Using the High Voltage Physical Layer In the S12ZVM family By: Agustin Diaz

Similar documents
Dead-Time Compensation Method for Vector-Controlled VSI Drives Based on Qorivva Family

Reference Oscillator Crystal Requirements for MKW40 and MKW30 Device Series

AN4269. Diagnostic and protection features in extreme switch family. Document information

Automated PMSM Parameter Identification

Vybrid ASRC Performance

1.2 A 15 V H-Bridge Motor Driver IC

1.2 A 15 V H-Bridge Motor Driver IC

Improving feedback current accuracy when using H-Bridges for closed loop motor control

0.7 A 6.8 V Dual H-Bridge Motor Driver

Reference Circuit Design for a SAR ADC in SoC

Repetitive Short-circuit Performances

Two Channel Distributed System Interface (DSI) Physical Interface Device

NXP Repetitive short-circuit performances

MPXM2051G, 0 to 50 kpa, Gauge Compensated Pressure Sensors

i.mx 6 Series HDMI Test Method for Eye Pattern and Electrical Characteristics

Optimizing Magnetic Sensor Power Operations for Low Data Rates

Examples of using etimer on Power Architecture devices

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Rework List for the WCT-15W1COILTX Rev.3 Board

Characteristic Symbol Value (2) Unit R JC 57 C/W

Enhancement Mode phemt

Parallel Configuration of H-Bridges

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Advanced Doherty Alignment Module (ADAM)

Driver or Pre -driver General Purpose Amplifier

Advanced Doherty Alignment Module (ADAM)

Capacitive Sensing Interface of QN908x

Enhancement Mode phemt

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Characteristic Symbol Value (2) Unit R JC 92.0 C/W

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Local Interconnect Network (LIN) Enhanced Physical Interface with Selectable Slew- Rate

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

800 MHz Test Fixture Design

Reaction Module 2 for Peak&Hold Injection Control on the MPC5746R Using REACM2 Utility Functions

Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT

Current sense chain accuracy

MPC5606E: Design for Performance and Electromagnetic Compatibility

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Single Phase Two-Channel Interleaved PFC Operating in CrM Using the MC56F82xxx Family of Digital Signal Controllers

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Enhancement Mode phemt

Freescale Semiconductor Data Sheet: Technical Data

RF Power GaN Transistor

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

Enhancement Mode phemt

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

AN4999 Application note

QWKS Ethernet Accessory Card, User's Guide

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

0.7 A dual H-Bridge motor driver with 3.0 V/5.0 V compatible logic I/O

How to Use GDU Module in MC9S08SU16

Migrate PWM from MC56F8013 to MC How to set up the PWM peripheral on the MC56F8247 using the setting of the PWM on the MC56F8013

RF LDMOS Wideband Integrated Power Amplifier

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

In-Depth Understanding of Water Tolerance Feature in Touch-Sensing Software Library

The High-Performance Data Acquisition Circuit

Model-Based Design Toolbox

Freescale Semiconductor

AN3134 Application note

RF LDMOS Wideband Integrated Power Amplifier

Implementing PFC Average Current Mode Control using the MC9S12E128 Addendum to Reference Design Manual DRM064

FlexTimer and ADC Synchronization

PF3000 layout guidelines

IX6611 Evaluation Board

AN Energy Harvesting with the NTAG I²C and NTAG I²C plus. Application note COMPANY PUBLIC. Rev February Document information

MC33816 vs. PT Introduction. NXP Semiconductors Application Note. Document Number: AN5203 Rev. 1.0, 7/2016. Contents

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

MMPF0100 and MMPF0200 layout guidelines. 1 Introduction. NXP Semiconductors Application Note. Document Number: AN4622 Rev. 5.0, 7/2016.

RF LDMOS Wideband Integrated Power Amplifier

Software ISP Application Note

LV8711T. Overview. Features. Specifications. Bi-CMOS LSI PWM Constant-Current Control Stepping Motor Driver

Hardware Design Considerations using the MC34929

LV8400V. Forward/Reverse Motor Driver. Bi-CMOS IC

KEA128LEDLIGHTRD Quick Start Guide. Lighting Control Module Reference Design using Kinetis KEA128

AN2581 Application note

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Using a Linear Transistor Model for RF Amplifier Design

Driver or Pre -driver Amplifier for Doherty Power Amplifiers

AN3332 Application note

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs

56F Phase AC Induction Motor V/Hz Control using Processor Expert TM Targeting Document. 56F bit Digital Signal Controllers. freescale.

1.05 W epoxy board Operating temperature Topr 20 to +100 C Storage temperature Tstg 55 to +150 C

RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET

LV8402V. 2ch Forward/Reverse Motor Driver. Bi-CMOS IC

High Resolution Pulse Generation

Transcription:

Freescale Semiconductor, Inc. Document Number: AN5176 Application Note Rev. 1, 09/2015 Using the High Voltage Physical Layer In the S12ZVM family By: Agustin Diaz Contents 1. Introduction This application note provides an introduction to the High Voltage (HV) physical layer of the S12ZVM32 and S12ZVM16 MCUs. The HV layer is a physical interface that provides single-wire communication. This application note illustrates how to use the HV physical layer for PWM communication. For more information refer to the HV Physical Layer chapter of the S12ZVM reference manual at freescale.com. 1. Introduction... 1 2. The HV Physical Layer... 2 3. PWM Communication... 3 3.1. Initialization... 3 4. Application Example... 4 5. Attachments... 7 2015 Freescale Semiconductor, Inc. All rights reserved.

The HV Physical Layer 2. The HV Physical Layer The HV transmitter is a low-side MOSFET with current limitation and overcurrent transmitter shutdown. A selectable internal pull-up resistor with a serial diode structure is integrated, so no external pull-up components are required for the application in a slave node. The HV physical layer routes the receiver s pin to the channel 3 of the timer 0 in order to capture the rising and falling edges of the PWM signal. The following is a summary of the most notable HV physical layer features: Compliant with the ISO9141 (K-line) standard. Standby mode with glitch-filtered wake-up. Slew rate selection optimized for: 5.2 khz, 10 khz and Fast Mode (up to 125 khz). Switchable 34 k Ohms /330 k Ohms pull-up resistors Overcurrent protection. The following figure illustrates how the HVPHY is internally connected in the S12ZVM32 and S12ZVM16 devices. The HVPHY connects to a TIM IC to capture the PWM. At the same time it can be controlled by software to pull the bus to ground and communicate to the master that there has been an error in the transmission. Figure 1. HVPHY hardware diagram 2 Freescale Semiconductor, Inc.

3. PWM Communication PWM Communication The PWM or Pulse Width Modulation consist in changing the ON and OFF time of a signal in order to allow the control of the power supplied to electrical devices. Although this technique is mainly used for power control and can also be used to transmit certain information. The message is transmitted using the duty cycle of the signal. Depending on the application the duty cycle read by the receiver could mean different commands, also the bus could be pulled down to ground by the slave in order to indicates that an error has occurred. In the example provided by this application note the S12ZVM microcontroller receives a PWM signal from master device and use its duty cycle to set the speed of a BLDC motor. The HV physical layer is routed to the input capture channel 3 of timer TIM0. The timer counter is used to measure the elapsed time of the signal in ON and OFF states. The duty cycle can be obtained by comparing the duration of the ON state to the total period of the signal. The following image illustrates how the communication is established. Control ECU Pump speed-> <- Error condition S12ZVM32/16 Motor Figure 2. HVPHY communication diagram NOTE In the example provided by this application no error condition has been established. 3.1. Initialization To use the HV physical layer follow the steps shown below: Disable dominant timeout feature (LPDTDIS=1) in the LPSLRM register, if needed Enable pull-up resistor in LPCR register (LPPUE=1) Route LPRXD0 to internal timer with T0IC3RR[1:0] = 01 to route the LPRXD0 to TIM0 IC channel 3. LPRXD0 must be linked to the SCI0 RXD (S0L0RR1=1) Enable HV physical layer in the LPCR register (LPE=1) Freescale Semiconductor, Inc. 3

Application Example 4. Application Example In the example attached to this application note the S12ZVM32EVB is driving a Brushless DC Motor (BLDC) and using the HV physical layer reads a PWM signal of 200 Hz and set the motor s speed proportionally to the duty cycle of the PWM signal. No error signal has been implemented in this example. A FreeMaster project was created in order to read out the RPM settings calculated from the PWM input duty cycle. In this example the motor speed is limited by software to a minimum of 1390 RPM and a maximum of 8000 RPM. A 16-bit value variable named requiredspeed is used to set the motor speed and then transformed to RPM in the FreeMaster for better interpretation. The 1390 RPM value is equivalent to a 1990 value in the requiredspeed variable. The 8000 RPM value is equivalent to an 11450 value in the requiredspeed variable. The equation used in order to set the motor s speed according to the PWM duty cycle was the following one: requiredspeed = 11450 1990 DutyCycle + 1990 100 Where the DutyCycle represents the duty cycle captured by the timer routed to HVPHY. Its value goes from 0 to 100. The formula used to approximate the RPM using the requiredspeed variable is: RPM = 12500 17895 requiredspeed This formula is an approximation and may present some variation of +/- 10 RPM on the FreeMaster scope. The 200 Hz PWM signal was generated by a waveform generator and the receiver was an S12ZVM32EVB. The results of the example attached to this application note are showed in the next figures: 4 Freescale Semiconductor, Inc.

Application Example Figure 3. Oscilloscope 1% duty cycle signal Figure 4. FreeMASTER Speed Scope at 1% duty cycle Freescale Semiconductor, Inc. 5

Application Example Figure 5. Oscilloscope 90 % duty cycle signal Figure 6. FreeMASTER Speed Scope at 90% duty cycle 6 Freescale Semiconductor, Inc.

5. Attachments Attachments This application note includes the software that carries out the initialization described in initialization. It includes two examples, one with the configuration and obtaining of the duty cycle of the received signal, and the other one with a BLDC motor controlled by a PWM input signal. S12ZVM32_PWM_Speed (No control) S12ZVML31_PWM_BLDC_Sensorless (Speed Control) Freescale Semiconductor, Inc. 7

How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer's technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. 2015 Freescale Semiconductor, Inc. Document Number: AN5176 Rev. 1 09/2015