AON74 3V PChannel MOFET General escription The AON74 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as a load switch or in PWM applications. Product ummary V 3V I (at V G =V) 35A R (ON) (at V G =V) < 4mW R (ON) (at V G =V) < 7mW % UI Tested % R g Tested Top View FN 3x3_EP Bottom View Top View Pin G 3 4 7 5 G Absolute Maximum Ratings unless otherwise noted Parameter ymbol rainource Voltage V V G I M Maximum 3 Gateource Voltage ±5 V Continuous rain Current T C =5 C 35 I T C = C 3 Pulsed rain Current C Continuous rain Current Power issipation B Power issipation A I M T A =7 C 9.7 T C =5 C 9 P T C = C 3. P M T A =7 C Junction and torage Temperature Range T J, T TG 55 to 5 C Units V A A W W Thermal Characteristics Parameter ymbol Typ Maximum JunctiontoAmbient A t s 3 R qja Maximum JunctiontoAmbient A teadytate Maximum JunctiontoLead teadytate 3.5 R qjl Max 4 75 4. Units Rev 4: Mar. www.aosmd.com Page of 5
AON74 Electrical Characteristics (T J =5 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I =5mA, V G =V 3 V I V =3V, V G =V T J =55 C 5 I G GateBody leakage current V =V, V G = ±5V ± na V G(th) Gate Threshold Voltage V =V G I =5mA.7. 3 V I (ON) On state drain current V G =V, V =5V A R (ON) Zero Gate Voltage rain Current tatic rainource OnResistance V G =V, I =9A V G =V, I =7A 4 T J =5 C 9.9 7 mw g F Forward Transconductance V =5V, I =9A 7 V iode Forward Voltage I =A,V G =V.7 V I Maximum Bodyiode Continuous Current 5 A YNAMIC PARAMETER C iss Input Capacitance pf C oss Output Capacitance V G =V, V =5V, f=mhz 37 pf C rss Reverse Transfer Capacitance 95 pf R g Gate resistance V G =V, V =V, f=mhz.4 3. W WITCHING PARAMETER Q g (V) Total Gate Charge 3 39 nc Q gs Gate ource Charge V G =V, V =5V, I =9A 4. nc Q gd Gate rain Charge nc t (on) TurnOn elaytime ns t r TurnOn Rise Time V G =V, V =5V, R L =.W, 9.4 ns t (off) TurnOff elaytime R GEN =3W 4 ns t f TurnOff Fall Time ns t rr Body iode Reverse Recovery Time I F =9A, di/dt=5a/ms 4 ns Q rr Body iode Reverse Recovery Charge I F =9A, di/dt=5a/ms 35 nc A. The value of R qja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with. The Power dissipation P M is based on R qja t s value and the maximum allowed junction temperature of 5 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 5 C may be used if the PCB allows it. B. The power dissipation P is based on T J(MAX)= 5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)= 5 C. Ratings are based on low frequency and duty cycles to keep initial T J =5 C.. The R qja is the sum of the thermal impedence from junction to case R qjc and case to ambient. E. The static characteristics in Figures to are obtained using <3ms pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)= 5 C. The OA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with. ma mw THI PROUCT HA BEEN EIGNE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIGHT TO IMPROVE PROUCT EIGN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev 4: Mar. www.aosmd.com Page of 5
R (ON) (mw) I (A) R (ON) (mw) Normalized OnResistance I (A) I (A) AON74 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC V V 5V V =5V 4.5V 4 4 4V 5 C 5 C V G =3.5V 3 4 5 V (Volts) Fig : OnRegion Characteristics (Note E) 3 4 5 V G (Volts) Figure : Transfer Characteristics (Note E). 4 V G =V. V G =V I =9A.4 V G =V. V G =V I =7A 5 5 I (A) Figure 3: OnResistance vs. rain Current and Gate Voltage (Note E). 5 5 75 5 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature (Note E) 3 I =9A.E 5.E 5 5 C 5.E.E 5 5 5 4 V G (Volts) Figure 5: OnResistance vs. Gateource Voltage (Note E).E3...4.... V (Volts) Figure : Bodyiode Characteristics (Note E) Rev 4: Mar. www.aosmd.com Page 3 of 5
Z qja Normalized Transient Thermal Resistance I (Amps) Power (W) V G (Volts) Capacitance (pf) AON74 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC V =5V I =9A 3 4 C iss 4 4 C oss 5 5 5 3 Q g (nc) Figure 7: GateCharge Characteristics C rss 5 5 5 3 V (Volts) Figure : Capacitance Characteristics. T A =5.. R (ON) ms ms ms.. T J(Max) =5 C... V (Volts) C Figure 9: Maximum Forward Biased afe Operating Area (Note F) ms ms s... Pulse Width (s) Figure : ingle Pulse Power Rating Junctionto Ambient (Note F) =T on /T T J,PK =T A P M.Z qja.r qja In descending order =.5,.3,.,.5,.,., single pulse R qja =75.. ingle Pulse T...... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P T on Rev 4: Mar. www.aosmd.com Page 4 of 5
AON74 Gate Charge Test Circuit & Waveform Qg V UT Qgs Qgd Ig Charge RL Resistive witching Test Circuit & Waveforms ton toff td(on) tr td(off) tf Rg UT 9% % Id L Unclamped Inductive witching (UI) Test Circuit & Waveforms E = / LI AR AR Rg Id BV UT I AR iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev 4: Mar. www.aosmd.com Page 5 of 5