Effects of Source Field Plate and Pt- gate Metalliza8on on AlGaN/GaN HEMTs Reliability

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Effects of Source Field Plate and Pt- gate Metalliza8on on AlGaN/GaN HEMTs Reliability Robert Finch, Lu Liu, Chien- Fong Lo, Tsung- Sheng Kang, David A. Cullen, Jinhyung Kim, David. J. Smith, S. J. Pearton and Fan Ren April 12, 211

Effects of Source Field Plate and Pt- gate Metalliza8on on AlGaN/GaN HEMTs Reliability FLOORS Pt- gated HEMT S Pt AlGaN/GaN D - 5-6 - 7 - VDS SiNx - 8 125 15 Field Plate - 4-2 - 3-4 - 5-6 - 7-8. N i/a u g a te P t/t i/a u g a te - 8-6 F o rw ard B ias.5 1. - 4-2 - 5-6 - 7-8 - 9 - - 11-12 Stressed device - 5-6 - 7-8 - 9 1 NFP FP -1-2 -3 Vcri - -2-3 -4-5 -6-7 VGS - N i/a u g a te P t/t i/a u g a te - 11 1.5 V g (V ) 2. 2.5-12 t=, As Built -3-4 -5-6 -7 I D S (m A /m m ) IG (A) 75-3 R evers e B ias IG (ma/mm) 5 Ig (m A /m m ) 25-2 Ig (A ) Ig (m A /m m ) NFP FP 2 IDS (ma/mm) G Step =.5V 3 Stressed device Ig (A ) Source- Field Plate HEMT 4 V = V Fresh device 5 P t- g ated H E MT s Ni- g ated H E MT s 4 V G = V, s tep = - 1V F res h S tres s ed 3 2 1 2 3 4 5 1 2 3 V D S ( V ) V D S ( V ) t>, Degrada4on V G = V, s tep = - 1V F res h S tres s ed 2 4

Proposed Degradation Mechanisms Ø Hot- electron- induced trap degrada8on (Meneghesso, 28); Ø Crystallographic- defects through the inverse piezoelectric effect (del Alamo, 28); Ø Electric- field driven mechanism; Ø Gate sinking; Ø Ohmic contact degrada8on (Meneghesso, 1998). 3

Micrographs With Field Plate: Without Field Plate: G G D S D S 4

Device Schematic & TEM result Pt deposition Field Plate Ohmic source contact Gate SiN x passivation Ohmic drain conta ield Plate GaN Phase nucleating at interface 1µm S Pt SiNx D AlGaN/GaN 5

Drain I-V Characteristics (ma) 4 3 2 V G = V Step =.5V NFP FP 4 3 2 (ma/mm) 25 5 75 125 15 V DS 6

Off-state Stress Result I G (ma/mm) 1-1 -2 NFP FP -3-4 -5-6 I G (A) -3 - -2-3 -4-5 -6-7 V GS V cri -7 7

Electric Field Simulation 2- D simula8on of the electric field distribu8on between Source and Drain. ATLAS/BLAZE (AutomaGcally tuned linear algebra sohware) Electric Field (MV/cm) 3. 2.5 2. 1.5 1..5 S G No F ield P late F ield P late Vg=- 5V V DS =3V. 1 2 3 4 5 6 7 8 9 Position (µm) D 8

I G, I GS and I GD as a function of V GS I G - 4 I GS Ig (ma/mm) - 1-2 - 3 I GD Vcrit - 5-6 - 7 Ig (A) - 4-2 - 4-6 - 8 V GS - 8 9

TEM Result Fresh device Stressed device Source side of gate edge Drain side of gate edge Dr. Smith, ASU

TEM Result Au Ni AlGaN Metal diffusion GaN TD 11

STEM-EELS Line Scan 12 12 8 6 4 2 2 4 6 8 12 14 16 18 a a Distance (nm) b Ni N O Ni c Counts ( 5 ) 8 6 4 2 b 2 4 6 8 12 14 16 18 Distance (nm) N O Ni Counts ( 5 ) 12 8 6 4 2 c N O Ni nm AlGaN 2 3 4 Distance (nm) 12

Field-plate Conclusions By employing Source field plate the device s cri8cal voltage has been improved from - 4 to - 65V, and breakdown voltage from 5 to 15V. 13

DC characteristics of Pt- and Ni-gated HEMTs (ma/mm) 6 4 2 Ni/Au gate Pt/Ti/Au gate 1 2 3 4 5 V DS 12 8 4 (ma) Ig (ma/mm) Ig (ma/mm) -2 Reverse Bias -3-4 -5-6 -7-8 - 2-3 - 4-5 - 6-7 - 8 Pt/Ti/Au gate Ni/Au gate - -8-6 -4-2 Forward Bias..5 1. 1.5 2. 2.5 Vg Ni/Au gate P t/ti/au gate -5-6 -7-8 -9 - -11-12 - 5-6 - 7-8 - 9 - - 11-12 Ig (A) Ig (A) 14

Comparison of V cri I G (ma/mm) 3 1-1 - 3-5 Ni- gated HEMTs V DS = +5V - 1-3 - 5-7 - 9 I G (A) I G (ma/mm) 3 Pt- gated HEMTs 1 V DS = +5V - 1-3 - 5-1 - 3-5 - 7-9 - 7-2 - 4-6 - 8 - V GS - 7-2 - 4-6 - 8 - V GS 15

Comparison of Drain I-V (ma/mm) 5 4 3 2 Ni- g ated H E MT s F resh S tressed V G = V, step = - 1V 8 6 4 2 (ma) (ma/mm) 5 4 3 2 P t- g ated H E MT s F resh S tressed V G = V, step = - 1V 8 6 4 2 1 2 3 4 5 V DS 1 2 3 4 5 V DS 16

omparison of Gate leakage current Ig (ma/mm) - 2-3 - 4-5 - 6-7 - 8 Reverse Bias Pt- gate Ni- gate F resh S tressed - - 8-6 - 4-2 V G - 5-6 - 7-8 - 9 - - 11-12 Ig (A) Ig (ma/mm) - 2-3 - 4-5 - 6-7 - 8 Pt- gate 1 2 3 V G Forward Bias Ni- gate F resh S tressed - 5-6 - 7-8 - 9 - - 11-12 17

omparison of sub-threshold leakage current (ma/mm) V DS = - 1-2 - 3-4 - 5 V 2V 3V 4V Ni- g ated H E MT s - 6-6 - 5-4 - 3 V GS - 4-5 - 6-7 - 8-9 (A) (ma/mm) V DS = - 1-2 - 3-4 - 5 V 2V 3V 4V Pt- gated HEMTs - 6-6 - 5-4 - 3 V GS - 4-5 - 6-7 - 8-9 18

omparison of ON/OFF ratio, I G (ma/mm) 6 Fresh Stressed 4 2-2 - 4-6 I G V DS = +4V Ni- gated HEMTs - 8-6 - 5-4 - 3-2 - 1 1 V G 2-2 - 4-6 - 8 -, I G (A), I G (ma/mm) 6 Fresh Stressed P t- g ated H E MT s 4 2-2 - 4-6 I G V DS = +4V - 8-6 - 5-4 - 3-2 - 1 1 V G 2-2 - 4-6 - 8 -, I G (A) 19

ummary of parameters before/after stress Pt/Ti/Au Ni/Au Subthreshold slope (mv/dec) On/Off ra8o Ideality factor Scho]ky barrier height Fresh 65.7 1.73 8 1.61 1.25 Stressed 67.3 1.44 8 1.53 1.26 Fresh 111.7 1.21 7 1.72 1.17 Stressed 171.8 2.5 5 4.62.53 2

XPS results As deposit Post annealed 5 Pt on GaN As deposit 1.Pt 4f 7/2 5 Pt on GaN 4 Post-anneal 1.Pt 4f 7/2 Intensity N(E) 4 3 2 1 2 2.Pt 4f 5/2 Intensity N(E) 3 2 1 2 2.Pt 4f 5/2 65 7 75 8 65 7 75 8 Binding Energy (ev) Binding Energy (ev) 21

XPS results As deposit Post annealed Intensity N(E) 25 2 15 Ni on GaN 3 1 2 As deposit 1.Ni-O 2.Ni satellite 3.Ni metal Intensity N(E) 25 2 15 Ni on GaN 1 Post-anneal 1.Ni-O 2.Ni satellite 3.Ni metal 5 85 855 86 865 87 Binding Energy (ev) 5 2 3 847.5 85. 852.5 855. 857.5 Binding Energy (ev) 22

XPS results As deposit Post annealed Intensity N(E) 2 15 5 Ni on GaN 2 1 As deposit 1.Ga-O 2.Ni-O (e) 3 25 2 15 5 Ni on GaN 2 1 Post-anneal 1.Ga-O 2.Ni-O (f) 525 53 535 Binding Energy (ev) 527.5 53. 532.5 Binding Energy (ev) 23

Pt gate Conclusion Using Pt gate metalliza8on, the cri8cal voltage of electrical stress has been enhanced from - 55V with Ni gate to greater than - V with Pt gate. The reliability of AlGaN/GaN HEMTs have been enhanced significantly. 24

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