET+ and V DET-. 4. When rises above V DET+, the output will be in its inactive state. After a delay time of tplh, V will be in its logic high state.. The output, V, will stay valid until falls below the minimum operating voltage, V OPR (0.8V Typical Applications +5V R 0 R.k RESET CPU LED C µf + Figure. Low Voltage Indicator Figure 4. CPU Resetting Circuit 9
Mechanical Dimensions TO-9(Bulk Packing) Unit: mm(inch).000(0.09).400(0.055).40(0.5) MIN.00(0.0).700(0.46) 0.000(0.000) 0.80(0.05) Φ.600(0.06) MAX 4.400(0.7) 4.800(0.89) 0.60(0.04) 0.760(0.00).500(0.49) 5.500(0.60) 0.0(0.0) 0.50(0.00) 4.00(0.69) 4.700(0.85).70(0.050) TYP.40(0.095).660(0.05) 0
Mechanical Dimensions (Continued) TO-9(Ammo Packing) Unit: mm(inch) 4.400(0.7) 4.800(0.89). 00(0.04). 400(0.055). 40(0.5) MIN 4.00(0.69) 4.700(0.85).70(0.050) Typ.00(0.0).800(0.50) 0.0(0. 0) 0.50(0.00).500(0.098) 4.000(0.57) 0.000(0.000) 0.80(0.05) Φ.600(0.06) MAX Φ.500(0.49) 4.500(0.57).000(0. 5) 5.000(0.59) 0. 80(0.05) 0.550(0.0 ).540(0.00) Typ
Mechanical Dimensions (Continued) SOT-89 Unit: mm(inch).550(0.06)ref 4.400(0.7) 4.600(0.8).00(0.04)REF.400(0.055).600(0.06) 45.950(0.56) 4.50(0.67).00(0.09).600(0.0).060(0.08)REF 0.900(0.05).00(0.04) 0.0(0.0) 0.50(0.00).000(0.8) TYP 0.0(0.0) 0.50(0.00) 0.480(0.09) 0.50(0.04) 0.450(0.08) 0.500(0.059).800(0.07) 0.0(0.0)REF.0(0.087)REF.60(0.064)REF R0.50(0.006) 0
http://www.bcdsemi.com IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, 004, China 800 Yi Advanced Shan Road, Analog Shanghai Circuits 00, (Shanghai) China Corporation Tel: 800, +86--4666, Yi Shan Road, Shanghai Fax: +86--4677 00, China Tel: +86--6485 8F, Zone B, 900, 49, Yi Fax: Shan +86--5450 Road, Shanghai 000800, China Tel: +86--6485 49, Fax: +86--5450 0008 Tel: +86--6495 959, Fax: +86--6485 967 REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 0, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave..S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 98-, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan 4F, 98-, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD 090 Semiconductor Huntwood Ave. Corporation Hayward, 090 CA 94544, Huntwood USA Ave. Hayward, Room Tel: +86-755-886 E, 5F, Noble 795 Center, No.006, rd Fuzhong Road, Futian District, Shenzhen 5806, China Tel: +886--656 Taiwan 808 CA Tel : 94544, +-50-4-988 U.S.A Tel: Fax: +86-755-886 795 7865 Fax: +86-755-886 7865 Fax: +886--656 Tel: +886--656 806808 Fax: +886--656 806 Tel Fax: : +-50-4-988 +-50-4-788 Fax: +-50-4-788