PD-97842 IRF3CMS7N8 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 8V, N-CHANNEL Product Summary Part Number RDS(on) I D IRF3CMS7N8.34 5A Low-Ohmic TO-254AA Description The MOSFET uses Infineon 8V C3 CoolMOS advanced technology to deliver high performance with low RDS(on) and fast switching in a low ohmic hermetic package. The 8V C3 CoolMOS technology uses proven Super Junction design and is implemented with ease of use in mind. Features New Revolutionary High Voltage Technology Extreme dv/dt Rated High Peak Current Capability Ultra Low Gate Charge Ultra Low Effective Capacitance Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter I D @ V GS = V, T C = 25 C Continuous Drain Current 5 I D @ V GS = V, T C = C Continuous Drain Current I DM Pulsed Drain Current 6 P D @T C = 25 C Maximum Power Dissipation 2 W Units Linear Derating Factor.6 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy 96 mj I AR Avalanche Current 5 A E AR Repetitive Avalanche Energy 2 mj dv/dt Peak Diode Recovery 4 V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range Lead Temperature 3 (.63 in. /.6 mm from case for s) C Weight 9.3 (Typical) g A For footnotes refer to the page 2. 26-2-2
IRF3CMS7N8 Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage 8 V V GS = V, I D = 25µA BV DSS / T J Breakdown Voltage Temp. Coefficient.87 V/ C Reference to 25 C, I D =.ma R DS(on) Static Drain-to-Source On-Resistance.34 V GS = V, I D = A V GS(th) Gate Threshold Voltage 2. 4. V V GS(th) / T J Gate Threshold Voltage Coefficient -7.6 mv/ C V DS = V GS, I D = 25µA Gfs Forward Transconductance 9.3 S V DS = 5V, I D = A I DSS V DS = 8V, V GS = V Zero Gate Voltage Drain Current µa 25 V DS = 8V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward V GS = 2V na Gate-to-Source Leakage Reverse - V GS = -2V Q G Total Gate Charge 35 I D = 5A Q GS Gate-to-Source Charge 2 nc V DS = 4V Q GD Gate-to-Drain ( Miller ) Charge 6 V GS = V t d(on) Turn-On Delay Time 8 V DD = 4V tr Rise Time 26 I D = 5A ns t d(off) Turn-Off Delay Time 83 R G = 2.4 t f Fall Time 23 V GS = V Ls +L D Total Inductance 6.8 nh Measured from Drain lead (6mm /.25 in from package) to Source lead (6mm/.25 in from package) C iss Input Capacitance 23 V GS = V C oss Output Capacitance pf V DS = V C rss Reverse Transfer Capacitance 3.3 ƒ =.MHz R G Gate Resistance. ƒ =.MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) 5 I SM Pulsed Source Current (Body Diode) 6 A V SD Diode Forward Voltage.2 V T J = 25 C,I S = 5A, V GS = V t rr Reverse Recovery Time 99 ns T J = 25 C,I F = 5A,V DD 5V Q rr Reverse Recovery Charge 24 µc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Thermal Resistance Parameter Min. Typ. Max. Units R JC Junction-to-Case.63 C/W R JA Junction-to-Ambient (Typical Socket Mount) 48 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = 5V, starting T J = 25 C, L =.7mH, Peak I L = 5A, R G = 25, V GS = 2V. I SD 5A, di/dt 26A/µs, V DD V (BR)DSS,T J 5 C. Pulse width 3 µs; Duty Cycle 2% 2 26-2-2
R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF3CMS7N8 VGS TOP 2V 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 2V 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 4.5V 25µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 25µs PULSE WIDTH Tj = 5 C. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 3. I D = 5A 2.5 2. T J = 5 C.5 T J = 25 C. V DS = V 25 s PULSE WIDTH.5 V GS = V 2 3 4 5 6 7 8 9 V GS, Gate-to-Source Voltage (V). -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature R DS(on), Drain-to -Source On Resistance (.6.4.2 I D = 5A R DS (on), Drain-to -Source On Resistanc ( ).6.4.2 T J = 5 C..8.8.6 T J = 5 C.6 T J = 25 C.4.4.2 T J = 25 C 4 6 8 2 4 6 8 2.2. V GS = V 2 3 4 5 6 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current 3 26-2-2
I SD, Reverse Drain Current (A) C, Capacitance (pf) I D, Drain Current (A) V GS, Gate-to-Source Voltage (V) V (BR)DSS, Drain-to-Source Breakdown Voltage (V) V GS(th) Gate threshold Voltage (V) IRF3CMS7N8 I D =.ma 4.5 4. 3.5 3. 2.5 9 2..5 I D = 5µA I D = 25µA I D =.ma I D = 5mA 8-6 -4-2 2 4 6 8 2 4 6 T J, Temperature ( C ). -6-4 -2 2 4 6 8 2 4 6 T J, Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature 8 V GS = V, f =. MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 4 2 Fig 8. Typical Threshold Voltage Vs Temperature I D = 5A V DS = 64V V DS = 4V V DS = 6V 6 C oss 8 4 6 C iss 4 2 C rss V DS, Drain-to-Source Voltage (V) 2 FOR TEST CIRCUIT SEE FIGURE 7 2 4 6 8 2 Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 6 Fig. Typical Gate Charge Vs. Gate-to-Source Voltage T J = 5 C 2 T J = 25 C 8 4. V GS = V.2.4.6.8..2.4.6 V SD, Source-to-Drain Voltage (V) 25 5 75 25 5 T C, Case Temperature ( C) Fig. Typical Source-Drain Diode Forward Voltage Fig 2. Maximum Drain Current Vs.Case Temperature 4 26-2-2
I D, Drain-to-Source Current (A) E AS, Single Pulse Avalanche Energy (mj) IRF3CMS7N8 4 s ms 36 32 28 I D TOP 6.7A 9.5A BOTTOM 5A OPERATION IN THIS AREA LIMITED BY RDS(on) ms DC 24 2 6.. Tc = 25 C Tj = 5 C Single Pulse V DS, Drain-to-Source Voltage (V) 2 8 4 25 5 75 25 5 Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating Area Fig 4. Maximum Avalanche Energy Vs. Drain Current D =.5..2. PDM t t2 Thermal Response ( Z thjc )...2.5 SINGLE PULSE ( THERMAL RESPONSE ) E-5.... t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 26-2-2
IRF3CMS7N8 5V tp V (BR)DSS V DS L DRIVER R G 2V tp D.U.T I AS. + - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Fig 7a. Gate Charge Waveform Fig 7b. Gate Charge Test Circuit Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 6 26-2-2
IRF3CMS7N8 Case Outline and Dimensions - Low-Ohmic TO-254AA 3.78 [.49] 3.53 [.39] A 3.84 [.545] 3.59 [.535] 6.6 [.26] 6.32 [.249].2 [.5].27 [.5].2 [.4] 7.4 [.685] 6.89 [.665] 2.32 [.8] 2.7 [.79] 3.84 [.545] 3.59 [.535] B 2 3 C 4.48 [.57] 2.95 [.5].84 [.33] MAX. 3.8 [.5] 2X 3X.4 [.45].89 [.35].36 [.4] B A 3.8 [.5] NOTES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M-994. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS = DRAIN 2 = SOURCE 3 = GATE BERYLLIA WARNING PER MIL-PRF-95 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR HiRel Headquarters: N. Sepulveda Blvd., El Segundo, California 9245, USA Tel: (3) 252-75 IR HiRel Leominster: 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 IR HiRel San Jose: 252 Junction Avenue, San Jose, California 9534, USA Tel: (48) 434-5 Data and specifications subject to change without notice. 7 26-2-2
IRF3CMS7N8 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s product and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer s technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 8 26-2-2