IAM-9516 High Linearity GaAs FET Mixer Data Sheet Description Avago Technologies s IAM-9516 is a high linearity GaAs FET Mixer using.5 μm enhancement mode phemt technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3 [] plastic package. The IAM-9516 has built-in LO buffer amplifier which requires -3 dbm LO power to deliver an input third order intercept point of 7 dbm. LO port is 5 ohm matched and can be driven differential or single ended while IF port is ohm matched and fully differential. RF port requires external matching network for optimum input return loss and IIP3 performance. RF and LO frequency range coverage from 4 to 35 MHz and IF coverage is from DC to 3 MHz. This mixer consumes 6 ma of current from a single 5V supply. Conversion loss is typically 6 db and noise figure is typically 1.5 db. Excellent output power at 1 db compression of 9 dbm. LO to IF, LO to RF and RF to IF isolation are greater than 3 db. The IAM-9516 is ideally suited for frequency up/ down conversion for base station radio card receiver and transmitter, microwave link transceiver, MMDS, modulation and demodulation for receiver and transmitter and general purpose resistive FET mixer, which require high linearity. All devices are 1% RF and DC tested. Pin Connections and Package Marking Features DC = 5V @ 6 ma (Typ.) RF = 1.91 GHz, Pin RF = -1 dbm; LO = 1.7 GHz, Pin LO = -3 dbm; IF = 1 MHz unlesss otherwise specified Lead-free Option Available High Linearity: 7 dbm IIP3 Conversion Loss: 6 db typical Wide band operation: 4-35 MHz RF & LO input DC 3 MHz IF output Fully differential or single ended operation High P1dB: 9 dbm typical Low current consumption: 5V@ 6 ma typical Excellent uniformity in product specifications Small LPCC 3. x 3. x.75 mm package MTTF > 3 years [1] MSL-1 and lead-free Tape-and-Reel packaging option available Applications Frequency up/down converter for base station radio card, microwave link transceiver, and MMDS Modulation and demodulation for receiver and transmitter General purpose resistive FET mixer for other high linearity applications 1. Refer to reliability datasheet for detailed MTTF data.. Conform to JEDEC reference outline MO9 for DRP-N Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Application Note A4R: Electrostatic Discharge Damage and Control. Package marking provides orientation andidentification M3 = Device Code X = Month code indicates the month of manufacture
IAM-9516 Absolute Maximum Ratings [1] Parameter Units Absolute Max. Device Voltage V 1 CW RF Input Power [] dbm +3 CW LO Input Power [] dbm Channel Temperature C 15 Storage Temperature C -65 to 15 Thermal Resistance [,4] ch- c = 47.6 C/W 1. Operation of this device above any one of these parameters may cause permanent damage.. Assuming DC quiescent conditions and T A = 5 C. 3. Board (package belly) temperature T B is 5 C. Derate 1 mw/ C for T B > 85 C. 4. Channel-to-board thermal resistance measured using 15 C Liquid Crystal Measurement method. Electrical Specifications T A = 5 C, DC =5V @ 6 ma, RF =1.91 GHz, Pin RF = -1 dbm; LO =1.7 GHz, Pin LO = -3 dbm, IF = 1 MHz unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev. [1] F RF Frequency Range, RF MHz 4 35 F LO Frequency Range, LO MHz 4 35 F IF Frequency Range, IF MHz DC 3 Id Device Current ma 6 3.89 G [3] c Conversion Loss db 6 6.9.8 IIP3 [] Input Third Order Intercept Point dbm 7.43 NF [3] SSB Noise Figure db 1.5 P1dB [3] Output Power at 1 db Compression dbm 9 RL RF RF Port Return Loss db 19 RL LO LO Port Return Loss db 4 RL IF IF Port Return Loss db 1 ISOL L-R LO-RF Isolation db 34 ISOL L-I LO-IF Isolation db 56 ISOL R-L RF-IF Isolation db 33 1. Standard deviation number is based on measurement of at least 5 parts from three non-consecutive wafer lots during the initial characterization of this product and is intended to be used as an estimate for distribution of the typical specification.. IIP3 test condition: F RF1 = 1.91 GHz, F RF = 1.89 GHz with input power of -1 dbm per tone and LO power = -3 dbm at LO frequency F LO = 1.7 GHz. 3. Conversion loss, P1dB and NF data have de-embedded balun loss =.8 db @ 1 MHz. Simplified Schematic Figure 1. IAM-9516 Test Board.
Figure. Schematic Diagram of IAM-9516 Test Circuit. 4 Cpk=3.7 Stdev=.43 16 Cpk=1.5 Stdev=.89 15 1 Cpk=3.67 Stdev=.79 FREQUENCY 16 1 8 3 Std +3 Std FREQUENCY 1 8 6 3 Std +3 Std FREQUENCY 9 6 3 Std +3 Std 4 4 3 5 6 7 8 9 4 6 8 3 IIP3 ID LSL=., Nominal=6.8 LSL=., Nominal=6., USL=3. Figure 3. Normal Distribution of IIP3, ID, and Conversion Loss. -6.4-6. -6-5.8-5.6-5.4 CONVERSION LOSS LSL=-6.9, Nominal=-6. 5. Distribution data sample size is 5 samples taken from 5 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Conversion Loss data has de-embed balun loss.8 db @ 1 MHz. 3
IAM-9516 Typical Performance DC =5V @ 6 ma, RF =1.91 GHz, Pin RF = -1 dbm; LO = 1.7 GHz, Pin LO = -3 dbm, IF = 1 MHz unless otherwise specified CONVERSION LOSS (db) -5-5. -5.4-5.6-5.8-6 -6. -6.4-6.6-6.8-7 -7. -7.4-7.6 Figure 4. Conversion Loss vs LO Power Over IIP3 (dbm) 33 31 9 7 5 3 1 19 17 15 Figure 5. IIP3 vs LO Power Over Ids (ma) 3 9 8 7 6 5 4 3 Figure 6. Ids vs LO Power Over P1dB (dbm) 11 1 9 8 7 6 5 4 Figure 7. P1dB vs LO Power Over SSB NOISE FIGURE (db) 31 9 7 5 3 1 19 17 15 13 11 9 7 5 Figure 8. SSB NF vs LO Power Over ISOLATION LO-IF (db) -5-54 -56-58 -6-6 -64-66 Figure 9. LO-IF Isolation vs LO Power Over 7. Typical performance plots are based on test board shown at Figure 1 with matching circuit stated at Figure. 8. Operating temperature range of Mini-circuit RF transformer (model: TCM4-6T) is - C to 85 C. 9. Conversion loss, P1dB and NF plots have de-embedded balun loss.8 db @ 1 MHz. 4
IAM-9516 Typical Performance, continued DC = 5V @ 6 ma, RF =1.91 GHz, Pin RF = -1 dbm; LO = 1.7 GHz, Pin LO = -3 dbm, IF = 1 MHz unless otherwise specified ISOLATION LO-RF (db) - -4-6 -8-3 -3-34 -36-38 -4-4 -44-46 Figure 1. LO-RF Isolation vs LO Power Over ISOLATION RF-IF (db) -3-31 -3-33 -34-35 -36-37 -38-39 -4 Figure 11. RF-IF Isolation vs LO Power Over RF RETURN LOSS (db) - -4-6 -8-1 -1-14 -16-18 -.5 1 1.5.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) Figure 1. RF Return Loss vs Frequency. LO RETURN LOSS (db) -5-1 -15 - -5-3.5 1 1.5.5 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) Figure 13. LO Return Loss vs Frequency. IF RETURN LOSS (db) - -4-6 -8-1 -1-14 -16-18 - - -4 5 1 15 5 3 35 4 45 5 FREQUENCY (MHz) Figure 14. IF Return Loss vs Frequency. LO Harmonics (nlo) RF Harmonics (mrf) 1 3 4 5 18.5 1.9 11.6 5.8 1 19.5 51.3 6.6 4.8 55. 39.9 67.3 56.6 78.3 64.7 87. 3 51. >9 >9 >9 >9 >9 4 68.9 >9 >9 >9 >9 >9 5 >9 >9 >9 >9 >9 >9 Harmonic Intermodulation Suppression [1 ] Note: 1. Test Conditions of Harmonic Intermodulation Suppression: a) RF =1.91 GHz @-1 dbm and LO =1.7 GHz @-3 dbm. b) RF harmonics and intermodulation products are referenced to a desired signal produced by frequency IF = 1 MHz. c) LO Harmonics are referenced to the -3 dbm LO drive signal. 5
PCB Layout and Stencil Design Refer to Avago s web site www.avagotech.com/view/rf Ordering Information Part Number Devices per Container Container IAM-9516-TR1 1 7" reel IAM-9516-TR 5 13" reel IAM-9516-BLK 1 antistatic bag LPCC 3x3 Package Dimensions D D D D INDEX AREA (D/ X E/) E E k e E E Top View e Bottom View SEATING PLANE A3 Side View A1 A PACKAGE REF. A D D E E e A1 A3 k MIN..8.9 1.7.9 1.7. 1GL 3X3-.5 NOM..9 3. 1.8 3. 1.8.5 BSC... REF. MAX. 1. 3.1 1.9 3.1 1.9.5 DIMENSIONS ARE IN MILLIMETERS 6
Device Orientation REEL USER FEED DIRECTION COVER TAPE CARRIER TAPE M3X M3X M3X Tape Dimensions.3±.5 1.55±.5.±.1 [1] 4.±.1 [] 1.75±.1 5.5±.1 [1] C L 3.3±.1 1.6±.1 1.±.3 R.3 Typical 1.55±.1 8.±.1 3.3±.1 1. Measured from centerline of sprocket hole to centerline of pocket. Cumulative tolerance of 1 sprocket holes is ±. 3. Other material available 4. All dimensions in millimeter unless otherwise stated For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 5-1 Avago Technologies. All rights reserved. Obsoletes 5989-975EN AV-36EN - June 14, 1