TOSHIBA Schottky Barrier Diode CMS14

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TOSHIBA Schottky Barrier Diode CMS4 Switching Mode Power Supply Applications (Output voltage: 2 V) / Converter Applications Unit: mm Forward voltage: V FM =.58 V (max) Average forward current: I F (AV) = 2. A Repetitive peak reverse voltage: V RRM = 6 V Suitable for compact assembly due to small surface-mount package M FLAT TM (Toshiba package name) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V RRM 6 V Average forward current I F (AV) 2. (Note ) A Non-repetitive peak surge current I FSM 4 (5 Hz) A Junction temperature T j 4~5 C Storage temperature range T stg 4~5 C Note : Tl = 2 C Device mounted on a ceramic board Board size: 5 mm 5 mm Soldering size: 2 mm 2 mm Board thickness:.64 t JEDEC JEITA TOSHIBA 3-4EA (α = 8 ), V R = 3 V Note 2: Using continuously under heavy loads (e.g. the application of Weight:.23 g high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage V FM () I FM =. A (pulse test).45 V FM (2) I FM = 2. A (pulse test).53.58 V Peak repetitive reverse current I RRM () V RRM = 5 V (pulse test).6 I RRM (2) V RRM = 6 V (pulse test) 25 2 μa Junction capacitance C j V R = V, f =. MHz 77 pf Device mounted on a ceramic board (board size: 5 mm 5 mm) (soldering land: 2 mm 2 mm) (board thickness:.64 t) 6 Thermal resistance (junction to ambient) Thermal resistance (junction to lead) R th (j-a) Device mounted on a glass-epoxy board (board size: 5 mm 5 mm) (soldering land: 6 mm 6 mm) (board thickness:.6 t) Device mounted on a glass-epoxy board (board size: 5 mm 5 mm) (soldering land: 2. mm.4 mm) (board thickness:.6 t) 35 2 C/W R th (j-l) 6 C/W 26--3

Marking Abbreviation Code SD Part No. CMS4 Standard Soldering Pad Unit: mm 2..4 3..4 Handling Precaution ) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V RRM : Use this rating with reference to () above. V RRM has a temperature coefficient of.%/ C. Take this temperature coefficient into account designing a device at low temperature. I F (AV) : We recommend that the worst case current be no greater than 8% of the absolute maximum rating of I F (AV) and T j be below 2 C. When using this device, take the margin into consideration by using an allowable Tamax-I F (AV) curve. I FSM : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. T j : Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a T j of below 2 C. 3) Thermal resistance between junction and ambient fluctuates depending on the device s mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) Please refer to the Rectifiers databook for further information. 2 26--3

Instantaneous forward current if (A). Pulse test Tj = 5 C 25 C 75 C 25 C i F v F Average forward power dissipation PF (AV) (W) 2..6.2.8.4 α 36 Conduction angle α P F (AV) I F (AV) α = 6 2 8..2.4.6.8..2.6.2.8 2.4 3. Instantaneous forward voltage vf (V) Maximum allowable lead temperature Tl max ( C) 6 4 2 8 6 Tl max I F (AV) α = 6 2 8 4 α 36 IF (AV) 2 Conduction angle α VR = 3 V.4.8.2.6 2. 2.4 2.8 3.2 Maximum allowable temperature Ta max ( C) 6 4 2 8 6 4 2 α = 6 Ta max IF (AV) Device mounted on a ceramic board: board size: 5 mm 5 mm soldering land: 2 mm 2 mm board thickness:.64 t 2 8 α 36 IF (AV) Conduction angle α VR = 3 V.4.8.2.6 2. 2.4 2.8 3.2 Transient thermal impedance rth (j-a) ( C/W) 5 3 5 3 r th (j-a) t Device mounted on a glass-epoxy board: board size: 5 mm 5 mm Soldering land: 2. mm.4 mm board thickness:.6 t Device mounted on a glass-epoxy board: board size: 5 mm 5 mm Soldering land: 6. mm 6. mm board thickness:.6 t 5 Device mounted on a ceramic board: 3 board size: 5 mm 5 mm Soldering land: 2. mm 2. mm board thickness:.64 t..3..3..3 3 3 3 Time t (s) 3 26--3

Junction capacitance Cj (pf) 5 3 5 3 C j V R Ta = 25 C f = MHz 3 5 3 5 Reverse voltage VR (V) Peak surge forward current IFSM (A) 5 4 3 2 Surge forward current (non-repetitive) Number of cycles Ta = 25 C f = 5 Hz 3 5 3 5 Reverse current IR (ma)... Pulse test I R T j 3 V 2 V V VR = 5 V 4 V 48 V Average reverse power dissipation PR (AV) (W).4.32.24.6.8 VR 36 α Conduction angle α Tj = 25 C P R (AV) V R 8 2 24 3. 2 4 6 8 2 4 6 α = 6. 6 2 8 24 3 36 42 48 Junction temperature Tj ( C) Reverse voltage VR (V) 4 26--3

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