KSC288 NPN Epitaxial Silicon Transistor Power Amplifier Collector-Emitter Voltage : O =20V Current Gain Bandwidth Productor : f T =20MHz Collector Dissipation : P C =~2W in Mounted on Ceramic Board Complement to KSA20 Marking 2 8 8 July 2005 P Y W W SOT-89. Base 2. Collector 3. Emitter Weekly code Year code h FE grage Absolute Maximum Ratings T a = 25 C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage 20 V O Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 5 V Collector Current 800 ma I B Base Current 60 ma P C P C * * Mounted on Ceramic Board (250mm 2 x mm) Collector Power Dissipation 500,000 T J Junction Temperature 50 C T STG Storage Temperature -55 ~ 50 C mw mw Electrical Characteristics T a = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BO Collector-Emitter Breakdown Voltage = 0µA, I B = 0 20 V BV EBO Emitter-Base Breakdown Voltage I E = ma, = 0 5 V BO Collector Cut-off Current V CB = 20V, I E = 0 00 na I EBO Emitter Cut-off Current V BE = 5V, = 0 00 na h FE DC Current Gain = 5V, = 00mA 80 240 (sat) Collector-Emitter Saturation Voltage = 500mA, I B = 50mA.0 V V BE (on) Base-Emitter On Voltage = 5V, = 500mA.0 V f T Current Gain Bandwidth Product = 5V, = 00mA 20 MHz C ob Output Capacitance V CB = 0V, I E = 0, f = MHz 30 pf 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
h FE Classification Classification O Y h FE 80 ~ 60 20 ~ 240 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 288 KSC288 SOT-89 3 -- 4,000 2 www.fairchildsemi.com
Typical Performance Characteristics Figure. Static Characteristic 0.6 0.2 I B = 50mA I B = 20mA I B = 0mA I B = 5mA I B = 3mA I B = 2mA I B = ma 0 4 8 2 6 [V], COLLECTOR-EMITTER VOLTAGE Figure 2. Base-Emitter On Voltage.0 0.6 0.2 0.2 0.6.0 V BE [mv], SATURATION VOLTAGE = 5V Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage 000 h FE, DC CURRENT GAIN 00 = 5 V (sat) [V], SATURATION VOLTAGE 0. = 0 I B 0 0 00 000 0 00 000 Figure 5. Power Derating Figure 6. Safe Operating Area.6 0000 P C [W], POWER DISSIPATION.2 Mounted on Ceramic Board (250 mm 2 x mm) MAX. (Pulse) 000 MAX. (DC) 00 0 0 ms 00 ms ms Ta = 25 o C Single Pulse 0 50 00 50 200 Ta [ o C], AMBIENT TEMPERATURE 0. 0 00 000 [V], COLLECTOR-EMITTER VOLTAGE 3 www.fairchildsemi.com
Mechanical Dimensions 4.50 ±0.20.50 ±0.20.65 ± C0.2 SOT-89 2.50 ±0.20 (0.50) 4.0 ±0.20 (0) (.0) 0.50 ±.50 TYP.50 TYP 0 ± 0 + 5 Dimensions in Millimeters 4 www.fairchildsemi.com
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