ANTENNA DEVELOPMENT FOR MULTIFUNCTIONAL ARMOR APPLICATIONS USING EMBEDDED SPIN-TORQUE NANO-OSCILLATOR (STNO) AS A MICROWAVE DETECTOR

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ANTENNA DEVELOPMENT FOR MULTIFUNCTIONAL ARMOR APPLICATIONS USING EMBEDDED SPIN-TORQUE NANO-OSCILLATOR (STNO) AS A MICROWAVE DETECTOR

Report Documentation Page Form Approved OMB No. 0704-0188 Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. 1. REPORT DATE 01 AUG 2011 2. REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE Antenna Development for Multifunctional Armor Applications Using Embedded Spin-Torque Nano-Oscillator (STNO) as a Microwave Detector 6. AUTHOR(S) Elena Bankowski 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) US Army RDECOM-TARDEC 6501 E 11 Mile Rd Warren, MI 48397-5000, USA 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) US Army RDECOM-TARDEC 6501 E 11 Mile Rd Warren, MI 48397-5000, USA 8. PERFORMING ORGANIZATION REPORT NUMBER 22092 10. SPONSOR/MONITOR S ACRONYM(S) TACOM/TARDEC/RDECOM 11. SPONSOR/MONITOR S REPORT NUMBER(S) 22092 12. DISTRIBUTION/AVAILABILITY STATEMENT Approved for public release, distribution unlimited 13. SUPPLEMENTARY NOTES Presented at the 2011 NDIA Vehicles Systems Engineering and Technology Symposium 9-11 August 2011, Dearborn, Michigan, USA, The original document contains color images. 14. ABSTRACT 15. SUBJECT TERMS 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR a. REPORT unclassified b. ABSTRACT unclassified c. THIS PAGE unclassified 18. NUMBER OF PAGES 23 19a. NAME OF RESPONSIBLE PERSON Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std Z39-18

SPIN-TORQUE DIODE EFFECT AC current excites magnetization precession in the free layer (spin torque) AC variations of the electrical resistance of the structure (GMR/TMR/MTJ) rectified dc voltage: V dc R( t) Iac ( t) 2

Standard in-plane spin-torque diode pinned 0 Spin torque excites small-angle l magnetization precession about equilibrium direction Resonance diode frequency FMR frequency FMR H 0 Frequency range of detection FMR linewidth V dc 2 2 2 Iac sin ( 0) ( FMR ) 2 Output voltage square of the input current I ac (quadratic detector) Efficiency strongly depends on the angle between magnetizations of the free and pinned layers Diode sensitivity: output input voltage power ~ 1000 mv mw C. Wang et al., JAP 106, 053905 (2009) 3

Out-of-plane spin-torque diode pinned Spin torque can excite large-angle out-of-plane magnetization precession H 0 4

Theoretical model z θ M H 0 Free layer circular pillar (no in-plane anisotropy) radius 50 nm, thickness 1 nm Resistance: R 0 = R = 1 k Bias magnetic field perpendicular to the φ plane, smaller than the saturation field, free magnetic layer H 0 < 4M s Angular dependence of the resistance: R R R ) R cos 2 ( 0 Magnetization of the pinned layer in plane (along x axis) No dc bias current cos cos ( t ) cos ( t ) 5

Block- Diagram of the Spintronic MTJ Sensor Output ESD protection AC shunt prevention Antenna MTJ Spintronic microwave sensor circuit design includes: Coplanar Waveguide (CPW) antenna Magnetic Tunnel Junction (MTJ) detector ESD protection circuit 6

Design of the sensor antenna In-plane angle Out-of-plane plane angle Normalized microwave powe r, a.u. 1.754 1.752 5 GHz 1.750 1.748 4 GHz 1.746 1.744 1742 1.742 3GH GHz 1.740 1.738 2 GHz 1.736-180 -120-60 0 60 120 180, Degree Normalize d microwave pow wer, a. u. 1.8 5 GHz 1.6 1.4 2 GHz 1.2 1.0 0.8 06 0.6 0.4 0.2 z θ φ y x 0.0-90 -60-30 0 30 60 90 Degree Coplanar waveguide (CPW) Projections of the CPW antenna directional diagram antenna 7

Design of the MTJ sensor (2) (4) (5) (6) (1) (3) (7) (1) Coplanar waveguide antenna, (2) MTJ detector, (3) ESD protection circuit, (4) brass screw holder, (5) brass set-screw, (6) magnet, (7) SMA connector. 8

Fabricated Spintronic MTJ Sensor Antenna Magnet SMA connector DC voltage out MTJ ESD protection circuit 9

MTJ Detector with CPW Antenna ----------GVSET 10

Spintronic Detector Characterization 1 6 GHz initial scan done to determine approximate resonance frequency A group detectors with in-plane magnetization: focused scans at 4-6 GHz B group (out-of-plane detectors): focused scans at 1-3 GHz 10 Detectors were tuned for maximum sensitivity using the adjustable magnet (set screw from 0 to 3 turns at 1/2 turn increments) Multiple peaks were present in some detector plots. B group out-of-plane detectors typically had a higher output voltage (5B was the best detector with approximately 6.5 mv output voltage). The absolute value of the extrema represented the voltage magnitude Tuning the magnet on the B group changed both the sensitivity and the resonance frequency. For the A group, it only changed the sensitivity. 11

Spintronic Detector Test Setup ----------GVSET 12

Detector Characterization: 4A 0.4 0.35 0.3 0.25 ltage [mv] Vol 0.2 0.15 0.1 0.05 0 Turns 0.5 Turns 1 Turns 1.5 Turns 2 Turns 2.5 Turns 3 Turns 0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6 0.05 0.1 Frequency [GHz] 13

Spintronic Detector Characterization: 5B 7 6 5 4 Vo oltage [mv] 3 2 1 0 175 1.75 195 1.95 215 2.15 235 2.35 255 2.55 275 2.75 295 2.95 315 3.15 335 3.35 355 3.55 375 3.75 1 0 Turns 0.5 Turns 1 Turns 1.5 Turns 2 turns 2.5 Turns 3 Turns 2 3 Frequency [GHz] 14

Spintronic Detector Test Inside the Anechoic Chamber ----------GVSET 15

Detector Distance Testing Inside the Anechoic Chamber 0.5 0.45 0.4 0.35 0.3 Vo oltage [mv] 0.25 02 0.2-0 in 6 in 12 in 24 inches 0.15 0.1 0.05 0 0.05 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 Frequency [GHz] 16

Detector Characterization inside the Anechoic Chamber: Obstacle Comparison - SiC 17

Detector Characterization inside the Anechoic Chamber: Obstacle Comparison - Alumina 18

Detector Characterization: Obstacle Comparison Vo oltage [mv] - - 4B (0 in) 4B (Alumina) 4B (SiC) Frequency [GHz] 19

SUMMARY We proposed a novel regime of operation of a spin-torque diode, based on excitation of large-angle angle out-of-plane of magnetization precession. The specific features of the proposed spin-torque diode are: Higher output voltage (>1 mv). The out-of-plane precession regime might be responsible for extremely high h diode efficiencies observed in recent experiments. CPW antenna was used as a feed line to the detector. The transmitting antenna was a commercial horn antenna. Ten spintronic detectors of microwave radiation were built and tested at TARDEC. We are in the process of integrating of these radar detectors into armor. There will be more tests performed at TARDEC when integration is completed. Arrays of spintronic radiation-hard detectors have two important applications: analysis of frequencies of incoming signals and RF energy harvesting. 20

Microwave energy harvesting Energy harvesting device Microwave radiation (enemy radars, communication systems, etc.) Spin torque ac/dc converter nanomagnet TMR barrier nanomagnet I ac (t) V dc Antenna Spin torque converters ac current dc voltage Operation principle ac current I ac (t) magnetization precession (spin torque effect) microwave resistance (TMR effect) dc voltage dc voltage Vdc (spin diode p effect) ) Estimated efficiency (per converter): P out, dc TMR 2 P I 2 in, ac 2 crr0 TMR ~ 0.3 tunneling magnetoresistance I cr ~ 1 ma critical spin torque current R 0 ~ 1 k electrical resistance 0 P in,ac = 0.1 mw P out,dc = 1 W 21

Research Collaborators and Acknowledgements TARDEC Research Team: Dr. Thomas Meitzler (Team Leader, Research Engineer), Dr. Elena Bankowski (Research Engineer) & Mr. Steven Zielinski (Engineer). Oakland University Research Team: Dr. Andrei Slavin (Chair, Physics Department), Dr. Vasil Tiberkevich (Research Associate Professor). We would like to thank Dr. Ilya Krivorotov (Assistant Professor), University of California at Irvine, and his research group for manufacturing prototype spintronic MTJ diodes for our experiments. We would like to thank TARDEC Director Dr. Grace Bochenek, the Chief Scientist Dr. Dave Gorsich and GVSS Associate Director Mr. Steve Knott for their support of this innovative research project. 22

Backup Slide: Expressions defining the antenna directional diagram P 1 2, E, E, 240 2 Dependence on the in-plane angle z P P, P 0 180 180, const θ Dependence on the out-of-plane of angle φ y P P, P 0 90 90, const x 2 1 * * P 0 Re d d E H E H sin 8 0 0 23