TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm FRD included between emitter and collector Enhancement mode type High speed : t f = 0.25μs (Typ.) (I C = 50A) Low saturation voltage : V CE (sat) = 2.1V (Typ.) (I C = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage V CES 600 V Gate Emitter Voltage V GES ±20 V Collector Current DC I C 30 1ms I CP 100 A Emitter Collector Forward Current DC I F 30 1ms I FP 60 A JEDEC Collector Power Dissipation (Tc = 25 C) P C 75 W Junction Temperature T j 150 C Storage Temperature Range T stg 55 to 150 C JEITA TOSHIBA 2-16F1A Weight: 5.8 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). EQUIVALENT CIRCUIT MARKING TOSHIBA GT30J322 Part No. (or abbreviation code) Lot No. Note1 Note1: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Start of commercial production 1998-11 1

ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Gate Leakage Current I GES V GE = ±20V, V CE = 0 ±500 na Collector Cut Off Current I CES V CE = 600V, V GE = 0 1.0 ma Gate Emitter Cut Off Voltage V GE (OFF) I C = 50mA, V CE = 5V 3.0 6.0 V Collector Emitter Saturation Voltage V CE (sat) I C = 50A, V GE = 15V 2.1 2.8 V Input Capacitance C ies V CE = 10V, V GE = 0, f = 1MHz 2500 pf Rise Time t r 0.20 Switching Time Turn On Time t on 0.30 Fall Time t f 0.25 0.40 Turn Off Time t off 0.40 μs Peak Forward Voltage V F I F = 30A, V GE = 0 2.0 V Reverse Recovery Time t rr I F = 30A, V GE = 0 di / dt = 100A / μs 0.2 μs Thermal Resistance (IGBT) R th (j c) 1.67 C / W Thermal Resistance (Diode) R th (j c) 2.27 C / W 2

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1000 SAFE OPERATING AREA COLLECTOR CURRENT I C (A) 100 10 1 IC MAX.(PULSED) IC MAX. (CONTINUOUS) DC OPERATION SINGLE NON-REPETITIVE PULSE Tc=25 CURVES MUST BE DERATED LINEARTY WITH INCREASE IN 1ms 10ms 100μs TEMPERATURE. 0.1 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE V CE (V) 10μs 4

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