Dual N-Channel 3 V (D-S) MOSFETs 3 mm mm Top View PRODUCT SUMMARY PowerPAIR 3 x 3 3 mm D Bottom View CHANNEL- CHANNEL-2 V DS (V) 3 3 R DS(on) max. ( ) at V GS = V.285.5 R DS(on) max. ( ) at V GS = 4.5 V.37.53 Q g typ. (nc) 3.2 4.5 I D (A) g 7 3 a Configuration Dual S 2 5 S 2 6 S 2 7 G 2 8 S/D2 (Pin 9) D 4 3 D 2 D G FEATURES TrenchFET Gen IV power MOSFETs % R g and UIS tested Optimized Q gs /Q gs ratio improves switching characteristics Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS CPU core power Computer / server peripherals POL Synchronous buck converter Telecom DC/DC G N-Channel MOSFET G 2 N-Channel 2 MOSFET D S 2 S /D 2 ORDERING INFORMATION Package PowerPAIR 3 x 3 Lead (Pb)-free and halogen-free -T-GE3 ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) PARAMETER SYMBOL CHANNEL- CHANNEL-2 UNIT Drain-source voltage V DS 3 3 V Gate-source voltage V GS ± 2 +2, -6 T C = 25 C 7 3 T C = 7 C 3.8 24 Continuous drain current (T J = 5 C) I D T A = 25 C 8 b, c 4. b, c T A = 7 C 6.3 b, c.3 b, c A Pulsed drain current ( μs pulse width) I DM 25 T C = 25 C 3.4 3.9 Continuous source drain diode current I S T A = 25 C 2.8 b, c 3. b, c Single pulse avalanche current I AS 9 L = mh Single pulse avalanche energy E AS 4. 5 mj T C = 25 C 6 6.7 T C = 7 C.3.7 Maximum power dissipation P D W T A = 25 C 3.4 b, c 3.7 b, c T A = 7 C 2.2 b, c 2.4 b, c Operating junction and storage temperature range T J, T stg -55 to +5 C Soldering recommendations (peak temperature) d 26 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL- CHANNEL-2 TYP. MAX. TYP. MAX. UNIT Maximum junction-to-ambient b, f t s R thja 3 37 27 34 Maximum junction-to-case (drain) Steady state R thjc 6.3 7.8 6 7.5 C/W Notes a. Package limited b. Surface mounted on " x " FR4 board c. t = s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 7 C/W for channel- and 69 C/W for channel-2 g. T C = 25 C S7-249-Rev. A, 2-Feb-7 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static V GS = V, I D = 25 μa Ch- 3 - - Drain-source breakdown voltage V DS V GS = V, I D = 25 μa Ch-2 3 - - I D = 25 μa Ch- - 3 - V DS Temperature coefficient V DS /T J I D = 25 μa Ch-2-2 - I D = 25 μa Ch- - -4.9 - V GS(th) Temperature coefficient V GS(th) /T J I D = 25 μa Ch-2 - -5.6 - V DS = V GS, I D = 25 μa Ch-. - 2.2 Gate threshold voltage V GS(th) V DS = V GS, I D = 25 μa Ch-2.2-2.4 V DS = V, V GS = +2 V, -2 V Ch- - - ± Gate source leakage I GSS V DS = V, V GS = +2 V, -6 V Ch-2 - - ± Zero gate voltage drain current On-state drain current b I DSS I D(on) V DS = 3 V, V GS = V Ch- - - V DS = 3 V, V GS = V Ch-2 - - V DS = 3 V, V GS = V, T J = 55 C Ch- - - 5 V DS = 3 V, V GS = V, T J = 55 C Ch-2 - - 5 V DS 5 V, V GS = V Ch- - - V DS 5 V, V GS = V Ch-2 - - V GS = V, I D = A Ch- -.23.285 Drain-source on-state resistance b V GS = V, I D = 4.4 A Ch-2 -.84.5 R DS(on) V GS = 4.5 V, I D = 5 A Ch- -.3.37 V GS = 4.5 V, I D = 3 A Ch-2 -..53 Forward transconductance b V GS = V, I D = A Ch- - 7 - g fs V GS = V, I D = 4.4 A Ch-2-7 - Dynamic a Input capacitance C iss Ch- - 325 - Ch-2-65 - Output capacitance C oss Channel- Ch- - 66 - V DS = 5 V, V GS = V, f = MHz Ch-2-236 - Reverse transfer capacitance C rss Channel-2 Ch- - 33 - V DS = 5 V, V GS = V, f = MHz Ch-2-2 - C rss /C iss ratio Ch- -..2 Ch-2 -.3.6 V DS = 5 V, V GS = V, I D = 5 A Ch- - 6.6 V DS = 5 V, V GS = V, I D = 4.4 A Ch-2-2 Total gate charge Q g V DS = 5 V, V GS = 4.5 V, I D = 5 A Ch- - 3.2 5 V DS = 5 V, V GS = 4.5 V, I D = 4.4 A Ch-2-4.5 9 Channel- Ch- - - Gate-source charge Q gs V DS = 5 V, V GS = 4.5 V, I D = 5 A Ch-2-2. - Channel-2 Ch- -.2 - Gate-drain charge Q gd V DS = 5 V, V GS = 4.5 V, I D = 4.4 A Ch-2 -.7 - Output charge Q oss V DS = 5 V, V GS = V Gate resistance R g f = MHz Ch- -.5 - Ch-2-6.6 - Ch-.2.85.7 Ch-2.3.4 2.8 V mv/ C V na μa A S pf nc S7-249-Rev. A, 2-Feb-7 2 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic a Turn-on delay time t d(on) Channel- Ch- Ch-2 - - 7 8 5 6 Rise time t r V DD = 5 V, R L = 3 Ch- - 4 8 I D 5 A, V GEN = V, R g = Ch-2-5 3 Turn-off delay time t d(off) Channel-2 Ch- - V DD = 5 V, R L =.5 Ch-2-7 35 7 5 Channel- Ch-2-5 3 Fall time t f I D A, V GEN = V, R g = Ch- - 8 2 Ch-2-7 5 Turn-on delay time t d(on) Ch- - 4 3 ns Rise time t r V DD 2 = V, R L = Ch- - 53 I D 5 A, V GEN = 4.5 V, R g = Ch-2-5 Turn-off delay time t d(off) Channel-2 V DD = 5 V, R L =.5 Ch- Ch-2 - - 6 2 3 Fall time t f I D A, V GEN = 4.5 V, R g = Ch- - 3 6 Ch-2-2 Drain-Source Body Diode Characteristics Ch- - - 3.4 Continuous source-drain diode current I S T C = 25 C Ch-2 - - 3.9 Ch- - - 25 Pulse diode forward current (t = μs) I SM Ch-2 - - A I S = 5 A, V GS = V Ch- -.87.2 Body diode voltage V SD I S = A, V GS = V Ch-2 -.8.2 V Body diode reverse recovery time t rr Ch- - 2 4 Ch-2-2 4 ns Body diode reverse recovery charge Q rr Channel- Ch- - 5 3 I F = 5 A, di/dt = A/μs, T J = 25 C Ch-2-2 nc Reverse recovery fall time t Channel-2 Ch- - 3 - a I F = A, di/dt = A/μs, T J = 25 C Ch-2-2.5 - Ch- - 7 - Reverse recovery rise time t b Ch-2-7.5 - ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width 3 μs, duty cycle 2 % Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S7-249-Rev. A, 2-Feb-7 3 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
CHANNEL- TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 25 25 2 V GS = V thru 4 V 2 5 5 V GS = 3 V 5 5 T C = 25 C T C = 25 C T C =-55 C.5.5 2 2.5 3 V DS - Drain-to-Source Voltage (V) 2 3 4 5 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics.5 5 R DS(on) - On-Resistance (Ω).4.3.2. V GS = 4.5 V V GS = V C - Capacitance (pf) 4 3 2 C oss C iss 5 5 2 25 C rss 5 5 2 25 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance V GS - Gate-to-Source Voltage (V) 8 6 4 2 I D = 5 A V DS = 7.5 V V DS = 5 V V DS = 24 V 2 4 6 8 Q g - Total Gate Charge (nc) R DS(on) - On-Resistance (Normalized) 2..8.6.4.2..8 I D = 5 A V GS = V, 4.5 V.6-5 -25 25 5 75 25 5 T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature S7-249-Rev. A, 2-Feb-7 4 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
CHANNEL- TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).2 I S - Source Current (A) T J = 5 C T J = 25 C R DS(on) - On-Resistance (Ω)..8.6.4.2 I D = 5 A T J = 25 C T J = 25 C..2.4.6.8..2 V SD - Source-to-Drain Voltage (V) 2 4 6 8 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 5 2. 4 V GS(th) (V).8.6.4 I D = 25 μa Power (W) 3 2.2. -5-25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient R DS(on) Limited () I DM Limited I D(on) Limited μs Safe Operating Area, Junction-to-Ambient ms ms ms s. s DC T A = 25 C Single pulse BVDSSLimited.. V DS - Drain-to-Source Voltage (V) () V GS > minimum V GS at which R DS(on) is specified S7-249-Rev. A, 2-Feb-7 5 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
CHANNEL- TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2 2 6 2 8 4 Power (W) 5 5 25 5 75 25 5 T C - Case Temperature ( C) 25 5 75 25 5 T C - Ambient Temperature ( C) Current Derating a Power, Junction-to-Case Note a. The power dissipation P D is based on T J max. = 25 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S7-249-Rev. A, 2-Feb-7 6 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
CHANNEL- TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single pulse 3. T JM -T A = P DM Z (t) thja 4. Surface mounted..... Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t 2 t. Duty cycle, D = t 2 2. Per unit base = R thja = 7 C/W Normalized Effective Transient Thermal Impedance Duty Cycle =.5.2..5.2 Single pulse..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S7-249-Rev. A, 2-Feb-7 7 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5 V GS = V thru 4 V 5 4 4 3 2 V GS = 3 V.5.5 2 V DS - Drain-to-Source Voltage (V) 3 2 T C = 25 C T C = 25 C T C =-55 C 2 3 4 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 84.25 R DS(on) - On-Resistance (Ω).65.5.65 V GS = 4.5 V V GS = V C - Capacitance (pf) 63 42 2 C oss C iss.5 2 3 4 5 On-Resistance vs. Drain Current C rss 6 2 8 24 3 V DS - Drain-to-Source Voltage (V) Capacitance V GS - Gate-to-Source Voltage (V) 8 6 4 2 I D = 4.4 A V DS = 8 V V DS = 5 V, 24 V R DS(on) - On-Resistance (Normalized).65.4.5.9 V GS = 4.5 V, 3 A V GS = V, 4.4 A 2 4 6 8 Q g - Total Gate Charge (nc) Gate Charge.65-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S7-249-Rev. A, 2-Feb-7 8 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).3 I D =4.4 A.24 I S - Source Current (A) T J = 5 C T J = 25 C R DS(on) - On-Resistance (Ω).8.2.6 T J = 25 C T J = 25 C...3.6.9.2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 2 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.85 I D = 25 μa 5.6 4 V GS(th) (V).35. Power (W) 3 2.85.6-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient Limited by I DM. Limited by R DS(on) * μs ms ms ms s, s T A = 25 C BVDSS Limited.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified DC Safe Operating Area, Junction-to-Ambient S7-249-Rev. A, 2-Feb-7 9 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 35 2 28 Package Limited 5 2 4 Power (W) 7 5 25 5 75 25 5 T C - Case Temperature ( C) Current Derating a 25 5 75 25 5 T C - Case Temperature ( C) Power, Junction-to-Case Note a. The power dissipation P D is based on T J max. = 25 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S7-249-Rev. A, 2-Feb-7 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
CHANNEL-2 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance Duty Cycle =.5.2 Notes: P. DM..5 t t 2 t. Duty Cycle, D =.2 t 2 2. Per Unit Base = R thja = 69 C/W 3. T JM -T A =P DM Z (t) thja Single Pulse 4. Surface Mounted..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5 Single Pulse.2.... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?6828. S7-249-Rev. A, 2-Feb-7 Document Number: 6828 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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