TLP26 TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP26 Programmable Controllers AC / DC Input Module Telecommunication Unit in mm The TOSHIBA mini flat coupler TLP26 is a small outline coupler, suitable for surface mount assembly. TLP26 consists of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode connected inverse parallel, and provides high CTR at low AC input current. Collector emitter voltage: 8 V (min.) Current transfer ratio: % (min.) Isolation voltage: 7Vrms (min.) UL recognized: UL77, file No. E6749 TOSHIBA 4C Weight:.9 g Pin Configurations (top view) 6 4 : Anode, Cathode : Cathode, Anode 4 : Emitter 6 : Collector
TLP26 Maximum Ratings () LED Detector Characteristic Symbol Rating Unit Forward current I F(RMS) ma Forward current derating (Ta C) I F / C.7 ma / C Peak forward current(µs pulse,pps) I FP A Junction temperature T j 2 C Collector emitter voltage V CEO 8 V Emitter collector voltage V ECO 7 V Collector current I C ma Peak collector current(ms pulse,pps) I CP ma Power dissipation P C mw Power dissipation derating (Ta 2 C) P C / C. mw / C Junction temperature T j 2 C Storage temperature range T stg ~2 C Operating temperature range T opr ~ C Lead soldering temperature( sec.) T sold 26 C Total package power dissipation P T 2 mw Total package power dissipation derating (Ta 2 C) P T / C 2. mw / C Isolation voltage (AC, min., RH 6%) (Note ) BV S 7 Vrms (Note ) Device considered a two terminal device: Pins, and shorted together and 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V CC 48 V Forward current I F(RMS).6 2 ma Collector current I C ma Operating temperature T opr 2 7 C 2
TLP26 Individual Electrical Characteristics () LED Detector Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = ± ma... V Capacitance C T V =, f = MHz 6 pf Collector emitter breakdown voltage Emitter collector breakdown voltage Collector dark current V (BR) CEO I C =. ma 8 V V (BR) ECO I E =. ma 7 V I CEO V CE = 48 V na V CE = 48 V, Ta = 8 C 2 µa Capacitance collector to emitter C CE V =, f = MHz 2 pf Coupled Electrical Characteristics () Characteristic Symbol Test Condition MIn. Typ. Max. Unit Current transfer ratio I C / I F I F = ± ma, V CE =. V 2 % Low input CTR I C / I F (low) IF = ±. ma, V CE =. V % Collector emitter saturation voltage V CE (sat) I C =. ma, I F = ± ma.4 I C = ma, I F = ± ma.2 V Off state collector current I C(off) V F = ±.7V, V CE = 48 V µa CTR symmetry I C (ratio) I C (I F = ma) / I C (I F = ma). Coupled Electrical Characteristics (Ta = 2~7 C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit Current transfer ratio I C / I F I F = ma, V CE =. V % Low input CTR I C / I F (low) IF =. ma, V CE =. V %
TLP26 Isolation characteristics () Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output C S V S =, f = MHz.8 pf Isolation resistance R S V S = V 4 Ω Isolation voltage BV S AC, minute 7 Vrms AC, second, in oil DC, minute, in oil Vdc Switching Characteristics () Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time t r 8 Fall time t f V CC = V, I C = 2 ma 8 Turn on time t on R L = Ω Turn off time t off 8 Turn on time t ON Storage time t S R L = 4.7 kω (Fig.) V CC = V, I F = ±.6 ma Turn off time t OFF µs µs Fig. Switching time test circuit I F R L V CC V CE I F V CE t s V CC 4.V.V t ON t OFF 4
TLP26 I F Ta P C Ta 2 Allowable forward current IF (ma) 8 6 4 2 Allowable collector power dissipation PC (mw) 6 2 8 4 2 2 4 6 8 2 2 2 4 6 8 2 Ambient temperature Ta ( C) Ambient temperature Ta ( C) I FP D R I F V F Pulse forward current IFP (ma) Pulse width s 2 Forward current IF (ma).. Duty cycle ratio D R..6.8..2.4.6.8 Forward voltage V F (V),V F /,Ta I F I FP V FP Forward voltage temperature coefficient,vf /,Ta (mv / C).2 2.8 2.4 2..6.2.8.4... PULSE FORWARD CURRENT IFP (ma).6 Pulse width s Repetitive Frequency = Hz..4.8 2.2 2.6. Forward current I F (ma) Pulse forward voltage V FP (V)
TLP26 I C V CE I C V CE 4 IF =.ma 4 Collector current IC (ma) 2.8mA.6mA.mA.4mA Collector current IC (ma) 2 IF =.ma.8ma.6ma.ma.4ma.2ma 2 4 6 8.2mA.2.4.6.8. Collector emitter voltage V CE (V) Collector emitter voltage V CE (V) I C I F I CEO Ta Collector current IC (ma)...... Sample A. Sample B. VCE = V VCE =.V VCE =.V Forward current I F (ma) Collector dark current ICEO ( A) 2 VCE = 48V V 24V V I C / I F I F 4 2 4 6 8 2 Ambient temperature Ta ( C) Current transfer ratio IC / IF (%) #! # Sample A Sample B VCE = V VCE =.V VCE =.V!... Forward current I F (ma) 6
TLP26 V CE(sat) Ta I C Ta Collector emitter saturation voltage VCE(sat) (V).4.2..8.6.4.2 IF = ma Ic =.ma Collector current IC (ma).. IF = 2mA ma.ma.2ma VCE =.V VCE =.V 4 2 2 4 6 8. Ambient temperature Ta ( ). -2 2 4 6 8 Ambient temperature Ta ( ) IF =.6mA VCC = V Switching Time RL toff Switching time ( s) ts ton Load resistance R L (k9) 7
TLP26 RESTRICTIONS ON PRODUCT USE 77EBC TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 8