BAS6HTG Small Signal Diode SOD-33 A March Connection Diagram BAS6HTG Small Signal Diode Absolute Maximum Ratings * T A = 5 C unless otherwise noted Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 85 V I (AV) Average Rectified orward Current ma I Non-repetitive Peak orward Surge Current SM Pulse Width =. second 6 ma T STG Storage Temperature Range -65 to +5 C T J Operating Junction Temperature -55 to +5 C * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: )These ratings are based on a maximum junction temperature of 5 degrees C. ) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P D Power Dissipation mw R θja Thermal Resistance, Junction to Ambient 6 C/W Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min. Max. Units V R Breakdown Voltage I R = 5. 85 V V orward Voltage I =.ma I = ma I = 5mA I = 5mA I R Reverse Leakage V R = 75V V R = 5V, T A = 5 C V R = 75V, T A = 5 C 75 855..5 C T Total Capacitance V R =, f =.MHz. p t rr Reverse Recovery Time I = I R = ma, I RR =.ma, 6. ns R L = Ω. 3 5 mv mv V V airchild Semiconductor Corporation www.fairchildsemi.com BAS6HTG Rev. A
Typical Performance Characteristics Reverse Voltage, V R [v] R 5 4 3 3 5 3 5 Reverse Current, I R [ua] igure. Reverse Voltage vs Reverse Current BV -. to Reverse Current, I R [na] 5 5 5 3 5 7 Reverse Voltage, V R [v] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten () Degree C increase in Temperature igure. Reverse Current vs Reverse Voltage IR - to V BAS6HTG Small Signal Diode orward Voltage, V [mv] 485 45 4 35 5 5 3 5 3 5 orward Current, I [ua] orward Voltage, V [mv] 75 7 65 6 55 5 45...3.5 3 5 orward Current, I [ma] igure 3. orward Voltage vs orward Current V -. to igure 4. orward Voltage vs orward Current V -. to ma orward Voltage, V [V].5.4..8.6 3 5 5 orward Current, I [ma] Total Capacitance, C T [p].3.. 4 6 8 4 5 Reverse Voltage [V] igure 5. orward Voltage vs orward Current V - - 8mA igure 6. Total Capacitance airchild Semiconductor Corporation www.fairchildsemi.com BAS6HTG Rev. A
Typical Performance Characteristics (Continued) Reverse Recovery Time, t rr [ns] 4 3.5 3.5.5 3 4 5 6 Reverse Current [ma] IRR (Reverse Recovery Current) =. ma - Rloop = Ohms igure. Reverse Recovery Time vs Reverse Current TRR - IR ma vs 6mA Current [ma] D 4 5 4 I - ORWARD CURRENT STEADY STATE - ma R I(AV) - AVERAGE RECTIIED CURRENT - ma Io - AVERAGE RECTIIED CURRENT - ma 5 5 o o A Ambient Temperature, T A [ C] igure. Average Rectified Current (I (AV) ) vs Ambient Temperature (T A ) BAS6HTG Small Signal Diode 5 Power Dissipation, P D [mw] 4 SOT-3 Pkg SOD-33 Pkg DO-35 Pkg 5 5 Average Temperature, I o [ o C] igure 3. Power Derating Curve airchild Semiconductor Corporation www.fairchildsemi.com BAS6HTG Rev. A 3
Physical Dimension SOD-33 BAS6HTG Small Signal Diode Dimensions in Millimeters airchild Semiconductor Corporation www.fairchildsemi.com BAS6HTG Rev. A 4
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