TOSHIBA CCD Linear Image Sensor CCD (Charge Coupled Device) TCD2564DG

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TOSHIBA CCD Linear Image Sensor CCD (Charge Coupled Device) TCD2564DG TCD2564DG The TCD2564DG is a high sensitive and low dark current 5400 elements 3 line CCD color image sensor. The sensor is designed for color scanner. The device contains a row of 5400 elements 3 line photodiodes which provide a 24 lines/mm across a A4 size paper. The device is operated by 5- pulse, and 0- power supply. Features Number of image sensing pixels: 5400 elements 3 lines Image sensing pixels size: 7 μm by 7 μm on 7 μm center Photo sensing region: High sensitive pn photodiode Weight: 4.4 g (typ.) Clock: 2-phase (5 ) Distance between photodiode array: Pixel R to pixel G, and pixel G to pixel B = 28 μm (4lines) Internal circuit: Clamp circuit Package: 22-pin CERDIP Color filter: Red, Green, Blue Pin Connections (top Maximum Ratings (Note ) Characteristics Symbol Rating Unit Clock pulse voltage φa Last stage clock pulse voltage φb OS4 OS3 OD 2 3 22 2 20 OS2 OS OD Shift pulse voltage SH 0.3~8.0 OS5 4 9 CP Reset pulse voltage RS Clamp pulse voltage CP Power supply voltage OD 0.3~3.5 Operating temperature T opr 0~60 C OS6 SS SS 5 6 7 Red Green Blue 8 7 6 RS φ 2B SS Storage temperature T stg 25~85 C φ 2A2 8 5 φ 2A Note : All voltages are with respect to SS terminals (ground). φ A2 9 4 φ A SH3 SH2 0 5400 5400 5400 3 2 SH NC

Circuit Diagram OD SS SS φ A2 φ 2A2 3 6 7 9 8 OS 2 Clamp CCD analog shift register (ODD) Shift gate 3 SH D26 D27 D28 D25 D26 D27 S S2 Photodiode (Blue) S5398 S5399 S5400 D28 D42 D43 Shift gate OS2 22 Clamp CCD analog shift register (EEN) OS4 Clamp CCD analog shift register (EEN) Shift gate 2 SH2 D26 D27 D28 D25 D26 D27 S S2 Photodiode (Green) S5398 S5399 S5400 D28 D42 D43 Shift gate 2 OS3 2 Clamp CCD analog shift register (ODD) OS5 4 Clamp CCD analog shift register (ODD) Shift gate 3 0 SH3 D26 D27 D28 D25 D26 D27 S S2 Photodiode (Red) S5398 S5399 S5400 D28 D42 D43 Shift gate 3 OS6 5 Clamp CCD analog shift register (EEN) 20 9 8 7 6 4 5 OD CP RS φ 2B SS φ A φ 2A Pin Names OS Output signal (Blue-ODD) φ A Transfer clock (phase ) OS2 Output signal 2 (Blue-EEN) φ A2 Transfer clock 2 (phase ) OS3 Output signal 3 (Green-ODD) φ 2A Transfer clock (phase 2) OS4 Output signal 4 (Green-EEN) φ 2A2 Transfer clock 2 (phase 2) OS5 Output signal 5 (Red-ODD) RS Reset gate OS6 Output signal 6 (Red-EEN) CP Clamp gate SS Ground SH Shift gate OD Power supply SH2 Shift gate 2 φ 2B Last stage transfer clock SH3 Shift gate 3 2

Optical/Electrical Characteristics (Ta = 25 C, OD = 0, φ = RS = SH = CP = 5 (pulse), f φ =.0 MHz, load resistance = 00 kω, t INT (integration time) = 0 ms, light source = light source A + CM500S (t =.0 mm)) Characteristics Symbol Min Typ. Max Unit Note Red R R 6.7 9.6 2.5 Sensitivity Green R G 6.2 8.9.6 Blue R B 2.6 3.8 5.0 /(lx s) (Note 2) Photo response non uniformity PRNU () 0 20 % (Note 3) PRNU (3) 3 2 m (Note 4) Saturation output voltage SAT.4.6 (Note 5) Saturation exposure SE 0.3 0.8 Ix s (Note 6) Dark signal voltage DRK 2 6 m (Note 7) Dark signal non uniformity DSNU 8 2 m (Note 8) DC power dissipation P D 580 870 mw Total transfer efficiency TTE 92 97 % Output impedance Z O 0.2 0.5 kω DC signal output voltage OS 3.5 5.0 6.5 (Note 9) Random noise N Dσ 0.56 m (Note 0) Note 2: Sensitivity is defined for each color of signal outputs average when the photosensitive surface is applied with the light of uniform illumination and uniform color temperature. Note 3: PRNU () is defined for each color on a single chip by the expressions below when the photosensitive surface is applied with the light of uniform illumination and uniform color temperature, and the incident light is 50% of SH (typ.). ΔX PRNU () = 00 (%) X X : Average of total signal outputs ΔX: The maximum deviation from X. Note 4: PRNU (3) is defined as maximum voltage with next pixel, where measured 5% of SE (typ.). Note 5: SAT is defined as minimum saturation output voltage of all effective pixels. Note 6: Definition of SE: SE = R SAT G Note 7: DRK is defined as average dark signal voltage of all effective pixels. Note 8: DSNU is defined by the difference between average value ( DRK ) and the maximum value of the dark voltage. OS DRK DSNU 3

Note 9: DC signal output voltage is defined as follows: OS SS OS Note 0: Random noise is defined as the standard deviation (sigma) of the output level difference between two adjacent effective pixels under no illumination (i.e. dark condition) calculated by the following procedure. ideo output ideo output Output waveform (effective pixels under dark condition) 200 ns 200 ns Δ Pixel n Pixel n + () Two adjacent pixels (pixel n and n + ) in one reading are fixed as measurement points. (2) Each of the output levels at video output periods averaged over 200 nanosecond period to get n and n +. (3) n + is subtracted from n to get Δ. Δ = (n) (n + ) (4) The standard deviation of Δ is calculated after procedure (2) and (3) are repeated 30 times (30 readings). 30 30 Δ = Δi σ = 2 ( Δ Δ) 30 i = 30 i - i= (5) Procedure (2), (3) and (4) are repeated 0 times to get 0 sigma values. σ = 0 0 j= σj (6) σ value calculated using the above procedure is observed 2 times larger than that measured relative to the ground level. So we specify the random noise as follows. N Dσ = 2 σ 4

Operating Condition (Ta = 25 C) Clock pulse voltage Last stage clock pulse voltage Shift pulse voltage Reset pulse voltage Clamp pulse voltage Characteristics Symbol Min Typ. Max Unit High level φa 4.75 5.0 5.5 Low level φ2a 0 0.25 High level φ2b 4.75 5.0 5.5 Low level 0 0.25 High level SH 4.75 5.0 5.5 Low level 0 0.25 High level RS 4.75 5.0 5.5 Low level 0 0.25 High level CP 4.75 5.0 5.5 Low level 0 0.25 Power supply voltage OD 9.5 0.0 0.5 Clock Characteristics (Ta = 25 C) Characteristics Symbol Min Typ. Max Unit Clock pulse frequency f φ 0.2.0 30 MHz Reset pulse frequency f RS.0 30 MHz Clamp pulse frequency f CP.0 30 MHz Clock capacitance (Note ) C φa 70 pf C φ2a 73 pf Last stage clock capacitance C φb 5 pf Shift gate capacitance C SH (SH, SH2) C SH ( SH3) 6 22 Reset gate capacitance C RS 6 pf Clamp gate capacitance C CP 6 pf Note : OD = 0 pf 5

Timing Chart t INT (integration time) SH,2,3 φ A φ 2A, φ 2B RS CP D42 D34 D32 D30 D28 S5399 S29 S27 S25 S23 S2 S9 S7 S5 S D26 D24 D22 D20 D52 D50 D26 D24 D2 D0 OS,3,5 D43 D35 D33 D3 D29 S5400 S30 S28 S26 S24 S22 S20 S8 S6 S2 D27 D25 D23 D2 D53 D5 D27 D25 D3 D OS2,4,6 Dummy outputs (3 pixels 2) Light shield outputs (48 pixels 2) (3 pixels 2) Dummy outputs (64 pixels 2) Signal outputs (2700 pixels 2) line readout period (2772 pixels 2) Dummy outputs (4 pixels 2) TTE test outputs (pixel 2) (3 pixels 2) Dummy outputs (8 pixels 2) 6

Timing Requirements t2 t3 t4 SH φ A t t5 φ 2A, φ 2B φ A GND.5 (min).5 (min) RS t8 (Note 2) Note 2: Hold the RS and CP pins at low during this period. t6 t7 φ 2B t8 t9 t0 t4 RS CP t5 t6 t t2 t3 t7 OS 7

Characteristics Symbol Min Typ. (Note 3) Max Unit Pulse timing of SH and φ A t 20 000 ns t5 000 200 SH pulse rise time, fall time t2, t4 0 50 ns SH pulse width t3 000 5000 ns φ, φ2 Pulse rise time, fall time t6, t7 0 50 ns RS pulse rise time, fall time t8, t0 0 20 ns RS pulse width t9 8 00 ns CP pulse rise time, fall time t, t3 0 20 ns CP pulse width t2 8 200 ns Pulse timing of φ 2B and CP t4 0 40 ns Pulse timing of RS and CP t5 0 0 ns t6 8 00 ideo data delay time (Note 4) t7 6.7 ns Pulse timing of SH and RS t8 000 ns Note 3: Measured with f RS = MHz. Note 4: Load resistance is 00 kω. 8

Typical Spectral Response Spectral Response (typ.).0 Ta = 25 C 0.9 分光感度特性 Green ( 標準値 ) Spectral Response(typ.) Red Relative 相対感度 response 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Ta=25 Relative response 0.8 0.7 0.6 0.5 0.4 Blue 0.3 0.2 0. 0 400 Blue Green 450 500 550 600 650 700 Wavelength (nm) Red 0. 0 400 450 500 550 600 650 700 Wavelength 入射波長 (nm) (nm.) 9

Cautions. Electrostatic Breakdown The dust and stain on the glass window of the package degrade optical performance of CCD sensor. Keep the glass window clean by saturating a cotton swab in alcohol and lightly wiping the surface, and allow the glass to dry, by blowing with filtered dry N2. Care should be taken to avoid mechanical or thermal shock because the glass window is easily to damage. a. Prevent the generation of static electricity due to friction by making the work with bare hands or by putting on cotton gloves and non-charging working clothes. b. Discharge the static electricity by providing earth plate or earth wire on the floor, door or stand of the work room. c. Ground the tools such as soldering iron, radio cutting pliers of or pincer. It is not necessarily required to execute all precaution items for static electricity. It is all right to mitigate the precautions by confirming that the trouble rate within the prescribed range. 2. Window Glass The dust and stain on the glass window of the package degrade optical performance of CCD sensor. Keep the glass window clean by saturating a cotton swab in alcohol and lightly wiping the surface, and allow the glass to dry, by blowing with filtered dry N2. Care should be taken to avoid mechanical or thermal shock because the glass window is easily to damage. 3. Incident Light CCD sensor is sensitive to infrared light. Note that infrared light component degrades resolution and PRNU of CCD sensor. 4. Mounting on a PCB This package is sensitive to mechanical stress. Toshiba recommends using IC inserters for mounting, instead of using lead forming equipment. 5. Soldering Soldering by the solder flow method cannot be guaranteed because this method may have deleterious effects on prevention of window glass soiling and heat resistance. Using a soldering iron, complete soldering within ten seconds for lead temperatures of up to 260 C, or within three seconds for lead temperatures of up to 350 C. 0

Package Dimensions Weight: 4.4 g (typ.) Unit: mm 9.6±0.8 (Note ) 37.8(7μm 5400) (Note 3) (Note 2) Note:Distance between the edge of the package and the first pixel(s) Note2:Distance between the top of chip and bottom of the package. Note3:Glass thickness(n=.5) Weight:4.4g(typ.)

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