600V GaN Power Transistor Sample Available Features Normally-Off Current-Collapse-Free Zero Recovery GaN Power Transistor (TO220 Package) ID(Continuous) : 15A RDS(on) : 65m Qg : 11nC Applications Power Supply for Data Centers / Base Transceiver Stations Automotive ( HEV / EV / PHEV ) etc.
Potential of GaN Material (vs. SiC and Si) - GaN is an excellent power device with high breakdown voltage and fast switching. - Meet increasing demand of energy saving and downsizing. Tjmax (a.u.) 1 Maximum Field Strength (a.u.) Maximum Operating Frequency (a.u.) Maximum Current (a.u.) (a.u.) On-resistance
Substrates Used for GaN Transistors On-SiC Extremely high cost (~5,000$@2inch) Good thermal conductivity (3.5W/cm-K) Semi-Insulating substrate is available On-sapphire Relatively high cost (~600$@4inch) Poor thermal conductivity (0.35W/cm-K) Low-loss waveguide is available On-Si Low cost (~20$@6inch) Good thermal conductivity (1.5W/cm-K) Conductive substrate High-power Amp @Microwave /Millimeter-wave Low-power MMIC LNA, SW, Front-end Switching Power High-speed/Low-loss
GaN Epitaxial Growth Technique on Si Substrate MOCVD epitaxial structure 6-inch epitaxy on Si Lattice constant: Si>GaN>AlN Thermal expansion coefficient: Si<GaN<AlN GaN Compressive Strain AlN GaN Super-lattice Buffer AlGaN AlN Strain Relaxation Si(111) substrate AlGaN/AlN initial layer GaN/AlN Super-lattice Mirror surface / Crack-free High mobility with good uniformity
Approaches for Normally-Off AlGaN/GaN HFET a-face FET (1) F-doped Gate (2) MIS-HFET (3) p-type Gate HFET (GIT) (4) Structure S G AlGaN D F-plasma treatment S G D AlGaN S G Insulator AlGaN D S P-AlGaN G D AlGaN GaN GaN GaN GaN Substrate Substrate Substrate Substrate Advantages (e.g. a-gan/r-sapphire) Simple process Simple structure Low leak current Controllability of Vth Low leak current Large Imax Controllability of Vth Good reliability confirmed Challenges Epitaxial Growth No polarization induced charge Increase Imax Stability of Doped Fluorine Controllability of Vth Stability of insulator/semicond uctor interface (1) M.Kuroda et al IEEE Trans Electron Device,57(2010) 368. (2)Y.Cai et al IEEE Electron Dev Lett, 26(2005) 435. (3) S.Sugiura et al Phys Stat Solidi 5(2008) 1923. T.Imada et al Proc of IPEC 23C(2010),1027 (4)Y.Uemoto et al IEEE Trans Electron Dev, 54(2007) 3393.
A New Normally-Off GaN Transistor - GIT - Schematic cross-section Gate Injection Transistor (GIT) Source Gate p-algan i-algan Drain Normally-Off Operation p-algan lifts up the potential at the channel Low on-resistance Hole injection from p-algan to AlGaN/GaN channel increases the drain current using conductivity modulation Drain Current (a.u.) 1.0 0.8 0.6 0.4 0.2 0.0 i-gan I-V characteristics m h << m e Large drain current Panasonic Normally on GIT Conventional GaN-FET Normally off -4-2 0 2 4 6 Gate Voltage (V)
GIT Operation Source Gate off Drain - - p AlGaN i AlGaN - - - - - - - No current flows i GaN Vg = 0V p-gate potential depletes the channel under the gate No drain current Source - Gate on Drain p AlGaN + i AlGaN + - - - - - - - - - - - + + + - - - - - - - - - - - Large drain current m h << m e i-gan Vg > Vf of GaN-PN junction Hole injection Electron generation Large drain current (conductivity modulation)
Reverse I-V Characteristics Ids ( (ma/mm) ) 400 300 200 100 0-100 -200-300 On-state I-V Characteristics Reverse Conduction Mode step=+1v Vgs=0V FET mode Vgs=5V Vgs=5V 4V 3V 2V 1V, 0V -400-10 -8-6 -4-2 0 2 4 6 8 10 Vds (V) No voltage-offset at the Vgs of 5V (FET mode) GIT can be operated as if a diode at the Vgs of 0V (Reverse-conduction mode)
Current-Collapse-Free No destruction and degradation was not observed up to 600V. 10 Measured under the condition of practical use On-resistance (a.u.) 8 6 4 2 0 300 400 500 600 700 Drain-Source Voltage (V)
Power Supply Innovation -Low on-resistance realizes high efficiency power supplies. -High frequency operation realizes compact power supplies. Efficiency Size 100% Current AC-DC ( Si ) 100% 50% Half Loss Low On-Resistance High Efficiency AC-DC ( GaN ) 50% Half Size High Frequency Operation Compact AC-DC ( GaN )
Conclusion GaN Predominance - Normally-Off - Current-Collapse-Free - Zero Recovery Applications - Power Supply for Data Centers and Base Transceiver Stations - Automotive (HEV / EV / PHEV) etc.
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