General Description The is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 0 to keep external part count low, but the addition of an external resistor and capacitor between pin and pin will increase the gain to any value from 0 to 00. The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is only mw when operating from a V supply, making the ideal for battery operation. This IC is available in SOIC- and DIP- packages. Features Wide Supply Voltage Range: V to V Low Quiescent Current Drain: ma Voltage Gains from 0 to 00 Battery Operation Minimum External Parts Low Power Dissipation Low Distortion Applications AM-FM Radio Amplifier Cordless Phone TV Sound Systems Portable Tape Player Amplifier Intercoms Line Drivers Ultrasonic Drivers Small Servo Drivers Power Converters SOIC- DIP- Figure. Package Types of Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited
Pin Configuration M Package/P Package (SOIC-/DIP-) GAIN GAIN INPUT - BYPASS INPUT GND V OUT Top View Figure. Pin Configuration of Functional Block Diagram GAIN GAIN BYPASS KΩ KΩ 0Ω.KΩ KΩ V OUT INPUT - 0KΩ 0KΩ INPUT GND Figure. Functional Block Diagram of Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited
Ordering Information - Circuit Type Package M: SOIC- P: DIP- E: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package Temperature Range Part Number Marking ID Tin Lead Lead Free Tin Lead Lead Free Packing Type M M-E M M-E Tube SOIC- 0 to 0 o C MTR MTR-E M M-E Tape & Reel DIP- 0 to 0 o C P P-E P P-E Tube BCD Semiconductor's Pb-free products, as designated with "E" suffix in the part number, are RoHS compliant. Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited
Absolute Maximum Ratings (Note ) Parameter Symbol Value Unit Power Supply Voltage V P. W Package Dissipation (Note ) P D M 0. W Input Voltage V IN -0. to 0. V Junction Temperature T J 0 o C Storage Temperature Range T STG - to 0 o C DIP- Soldering (0 sec.) Soldering Information 0 SOIC- ( sec.) DIP- 0 Thermal Resistance θ JA SOIC- Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note : For operation in ambient temperatures (T A ) above o C, the device must be derated based on a 0 o C maximum junction temperature and ) a thermal resistance of 0 o C/W junction to ambient for the Dual-in-Line package and ) a thermal resistance of o C/W for the small outline package. o C o C/W Recommended Operating Conditions Parameter Min Max Unit Operating Temperature Range 0 0 o C Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited
Electrical Characteristics (Note ) Operating Conditions: T A = o C unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Supply Voltage V Quiescent Current I Q =V, V IN =0 ma Output Power P OUT =9V, =Ω, THD=0% 00 00 mw =V, =Ω, THD=0% 0 00 mw =V, =Ω, THD=0% 00 000 mw V Voltage Gain G CC =V, f=khz db V 0µF from Pin to db Bandwidth BW =V, Pins and open 00 KHz Total Harmonic Distortion Power Supply Rejection Ratio THD PSRR =V, =Ω, P OUT= mw f=khz, Pins and open =V, f=khz, C BYPASS =0µF, Pins and open, Referred to Output Input Resistance R IN 0 KΩ Input Bias Current I BIAS =V, Pins and open 0 na Note : All voltages are measured with respect to the ground pin, unless otherwise specified. 0. % db Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics Supply Current (ma) Output Voltage (V) (peak to peak) 0 =Ω =Ω =Ω =Ω 0 Supply Voltage (V) 0 9 0 Supply Voltage (V) Figure. Quiescent Supply Current vs. Supply Voltage Figure. Peak-to-Peak Output Voltage Swing vs. Supply Voltage 0. 0.0 =V =Ω P OUT =mw C,=0 Voltage Gain (db) 0 0 0 C,=0 C,=0u THD (%) 0. 0. 0. 0 0. 0 00 k 0k 00k M Frequency (Hz) 0.0 0 00 k Frequency (Hz) 0k Figure. Voltage Gain vs. Frequency Figure. Distortion vs. Frequency THD (%) 0 9 =V =Ω f=khz Device Dissipation (W).0.....0 0. 0. =V =9V =V =Ω 0. 0. 0 0 00,000 Power Out (mw) 0.0 0.0 0. 0. 0. 0. 0. Output Power (W) Figure. Distortion vs. Output Power Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited Figure 9. Device Dissipation vs. Output Power (Ω Load)
Typical Performance Characteristics (Continued) Device Dissipation (W).0.....0 0. 0. 0. 0. =V =V =9V =V =Ω Device Dissipation (W).0 0. 0. 0. 0. =V =V =9V =V =Ω 0.0 0.0 0. 0. 0. 0. 0. 0. 0. 0. 0.9.0 Output Power (W) 0.0 0.0 0. 0. 0. 0..0.....0 Output Power (W) Figure 0. Device Dissipation vs. Output Power (Ω Load) Figure. Device Dissipation vs. Output Power (Ω Load) Typical Applications (Note ) 0µF - 0µF V IN 0.0µF 0KΩ 0Ω V IN 0KΩ - 0µF 0.0µF 0Ω BYPASS Figure. Amplifier With Gain=0 Figure. Amplifier With Gain=00 Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited
Typical Applications (Note ) (Continued) V IN 0KΩ.KΩ - 0.0µF 0Ω BYPASS 0µF 0µF ELDEMA CF-S- V - ma - 90Ω 0µF 0.0µF BYPASS KΩ.KΩ 0.0µF 0µF 0.0µF 0Ω V O Figure. Amplifier With Gain=0 Figure. Low Distortion Power Wienbridge Oscillator V IN 0KΩ - 0KΩ 0.0µF 0.0µF 0µF V O 0.µF - 0µF 0KΩ V O 0Ω KΩ 0KΩ f = KHz Figure. Amplifier With Bass Boost Figure. Square Wave Oscillator Note : The R-C series circuit from output to ground, which will make the output stable, is depended on the different capacitive load in the circuit, the correct values for the R and C can be determined through experimental methods. Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited
Mechanical Dimensions SOIC- Unit: mm(inch).00(0.).00(0.0).0(0.0).0(0.09) 0.0(0.0).000(0.09).0(0.00) TYP 0.00(0.00) 0.00(0.0) R0.0(0.00) 0.(0.0) 0.(0.09) D 0 D 0:.00(0.).00(0.) φ 0.00(0.0) 0.00(0.00).00(0.0).000(0.) 0.0(0.0) 0.0(0.00) 0.90(0.00) 0.0(0.00) 0.900(0.0) 0.0(0.0) 0.00(0.0) R0.0(0.00) Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited 9
Mechanical Dimensions (Continued) DIP- Unit: mm(inch) 0.00(0.0).(0.00) TYP.0(0.00)TYP.0(0.).0(0.0).00(0.).00(0.).000(0.).00(0.) 0.0(0.00)MIN 0.(0.00)TYP 0.0(0.0) 0.0(0.0) 0.0(0.00)MIN.0(0.00) TYP.00(0.) 9.00(0.0) 0.0(0.00) 0.0(0.0) R0.0(0.00).00(0.).00(0.0) Φ.000(0.) Depth 0.00(0.00) 0.00(0.00) 9.000(0.) 9.00(0.0) Apr. 00 Rev.. BCD Semiconductor Manufacturing Limited 0
BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 00, Yi Shan Road, Shanghai 00, China Tel: -- 9, Fax: --0 000 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation F, Zone B, 900, Yi Shan Road, Shanghai 00, China Tel: --9 99, Fax: -- 9 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, F, Noble Center, No.00, rd Fuzhong Road, Futian District, Shenzhen 0, China Tel: -- 9 Fax: -- Taiwan Office BCD Semiconductor (Taiwan) Company Limited F, 9-, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: -- 0 Fax: -- 0 USA Office BCD Semiconductor Corporation 090 Huntwood Ave. Hayward, CA 9, U.S.A Tel : -0--9 Fax: -0--