STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N

Similar documents
Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1

STB30NF10 STP30NF10 - STP30NF10FP

STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description

STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description

STB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.

STB160N75F3 STP160N75F3 - STW160N75F3

STP36NF06 STP36NF06FP

STP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description

Obsolete Product(s) - Obsolete Product(s)

STP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram

STP36NF06L STB36NF06L

STB160N75F3 STP160N75F3 - STW160N75F3

STP12NK60Z STF12NK60Z

IRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram.

Obsolete Product(s) - Obsolete Product(s)

STD30NF03L STD30NF03L-1

2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram

STB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description

Obsolete Product(s) - Obsolete Product(s)

STW11NK100Z STW11NK100Z

N-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging

STN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.

STD2NC45-1 STQ1NC45R-AP

STP90NF03L STB90NF03L-1

N-channel 950 V Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET. Order code Marking Package Packaging. STW9NK95Z 9NK95Z TO-247 Tube

STF40NF03L STP40NF03L

STB11NK50Z - STP11NK50ZFP STP11NK50Z

STB80NF55-08T4 STP80NF55-08, STW80NF55-08

STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z

Obsolete Product(s) - Obsolete Product(s)

STV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description

STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

N-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary

Obsolete Product(s) - Obsolete Product(s)

STP70NS04ZC. N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET. Features. Description. Internal schematic diagram.

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

I D. Order codes Marking Package Packaging. STP80NF10 TO-220 Tube STB80NF10T4 D²PAK Tape and reel

STP5NK100Z, STF5NK100Z STW5NK100Z

STW43NM60ND. N-channel 600 V, Ω, 35 A TO-247 FDmesh Power MOSFET (with fast diode) Features. Application. Description

STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N

STB270N4F3 STI270N4F3

N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1

STP10NK80Z, STP10NK80ZFP, STW10NK80Z

STP20NM65N STF20NM65N

N-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging

Features. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N

STS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram

STD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description

STF8NK100Z STP8NK100Z

STP5NK80Z STP5NK80ZFP

STGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.

STP80NF10 STB80NF10 N-CHANNEL 100V Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET

STF20NK50Z, STP20NK50Z

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET

STD16NF06. N-Channel 60V Ω - 16A - DPAK STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

Contents STL13NM60N Contents 1 Electrical ratings Electrical characteristics

Obsolete Product(s) - Obsolete Product(s)

Dual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features

STGD5NB120SZ. 5 A V - low drop internally clamped IGBT. Features. Applications. Description

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND

STS4DNF60L. N-channel 60 V, Ω, 4 A, SO-8 STripFET Power MOSFET. Features. Application. Description

STP8NK80Z - STP8NK80ZFP STW8NK80Z

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V Ω - 4.4A TO-220/FP-D/IPAK-D 2 /I 2 PAK Zener-Protected SuperMESH MOSFET

STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4

STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S

STP60NH2LL. N-channel 24V Ω - 40A TO-220 STripFET Power MOSFET. General features. Description. Internal schematic diagram.

STL60N3LLH5. N-channel 30 V, Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET. Features. Application. Description.

Dual N-channel 30 V, Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET. Order code Marking Package Packaging

STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET

Obsolete Product(s) - Obsolete Product(s)

STF12PF06 P-CHANNEL 60V Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET

N-channel 20 V, Ω typ., 5 A STripFET V Power MOSFET in SOT-23 and SOT23-6L packages. Order codes V DS R DS(on) max I D P TOT 4

STB22NM60N, STF22NM60N, STP22NM60N

STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

N-channel 100 V, Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package 21 A 5 W. Order code Marking Package Packaging

STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET

STN4NF06L. N-channel 60 V, 0.07 Ω, 4 A SOT-223 STripFET II Power MOSFET. Features. Applications. Description

Obsolete Product(s) - Obsolete Product(s)

STD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET

STI260N6F6 STP260N6F6

STP4NK60Z, STP4NK60ZFP

STFW69N65M5 STW69N65M5

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N

STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP

STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z

STGB14NC60K STGD14NC60K

STB55NF06, STP55NF06, STP55NF06FP

N-channel 600 V, Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1

Obsolete Product(s) - Obsolete Product(s)

-55 to 175 C T j ( ) Pulse width limited by safe operating area.

STD7NM60N, STF7NM60N, STU7NM60N

STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET

Transcription:

STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I 2 /D 2 PAK - TO-247 Second generation MDmesh Power MOSFET General features Type 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel Description V DSS (@Tjmax) R DS(on) STB25NM50N 550V <0.140Ω 22A STB25NM50N-1 550V <0.140Ω 22A STF25NM50N 550V <0.140Ω 22A (1) STP25NM50N 550V <0.140Ω 22A STW25NM50N 550V <0.140Ω 22A 1. Limited only by maximum temperature allowed This series of devices is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company s strip layout to yield one of the world s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters I D TO-220FP I²PAK 1 2 3 2 3 1 1 2 3 3 1 TO-220 D²PAK TO-247 Internal schematic diagram Applications Switching application Order codes Part number Marking Package Packaging STB25NM50N B25NM50N D²PAK Tape & reel STB25NM50N-1 B25NM50N-1 I²PAK Tube STF25NM50N F25NM50N TO-220FP Tube STP25NM50N P25NM50N TO-220 Tube STW25NM50N W25NM50N TO-247 Tube January 2007 Rev 12 1/18 www.st.com 18

Contents STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................. 6 3 Test circuit................................................ 9 4 Package mechanical data.................................... 10 5 Packaging mechanical data.................................. 16 6 Revision history........................................... 18 2/18

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter TO-220 - I²PAK D²PAK - TO-247 TO-220FP Unit V DS Drain-source voltage (V GS = 0) 500 V V DGR Drain-gate voltage (R GS = 20 kω) 500 V V GS Gate- source voltage ±25 V I D Drain current (continuous) at T C = 25 C 22 22 (1) A I D Drain current (continuous) at T C = 100 C 14 14 (1) A I (2) DM Drain current (pulsed) 88 88 (1) A P TOT Total dissipation at T C = 25 C 160 40 W V ISO dv/dt (3) Derating factor 1.28 0.32 W/ C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;t C =25 C) -- 2500 V Peak diode recovery voltage slope 15 V/ns T stg Storage temperature 55 to 150 C T j Max. operating junction temperature 150 C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. I SD < 22A, di/dt < 400 A/µs, V DD =80% V (BR)DSS Table 2. Thermal data Value Symbol Parameter TO-220 - I²PAK D²PAK - TO-247 TO-220FP Unit Rthj-case Thermal resistance junction-case Max 0.78 3.1 C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 C/W T l Maximum lead temperature for soldering purpose 300 C Table 3. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25 C, Id=Ias, Vdd=50V) 10 A 350 mj 3/18

Electrical characteristics STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS dv/dt (1) I DSS Drain-source breakdown voltage I D = 1mA, V GS = 0 500 V Drain source voltage slope Vdd=400V, Id=25A, Vgs=10V 44 V/ns Zero gate voltage drain current (V GS = 0) V DS = Max rating V DS = Max rating, @125 C I GSS Gate-body leakage current (V DS = 0) V GS = ± 20V 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250µA 2 3 4 V R DS(on) Static drain-source on resistance V GS = 10V, I D = 11A 0.110 0.140 Ω 1. Characteristic value at turn off on inductive load 1 10 µa µa Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) fs C iss C oss C rss Forward transconductance V DS =15V, I D =11A 19 S Input capacitance Output capacitance Reverse transfer capacitance V DS = 25V, f = 1MHz, V GS = 0 2565 511 77 pf pf pf (2) C oss eq. Q g Q gs Q gd R g Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance V GS = 0V, V DS = 0V to 400V 315 pf V DD = 400V, I D =22A, V GS = 10V, (see Figure 18) f=1mhz Gate DC Bias=0 Test signal level=20mv open drain 84 11 35 nc nc nc 1.6 Ω 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DS 4/18

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off delay time Fall time V DD =250V, I D = 11A R G =4.7Ω V GS = 10V (see Figure 17) 23 23 75 22 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Source-drain current Source-drain current (pulsed) Forward on voltage I SD = 22A, V GS = 0 1.3 V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 22A, di/dt = 100A/µs V DD = 100V, T j = 25 C (see Figure 22) I SD = 22A, di/dt = 100A/µs V DD = 100V, T j = 150 C (see Figure 22) 460 6.9 30 532 8.25 31 22 88 A A ns µc A ns µc A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/18

Electrical characteristics STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 / D²PAK / I²PAK Figure 2. Thermal impedance for TO-220 / D²PAK / I²PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 6/18

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Electrical characteristics Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/18

Electrical characteristics STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Figure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized B VDSS vs temperature 8/18

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Test circuit 3 Test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped Inductive load test circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/18

Package mechanical data STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:www.st.com 10/18

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Package mechanical data TO-220 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øp 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/18

3 Package mechanical data STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N D 2 PAK MECHANICAL DATA TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 1 12/18

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Package mechanical data TO-262 (I 2 PAK) MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 13/18

Package mechanical data STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N TO-220FP MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6.0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 H G B D A E L6 L7 L3 G1 F1 F L2 L5 F2 L4 1 2 3 14/18

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Package mechanical data TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.45 0.214 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 øp 3.55 3.65 0.140 0.143 ør 4.50 5.50 0.177 0.216 S 5.50 0.216 15/18

Packaging mechanical data STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type BASE QTY BULK QTY 1000 1000 16/18

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Revision history 6 Revision history Table 8. Revision history Date Revision Changes 30-Nov-2004 1 First release. 08-Mar-2005 2 Inserted curves 22-Mar-2005 3 Modified title 13-Apr-2005 4 Modified some values 28-Apr-2005 5 Modified some values on Table 7 16-May-2005 6 Modified values on Table 6 17-Jun-2005 7 Inserted new row on Table 5 07-Sep-2005 8 Inserted ecopack indication 05-Oct-2005 9 Modified curves Figure 7, Figure 8 09-Nov-2005 10 Modified Figure 10 14-Nov-2006 11 New template, new value on Absolute maximum ratings 19-Jan-2007 12 Typo mistake on Table 6 17/18

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18