: AI1805 GaAs Monolithic Microwave IC UMS develops a packaged monolithic medium power amplifier delivering 23.5dBm output power at 1dB compression point, associated with 24dB of linear gain from 17 to 21GHz for an overall power supply of 4V/ 230mA. The circuit is dedicated to a wide range of applications, commercial space, and military applications to commercial communication systems. It is developed on a robust 0.15µm gate length phemt process, and is available in a hermetic surface mount 20 leads 6x6 package compliant with the environmental regulation in particular with the directives RoHS N 2011/65 and REACh N 1907/2006. Pout_Sat Pout_1dB LGain Ref. : AI18058137-17 1/7 Subject to change without notice United Monolithic Semiconductors S.A.S.
Electrical Characteristics Tamb.= +25 C, Vd = +4.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 17.0 21.0 GHz Gain Linear Gain 24 db P -1dB Output power @ 1dB compression 23.5 dbm Psat Saturated Output Power 24.5 dbm RLin Input Return Loss 10 db RLout Output Return Loss 10 db Id Quiescent Drain current 230 ma Vg Gate voltage -0.7 V These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Absolute Maximum Ratings (1) Tamb.= +25 C Symbol Parameter Values Unit Vd Drain bias voltage 6V V Id Drain bias current 300 ma Vg Gate bias voltage -2 to +0.4 V Pin Maximum peak input power overdrive (2) +10 dbm Ta Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +150 C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Typical Bias Conditions Tamb.= +25 C Symbol Pad N o Parameter Values Unit Vd12 2 DC Drain voltage 1 st, 2 nd stage 4 V Vd34 4 DC Drain voltage 3 rd, 4 th stage 4 V Vg12 14 DC Gate voltage 1 st & 2 nd stage -0.7 V Vg34 13 DC Gate voltage 3 rd & 4 th stage -0.7 V Ref. : AI18058137-17 2/7 Subject to change without notice
AI1805 Typical Board Measurements Vd = +4.0V, Id = 230mA These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Board losses are not de-embedded and estimated to 1.3dB across the band. Linear Gain versus frequency in temperature +85 C +25 C -40 C Input return loss Output return loss +85 C +25 C -40 C +85 C +25 C -40 C Ref. : AI18058137-17 3/7 Subject to change without notice
Typical Board Measurements Tamb.= +25 C, Vd = +4.0V, Id = 230mA Output power saturation & PAE(%) versus Frequency Psat PAE at 1dB Output power at 1dB compression versus temperature +85 C +50 C +25 C -40 C Ref. : AI18058137-17 4/7 Subject to change without notice
AI1805 Typical Board Measurements Vd = +4.0V, Id = 230mA Output power versus input power & temperature at 19GHz +85 C +50 C +25 C -40 C Drain current versus input power & temperature at 19GHz +85 C +50 C +25 C -40 C Ref. : AI18058137-17 5/7 Subject to change without notice
Package outline (1) Units : mm (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0024 (http://www.ums-gaas.com) for exact package dimensions. It is strongly recommended to ground all pins marked Gnd through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : AI18058137-17 6/7 Subject to change without notice
AI1805 Evaluation mother board Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a micro-strip to coplanar transition to access the package. Recommended for the implementation of this product on a module board. Decoupling capacitors of 100pF ±5% & 10nF ±10% are recommended for all DC accesses. See application note AN0024 for details. Ref. : AI18058137-17 7/7 Subject to change without notice