Optocoupler with High-Voltage Darlington Output Parameter Rating Units Breakdown Voltage - BO 35 V P Current Transfer Ratio - CTR -8 % Features 5V rms Input/Output Isolation 35V P Breakdown Voltage Small 4-Pin Package Surface Mount Tape & Reel Version Available Applications Telecom Switching Tip/Ring Circuits Hook Switch Modem Switching (Laptop, Notebook, Pocket Size Loop Detect Ringing Detect Current Sensing Description The is a unidirectional input optocoupler with a high-voltage Darlington output. Light output from the highly efficient infrared LED activates the optically coupled silicon NPN photo-darlington output transistor. The input LED and the output transistor are separated by a 5V rms isolation barrier. With a LED current of only ma, a current transfer ratio of % to 8% is guaranteed at the collector of the 35V Darlington output transistor. The 's low input current, high current transfer ratio, high output voltage capability, and large isolation barrier rating make it ideal for many applications such as telecom, industrial, and power control. Approvals UL 577 Approved Component: File E7627 CSA Certified Component: Certificate 727 EN 695 Certified Component: TUV Certificate B 3 2 82667 3 Ordering Information Part Number G GR GRTR Description 4-Pin DIP (/Tube 4-Pin Surface Mount (/Tube 4-Pin Surface Mount (/Reel Pin Configuration A 4 C K 2 3 E DS--R6 www.ixysic.com
Absolute Maximum Ratings @ 25ºC Parameter Ratings Units Breakdown Voltage, BO 35 V P Reverse Input Voltage 5 V Input Control Current 5 ma Peak (ms A Input Power Dissipation 5 mw Phototransistor Power Dissipation 2 5 mw Isolation Voltage, Input to Output 5 V rms Operational Temperature -4 to +85 C Storage Temperature -4 to +25 C Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Typical values are characteristic of the device at +25 C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manfacturing testing requirements. Derate linearly.33 mw / o C 2 Derate linearly.5 mw / o C Electrical Characteristics @ 25ºC Parameters Conditions Symbol Min Typ Max Units Output Characteristics Phototransistor Breakdown Voltage I CEO =µa BO 35 - - V P Emitter-Collector Breakdown Voltage I E =.ma BV ECO.3 - - V Phototransistor Output (Dark Current O =2V, =ma I CEO - - na Saturation Voltage I C =ma, =ma - - V I CE(Sat C =ma, =ma - -.2 V Current Transfer Ratio =ma, =V CTR 55 8 % Output Capacitance O =5V, f=mhz C OUT - 3 - pf Input Characteristics Input Control Current I C =ma, =V -.7 ma Input Voltage Drop =5mA V F.9.2.4 V Input Reverse Current V R =5V I R - - µa Common Characteristics Input to Output Capacitance - C I/O - 3 - pf Switching Characteristics @ 25ºC Characteristic Symbol Test Condition Typ Units Rise Time t R 4 Fall Time t F V =V CC 2.6 Turn-On Time t on =ma 2.75 Storage Time t S R L = 2 Turn-Off Time t off 6 s Turn-On Time t on V CC =V Storage Time t S =6mA 4 Turn-Off Time t off R L =8 8 t F t R 9% % t on t S Switching Time Test Circuit t off V CC R L Pulse Width=5ms Duty Cycle=5% 2 www.ixysic.com R6
PERFORMANCE DATA @25ºC (Unless Otherwise Noted* 5 LED Current ( vs. LED Forward Voltage (V F LED Current ( vs. LED Forward Voltage (V F.6 LED Forward Voltage vs. Temperature LED Current (ma 4 3 2..5.2.25.3.35.4.45.5.55 LED Forward Voltage (V LED Current (ma...5.2.25.3.35.4.45.5.55 LED Forward Voltage (V LED Forward Voltage (V.5 =5mA.4.3 =2mA.2 =ma. =5mA =2mA. -4-2 2 4 6 8 Temperature (ºC CTR vs. LED Current (, =.5V, CTR (% =.V. LED Current (ma Collector Current I C (ma. Collector Current vs. LED Current ( =.5V =.V. LED Forward Current (ma Collector Current I C (ma 375 3 225 5 75 Collector Current vs. Temperature ( =.2V =ma =.5mA =ma =5mA -4-2 2 4 6 8 Temperature (ºC Collector Current I C (ma 8 6 4 2 8 6 4 2 Collector Current vs. Collector-Emitter Voltage = ma = 5mA = 2mA = ma =.5mA.2.4.6.8..2.4.6.8 2. Collector-Emitter Voltage (V Leakage Current (µa 3. 2.5 2..5..5 Leakage vs. Temperature (O = 35V -4-2 2 4 6 8 2 Temperature (ºC Breakdown Voltage BO (V P Breakdown Voltage vs. Temperature 45 44 43 42 4 4 39 38 37-4 -5 35 6 85 Temperature (ºC Switching Time vs. Load Resistance t OFF, =6mA Switching Time ( s t OFF, =.6mA t ON, =.6mA t ON, =6mA. K K K Load Resistance ( *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R6 www.ixysic.com 3
Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-2, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-33. ESD Sensitivity Device Moisture Sensitivity Level (MSL Rating G MSL GR MSL 3 This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Soldering Profile Provided in the table below is the Classification Temperature (T C of this product and the maximum dwell time the body temperature of this device may be above (T C - 5ºC. The classification temperature sets the Maximum Body Temperature allowed for this device during lead-free reflow processes. Additionally, for the GR, the solder reflow profile given in Technical Brief TB-2 "Pb-Free Solder Reflow Profile for Select Devices" must be followed. For the through-hole device, G, and any other processes, the guidelines of J-STD-2 must be observed. Board Wash Device Maximum Body Temperature (T c Time GR 25ºC 5 seconds IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. Board washing to reduce or remove flux residue following the solder reflow process is acceptable provided proper precautions are taken to prevent damage to the device. These precautions include, but are not limited to: using a low pressure wash and providing a follow-up bake cycle sufficient to remove any moisture trapped within the device due to the washing process. Due to the variability of the wash parameters used to clean the board, determination of the bake temperature and duration necessary to remove the moisture trapped within the package is the responsibility of the user (assembler. Cleaning or drying methods that employ ultrasonic energy may damage the device, and should not be used. Additionally, the device must not be exposed to flux or solvents that are Chlorine- or Fluorine-based. 4 www.ixysic.com R6
MECHANICAL DIMENSIONS G.99 (.39 3.3 ±.5 (.3 ±.2.254 (. PC Board Pattern (Top View 6 -.8 DIA. (6 -.3 DIA. 2.54 ±.27 (. ±.5 6.35 ±.27 (.25 ±.5 7.62 ±.27 (.3 ±.5 4.572 ±.27 (.8 ±.5 9º (ALL.457 ±.76 (.8 ±.3 2.54 ±.27 (. ±.5 PIN 2.59 (.85.58 (.2 3.75 (.25 9º (ALL 9.44 ±.58 (.36 ±.2 7.62 ±.25 (.3 ±. 6.35 ±.27 (.25 ±.5 Dimensions mm (inches GR 2.54 ±.27 (. ±.5 3.3 ±.5 (.3 ±.2 PCB Land Pattern.635 ±.254 (.25 ±. 2.287 (.9 6.35 ±.27 (.25 ±.5 9.525 (.375 7.62 ±.254 (.3 ±. 8.8 (.346 9º ± º (ALL PIN #.99 (.39 4.572 ±.27 (.8 ±.5.254 (. 3.48 ±.76 (.37 ±.3.6 (.63.95 (.37 2.54 ±.27 (. ±.5 2.287 ±.27 (.9 ±.5.2 min /.254 max (.4 min /. max Dimensions mm (inches R6 www.ixysic.com 5
GRTR Tape & Reel 33.2 Dia (3. Dia B =5. Top Cover (.97 Tape Thickness.2 Max (.4 Max K =4.2 (.65 K =3.7 (.46 A =. (.394 P=2. (.472 W=6.±.3 (.63±.2 Embossed Carrier Embossment Dimensions mm (inches NOTES:. All dimensions meet EIA-48-C requirements 2. Unless otherwise noted, tolerances = ±. (.4 For additional information please visit our website at: www.ixysic.com IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. 6 Specification: DS--R6 Copyright 26, IXYS Integrated Circuits Division All rights reserved. Printed in USA. /7/26