Figure 1: JFET common-source amplifier. A v = V ds V gs

Similar documents
Electronic Devices. Floyd. Chapter 9. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd

ITT Technical Institute. ET215 Devices 1. Chapter

IFB270 Advanced Electronic Circuits

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering

(a) Current-controlled and (b) voltage-controlled amplifiers.

Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS

Electronic PRINCIPLES

ITT Technical Institute. ET215 Devices 1. Unit 7 Chapter 4, Sections

EE105 Fall 2015 Microelectronic Devices and Circuits

Chapter 8. Field Effect Transistor

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

L MOSFETS, IDENTIFICATION, CURVES. PAGE 1. I. Review of JFET (DRAW symbol for n-channel type, with grounded source)

UNIT I - TRANSISTOR BIAS STABILITY

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)

ES 330 Electronics II Homework # 2 (Fall 2016 Due Wednesday, September 7, 2016)

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB

Radio Frequency Electronics

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

INTRODUCTION TO ELECTRONICS EHB 222E

ITT Technical Institute. ET215 Devices 1. Unit 8 Chapter 4, Sections

Chapter 6: Field-Effect Transistors

Prof. Paolo Colantonio a.a

Transistor Characteristics

6. Field-Effect Transistor

Three Terminal Devices

A Practical Approach to Designing MOSFET Amplifiers for a Specific Gain

Chapter 6: Field-Effect Transistors

Name: Date: Score: / (75)

Unit III FET and its Applications. 2 Marks Questions and Answers

EE5310/EE3002: Analog Circuits. on 18th Sep. 2014

Field Effect Transistors (npn)

Experiment 5 Single-Stage MOS Amplifiers

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS

Lecture 14. Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1

ECE315 / ECE515 Lecture 9 Date:

Field-Effect Transistor

Chapter 7: FET Biasing

Lecture 18. MOSFET (cont d) MOSFET 1-1

Lab 5: FET circuits. 5.1 FET Characteristics

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE. Department of Electrical and Computer Engineering

Lecture 16. MOSFET (cont d) Sunday 3/12/2017 MOSFET 1-1

Chapter 5: Field Effect Transistors

Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1

Frequently Asked Questions

Exam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage?

Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET).

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1

Field Effect Transistors

FET(Field Effect Transistor)

Field Effect Transistor (FET) FET 1-1

Silicon Junction Field-Effect Transistors

BJT Amplifier. Superposition principle (linear amplifier)

The Field Effect Transistor

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model

L It indicates that g m is proportional to the k, W/L ratio and ( VGS Vt However, a large V GS reduces the allowable signal swing at the drain.

JFET Noise. Figure 1: JFET noise equivalent circuit. is the mean-square thermal drain noise current and i 2 fd

Silicon Junction Field-Effect Transistors

Phy 335, Unit 4 Transistors and transistor circuits (part one)

I E I C since I B is very small

Common-Source Amplifiers

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET)

Each question is worth 2 points, except for problem 3, where each question is worth 5 points.

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration)

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices

Gechstudentszone.wordpress.com

MODULE-2: Field Effect Transistors (FET)

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.

Lecture 17. Field Effect Transistor (FET) FET 1-1

Electronic Circuits II - Revision

Lecture 20. MOSFET (cont d) MOSFET 1-1

Field Effect Transistors

The Common Source JFET Amplifier

D n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN

THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs

EECE2412 Final Exam. with Solutions

Lecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III

DC Coupling: General Trends

Chapter 7: FET Biasing

Homework Assignment 06

Field Effect Transistors

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic.

CMOS Cascode Transconductance Amplifier

University of Pittsburgh

Homework Assignment 07

Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.

FIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET)

Chapter 8: Field Effect Transistors

4 Transistors. 4.1 IV Relations

MOS Capacitance and Introduction to MOSFETs

ECE:3410 Electronic Circuits

Course Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)

Physics 481 Experiment 3

(Refer Slide Time: 02:05)

Roll No. B.Tech. SEM I (CS-11, 12; ME-11, 12, 13, & 14) MID SEMESTER EXAMINATION, ELECTRONICS ENGINEERING (EEC-101)

Transcription:

Chapter 7: FET Amplifiers Switching and Circuits The Common-Source Amplifier In a common-source (CS) amplifier, the input signal is applied to the gate and the output signal is taken from the drain. The amplifier has higher input resistance and lower gain than the equivalent CE amplifier. Figure 1: JFET common-source amplifier. The ac voltage gain of this circuit is =, where =V gs and =V ds. The voltage gain expression is, therefore, From the equivalent circuit, V ds =I d R d A v = V ds V gs and from the definition of transconductance, g m =I d /V gs, Substituting the two preceding expressions into the equation for voltage gain yields Av=gm Rd You can estimate what the transfer characteristic looks like from values on the specification sheet, but keep in mind that large variations are common with JFETs. Figure 2 54 Assist. Prof. Dr. Hamad Rahman

To analyze the CS amplifier, you need to start with dc values. It is useful to estimate I D based on typical values; specific circuits will vary from this estimate. The gain is reduced when a load is connected to the amplifier because the total ac drain resistance (R d ) is reduced Example: Determine the drain current for a typical 2N5458 JFET amplifier which shown in the following Figure. V DD +12 V 2.7 kw 0.1 mf 100 mv R G 10 MW R S 470 W 10 mf Solution: From the specification sheet, the typical I DSS = 6.0 ma and V GS(off) = -4 V. These values can be plotted along with the load line to obtain a graphical solution. A graphical solution is illustrated. On the transconductance curve, plot the load line for the source resistor. Then read the current and voltage at the Q-point. I D = 2.8 ma and V GS = -1.3 V Alternatively, you can obtain I D using Equation I D = I DSS (1 I DR S V GS(off) ) 2 Example: Assume I DSS is 6.0 ma, V GS(off) is -4 V, and V GS = -1.3 V as found previously. What is the expected gain? Solution: A v = g m = (2.02 ms)(2.7 kω) = 5.45 55 Assist. Prof. Dr. Hamad Rahman

Example: How does the addition of the 10kΩ load affect the gain? Solution: Electronic Devices V DD +12 V 2.7 kw 0.1 mf A v = g m R d = (2.02 ms)(2.13 kω) = 4.29 100 mv R G 10 MW R S 470 W 10 mf 10 kw D-MOSFET Amplifier Operation In operation, the D-MOSFET has the unique property in that it can be operated with zero bias, allowing the signal to swing above and below ground. This means that it can operate in either D-mode or E-mode. +V DD R G Figure 3: (a) Zero-biased D-MOSFET common-source amplifier. (b) Depletion-enhancement operation D-MOSFET shown on transfer characteristic curve. E-MOSFET Amplifier Operation The E-MOSFET is a normally off device. The n-channel device is biased on by making the gate positive with respect to the source. A voltage-divider biased E-MOSFET amplifier is shown in Figure 4. Figure 4: (a) Common-source E-MOSFET amplifier with voltage-divider bias. (b) E-MOSFET (n-channel) operation shown on transfer characteristic curve. 56 Assist. Prof. Dr. Hamad Rahman

The Common-Drain (CD) Amplifier In a CD amplifier, the input signal is applied to the gate and the output signal is taken from the source. There is no drain resistor, because it is common to the input and output signals. Figure 5: JFET common-drain amplifier (source-follower). The voltage gain is given by the equation A v = g mr S 1 + g m R S The voltage gain is always slightly < 1. If g m R s >>1, then a good approximation is A v 1. Common-Gate Amplifier Operation A self-biased common-gate amplifier is shown in Figure 6. The gate is connected directly to ground. The input signal is applied at the source terminal through. The output is coupled through from the drain terminal. Figure 6: JFET common-gate amplifier. The Class-D Amplifier MOSFETs are useful as class-d amplifiers, which are very efficient because they operate as switching amplifiers. They use pulse- width modulation (PWM), a process in which the input signal is converted to a series of pulses. The pulse width varies proportionally to the amplitude of the input signal. 57 Assist. Prof. Dr. Hamad Rahman

The modulated signal is amplified by class-b complementary MOSFET transistors. The output is filtered by a low-pass filter to recover the original signal and remove the higher modulation frequency. PWM is also useful in control applications such as motor controllers. MOSFETs are widely used in these applications because of fast switching time and low on-state resistance. +V DD Q 1 Modulated input Low-pass filter Q 2 V DD Figure 7: Complementary MOSFETs operating as switches to amplify power. MOSFET Switching Operation MOSFETs are also used as analog switches to connect or disconnect an analog signal. Analog switches are available in IC form. The configuration shown allows signals to be passed in either direction. Advantages of MOSFETs are that they have relatively low onstate resistance and they can be used at high frequencies, such as found in video applications. A basic n-channel MOSFET analog switch is shown in Figure 8. The signal at the drain is connected to the source when the MOSFET is turned on by a positive V GS and is disconnected when V GS is 0, as indicated. Figure 9: Operation of an n-channel MOSFET analog switch. Basic class D audio amplifier 58 Assist. Prof. Dr. Hamad Rahman