STW8NB100 N - CHNNEL 1000V - 1.2Ω - 8 - TO-247 PowerMESH MOSFET PRELIMINRY DT TYPE V DSS R DS(on) I D STW8NB100 1000 V < 1.5 Ω 8 TYPICL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CPBILITY ± 30V GTE TO SOURCE VOLTGE RTING 100% VLNCHE TESTED LOW INTRINSIC CPCITNCE GTE CHRGE MINIMIZED REDUCED VOLTGE SPRED 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. TO-247 INTERNL SCHEMTIC DIGRM PPLICTIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) DC-C CONVERTER FOR WELDING EQUIPMENT ND UNINTERRUPTBLE POWER SUPPLY ND MOTOR DRIVE BSOLUTE MXIMUM RTINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 1000 V V DGR Drain- gate Voltage (R GS = 20 kω) 1000 V V GS Gate-source Voltage ± 30 V I D Drain Current (continuous) at T c = 25 8 I D Drain Current (continuous) at T c = 100 5 I DM ( ) Drain Current (pulsed) P tot Total Dissipation at T c = 25 190 W Derating Factor 1.52 W/ dv/dt(1) Peak Diode Recovery voltage slope 4 V/ T stg Storage Temperature -65 to 150 T j Max. Operating Junction Temperature 150 ( ) Pulse width limited by safe operating area (1) ISD 8 Α, di/dt 200 /µs, VDD V(BR)DSS, Tj TJMX March 1999 1/5
THERML DT R thj-case R thj-amb R thc-sink T l Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.66 30 0.1 300 /W /W /W VLNCHE CHRCTERISTICS Symbol Parameter Max Value Unit I R valanche Current, Repetitive or Not-Repetitive 8 (pulse width limited by T j max) E S Single Pulse valanche Energy (starting T j = 25, I D = I R, V DD = 50 V) 600 mj ELECTRICL CHRCTERISTICS (Tcase = 25 unless otherwise specified) OFF V (BR)DSS Drain-source Breakdown Voltage I D = 250 µ V GS = 0 1000 V I DSS Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating V DS = Max Rating T c = 125 1 50 µ µ I GSS Gate-body Leakage Current (V DS = 0) V GS = ± 30 V ± 100 n ON ( ) V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µ 3 4 5 V R DS(on) Static Drain-source On Resistance I D = 4 1.2 1.5 Ω I D(on) On State Drain Current V DS > I D(on) x R DS(on)max 8 DYNMIC g fs ( ) Forward Traconductance V DS > I D(on) x R DS(on)max I D = 4 8.9 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS = 25 V f = 1 MHz V GS = 0 2900 275 27 2/5
ELECTRICL CHRCTERISTICS (continued) SWITCHING ON t d(on) t r Turn-on Time Rise Time V DD = 500 V R G = 4.7 Ω I D = 3.5 13 Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 800 V I D = 7 68 16 31 95 nc nc nc SWITCHING OFF t r(voff) t f t c Off-voltage Rise Time Fall Time Cross-over Time V DD = 800 V R G = 4.7 Ω I D = 7 40 SOURCE DRIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) V SD ( ) Forward On Voltage I SD = 8 V GS = 0 1.6 V t rr Reverse Recovery I SD = 8 di/dt = 100 /µs 1000 Q rr I RRM Time Reverse Recovery Charge Reverse Recovery Current V DD = 100 V T j = 150 11 21 µc ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area 8 3/5
TO-247 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX. 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respoibility for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licee is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy ll Rights Reserved STMicroelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.. http://www.st.com. 5/5