VLA Hybrid IC IGBT Gate Driver

Similar documents
VLA Hybrid IC IGBT Gate Driver

VLA Hybrid IC IGBT Gate Driver + DC/DC Converter

VLA500K-01R. Hybrid IC IGBT Gate Driver + DC/DC Converter

VLA546-01R. IGBT Gate Driver

M57161L-01 Gate Driver

VLA567-01R. Hybrid IC IGBT Gate Driver + DC/DC Converter

VLA541-01R. IGBT Gate Driver

VLA Hybrid Gate Driver Application Information. DC-DC Converter V D 15V. V iso = 2500V RMS

VLA554-01R. IGBT Gate Driver + DC/DC Converter

Dimensions in mm Max Max. 4.5 Max. 5.5 Max. 7.5 Max. 4 VCC. S/C Detect Off Time Adjustor. Detect. Circuit. VG Monitor 5 VO.

Hybrid ICs Drive High-Power IGBT Modules

Application Manual for QP12W05S-37 Hybrid Gate Driver

PP300T060-ND. 3-Phase POW-R-PAK IGBT Assembly 300 Amperes/600 Volts

Figure 1.1 Fully Isolated Gate Driver

PP400B060-ND. H-Bridge POW-R-PAK IGBT Assembly 400 Amperes/600 Volts

VLA574-01R V I + V CC DETECT C trip V O V I - F O C S V EE TIMER & RESET LATCH DETECT. 1kΩ INTERFACE UVL 240Ω GATE SHUT DOWN BLOCK DIAGRAM DESCRIPTION

VLA542-01R. 3,7,9,10 pin : Non connection DESCRIPTION FEATURES APPLICATIONS BLOCK DIAGRAM HYBRID IC. Hybrid IC for driving IGBT modules

PS21867-P. Intellimod Module Dual-In-Line Intelligent Power Module 30 Amperes/600 Volts

N 36 NU 37 W 38 V 39 U 40 P 41 U 42 V

PS21562-P. Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts

UNIVERSAL SINK DRIVER. Supply. Voltage reference. Thermal protection. Short-circuit to V cc protection. Short-circuit to GND detection

L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

PM300DSA060 Intellimod Module Single Phase IGBT Inverter Output 300 Amperes/600 Volts

P Q SIGNAL TERMINAL 1 F O (L) 5 F O (H) V S DETAIL "A"

MMBT2222A. SOT-23 Mark: 1P. SOT-6 Mark:.1B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

Y Y D T SQ PIN (10 PLS) L N TERMINAL CODE 5 : FNO 4 : VNC N 3 : CN1 2 : NC 1 : VN1 5 : FPO 4 : VPC P 3 : CP1 2 : NC 1 : VP1. FWDi IGBT C2E1.

T - 4 TYP. XØ (2 PLACES) W SQ. PIN (10 PLACES) TERMINAL CODE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO VP1 RFO AMP E2 C2E1 C1

PS21265-P PS21265-AP Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts

L M 1 F O (L) 5 F O (H) DETAIL "A"

QID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts

CP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts

PS21963-S Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts

AB (2 PLACES) 30 NC 31 P 33 V 34 W

C L DETAIL "B" TERMINAL CODE 1 (VNC) 2 VUFB 3 VVFB 4 VWFB 5 UP 6 VP 7 WP 8 VP1 9 VNC* 10 UN 11 VN 12 WN 13 VN1 HEATSINK SIDE

MITSUBISHI INTELLIGENT POWER MODULES PM800HSA060 FLAT-BASE TYPE INSULATED PACKAGE

V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.

HCPL0600, HCPL0601, HCPL0611, HCPL0637, HCPL0638, HCPL0639 High Speed-10 MBit/s Logic Gate Optocouplers

U (2 TYP.) T WFO VUPC IN F O GND GND OUT OT OUT OT S I

LTV-M701 Small Outline, 5 Lead Low Input Current, High Gain Optocoulplers

S R V U T DETAIL "A" AF AE E1C2 (33) E1C2 (32) Dimensions Inches Millimeters

TENTATIVE PP225D120. POW-R-PAK TM 225A / 1200V Half Bridge IGBT Assembly. Description:

PS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

IRGPC40S PD TO-247AC. Features V CES = 600V. V CE(sat) 1.8V. Description. Absolute Maximum Ratings. Thermal Resistance

V VPI V (14 TYP.) VFO R (2 TYP.) WFO UP UFO V VPC GND GND GND GND GND GND VCC

INSULATED GATE BIPOLAR TRANSISTOR. E n-channel

PS21353-GP. Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts

6N138-L, 6N139-L Single Channel, High Speed Optocouplers

PS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts

8 PIN DIP HIGH SPEED 10MBit/s LOGIC GATE PHOTOCOUPLER

6N135, 6N136 Single Channel, High Speed Optocouplers

CM600YE2N-12F / CM600YE2P-12F TLI-Series (Three Level Inverter) IGBT 600 Amperes/600 Volts

E n-channel. Parameter Min. Typ. Max. Units

D AB Z DETAIL "B" DETAIL "A"

LTV-063L LVTTL/LVCMOS Compatible 3.3V Dual-Channel Optocouplers (10 Mb/s)

Positive Logic High CMR Intelligent Power Module and Gate Drive Interface Photocoupler

IAP200T120 SixPac 200A / 1200V 3-Phase Bridge IGBT Inverter

AC/DC to Logic Interface Optocouplers Technical Data

LDIP- IPM IM (Preliminary)

TO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

Dual Passive Input Digital Isolator. Features. Applications

N P HEATSINK SIDE 25 UN 26 VUFB 27 UP 30 NC 31 NC 32 NC 33 NC 34 NC 35 NC 28 U(VUFS) 29 NC

IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

Technical. Application. Assembly. Availability. Pricing. Phone

Features. +12V to +36V MIC nf. High-Side Driver with Overcurrent Trip and Retry

FBA42060 PFC SPM 45 Series for Single-Phase Boost PFC

NJM4151 V-F / F-V CONVERTOR

ILN2003A HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS TECHNICAL DATA. SCHEMATICS (each Darlington Pair)

8 PIN SOP HIGH SPEED 10MBit/s LOGIC GATE PHOTOCOUPLER

A3950. DMOS Full-Bridge Motor Driver

74VHCT244ATTR OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED)

N Channel Enhancement Mode Silicon Gate

FPAM30LH60 PFC SPM 2 Series for 2-Phase Interleaved PFC

A3916. Dual DMOS Full-Bridge Motor Driver. PACKAGEs: A3916 A3916

TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C)

PM25RSB120 Intellimod Module Three Phase + Brake IGBT Inverter Output 25 Amperes/1200 Volts

PRELIMINARY DRIVER FOR IGBT MODULES

PM30CSJ060 Intellimod Module Three Phase IGBT Inverter Output 30 Amperes/600 Volts

Photocoupler Product Data Sheet LTV-063L Spec No.: DS Effective Date: 07/06/2016 LITE-ON DCC RELEASE

74LS221 Dual Non-Retriggerable One-Shot with Clear and Complementary Outputs

Analog High Speed Coupler, High Noise Immunity, 1 MBd, SOP-5 Package

QSE256, QSE257, QSE258, QSE259 Plastic Silicon OPTOLOGIC Photosensor

PS11035 Intellimod Module Application Specific IPM 20 Amperes/600 Volts

CD4047BC Low Power Monostable/Astable Multivibrator

MIC4421/4422. Bipolar/CMOS/DMOS Process. General Description. Features. Applications. Functional Diagram. 9A-Peak Low-Side MOSFET Driver

New Power Stage Building Blocks for Small Motor Drives

EUP3475 3A, 28V, 1MHz Synchronous Step-Down Converter

PS11036 Intellimod Module Application Specific IPM 30 Amperes/600 Volts

Features. *Siliconix. Load voltage limited only by MOSFET drain-to-source rating +12V MIC4416 CTL GND. Low-Side Power Switch

1A Buck/Boost Charge Pump LED Driver

8 PIN DIP HIGH SPEED 10MBit/s LOGIC GATE PHOTOCOUPLER EL263X series

1/12. Photocoupler LTV-M456 series. Intelligent Power Module and Gate Drive Interface Optocoupler 1. DESCRIPTION. 1.1 Features. Functional Diagram

TENTATIVE PP800D120-V01

8 PIN DIP HIGH SPEED LOW INPUT CURRENT LOGIC GATE PHOTOCOUPLER EL220X SERIES

Features. Applications. Truth Table (Positive Logic) LED ENABLE OUTPUT

Photocoupler Product Data Sheet LTV-0501 Spec No.: DS Effective Date: 06/07/2016 LITE-ON DCC RELEASE

UM1660. Low Power DC/DC Boost Converter UM1660S SOT23-5 UM1660DA DFN AAG PHO. General Description

D AB Z DETAIL "B" DETAIL "A"

Transcription:

Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697-8 (7) 9-77 Hybrid I IBT ate Driver A B K 3 8Ω D Outline Drawing and ircuit Diagram Dimensions Inches Millimeters A.. B. 6... D... 3. F.3 7.. 6. H.. J..6/-.../-. K.8±.6.±. L../-.../-. Note: All dimensions listed are maximums except H, J, K, and L. OPTO OUPLR J INTRFA H LATH TIMR AND RST IRUIT AT SHUTDOWN IRUIT DTT IRUIT L F 3, 7, 9, PIN : N 8 6 V ONTROL PIN FOR t trip DTT PIN V O FAULT OUTPUT V Description: The is a hybrid integrated circuit designed to provide optimum gate drive for IBT modules. This device provides high current optically isolated gate drive with a large output voltage swing. The driver also provides short circuit protection based on desaturation detection. Features: lectrical Isolation Voltage Between Input and Output with Opto-coupler ( Vrms for Minute) Two Supply Driver Topology Built-in Short-ircuit Protection (With a Pin for Fault Output) TTL ompatible Input Interface Application: To drive IBT modules for inverter or A servo systems applications Recommended IBT Modules: 6V module up to 6A V module up to A Rev. /7

Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697-8 (7) 9-77 Absolute Maximum Ratings, T a = unless otherwise specified haracteristics Symbol Units Supply Voltage, D V 8 Volts V - Volts Input Signal Voltage (Applied between Pin 3 -, % Duty ycle, Pulse Width ms) V i - ~ 7 Volts Output Voltage (When the Output Voltage is "H") V O V Volts Output urrent I OHP - Amperes (Pulse Width µs, f khz) I OLP Amperes Isolation Voltage (Sine Wave Voltage 6Hz, for Minute) V O V rms ase Temperature T 8 Operating Temperature (No ondensation Allowable) T opr - ~ 6 Storage Temperature (No ondensation Allowable) T stg - ~ * Fault Output urrent (Applied Pin 8) I FO ma Input Voltage at Pin (Applied Pin ) V R Volts *Differs from H/ condition. lectrical and Mechanical haracteristics, T a = unless otherwise specified, V = V, V = -V) haracteristics Symbol Test onditions Min. Typ. Max. Units Supply Voltage V Recommended Range Volts V Recommended Range -7 - Volts Pull-up Voltage on Primary Side V IN Recommended Range.7. Volts "H" Input urrent I IH Recommended Range. 6 9 ma Switching Frequency f Recommended Range khz ate Resistance R Recommended Range W "H" Input urrent I IH V IN = V 6 ma "H" Output Voltage V OH 3 Volts "L" Output Voltage V OL -8-9 Volts "L-H" Propagation Time t PLH I IH = 6mA. µs "L-H" Rise Time t r I IH = 6mA.3 µs "H-L" Propagation Time t PHL I IH = 6mA.3 µs "H-L" Fall Time t f I IH = 6mA.3 µs Timer t timer Between Start and ancel ms (Under Input Sign "L") Fault Output urrent I FO Applied 8 Pin, R =.7kΩ ma ontrolled Time Detect Short-ircuit t trip Pin : V and More, Pin : Open.6 µs ontrolled Time Detect Short-ircuit ** t trip Pin : V and More, Pins -: pf 3 µs (onnective apacitance) S Detect Voltage V S ollector Voltage of Module Volts **Length of wiring capacitor controlled time detect short-circuit is within cm from Pin and Pin coming and going. Rev. /7

Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697-8 (7) 9-77 Application ircuit V 3 9 8 6 3 D ONTROL FAULT B PS trip 3V V.7k R 8V 8V IBT MODUL V Single Supply Operation omponent Selection: Design Description V, V V/-V Typical, See data sheet for usable limits R Adjust for application requirements. See IBT module application notes for recommendations and power rating, µf-µf V low impedance electrolytic D Ultra fast recovery t rr <ns, High voltage V rrm >V ces (IBT) trip -pf adjusts desaturation trip time (t trip ) B MOS Buffer 7H or similar Must actively pull high to maintain noise immunity Notes: () Power supply decoupling capacitors and should be connected as close as possible to the pins of the gate driver and must be sized to have appropriate SR and ripple current capability for the IBT being driven. () trip should be connected as close as possible to the pins of the gate driver to avoid noise pick-up. (3) All zener diodes W, all resistors.w unless otherwise noted. V 3 9 8 6 3 D ONTROL FAULT B PS trip 3V.7k.7k R 8V 8V IBT MODUL V 8.V Rev. /7

Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697-8 (7) 9-77 PROPAATION DLAY TIM L-H, t PLH, (µs) PROPAATION DLAY TIM H-L, t PHL, (µs).6....8.6.. PROPAATION DLAY TIM VS. AMBINT HARATRTIS V = V V = V R = 3.W V IN =.V LOAD: MDY-NF t PHL t PLH PROPAATION DLAY TIM L-H, t PLH, (µs) PROPAATION DLAY TIM H-L, t PHL, (µs).6....8.6.. PROPAATION DLAY TIM VS. INPUT VOLTA HARATRTIS V = V V = V R = 3.W T a = LOAD: MDY-NF t PHL t PLH ONTROLLD TIM SHORT-IRUIT DTT, t trip, t trip, (µs) PROPAATION DLAY TIM AMBINT TMPRATUR HARATRTIS VS. 6 V = V V = -V 3 t trip : trip = pf t trip : trip = pf 6 8 AMBINT TMPRATUR, T a, ( ) 3..... 6. INPUT SINAL VOLTA, V i, (VOLTS) 6 8 AMBINT TMPRATUR, T a, ( ) ONTROLLD TIM SHORT-IRUIT DTT, t trip, (µs) ONTROLLD TIM SHORT-IRUIT DTT VS. ONNTIV APAITAN HARATRTIS 9 V 8 = V V = -V 7 T a = 6 3 POWR DSIPATION, P D, (WATTS) POWR DSIPATION VS. AMBINT TMPRATUR HARATRTIS (MAXIMUM RATIN) 3 QUNT URRNT, I D, (mamprs) QUNT URRNT VS. SUPPLY VOLTA HARATRTIS (PIN: 6) INPUT SINAL L T a = 7 ONNTIV APAITAN, trip, (p F ) (PIN: ) 6 8 AMBINT TMPRATUR, T a, ( ) 3 SUPPLY VOLTA, V, (VOLTS) (PIN: 6) SWITHIN TIM DFINITIONS V IN (PIN TO 3) t r tf 9% % V O (PIN TO 6) t PLH t PHL % Rev. /7

Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697-8 (7) 9-77 eneral Description The is a hybrid integrated circuit designed to provide gate drive for high power IBT modules. This circuit has been optimized for use with Powerex NF-Series and A-Series IBT modules. However, the output characteristics are compatible with most MOS gated power devices. The features a compact single-in-line package design. The upright mounting minimizes required printed circuit board space to allow efficient and flexible layout. The converts logic level control signals into fully isolated V/-8V gate drive with up to A of peak drive current. ontrol signal isolation is provided by an integrated high speed opto-coupler. Short circuit protection is provided by means of destauration detection. Short ircuit Protection Figure shows a block diagram of a typical desaturation detector. In this circuit, a high voltage fast recovery diode (D) is connected to the IBT s collector to monitor the collector to emitter voltage. When the IBT is in the off state, V is high and D is reverse biased. With D off the () input of the comparator is pulled up to the positive gate drive power supply (V) which is normally V. When the IBT turns on, the comparators () input is pulled down by D to the IBT s V (sat). The (-) input of the comparator is supplied with a fixed voltage (V TRIP ). During a normal on-state condition the comparator s () input will be less than V TRIP and it s output will be low. During a normal off-state condition the comparator s () input will be larger than V TRIP INPUT DLAY t trip AND AT DRIV OMPAR SHUTDOWN R V D V trip IBT MODUL Figure. Desaturation Detector and it s output will be high. If the IBT turns on into a short circuit, the high current will cause the IBT s collector-emitter voltage to rise above V TRIP even though the gate of the IBT is being driven on. This abnormal presence of high V when the IBT is supposed to be on is often called desaturation. Desaturation can be detected by a logical AND of the driver s input signal and the comparator output. When the output of the AND goes high a short circuit is indicated. The output of the AND can be used to command the IBT to shut down in order to protect it from the short circuit. A delay (t TRIP ) must be provided after the comparator output to allow for the normal turn on time of the IBT. The t TRIP delay is set so that the IBTs V has enough time to fall below V TRIP during normal turn on switching. If t TRIP is set too short, erroneous desaturation detection will occur. The maximum allowable t TRIP delay is limited by the IBT s short circuit withstanding capability. In typical applications using Powerex IBT modules the recommended limit is μs. Operation of the Desaturation Detector The Powerex incorporates short circuit protection using desaturation detection as described above. A flow chart for the logical operation of the short-circuit protection is shown in Figure. When a desaturation is detected the hybrid gate driver performs a soft shut down of the IBT and starts a timed (t timer ).ms lock out. The soft turn-off helps to limit the transient voltage that may be generated while interrupting the large short circuit current flowing in the IBT. During the lock out the driver pulls Pin 8 low to indicate the fault status. Normal operation of the driver will resume after the lock-out time has expired and the control input signal returns to its off state. Adjustment of Trip Time The has a default short-circuit detection time delay (t TRIP ) of approximately.μs. This will prevent erroneous detection of short-circuit conditions as long as the series gate resistance (R ) is near the minimum recommended value for the module being used. The.μs delay is appropriate for most applications so adjustment will not be necessary. However, in some low frequency applications it may be desirable to use a larger series gate resistor to slow the switching of the IBT, reduce noise, and limit turn-off transient voltages. When R is increased, the switching delay time of the IBT will also increase. If the delay becomes Rev. /7

Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697-8 (7) 9-77 START V > V S YS INPUT SINAL ON long enough so that the voltage on the detect Pin is greater than V S at the end of the t TRIP delay the driver will erroneously indicate that a short circuit has occurred. To avoid this condition the has provisions for extending the t TRIP delay by connecting a capacitor ( TRIP ) between Pin and V (Pins ). The effect of adding TRIP on trip time is shown in Figure 3. If t TRIP is extended care must be exercised not to exceed the short-circuit withstanding capability of the IBT module. Normally this will be satisfied for Powerex NF and A-Series IBT modules as long as the total shut-down time does not exceed μs. YS DLAY t trip FAULT SINAL (PIN 8) V t timer V YS t trip V > V S YS SLOW SHUTDOWN DABL OUTPUT ST FAULT SINAL WAIT t timer -V V O (PIN ) Figure 3. Adjustment of ttrip YS INPUT SINAL OFF YS LAR FAULT SINAL NABL OUTPUT Figure. Desaturation Detector Rev. /7