FEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721

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Transcription:

.8 V to. V, Dual SPST Switches DG, DG, DG DESCRIPTION The DG, DG and DG are precision dual SPST switches designed to operate from single.8 V to. V power supply with low power dissipation. The DG, DG and DG can switch both analog and digital signals within the power supply rail, and conduct well in both directions. Fabricated with advance submicron CMOS process, these switches provide high precision low and flat ON resistance, low leakage current, low parasitic capacitance, and low charge injection. The DG, DG and DG contain two independent Single Pole Single Throw (SPST) switches. Switch- and switch- are normally open for the DG and normally closed for the DG. For the DG, switch- is normally open and switch- is normally closed with a Break-Before- Make switching timing. The DG, DG and DG are the ideal switches for use in low voltage instruments and healthcare devices, fitting the circuits of low voltage ADC and DAC, analog front end gain control, and signal path control. As a committed partner to the community and the environment, manufactures this product with lead (Pb)-free device termination. The TDFN8 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free -E suffix to the ordering part number. The MSOP-8 package has tin device termination and is represented by -E. Both device terminations meet all JEDEC standards for reflow and MSL rating. As a further sign of 's commitment, the DG, DG and D are fully RoHS compliant and Halogen-free. FEATURES Halogen-free according to IEC 9-- definition.8 V to. V single power supply Low and flat switch on resistance,. /typ. Low leakage and parasitic capacitance MHz, - db bandwidth Latch-up current > ma (JESD8) Space saving packages mm x mm TDFN8 MSOP8 Over voltage tolerant TTL/CMOS compatible Compliant to RoHS Directive /9/EC APPLICATIONS Healthcare and medical devices Test instruments Portable meters Data acquisitions Control and automation PDAs and modems Communication systems Audio, video systems Mechanical reed relay replacement FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG, MSOP-8 DG, TDFN-8 NO 8 NO 8 8 NO COM IN COM IN IN COM IN COM IN COM COM IN ADX NO NO NO Pin Bottom View Device Marking for TDFN-8: for DG x = Date/Lot Traceability Code Device Marking for MSOP-8: Document Number: 8 S-99-Rev. F, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

DG, DG, DG DG, MSOP-8 DG, TDFN-8 NC 8 NC 8 8 NC COM IN COM IN IN COM IN COM IN COM COM IN AEX NC NC NC Pin Bottom View Device Marking for TDFN-8: for DG x = Date/Lot Traceability Code Device Marking for MSOP-8: DG, MSOP-8 DG, TDFN-8 NO 8 NO 8 8 NO COM IN COM IN IN COM IN COM IN COM COM IN AFX NC NC NC Pin Bottom View Device Marking for TDFN-8: for DG x = Date/Lot Traceability Code Device Marking for MSOP-8: TRUTH TABLE (DG, DG) DG DG Switches Logic Off On TRUTH TABLE (DG) Logic Switch- Switch- Off On On Off ORDERING INFORMATION Temperature Range Package Part Number - C to 8 C MSOP-8 DGDQ-T-GE DGDQ-T-GE DGDQ-T-GE DGDN-T-GE TDFN-8 DGDN-T-GE DGDN-T-GE ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Referenced to -. to IN, COM, NC, NO a -. to ( +.) V Continuous Current (Any Terminal) ± Peak Current (Pulsed at ms, % duty cycle) ± ma Storage Temperature (D Suffix) - to C Power Dissipation (Packages) b MSOP-8 c TDFN-8 d 8 mw Notes: a. Signals on NC, NO, or COM or IN exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate mw/ C above C. d. Derate. mw/ C above C. Document Number: 8 S-99-Rev. F, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

DG, DG, DG SPECIFICATIONS ( = V) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified = V, ± %, V IN =. or. V e Temp. a Limits - C to 8 C Min. b Typ. c Max. b Unit Analog Signal Range d V NO, V NC V V COM On-Resistance R ON =. V, V COM = V to, I NO, I NC = - ma. R ON Flatness d R ON Match d Switch Off Leakage Current R ON Flatness R ON Match I NO(off) I NC(off) I COM(off) =. V, V COM =. V to. V, I NO, I NC = - ma =. V, V D =. V to. V, I D = - ma =. V V NO, V NC = V/ V, V COM = V/ V Channel-On Leakage Current I COM(on) =. V, V NO, V NC = V COM = V/ V. Digital Control Input High Voltage V INH Input Low Voltage V INL. V Input Capacitance d C in f = MHz. pf Input Current I INL or I INH V IN = or - µa Dynamic Characteristics Turn-On Time t ON V NO or V NC = V, R L =, C L = pf figures and Turn-Off Time t OFF ns Charge Injection d Q INJ C L = nf, V GEN = V, R GEN =, figure.8 pc Bandwidth d BW = V, R L =, C L = pf, - db 9 MHz Off-Isolation d OIRR - R L =, C L = pf, f = MHz Crosstalk d X TALK - 9 Off-Isolation d OIRR - R L =, C L = pf, f = MHz Crosstalk d X TALK - 9 db Source-Off Capacitance d C NC/NO(off) 8 Drain-Off Capacitance d C COM(off) V IN = or, f = MHz 9 pf Channel-On Capacitance d C ON Power Supply Power Supply Current I+ V IN = or, =. V µa -. -. -. -. -. -...9...... na Document Number: 8 S-99-Rev. F, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

DG, DG, DG SPECIFICATIONS ( = V) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified = V, ± %, V IN =.8 or. V e Temp. a Limits - C to 8 C Min. b Typ. c Max. b Unit Analog Signal Range d V NO, V NC V COM V On-Resistance R ON =. V, V COM = V to, I NO, I NC = ma.. R ON Flatness d R ON Flatness =. V, V COM =. V to V, I NO, I NC = ma.. R ON Match d Switch Off Leakage Current R ON Match I NO(off) I NC(off) I COM(off) =. V, I D = ma, V COM =. V to V..9 =. V V NO, V NC = V/. V, V COM =. V/ V =. V Channel-On Leakage Current I COM(on) V NO, V NC = V COM = V/. V Digital Control Input High Voltage V INH. Input Low Voltage V INL.8 V Input Capacitance C in f = MHz. pf Input Current I INL or I INH V IN = or -... µa Dynamic Characteristics Turn-On Time d t ON V NO or V NC = V, R L =, C L = pf figures and Turn-Off Time d t 9 OFF ns Charge Injection d Q INJ C L = nf, V GEN = V, R GEN =, figure. pc Bandwidth d BW = V, R L =, C L = pf, - db MHz Off-Isolation d OIRR - R L =, C L = pf, f = MHz Crosstalk d X TALK - 9 Off-Isolation d OIRR - R L =, C L = pf, f = MHz Crosstalk d X TALK - 9 db Source-Off Capacitance d C NC/NO(off) 8 Drain-Off Capacitance d C COM(off) V IN = or, f = MHz 9 pf Channel-On Capacitance d C ON Power Supply Power Supply Range.8. V Power Supply Current I+ V IN = or, =. V µa Notes: a. = C, = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. V IN = input voltage to perform proper function. f. Not production tested. -. -. -. -. -. -....... na Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 8 S-99-Rev. F, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

DG, DG, DG TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) R ON - On-Resistance (Ω) =.8 V =. V T = C INO/NC = - ma =. V =. V =. V =. V =. V =. V...... V D - Analog Voltage (V) R ON vs. V D and Single Supply Voltage R ON - On-Resistance (Ω) 9. 9. 8. 8................ =. V INO/NC = - ma + C + 8 C - C....8.....8.....8 V D - Analog Voltage (V) R ON vs. Analog Voltage and Temperature R ON - On-Resistance (Ω).......... =. V INO/NC = - ma + C + 8 C - C I+ - Supply Current (A) ma ma µa µa µa na na na =. V =. V =. V =. V =.8 V........... V D - Analog Voltage (V) R ON vs. Analog Voltage and Temperature pa K K K M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Leakage Current (pa) =. V I COM(ON) I COM(OFF) I NO(OFF). - - - 8 Temperature ( C) Leakage Current vs. Temperature V T - Switching Threshold (V)....9 V IH.8.. V IL.......9.8............ - Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 8 S-99-Rev. F, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

DG, DG, DG TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) Loss (db) - - - - - - - - 8 Frequency (MHz) Insertion Loss vs. Frequency Off Isolation (db) - - - - - - - - 8-9 - Frequency (MHz) Off Isolation vs. Frequency - - = V - =. V =. V Crosstalk (db) - - - Charge (PC) - =. V - - - 8-9 - - C L = nf - Frequency (MHz) Crosstalk vs. Frequency - Source Volts Charge Injection vs. Analog Voltage TEST CIRCUITS Switch Input Logic Input NO or NC IN COM Switch Output R L Ω V OUT C L pf Logic Input Switch Output V INH V INL V t ON % t r < ns t f < ns.9 x V OUT t OFF C L (includes fixture and stray capacitance) R V OUT = V L COM R L + R ON Figure. Switching Time Logic "" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. Document Number: 8 S-99-Rev. F, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

DG, DG, DG TEST CIRCUITS V gen + R gen COM IN NC or NO V OUT C L = nf V OUT IN On ΔV OUT Off On V IN = - Figure. Charge Injection Q = ΔV OUT x C L IN depends on switch configuration: input polarity determined by sense of switch. nf nf Analyzer R L NC or NO V,. V IN COM V COM Off Isolation = log V NO/ NC V,. V IN COM NC or NO Meter HP9A Impedance Analyzer or Equivalent f = MHz Figure. Off-Isolation Figure. Channel Off/On Capacitance nf COM NC R L V IN NO COM V IN Analyzer R L Figure. Channel to Channel Crosstalk maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?8. Document Number: 8 S-99-Rev. F, -Sep- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

Package Information Case Outline for TDFN8 x Index Area (D/ x E/) D 8 Pin Indicator (Optional) 8 D b () L Side View Note () All dimensions are in millimeters which will govern. () Max. package warpage is. mm. () Max. allowable burrs is. mm in all directions. () Pin # ID on top will be laser/ink marked. () Dimension applies to meatlized terminal and is measured between. mm and. mm from terminal tip. () Applied only for terminals. () Applied for exposed pad and terminals. e A A A () MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A...... A. -.. -. A. REF. REF b.8..8..9. E D.9....9.8 D..8.8... e. BSC. BSC E.9....9.8 E......9 E. C () K -. - -. - L...... ECN: T--Rev. B, 9-Jun- DWG: 99 K K Bottom View Revison: 9-Jun- Document Number: 9 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

Package Information MSOP: 8 LEADS JEDEC Part Number: MO-8, (Variation AA and BA) (N/) Tips) N N- A B C X. E..8 Max Detail B (Scale: /) Dambar Protrusion.. N/ b.8 M C B S A S b e See Detail B e A With Plating c c. BSC Parting Line L Detail A (Scale: /) NOTES:. Die thickness allowable is.... Dimensioning and tolerances per ANSI.Y.M-99.. Dimensions D and E do not include mold flash or protrusions, and are measured at Datum plane -H-, mold flash or protrusions shall not exceed. mm per side.. Dimension is the length of terminal for soldering to a substrate.. Terminal positions are shown for reference only.. Formed leads shall be planar with respect to one another within. mm at seating plane.. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be.8 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be. mm. See detail B and Section C-C. 8. Section C-C to be determined at. mm to. mm from the lead tip. 9. Controlling dimension: millimeters. D Side View.9. This part is compliant with JEDEC registration MO-8, variation AA and BA.. Datums -A- and -B- to be determined Datum plane -H-.. Exposed pad area in bottom side is the same as teh leadframe pad size. A. R. Min Places Seating Plane. C Seating Plane Base Metal See Detail A A. S Section C-C Scale: / (See Note 8) ς E End View N = 8L MILLIMETERS Dim Min Nom Max Note A - -. A... A..8.9 b. -.8 8 b... 8 c. -. c...8 D. BSC E.9 BSC E.9.. e. BSC e.9 BSC L... N 8 ECN: T-8 Rev. C, -Jul- DWG: 8 C C -H- -A- -C- -B- Document Number: -Jul-

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