DT123 sris PNP -100m -50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Paramtr V CC I C(MX.) R 1 R 2 Valu 50V 100m 2.2k 2.2k Faturs 1) Built-In Biasing Rsistors, R 1 = R 2 = 2.2k. Outlin VMT3 MT3 GND 2) Built-in bias rsistors nabl th configuration of an invrtr circuit without conncting xtrnal input rsistors (s quivalnt circuit). 3) Th bias rsistors consist of thin-film rsistors with complt isolation to allow ngativ biasing Innr circuit of th input. Thy also hav th advantag of R1 compltly liminating parasitic ffcts. 4) Only th on/off conditions nd to b st for opration, making th circuit dsign asy. 5) Complmntary NPN Typs vailabl.(dtc123 sris) 6) Lad Fr/RoHS Compliant. DT123M (SC-105) UMT3 SMT3 GND DT123U SOT-323 (SC-70) R2 GND DT123 SOT-416 (SC-75) GND DT123K SOT-346 (SC-59) GND(+) pplication Switching circuit, Invrtr circuit, Intrfac circuit, Drivr circuit GND(+) Packaging spcifications Part No. Packag Packag siz (mm) Taping cod Rl siz (mm) Tap width (mm) Basic ordring unit (pcs) Marking DT123M VMT3 1212 T2L 180 8 8,000 12 DT123 MT3 1616 TL 180 8 3,000 12 DT123U UMT3 2021 T106 180 8 3,000 12 DT123K SMT3 2928 T146 180 8 3,000 12 2012 ROHM Co., Ltd. ll rights rsrvd. 1/8 2012.02 - Rv.C
DT123 sris Data Sht bsolut maximum ratings (Ta = 25 C) Paramtr Symbol Valus Unit Supply voltag Input voltag Output currnt V CC 50 V V 12 to 10 V I O 100 m Collctor currnt I C(MX.) *1 100 m Powr dissipation DT123M DT123 DT123U DT123K P D *2 150 mw 200 mw Junction tmpratur Rang of storag tmpratur T j 150 C T stg 55 to 150 C lctrical charactristics(ta = 25 C) Paramtr Symbol Conditions Min. Typ. Max. Unit Input voltag V I(off) V CC = 5V, I O = 100μ - - V I(on) V O = 0.3V, I O = 10m 3 - - 0.5 V Output voltag V O(on) I O / I I = 10m / 0.5m - 0.1 0.3 V Input currnt I I V I = -5V - - 3.8 m Output currnt I O(off) V CC = 50V, V I = 0V - - 0.5 DC currnt gain G I V O = 5V, I O = 5m 20 - - - Input rsistanc R 1-1.54 2.2 2.86 k Rsistanc ratio R 2 /R 1-0.8 1 1.2 - Transition frquncy f T *1 V C = 10V, I = 5m, f = 100MHz *1 Charactristics of built-in transistor *2 ach trminal mountd on a rfrnc footprint - 250 - MHz 2012 ROHM Co., Ltd. ll rights rsrvd. 2/8 2012.02 - Rv.C
DT123 sris Data Sht lctrical charactristic curvs(ta = 25 C) Fig.1 Input voltag vs. output currnt (ON charactristics) Fig.2 Output currnt vs. input voltag (OFF charactristics) PUT VOLTG : V I(on) [V] 100 50 20 10 5 2 1 500m 200m Ta = 40 o C 100 o C 25 o C VO = 0.3V 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m PUT CURRNT : I O [] 10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ Vcc = 5V Ta = 100 o C 25 o C 40 o C 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 PUT CURRNT : I O [] PUT VOLTG : V I(off) [V] PUT CURRNT : I O [m] -100-80 -60-40 -20 0 Fig.3 Output currnt vs. output voltag Ta=25ºC 0-5 -10 I I = 900μ 850μ 800μ 750μ 700μ 650μ 600μ 550μ 500μ 450μ 400μ 0 DC CURRNT G : G I Fig.4 DC currnt gain vs. output currnt 1k 500 200 100 50 20 10 5 2 Ta = 100 o C 25 o C 40 o C VO = 5V 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m PUT VOLTG : V O [V] PUT CURRNT : I O [] 2012 ROHM Co., Ltd. ll rights rsrvd. 3/8 2012.02 - Rv.C
DT123 sris Data Sht lctrical charactristic curvs(ta = 25 C) Fig.5 Output voltag vs. output currnt 1 500m IO/II = 20 PUT VOLTG : V O(on) [V] 200m 100m 50m 20m 10m 5m 2m Ta = 100 o C 25 o C 40 o C 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m PUT CURRNT : I O [] 2012 ROHM Co., Ltd. ll rights rsrvd. 4/8 2012.02 - Rv.C
DT123 sris Data Sht Dimnsions (Unit : mm) VMT3 D b1 c H L Lp b x S b3 1 1 S b2 Dimnsion in mm/inchs Pattrm of trminal position aras M MX M MX 0.45 0.55 0.018 0.022 1 0.00 0.10 0 0.004 b 0.17 0.27 0.007 0.011 b1 0.27 0.37 0.011 0.015 c 0.08 0.18 0.003 0.007 D 1.10 1.30 0.043 0.051 0.70 0.90 0.028 0.035 0.40 0.02 H 1.10 1.30 0.043 0.051 L 0.10 0.30 0.004 - Lp 0.20 0.40 0.008 - x - 0.10-0.004 M MX M MX 1 0.80 0.03 b2-0.37-0.015 b3-0.47-0.019-0.50-0.02 2012 ROHM Co., Ltd. ll rights rsrvd. 5/8 2012.02 - Rv.C
DT123 sris Data Sht Dimnsions (Unit : mm) MT3 D b1 c Q Lp H L1 b x S 3 b3 1 1 S b2 Pattrm of trminal position aras M MX M MX 0.60 0.80 0.024 0.031 1 0.00 0.10 0 0.004 3 0.25 0.01 b 0.15 0.30 0.006 0.012 b1 0.25 0.40 0.01 0.016 c 0.10 0.20 0.004 0.008 D 1.50 1.70 0.059 0.067 0.70 0.90 0.028 0.035 0.50 0.02 H 1.40 1.80 0.055 0.071 L1 0.10-0.004 - Lp 0.15-0.006 - Q 0.05 0.25 0.002 0.01 x - 0.10-0.004 M MX M MX 1 1.10 0.04 b2-0.40-0.016 b3-0.50-0.02-0.70-0.028 Dimnsion in mm/inchs 2012 ROHM Co., Ltd. ll rights rsrvd. 6/8 2012.02 - Rv.C
DT123 sris Data Sht Dimnsions (Unit : mm) UMT3 D c Q L1 Lp b x S 3 H 1 1 S b2 Dimnsion in mm/inchs Pattrm of trminal position aras M MX M MX 0.80 1.00 0.031 0.039 1 0.00 0.10 0 0.004 3 0.25 0.01 b 0.15 0.30 0.006 0.012 c 0.10 0.20 0.004 0.008 D 1.90 2.10 0.075 0.083 1.15 1.35 0.045 0.053 0.65 0.03 H 2.00 2.20 0.079 0.087 L1 0.20 0.50 0.008 0.02 Lp 0.25 0.55 0.01 0.022 Q 0.10 0.30 0.004 0.012 x - 0.10-0.004 M MX M MX 1 1.55 0.06 b2-0.50-0.02-0.65-0.026 2012 ROHM Co., Ltd. ll rights rsrvd. 7/8 2012.02 - Rv.C
DT123 sris Data Sht Dimnsions (Unit : mm) SMT3 D Q c L1 Lp b x S 3 H 1 1 S b2 Dimnsion in mm/inchs Pattrm of trminal position aras M MX M MX 1.00 1.30-0.051 1 0.00 0.10 0 0.004 3 0.25 0.01 b 0.35 0.50 0.014 0.02 c 0.09 0.25 0.004 0.01 D 2.80 3.00 0.11 0.118 1.50 1.80 0.059 0.071 0.95 0.04 H 2.60 3.00 0.102 0.118 L1 0.30 0.60 0.012 0.024 Lp 0.40 0.70 0.016 0.028 Q 0.20 0.30 0.008 0.012 x - 0.10-0.004 y - 0.10-0.004 M MX M MX 1 2.10 0.08 b2 0.60-0.024-0.90-0.035 2012 ROHM Co., Ltd. ll rights rsrvd. 8/8 2012.02 - Rv.C
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