QED223 Plastic Infrared Light Emitting Diode

Similar documents
QEE113 Plastic Infrared Light Emitting Diode

BAT54SWT1G / BAT54CWT1G Schottky Diodes

BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes

QEC112, QEC113 Plastic Infrared Light Emitting Diode

1N4934-1N4937 Fast Rectifiers

FJB102 NPN High-Voltage Power Darlington Transistor

TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor

FJV42 NPN High-Voltage Transistor

BAT54HT1G Schottky Barrier Diodes

LL4148 Small Signal Diode

FJP13007 High Voltage Fast-Switching NPN Power Transistor

TIP147T PNP Epitaxial Silicon Darlington Transistor

KSP2222A NPN General-Purpose Amplifier

FJP13009 High-Voltage Fast-Switching NPN Power Transistor

BC327 PNP Epitaxial Silicon Transistor

FJN3314R NPN Epitaxial Silicon Transistor with Bias Resistor

J105 / J106 / J107 N-Channel Switch

FJA13009 High-Voltage Switch Mode Application

TIP102 NPN Epitaxial Silicon Darlington Transistor

QRE1113, QRE1113GR Miniature Reflective Object Sensor

BAV103 High Voltage, General Purpose Diode

FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode

KSA1281 PNP Epitaxial Silicon Transistor

1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode

Part Number Top Mark Package Packing Method

KSC2383 NPN Epitaxial Silicon Transistor

BAS16 Small Signal Diode

KA431S / KA431SA / KA431SL Programmable Shunt Regulator

FJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor

MOC70P1, MOC70P2, MOC70P3 Phototransistor Optical Interrupter Switch

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor

FIN1002 LVDS 1-Bit, High-Speed Differential Receiver

KA431S / KA431SA / KA431SL Programmable Shunt Regulator

FGD V PDP Trench IGBT

2N5550 NPN Epitaxial Silicon Transistor

KSC1815 NPN Epitaxial Silicon Transistor

RURG3020CC. 30 A, 200 V, Ultrafast Dual Diode. Features. Description. Applications. Packaging. Ordering Information. Symbol. Data Sheet November 2013

2N7002W N-Channel Enhancement Mode Field Effect Transistor

2N7000BU / 2N7000TA Advanced Small-Signal MOSFET

BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor

TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor

FFD10UP20S 10 A, 200 V, Ultrafast Diode

FQD7N30 N-Channel QFET MOSFET

KSD1621 NPN Epitaxial Silicon Transistor

KSA473 PNP Epitaxial Silicon Transistor

KSC1845 NPN Epitaxial Silicon Transistor

FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor

J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier

KSC1815 NPN Epitaxial Silicon Transistor

KSD1616A NPN Epitaxial Silicon Transistor

KSP44 / KSP45 NPN Epitaxial Silicon Transistor

J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch

FGH75N60UF 600 V, 75 A Field Stop IGBT

2N6517 NPN Epitaxial Silicon Transistor

BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor

FYP2010DN Schottky Barrier Rectifier

PN2907 / MMBT2907 PNP General-Purpose Transistor

KSH122 / KSH122I NPN Silicon Darlington Transistor

MMBT3906SL PNP Epitaxial Silicon Transistor

FQD5N15 N-Channel QFET MOSFET

KSC5502D/KSC5502DT. Symbol Characteristics Rating Unit R θjc Thermal Resistance Junction to Case 2.5 C/W R θja Junction to Ambient 62.

MJD44H11 NPN Epitaxial Silicon Transistor

RHRP1540, RHRP A, 400 V V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

LM317M 3-Terminal 0.5A Positive Adjustable Regulator

BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features. Packaging. 12 A Square Wave, 20 khz Nonrepetitive Peak Surge Current... I FSM

RHRG A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

LP2951 Adjustable Micro-Power Voltage Regulator

RHRG A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013

KA431 / KA431A / KA431L Programmable Shunt Regulator

FGH30S130P 1300 V, 30 A Shorted-anode IGBT

KSP44/45 NPN Epitaxial Silicon Transistor

Features I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units

FGPF V PDP Trench IGBT

Description. 300 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +175 C

Features. TA=25 o C unless otherwise noted

FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT

FGH40N60UFD 600 V, 40 A Field Stop IGBT

FQD7P20 P-Channel QFET MOSFET

FGD V, PDP IGBT

FDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features

MMBFJ309 / MMBFJ310 N-Channel RF Amplifier

2SA1943/FJL4215 PNP Epitaxial Silicon Transistor

BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor

F G D3325G2_F FGD3325G2_F085

Features I-PAK (TO-251AA) TA=25 o C unless otherwise noted

J109 / MMBFJ108 N-Channel Switch

Description G D TO-220. Symbol Parameter FDP7N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

MC78XXE 3-Terminal 1A Positive Voltage Regulator

Description. TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode

HSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers

FFP08H60S 8 A, 600 V, Hyperfast II Diode

2N6520 PNP Epitaxial Silicon Transistor

FDMB2308PZ Dual Common Drain P-Channel PowerTrench MOSFET

FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT

FFH60UP60S, FFH60UP60S3

Description TO-220F. Symbol Parameter FDPF7N50U Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

FFD08S60S_F085. Features. FFD08S60S_F085 Stealth 2 Rectifier. 8A, 600V Stealth2 Rectifier. Absolute Maximum Ratings T C = 25 C unless otherwise noted

LM431A / LM431B / LM431C Programmable Shunt Regulator

Transcription:

QED223 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS λ = 880nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched photosensor: QSD123/QSD124 Medium wide emission angle, 30 High output power Package material and color: clear, purple tinted, plastic Package Dimensions 0.195 (4.95) Description February 2016 The QED223 is 880nm AlGaAs LEDs encapsulated in a clear purple tinted, plastic T-1 3/4 package. REFERENCE SURFACE 0.305 (7.75) 00 (20.3) MIN 40 (2) NOM 50 (1.25) 0.100 (2.54) NOM CATHODE Schematic ANODE 20 (0.51) SQ. (2X) 0.240 (6.10) 0.215 (5.45) CATHODE Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is ±10 (0.25) on all non-nominal dimensions unless otherwise specified. QED223 Rev. 2.3

Absolute Maximum Ratings ( unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Rating Units T OPR Operating Temperature -40 to +100 C T STG Storage Temperature -40 to +100 C T SOL-I Soldering Temperature (Iron) (2)(3)(4) 240 for 5 sec C T SOL-F Soldering Temperature (Flow) (2)(3) 260 for 10 sec C I F Continuous Forward Current 100 ma V R Reverse Voltage 5 V P D Power Dissipation (1) 200 mw I F(Peak) Peak Forward Current (5) 1.5 A Notes: 1. Derate power dissipation linearly 2.67mW/ C above 25 C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. Pulse conditions; tp = 100µs, T = 10ms. Electrical / Optical Characteristics () Symbol Parameter Test Conditions Min. Typ. Max. Units λ PE Peak Emission Wavelength I F = 20mA 890 nm TC λ Temperature Coefficient 0.2 nm / C 2Θ 1 /2 Emission Angle I F = 100mA 30 V F Forward Voltage I F = 100mA, tp = 20ms 1.7 V TC VF Temperature Coefficient -6 mv / C I R Reverse Current V R = 5V 10 µa I E Radiant Intensity I F = 100mA, tp = 20ms 25 mw/sr TC IE Temperature Coefficient -0.3 % / C t r Rise Time I F = 100mA 900 ns t f Fall Time 800 ns C j Junction Capacitance V R = 0V 11 pf QED223 Rev. 2.3 2

Typical Performance Curves NORMALIZED INTENSITY Ie NORMALIZED RADIANT INTENSITY 0.9 0.7 0.5 0.4 0.3 0.2 0.1 Figure 3. Normalized Radiant Intensity vs. Forward Current 10 1 Figure 1. Normalized Intensity vs. Wavelength 700 750 800 850 900 950 1,000 1,050 I F = 100mA Pulsed λ (nm) λpe PEAK EMISSION WAVELENGTH Ie NORMALIZED RADIANT INTENSITY 910 908 906 904 902 900 898 896 894 1.3 1.2 1.1 0.9 0.7 Figure 2. Peak Wavelength vs. Ambient Temperature 0 10 20 30 40 50 60 70 I F = 20mA DC 80 90 100 Figure 4. Normalized Radient Intensity vs. Ambient Temperature I F = 20mA Pulsed 0.1 10 100 1000 I F FORWARD CURRENT (ma) -15 0 15 30 45 60 75 90 105 VF FORWARD VOLTAGE (V) 5.0 4.0 3.0 2.0 Figure 5. Forward Voltage vs. Forward Current I F Pulsed VF FORWARD VOLTAGE (V) 2.1 2.0 1.9 1.8 1.7 1.6 Figure 6. Forward Voltage vs. Ambient Temperature I F = 20mA Pulsed 10 100 1000 I F FORWARD CURRENT (ma) 1.5-15 0 15 30 45 60 75 90 105 QED223 Rev. 2.3 3

Typical Performance Curves (Continued) Figure 7. Radiation Diagram 100 90 80 110 70 120 60 130 50 140 40 150 160 30 20 170 10 180 0 0.4 0.2 0.2 0.4 IC (ON) NORMALIZED COLLECTOR CURRENT Figure 8. Coupling Characteristics of QED22X and QSD22X d = 0 inch Pulse Width = 100μs Duty Cycle = 0.1% V CC = 5V R L = 100Ω 0.4 0.2 I F = 20mA I F = 100mA 0 1 2 3 4 5 6 LENS TIP SEPARATION (inches) QED223 Rev. 2.3 4

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AttitudeEngine Awinda AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid MTi MTx MVN mwsaver OptoHiT OPTOLOGIC OPTOPLANAR * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Power Supply WebDesigner PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS Xsens 仙童 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. AUTHORIZED USE Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application including life critical medical equipment where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Terms of Use Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 Fairchild Semiconductor Corporation www.fairchildsemi.com