Bias Resistor Transistors

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Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTC4EETG Series S-LDTC4EETG Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-89 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q Qualified and PPAP Capable. PIN BASE (INPUT) R R2 SC-89 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 0 madc THERMAL CHARACTERISTICS Rating Symbol Value Unit Total Device Dissipation, FR4 Board (Note ) @ T A = 25 C Derate above 25 C P D 200.6 mw mw/ C Thermal Resistance, JunctiontoAmbient (Note ) R JA 600 C/W Total Device Dissipation, FR4 Board (Note 2) @ T A = 25 C Derate above 25 C P D 300 2.4 mw mw/ C Thermal Resistance, JunctiontoAmbient (Note 2) R JA 400 C/W Junction and Storage Temperature Range T J, T stg 55 to +50 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR4 @ Minimum Pad 2. FR4 @.0.0 Inch Pad Rev.B /9

LDTC4EETG Series,S-LDTC4EETG Series ORDERING INFORMATION AND RESISTOR VALUES Device Marking R (K) R2 (K) Package Shipping 8A LDTC4EETG SC89 3000 Tape & Reel 8B 22 22 LDTC24EETG SC89 3000 Tape & Reel 8C 47 47 LDTC44EETG SC89 3000 Tape & Reel 8D 47 LDTC4YETG SC89 3000 Tape & Reel 94 LDTC4TETG SC89 3000 Tape & Reel 8F 4.7 LDTC43TETG SC89 3000 Tape & Reel 8H 2.2 2.2 LDTC23EETG SC89 3000 Tape & Reel LDTC43EETG 8J 4.7 4.7 SC89 3000 Tape & Reel 8K 4.7 47 LDTC43ZETG SC89 3000 Tape & Reel LDTC24XETG 8L 22 47 SC89 3000 Tape & Reel LDTC23JETG 8M 2.2 47 SC89 3000 Tape & Reel 8N 0 0 LDTC5EETG SC89 3000 Tape & Reel LDTC44WETG 8P 47 22 SC89 3000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Cutoff Current (V CB = 50 V, I E = 0) I CBO 0 nadc CollectorEmitter Cutoff Current (V CE = 50 V, I B = 0) I CEO 500 nadc EmitterBase Cutoff Current LDTC4EETG (V EB = 6.0 V, I C = 0) LDTC24EETG LDTC44EETG LDTC4YETG LDTC4TETG LDTC43TETG LDTC23EETG LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG LDTC5EETG LDTC44WETG CollectorBase Breakdown Voltage (I C = A, I E = 0) V (BR)CBO 50 Vdc CollectorEmitter Breakdown Voltage (Note 3) (I C = 2.0 ma, I B = 0) I EBO 0.5 0. 0.9.9 2.3.5 0.8 0.3 0.05 0.3 madc V (BR)CEO 50 Vdc Rev.B 2/9

LDTC4EETG Series,S-LDTC4EETG Series Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 3) DC Current Gain LDTC4EETG (V CE = V, I C = 5.0 ma) LDTC24EETG LDTC44EETG LDTC4YETG LDTC4TETG LDTC43TETG LDTC23EETG LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG LDTC5EETG LDTC44WETG CollectorEmitter Saturation Voltage (I C = ma, I B = 0.3 ma) (I C = ma, I B = 5 ma) LDTC23EETG (I C = ma, I B = ma) LDTC43TETG/LDTC4TETG/ LDTC43EETG/LDTC43ZETG/LDTC24XETG Output Voltage (on) (V CC = 5.0 V, V B = 2.5 V, R L =.0 k ) LDTC4EETG LDTC24EETG LDTC4YETG LDTC4TETG LDTC43TETG LDTC23EETG LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG (V CC = 5.0 V, V B = 3.5 V, R L =.0 k ) LDTC44EETG (V CC = 5.0 V, V B = 5.5 V, R L =.0 k ) LDTC5EETG (V CC = 5.0 V, V B = 4.0 V, R L =.0 k ) LDTC44WETG Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L =.0 k ) (V CC = 5.0 V, V B = 5 V, R L =.0 k ) LDTC43TETG LDTC43ZETG LDTC4TETG LDTC5 EETG h FE 35 60 60 60 8.0 5 60 0 40 40 350 350 5 30 200 50 40 50 40 V CE(sat) 5 Vdc V OL Vdc V OH 4.9 Vdc 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Input Resistor Resistor Ratio LDTC4EETG LDTC24EETG LDTC44EETG LDTC4YETG LDTC4TETG LDTC43TETG LDTC23EETG LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG LDTC5EETG LDTC44WETG LDTC4EETG/LDTC24EETG/ LDTC44EETG/LDTC5EETG LDTC4YETG LDTC43TETG/LDTC4TETG LDTC23EETG/LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG LDTC44WETG R 7.0 5.4 32.9 7.0 7.0 3.3.5 3.3 3.3 5.4.54 70 32.9 R /R 2 0.8 0.7 0.8 0.055 0.38 0.038.7 22 47 4.7 2.2 4.7 4.7 22 2.2 0 47.0.0 0. 0.47 0.047 2. 3 28.6 6. 3 3 6. 2.9 6. 6. 28.6 2.86 30 6..2 5.2 0.85 0.56 0.056 2.6 k Rev.B 3/9

LDTC4EETG Series,S-LDTC4EETG Series TYPICAL ELECTRICAL CHARACTERISTICS LDTC4EETG VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Ic/Ib= 0. 0.0 0 20 30 40 50 60-55 25 75 0 25 hfe, DC CURRENT GAIN (NORMALIZED) 00 Vce=V 0 0 20 40 60 0 20-55 25 75 0 25 Fig. VCE(sat) VS IC Fig. 2 DC CURRENT GAIN 4.5 0 Cob, CAPACITANCE (pf) 4 3.5 3 2.5 2.5 f = MHz IE = 0 A 0. 0.0 Vo=5V 0.5 0 0 20 30 40 50 60 VR, REVERSE BIAS VOLTAGE (V) Fig. 3 OUTPUT CAPACITANCE 0.00 0 0.5.5 2 2.5 3 3.5 Vin, INPUT VOLTAGE (V) -55-25 25 75 25 Fig. 4 OUTPUT CURRENT VS INPUT VOLTAGE Rev.B 4/9

LDTC4EETG Series,S-LDTC4EETG Series TYPICAL ELECTRICAL CHARACTERISTICS LDTC4EETG 0 Vo=V Vin, INPUT VOLTAGE (V) 0 20 30 40 50-55 -25 COLLECTOR 25 CURRENT:Ic(mA) 75 25 Fig. 5 INPUT VOLTAGE VS OUTPUT CURRENT Rev.B 5/9

LDTC4EETG Series,S-LDTC4EETG Series TYPICAL ELECTRICAL CHARACTERISTICS LDTC5EETG VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 0. 0.0 Ic/Ib= 0 20 30 40 50 60 hfe, DC CURRENT GAIN (NORMALIZED) 00 Vce=V 0 0-55 25 75 0 25-55 25 75 0 25 Fig. 6 VCE(sat) VS IC Fig. 7 DC CURRENT GAIN 4.5 0 Cob, CAPACITANCE (pf) 4 3.5 3 2.5 2.5 f = MHz IE = 0 A 0. 0.0 Vo=5V 0.5 0 0 20 30 40 50 60 0.00 0 0.5.5 2 2.5 3 3.5 VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V) Fig. 8 OUTPUT CAPACITANCE -55-25 25 75 25 Fig. 9 OUTPUT CURRENT VS INPUT VOLTAGE Rev.B 6/9

LDTC4EETG Series,S-LDTC4EETG Series TYPICAL ELECTRICAL CHARACTERISTICS LDTC5EETG 0 Vo=V Vin, INPUT VOLTAGE (V) 0 20 30 40 50-55 -25 25 75 25 Fig. INPUT VOLTAGE VS OUTPUT CURRENT Rev.B 7/9

LDTC4EETG Series,S-LDTC4EETG Series TYPICAL APPLICATIONS FOR NPN BRTs +2 V ISOLATED LOAD FROM P OR OTHER LOGIC Fig. LEVEL SHIFTER:CONNECTS 2 TO 24 VOLT CIRCUITS TO LOGIC +2 V V CC OUT IN LOAD Fig. 2 OPEN COLLECTOR INVERTER: INVERTS THE INPUT SIGNAL Fig. 3 INEXPENSIVE,UNREGULATED CURRENT SOURCE Rev.B 8/9

LDTC4EETG Series,S-LDTC4EETG Series SC-89 K B A -X- 3 2 -Y- S NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-0 OBSOLETE, NEW STANDARD 463C-02. M G 2 PL D 3 PL 0.08 (0.003) M X C Y J N MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.50.60.70 0.059 0.063 0.067 B 0.75 0.85 0.95 0.030 0.034 0.040 C 0.60 0.70 0. 0.024 0.028 0.03 D 3 8 0.33 0.009 0.0 0.03 G 0.50 BSC 0.020 BSC H 0.53 REF 0.02 REF J 0. 0.5 0 0.004 0.006 0.008 K 0.30 0.40 0.50 0.02 0.06 0.020 L. REF 0.043 REF M N S.50.60.70 0.059 0.063 0.067 -T- SEATING PLANE H H L G RECOMMENDED PATTERN OF SOLDER PADS Rev.B 9/9

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