MOSFET 600VCoolMOS P7PowerTransistor TheCoolMOS 7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowermosfets,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS P7seriesisthesuccessortotheCoolMOS P6series.It combinesthebenefitsofafastswitchingsjmosfetwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentesdcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler. 1 2 34 PGTO24743 Features Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness Significantreductionofswitchingandconductionlosses ExcellentESDrobustness>2kV(HBM)forallproducts BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowrds(on)*a(below1ohm*mm²) Benefits Easeofuseandfastdesigninthroughlowringingtendencyandusage acrosspfcandpwmstages Simplifiedthermalmanagementduetolowswitchingandconduction losses Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kvesd protection Suitableforawidevarietyofapplicationsandpowerranges Gate Pin 4 Driver Source Pin 3 Drain Pin 1 Power Source Pin 2 Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe relevanttestsofjedec47/20/22 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 37 mω Qg,typ 121 nc ID,pulse 280 A Eoss @ 400V 12.4 µj Body diode dif/dt 900 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 24743 60R037P7 see Appendix A 1 Rev.2.0,20171124
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Test Circuits........................................................................... 11 Package Outlines....................................................................... 12 Appendix A............................................................................ 13 Revision History........................................................................ 14 Trademarks........................................................................... 14 Disclaimer............................................................................ 14 2 Rev.2.0,20171124
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 76 48 A TC=25 C TC=100 C Pulsed drain current 2) ID,pulse 280 A TC=25 C Avalanche energy, single pulse EAS 295 mj ID=11.0A; VDD=50V; see table 10 Avalanche energy, repetitive EAR 1.48 mj ID=11.0A; VDD=50V; see table 10 Avalanche current, single pulse IAS 11.0 A MOSFET dv/dt ruggedness dv/dt 80 V/ns VDS=0...400V Gate source voltage (static) VGS 20 20 V static; Gate source voltage (dynamic) VGS 30 30 V AC (f>1 Hz) Power dissipation Ptot 255 W TC=25 C Storage temperature Tstg 55 150 C Operating junction temperature Tj 55 150 C Mounting torque 60 Ncm M3 and M3.5 screws Continuous diode forward current IS 76 A TC=25 C Diode pulse current 2) IS,pulse 280 A TC=25 C Reverse diode dv/dt 3) dv/dt 50 V/ns VDS=0...400V,ISD<=62A,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 900 A/µs VDS=0...400V,ISD<=62A,Tj=25 C see table 8 Insulation withstand voltage VISO n.a. V Vrms,TC=25 C,t=1min 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 3 Rev.2.0,20171124
2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 0.49 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W Tsold 260 C 1.6mm (0.063 in.) from case for 10s 4 Rev.2.0,20171124
3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=1.48mA Zero gate voltage drain current IDSS 10 1 µa VDS=600V,VGS=0V,Tj=25 C VDS=600V,VGS=0V,Tj=150 C Gatesource leakage current IGSS 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) 0.030 0.070 0.037 Ω VGS=10V,ID=29.5A,Tj=25 C VGS=10V,ID=29.5A,Tj=150 C Gate resistance RG 0.86 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 5243 pf VGS=0V,VDS=400V,f=250kHz Output capacitance Coss 85 pf VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) 155 pf VGS=0V,VDS=0...400V Effective output capacitance, time related 2) Co(tr) 1599 pf ID=constant,VGS=0V,VDS=0...400V Turnon delay time td(on) 20 ns Rise time tr 10 ns Turnoff delay time td(off) 90 ns Fall time tf 4 ns VDD=400V,VGS=13V,ID=29.5A, RG=3.3Ω;seetable9 VDD=400V,VGS=13V,ID=29.5A, RG=3.3Ω;seetable9 VDD=400V,VGS=13V,ID=29.5A, RG=3.3Ω;seetable9 VDD=400V,VGS=13V,ID=29.5A, RG=3.3Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 27 nc VDD=400V,ID=29.5A,VGS=0to10V Gate to drain charge Qgd 37 nc VDD=400V,ID=29.5A,VGS=0to10V Gate charge total Qg 121 nc VDD=400V,ID=29.5A,VGS=0to10V Gate plateau voltage Vplateau 5.2 V VDD=400V,ID=29.5A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 5 Rev.2.0,20171124
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=29.5A,Tj=25 C Reverse recovery time trr 300 ns Reverse recovery charge Qrr 4.3 µc Peak reverse recovery current Irrm 28.4 A VR=400V,IF=8A,diF/dt=100A/µs; see table 8 VR=400V,IF=8A,diF/dt=100A/µs; see table 8 VR=400V,IF=8A,diF/dt=100A/µs; see table 8 6 Rev.2.0,20171124
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 300 Diagram2:Safeoperatingarea 10 3 250 10 2 1 µs 200 10 1 100 µs 10 µs Ptot[W] 150 ID[A] 10 0 1 ms 10 ms 100 10 1 DC 50 10 2 0 0 25 50 75 100 125 150 TC[ C] Ptot=f(TC) 10 3 10 0 10 1 10 2 10 3 VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 3 Diagram4:Max.transientthermalimpedance 10 0 10 2 1 µs 0.5 10 1 100 µs 10 µs 10 1 0.2 0.1 ID[A] 10 0 1 ms 10 ms ZthJC[K/W] 0.05 0.02 0.01 10 1 DC 10 2 single pulse 10 2 10 3 10 0 10 1 10 2 10 3 VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp 10 3 10 5 10 4 10 3 10 2 10 1 10 0 tp[s] ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,20171124
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 350 20 V 250 10 V 300 250 8 V 7 V 200 7 V 8 V 20 V 10 V 200 150 6 V ID[A] 150 6 V ID[A] 100 5.5 V 100 5.5 V 50 5 V 4.5 V 0 0 5 10 15 20 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 V 50 4.5 V 0 0 5 10 15 20 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 0.140 Diagram8:Drainsourceonstateresistance 3.000 0.120 5.5 V 6 V 2.500 RDS(on)[Ω] 0.100 0.080 6.5 V 7 V 10 V 20 V RDS(on)[normalized] 2.000 1.500 1.000 0.060 0.500 0.040 0 20 40 60 80 100 120 140 160 180 200 220 240 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS 0.000 50 25 0 25 50 75 100 125 150 Tj[ C] RDS(on)=f(Tj);ID=29.5A;VGS=10V 8 Rev.2.0,20171124
Diagram9:Typ.transfercharacteristics 350 Diagram10:Typ.gatecharge 12 25 C 300 10 250 8 120 V 400 V ID[A] 200 150 150 C VGS[V] 6 100 4 50 2 0 0 2 4 6 8 10 12 VGS[V] ID=f(VGS);VDS=20V;parameter:Tj 0 0 25 50 75 100 125 150 Qgate[nC] VGS=f(Qgate);ID=29.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 10 3 Diagram12:Avalancheenergy 300 250 10 2 200 IF[A] 10 1 125 C 25 C EAS[mJ] 150 100 10 0 50 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD[V] IF=f(VSD);parameter:Tj 0 25 50 75 100 125 150 Tj[ C] EAS=f(Tj);ID=11.0A;VDD=50V 9 Rev.2.0,20171124
Diagram13:Drainsourcebreakdownvoltage 690 Diagram14:Typ.capacitances 10 5 680 670 660 10 4 Ciss 650 640 VBR(DSS)[V] 630 620 610 600 C[pF] 10 3 10 2 Coss 590 580 570 10 1 Crss 560 550 540 50 25 0 25 50 75 100 125 150 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 10 0 0 100 200 300 400 500 VDS[V] C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 18 16 14 12 Eoss[µJ] 10 8 6 4 2 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) 10 Rev.2.0,20171124
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform V DS 90% V DS V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 11 Rev.2.0,20171124
6PackageOutlines PGTO24743 DIMENSIONS MILLIMETERS MIN. MAX. A 4.90 5.10 A1 2.31 2.51 A2 1.90 2.10 A3 0.05 0.25 b b1 1.10 0.65 1.30 0.79 b2 b3 1.34 0.20 1.44 c 0.58 0.66 D 20.90 21.10 D1 16.25 16.85 D2 1.05 1.35 D3 24.97 25.27 D4 4.90 5.10 E 15.70 15.90 E1 13.10 13.50 E2 2.40 2.60 e1 5.08 e2 2.79 e3 2.54 L 19.80 20.10 L1 4.30 øp 3.50 3.70 øp1 7.00 7.40 øp2 Q 2.40 5.60 2.60 6.00 S 6.15 T 9.80 10.20 U 6.00 6.40 DOCUMENT NO. Z8B00184785 REVISION 03 SCALE 2:1 0 5 10mm EUROPEAN PROJECTION ISSUE DATE 21.08.2017 Figure 1 Outline PGTO 24743, dimensions in mm Industrial Grade 12 Rev.2.0,20171124
600V CoolMOS P7 Power Transistor 7 Appendix A Table 11 Related Links IFX CoolMOS P7 Webpage: www.infineon.com IFX CoolMOS P7 application note: www.infineon.com IFX CoolMOS P7 simulation model: www.infineon.com IFX Design tools: www.infineon.com 13 Rev. 2.0, 20171124
600V CoolMOS P7 Power Transistor Revision History Revision: 20171124, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 20171124 Release of final version Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CoolGaN, CoolMOS, CoolSET, CoolSiC, CORECONTROL, CROSSAVE, DAVE, DIPOL, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, Infineon, ISOFACE, IsoPACK, iwafer, MIPAQ, ModSTACK, myd, NovalithIC, OmniTune, OPTIGA, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL3, ReverSave, SatRIC, SIEGET, SIPMOS, SmartLEWIS, SOLID FLASH, SPOC, TEMPFET, thinq!, TRENCHSTOP, TriCore. Trademarks updated August 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany 2017 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.0, 20171124