UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET

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8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET. DESCRIPTION FEATURES

12N60 12N65 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

-55 to 175 C T j ( ) Pulse width limited by safe operating area.

Transcription:

UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, regulators, audio amplifiers, automotive environment. FEATURES * Low Gate Charge * R DS(on) = 0.048 Ω (TYP.) * Avalanche Rugged Technology * 100% Avalanche Tested * Repetitive Avalanche at 100 C * High Current Capability * Operating Temperature: 150 C * Application Oriented Characterization SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing 25N06L-TA3-T 25N06G-TA3-T TO-220 G D S Tube 25N06L-TN3-T 25N06G-TN3-T TO-252 G D S Tube 25N06L-TN3-R 25N06G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate, D: Drain, S: Source 1 of 6 Copyright 2011 Unisonic Technologies Co., Ltd

ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (V GS =0) V DS 60 V Drain-Gate Voltage (R GS =20kΩ) V DGR 60 V Gate-Source Voltage V GS ± 20 V Drain Current (Continuous) T C =25 C 25 A I D T C =100 C 17 A Drain Current (Pulsed) (Note 2) I DM 100 A Single Pulse Avalanche Energy (starting T J =25 C, I D =25A, =25 V) E AS 100 mj Power Dissipation at T C =25 C TO-220 90 P D TO-252 41 W Junction Temperature T J 150 C Storage Temperature T STG -65 ~ +150 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220 62.5 θ JA TO-252 100 C/W Junction to Case TO-220 1.57 θ JC TO-252 3 C/W UNISONIC TECHNOLOGIES CO., LTD 2 of 6

ELECTRICAL CHARACTERISTICS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =250µA, V GS =0V 60 V Drain-Source Leakage Current (V GS =0) I DSS V DS =Max Rating 1 V DS = Max Rating 0.8, T C =125 C 10 µa Gate- Source Leakage Current (V DS =0) I GSS V GS =±20V ±100 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =250µA 2 2.9 4 V Static Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =12.5A 0.048 0.065 Ω On State Drain Current I D(on) V DS >I D(on) R DS(ON)MAX, V GS =10V 25 A Forward Transconductance (Note 1) g FS V DS >I D(on) R DS(ON)MAX, I D =12.5A 7 11 S DYNAMIC PARAMETERS Input Capacitance C ISS 700 900 pf Output Capacitance C OSS V GS =0V, V DS =25V, f=1mhz 320 450 pf Reverse Transfer Capacitance C RSS 90 150 pf SWITCHING PARAMETERS Total Gate Charge Q G 26 40 nc Gate to Source Charge Q GS =40V, V GS =10V, I D =25A 8 nc Gate to Drain Charge Q GD 9 nc Turn-ON Delay Time t D(ON) =30V, I D =3A, R G =50Ω, 30 45 ns Rise Time t R V GS =10V 90 130 ns Turn-OFF Delay Time t D(OFF) =40V, I D =25A, R G =50Ω, 80 120 ns Fall-Time t F V GS =10V 80 120 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I SD =25A, V GS =0V (Note 1) 1.5 V Source-Drain Current I SD 25 A Source-Drain Current (Pulsed) (Note 2) I SDM 100 A Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%. 2. Pulse width limited by safe operating area UNISONIC TECHNOLOGIES CO., LTD 3 of 6

SWITCHING TIME TEST CIRCUIT V (BR)DSS V D I DM I D Fig. 2 Unclamped Inductive Waveforms V D R L R G D.U.T. 2200µF V GS 3.3µF P W Fig. 3. Switching Times Test Circuits For Resistive Load UNISONIC TECHNOLOGIES CO., LTD 4 of 6

SWITCHING TIME TEST CIRCUIT (Cont.) 12V 47kΩ 100nF 1kΩ V I =20V=V GMAX I G =CONST 100Ω D.U.T. 2200µF 2.7kΩ 1kΩ 47kΩ V G P W Fig. 4 Gate Charge Test Circuit 3.3µF G 25Ω D S A MOS DIODE B A FAST DIODE B A B L=100µH D 1000µF G S D.U.T. R G + - 85Ω Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time UNISONIC TECHNOLOGIES CO., LTD 5 of 6

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 6 of 6