Revision: Rev

Improving Immunity of BGA825SL6 against Out-Of-Band Jammer for LTE Band-13 Application Note AN34 Revision: Rev. 1. RF and Protection Devices

Edition 212-12-1 Published by Infineon Technologies AG 81726 Munich, Germany 212 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Improving Immunity of BGA825SL6 against Out-Of-Band Jammer for Application Note AN34 Revision History: Previous Revision: None Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 211-11-11 Application Note AN34, Rev. 1. 3 / 34

Improving Immunity of BGA825SL6 against Out-Of-Band Jammer for Table of Content Table of Content, List of Figures and Tables 1 SiGe Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)... 7 2 Introduction... 8 3 Application circuits for improved rejection out-of-band jammers (LTE-Band-13)... 1 4 Typical Measurement Results... 12 5 Measured Graphs for GPS and GLONASS bands... 16 6 Evaluation Board... 32 7 Authors... 33 Application Note AN34, Rev. 1. 4 / 34

Improving Immunity of BGA825SL6 against Out-Of-Band Jammer for List of Figures Table of Content, List of Figures and Tables Figure 1 BGA825L6S in TSLP-6-3 Package (.9mm x 1.1mm x.4mm)... 7 Figure 2 Block diagram of the BGA825L6S for GNSS band 1559-1615MHz applications... 9 Figure 3 BGA825L6S application circuit 1 including SAW filter matching inductor and Parallel Notch... 1 Figure 4 BGA825L6S application circuit 2 including SAW filter and shunt Notch... 11 Figure 5 Power gain of BGA825L6S for GPS and GLONASS bands... 16 Figure 6 Narrowband power gain of BGA825L6S for GPS and GLONASS bands... 16 Figure 7 Input matching of BGA825L6S for GPS and GLONASS bands... 17 Figure 8 Output matching of BGA825L6S for GPS and GLONASS bands... 17 Figure 9 Reverse isolation of BGA825L6S for GPS and GLONASS bands... 18 Figure 1 Figure 11 Input 1 db compression point of BGA825L6S at supply voltage of 1.8V GPS and GLONASS bands18 Input 1 db compression point of BGA825L6S at supply voltage of 2.8V forgps and GLONASS bands... 19 Figure 12 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=1.8V... 19 Figure 13 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=2.8V... 2 Figure 14 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=1.8V... 2 Figure 15 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=2.8V... 21 Figure 16 Input and output matching for GPS and GLONASS bands with Vcc=1.8V... 21 Figure 17 Input and output matching for GPS and GLONASS bands with Vcc=2.8V... 22 Figure 18 Stability factor µ1 of BGA825L6S upto 1GHz... 22 Figure 19 Stability factor µ2 of BGA825L6S upto 1GHz... 23 Figure 2 Stability factor k of BGA825L6S upto 1GHz... 23 Figure 21 Power gain of BGA825L6S for GPS and GLONASS bands... 24 Figure 22 Narrowband power gain of BGA825L6S for GPS and GLONASS bands... 24 Figure 23 Input matching of BGA825L6S for GPS and GLONASS bands... 25 Figure 24 Output matching of BGA825L6S for GPS and GLONASS bands... 25 Figure 25 Reverse isolation of BGA825L6S for GPS and GLONASS bands... 26 Figure 26 Figure 27 Input 1 db compression point of BGA825L6S at supply voltage of 1.8V GPS and GLONASS bands26 Input 1 db compression point of BGA825L6S at supply voltage of 2.8V for GPS and GLONASS bands... 27 Figure 28 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=1.8V... 27 Figure 29 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=2.8V... 28 Figure 3 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=1.8V... 28 Figure 31 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=2.8V... 29 Figure 32 Input and output matching for GPS and GLONASS bands with Vcc=1.8V... 29 Figure 33 Input and output matching for GPS and GLONASS bands with Vcc=2.8V... 3 Figure 34 Stability factor µ1 of BGA825L6S upto 1GHz... 3 Figure 35 Stability factor µ2 of BGA825L6S upto 1GHz... 31 Figure 36 Stability factor k of BGA825L6S upto 1GHz... 31 Figure 37 Populated PCB picture of BGA825L6S application circuit 1... 32 Figure 38 Populated PCB picture of BGA825L6S application circuit 2... 32 Figure 39 PCB layer stack... 32 Application Note AN34, Rev. 1. 5 / 34

Improving Immunity of BGA825SL6 against Out-Of-Band Jammer for List of Tables Table of Content, List of Figures and Tables Table 1 Pin Definition... 9 Table 2 Switching Mode... 9 Table 3 Bill-of-Materials application circuit 1... 1 Table 4 Bill-of-Materials application circuit 2... 11 Table 5 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V... 12 Table 6 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V... 13 Table 7 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V... 14 Table 8 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V... 15 Application Note AN34, Rev. 1. 6 / 34

SiGe Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) 1 SiGe Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) 1.1 Features High insertion power gain: 17. db Out-of-band input 3 rd -order intercept point: +8 dbm Input 1dB compression point: -7 dbm Low noise figure:.6 db Low current consumption: 4.8 ma Operating frequency: 155-1615 MHz Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Small TSLP-6-3 leadless package (footprint:.9 x 1.1 mm 2 ) B7HF Silicon Germanium technology RF output internally matched to 5 Ω Only one external SMD component necessary 2 kv HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package Figure 1 BGA825L6S in TSLP-6-3 Package (.9mm x 1.1mm x.4mm) 1.2 Applications - GPS (Global Positioning System) working in the L1 band at 1575.42 MHz - GLONASS (Russian GNSS) working in the L1 band from 1598.6 MHz to 165.38 MHz Application Note AN34, Rev. 1. 7 / 34

Introduction 2 Introduction The BGA825L6S is a front-end Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS) application. It is based on Infineon Technologies B7HF Silicon-Germanium (SiGe) technology, enabling a cost-effective solution in a ultra small TSLP-6-3 package with ultra low noise figure, high gain, high linearity and low current consumption over a wide range of supply voltages from 3.6 V down to 1.5 V. All these features make BGA825L6S an excellent choice for GNSS LNA as it improves sensitivity, provide greater immunity against out-of-band jammer signals, reduces filtering requirement and hence the overall cost of the GNSS receiver. This application note addresses the issue of out-of-band jammers and improving the immunity of BGA825L6S against the jammers. The out-of-band signal considered is LTE Band-13, as the intermodulation product fall into GPS band. The ever growing demand to integrate more and more functionality into one device leads to many challenges when transmitter/receiver has to work simultaneously without degrading the performance of each other. In today s smart-phones a GNSS receiver simultaneously co-exists with transceivers in the GSM/EDGE/UMTS/LTE bands. These 3G/4G transceivers transmit high power in the range of +24 dbm which due to insufficient isolation couple to the GNSS receiver. The cellular signals can mix to produce Intermodulation products exactly in the GNSS receiver frequency band. For example, GSM 1712.7 MHz mixes with UMTS 185 MHz to produce thirdorder-product exactly at GPS, 2nd harmonic falls into GPS band, GSM 827/897 MHz mixes with WLAN 242/2472 MHz to produce second-order-product at GPS. The jamming resistance of BGA825L6S against these jammers is improved by increasing the attenuation of the circuit at these specific out-of-band frequencies of band-13 (787MHz). This is achieved by using external SMDs and a SAW filter before BGA825L6S. In some applications where more rejection is required at special frequencies and SAW filter alone cannot provide sufficient attenuation, some external notches can be designed for those frequencies. Figure 3 and figure 4 showing such an application circuit where notches have been designed to attenuate 787MHz (parallel and shunt notch configuration). The component values are fine tuned so as to have optimal noise figure, jammer rejection, gain and input matching. Application Note AN34, Rev. 1. 8 / 34

Introduction The Internal circuit diagram of the BGA825L6S is presented in Figure 2. Table 1 show the pin assignment of BGA825L6S. Table 2 shows the truth table to turn on/off BGA825L6S by applying different voltage to the PON pin. Figure 2 Block diagram of the BGA825L6S for GNSS band 1559-1615MHz applications Table 1 Pin Definition Pin Symbol Comment 1 GND General ground 2 VCC DC supply 3 AO LNA output 4 GNDRF LNA RF ground 5 AI LNA input 6 PON Power on control Table 2 LNA Mode Switching Mode Symbol ON/OFF Control Voltage at PON pin ON PON, on 1. V VCC OFF PON, off V.4 V Min Max Application Note AN34, Rev. 1. 9 / 34

Application circuits for improved rejection out-of-band jammers (LTE-Band-13) 3 Application circuits for improved rejection out-of-band jammers (LTE-Band-13) 3.1 Schematic Diagrams RFin L1 N2 SAW SFHG89DA2 L3 N1 BGA825L6S GNDRF, 4 AO, 3 AI, 5 VCC, 2 Vcc RFout C1 L2 Pon PON, 6 GND, 1 C2 Figure 3 BGA825L6S application circuit 1 including SAW filter matching inductor and Parallel Notch Table 3 Bill-of-Materials application circuit 1 Symbol Value Unit Package Manufacturer Comment L1 12 nh 315 LQW4A/Murata Band- 13 notch C1 3.3 pf 21 Various Band- 13 notch L2 5.6 nh 315 LQW4A/Murata Input matching L3 7.5 nh 315 LQW4A/Murata matching C2 1 nf 21 Various RF bypass N1 BGA825L6S TSLP-6-3 Infineon SiGe:C LNA N2 SFHG89DAA2 WISOL SAW Filter Application Note AN34, Rev. 1. 1 / 34

N2 SAW SFHG89DA2 N1 BGA825L6S GNDRF, 4 AO, 3 RFout RFin L2 Vcc AI, 5 VCC, 2 C1 L1 Pon PON, 6 GND, 1 C2 Figure 4 BGA825L6S application circuit 2 including SAW filter and shunt Notch Table 4 Bill-of-Materials application circuit 2 Symbol Value Unit Package Manufacturer Comment L1 12 nh 315 LQW4A/Murata Band- 13 notch C2 3.3 pf 21 Various Band- 13 notch L2 7.5 nh 315 LQW4A/Murata Input matching C1 1 nf 21 Various RF bypass N1 BGA825L6S TSLP-6-3 Infineon SiGe:C LNA N2 SFHG89DAA2 WISOL SAW Filter Application Note AN34, Rev. 1. 11 / 34

Typical Measurement Results 4 Typical Measurement Results 4.1 Typical Measurement Results of application circuit 1 Table 5 and Table 6 show typical measurement results of the application circuit shown in Figure 3. The values given in this table include losses of the board and the SMA connectors if not otherwise stated. Table 5 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 1.8 V DC Current Icc 5.2 ma Navigation System Frequency Range Sys GPS GLONASS Freq 1575.42 1598-166 MHz Gain G 15.5 15 db Noise Figure NF 1.75 1.74 db Input Return Loss RLin -12.5-12.8 db PCB and SMA losses of.1db substracted Output Return Loss Reverse Isolation RLout -13.6-2 db IRev -24.1-24.2 db Input P1dB IP1dB -6.6-6 dbm Output P1dB OP1dB 7.9 8 dbm f gps = 1575.42 MHz f GLONASS = 165.38 MHz Input IP3 In-band Output IP3 In-band LTE band-13 2 nd Harmonic Input IP3 out-of-band IIP3 -.75 -.35 dbm OIP3 14.75 14.65 dbm H2-88.1 dbm IIP3 OOB 42.9 dbm f 1gps = 1575 MHz f 2gps = 1576MHz f 1GLONASS =162 MHz f 2GLONASS =163 MHz Input power= -3dBm f IN = 787.76 MHz P IN = +15 dbm f H2 = 1575.52 MHz f 1 = 1712.7 MHz f 2 = 185 MHz Input power = +1dBm f IIP3 = Stability k >1 -- Unconditionnally Stable Application Note AN34, Rev. 1. 12 / 34

Typical Measurement Results Table 6 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 V DC Current Icc 5.2 ma Navigation System Frequency Range Sys GPS GLONASS Freq 1575.42 1598-166 MHz Gain G 15.8 15.3 db Noise Figure NF 1.74 1.75 db PCB and SMA losses of.1db substracted Input Return Loss Output Return Loss Reverse Isolation RLin -11.5-12.6 db RLout -12.5-18.2 db IRev -24.1-24.2 db Input P1dB IP1dB -4.3-4.4 dbm Output P1dB OP1dB 1.5 9.9 dbm Input IP3 In-band Output IP3 In-band LTE band-13 2 nd Harmonic Input IP3 out-of-band IIP3-1.1 -.45 dbm OIP3 14.7 14.85 dbm H2-88.1 dbm IIP3 OOB 45.5 dbm Stability k >1 -- f gps = 1575.42 MHz f GLONASS = 165.38 MHz f 1gps = 1575 MHz f 2gps = 1576MHz f 1GLONASS =162 MHz f 2GLONASS =163 MHz Input power= -3dBm f IN = 787.76 MHz P IN = +15 dbm f H2 = 1575.52 MHz f 1 = 1712.7 MHz f 2 = 185 MHz Input power = +1dBm f IIP3 = Unconditionnally Stable from to 1GHz Application Note AN34, Rev. 1. 13 / 34

Typical Measurement Results 4.2 Typical Measurement Results of application circuit 2 Table 5 and Table 6 show typical measurement results of the application circuit shown in Figure 3. The values given in this table include losses of the board and the SMA connectors if not otherwise stated. Table 7 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 1.8 V DC Current Icc 5.2 ma Navigation System Frequency Range Sys GPS GLONASS Freq 1575.42 1598-166 MHz Gain G 15.8 14.3 db Noise Figure NF 1.66 1.73 db Input Return Loss RLin -24.9-6.9 db PCB and SMA losses of.1db substracted Output Return Loss Reverse Isolation RLout -17-18.8 db IRev -23.6-24.9 db Input P1dB IP1dB -7.2-7.6 dbm Output P1dB OP1dB 23 21.9 dbm Input IP3 In-band Output IP3 In-band LTE band-13 2 nd Harmonic Input IP3 out-of-band IIP3 -.8-1.3 dbm OIP3 15 13 dbm H2-92.1 dbm IIP3 OOB 45.4 dbm Stability k >1 -- f gps = 1575.42 MHz f GLONASS = 165.38 MHz f 1gps = 1575 MHz f 2gps = 1576MHz f 1GLONASS =162 MHz f 2GLONASS =163 MHz Input power= -3dBm f IN = 787.76 MHz P IN = +15 dbm f H2 = 1575.52 MHz f 1 = 1712.7 MHz f 2 = 185 MHz Input power = +1dBm f IIP3 = Unconditionnally Stable from to 1GHz Application Note AN34, Rev. 1. 14 / 34

Table 8 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 V DC Current Icc 5.2 ma Navigation System Frequency Range Sys GPS GLONASS Freq 1575.42 1598-166 MHz Gain G 15.9 14.4 db Noise Figure NF 1.65 1.75 db PCB and SMA losses of.1db substracted Input Return Loss Output Return Loss Reverse Isolation RLin -25.7-6.8 db RLout -18.5-2.7 db IRev -24-25.3 db Input P1dB IP1dB -5.3-4.4 dbm Output P1dB OP1dB 9.6 9 dbm Input IP3 In-band Output IP3 In-band LTE band-13 2 nd Harmonic Input IP3 out-of-band IIP3-1.5 -.8 dbm OIP3 14.85 13.6 dbm H2-92.4 dbm IIP3 OOB 47.1 dbm Stability k >1 -- f gps = 1575.42 MHz f GLONASS = 165.38 MHz f 1gps = 1575 MHz f 2gps = 1576MHz f 1GLONASS =162 MHz f 2GLONASS =163 MHz Input power= -3dBm f IN = 787.76 MHz P IN = +15 dbm f H2 = 1575.52 MHz f 1 = 1712.7 MHz f 2 = 185 MHz Input power = +1dBm f IIP3 = Unconditionnally Stable from to 1GHz Application Note AN34, Rev. 1. 15 / 34

S21 (db) S21 (db) BGA825L6S Measured Graphs for GPS and GLONASS bands 5 Measured Graphs for GPS and GLONASS bands 5.1 Measured Graphs for application circuit 1 2 1 Gain 15.5 db 165.4 MHz 15 db Gain at Vcc=1.8V Gain at Vcc=2.8V -1 15.8 db 165.4 MHz 15.3 db -2-3 -4-5 -6-7 5 1 15 2 25 3 35 4 45 5 55 6 Figure 5 Power gain of BGA825L6S for GPS and GLONASS bands 18 Narrowband gain 17.5 17 16.5 16 15.5 15 14.5 14 13.5 15.8 db 15.5 db 165.4 MHz 15.3 db Gain at Vcc=1.8V Gain at Vcc=2.8V 165.4 MHz 15 db 13 15 1525 155 1575 16 1625 165 Figure 6 Narrowband power gain of BGA825L6S for GPS and GLONASS bands Application Note AN34, Rev. 1. 16 / 34

S22 (db) S11 (db) BGA825L6S Measured Graphs for GPS and GLONASS bands -5 Input matching S11 at Vcc=1.8V S11 at Vcc=2.8V -1-11.5 db 165.4 MHz -12.6 db -15-12.2 db 165.4 MHz -12.8 db -2-25 15 1525 155 1575 16 1625 165 Figure 7 Input matching of BGA825L6S for GPS and GLONASS bands -5-1 -15 Output matching -12.5 db 165.4 MHz -18.2 db -2-25 -13.6 db -3-35 165.4 MHz -2 db -4-45 S22 at Vcc=1.8V S22 at Vcc=2.8V -5 15 1525 155 1575 16 1625 165 Figure 8 Output matching of BGA825L6S for GPS and GLONASS bands Application Note AN34, Rev. 1. 17 / 34

Gain (db) S12 (db) BGA825L6S Measured Graphs for GPS and GLONASS bands -17 Isolation S12 at Vcc=1.8V S12 at Vcc=2.8V -19-21 -23-24.1 db -24.4 db 165.4 MHz -24.2 db 165.4 MHz -24.6 db -25-27 15 1525 155 1575 16 1625 165 Figure 9 Reverse isolation of BGA825L6S for GPS and GLONASS bands 18 Compression point at 1dB with Vcc=1.8V 17 16-27 15.7-6.62 14.7 15 14 13-27 15.2 P1dB at Vcc=1.8V GPS (1575.42MHz) P1dB at Vcc=1.8V GLONASS (165MHz) -6.7 14.2 12 11 1-27 -22-17 -12-7 -2 Figure 1 Input 1 db compression point of BGA825L6S at supply voltage of 1.8V GPS and GLONASS bands Application Note AN34, Rev. 1. 18 / 34

Power (dbm) Gain (db) BGA825L6S Measured Graphs for GPS and GLONASS bands 18 Compression point at 1dB with Vcc=2.8V 17 16-27 15.9-4.29 14.9 15-27 15.4 14 13 P1dB at Vcc=2.8V GPS (1575.42MHz) P1dB at Vcc=2.8V GLONASS (165MHz) -4.36 14.4 12 11 1-27 -22-17 -12-7 -2 Figure 11 Input 1 db compression point of BGA825L6S at supply voltage of 2.8V forgps and GLONASS bands Intermodulation for GPS Band at Vcc = 1.8V -2 1575 MHz -13.71 db 1576 MHz -14 db -4-6 1574 MHz -72.1 db 1577 MHz -71.24 db -8-1 1573.5 1574.5 1575.5 1576.5 1577.5 Figure 12 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=1.8V Application Note AN34, Rev. 1. 19 / 34

Power (dbm) Power (dbm) BGA825L6S Measured Graphs for GPS and GLONASS bands Intermodulation for GPS Band at Vcc = 2.8V 1575 MHz -13.71 db 1576 MHz -14.2 db -2-4 -6 1574 MHz -72.5 db 1577 MHz -71.21 db -8-1 1573.5 1574.5 1575.5 1576.5 1577.5 Figure 13 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=2.8V Intermodulation for GLONASS Band at Vcc = 1.8V 162 MHz -14.22 db 163 MHz -14.49 db -2-4 -6 161 MHz -71.87 db 164 MHz -71.46 db -8-1 16.5 161.5 162.5 163.5 164.5 Figure 14 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=1.8V Application Note AN34, Rev. 1. 2 / 34

-1..2.4.6.8 2. 3. 4. 5. 1. Power (dbm) BGA825L6S Measured Graphs for GPS and GLONASS bands Intermodulation for GLONASS Band at Vcc = 2.8V 162 MHz -14.2 db 163 MHz -14.4 db -2-4 -6 161 MHz -72.17 db 164 MHz -71.76 db -8-1 16.5 161.5 162.5 163.5 164.5 Figure 15 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=2.8V Input Output Input and Output matching with Vcc=1.8V.6.8 1. 1. 2. Swp Max 1615MHz.4 3..2 -.2 1555 MHz r.711 x -.28 165 MHz r.955 x -.239 165 MHz r.798 x.373 1575 MHz r 1.1 x -.555 4. 5. 1. -1. -5. -4. -.4-3. -2. -.6 -.8 Swp Min 155MHz Figure 16 Input and output matching for GPS and GLONASS bands with Vcc=1.8V Application Note AN34, Rev. 1. 21 / 34

-1..2.4.6.8 2. 3. 4. 5. 1. BGA825L6S Measured Graphs for GPS and GLONASS bands Input Output Input and Output matching with Vcc=2.8V.6.8 2. Swp Max 1615MHz.2.4 1. 1. 165.4 MHz r.773 x.335 3. 4. 5. 1. -.2 -.4 165.4 MHz r.986 x -.199 r.932 x -.48 r 1.3 x -.514-3. -1. -5. -4. -2. -.6 -.8 Swp Min 155MHz Figure 17 Input and output matching for GPS and GLONASS bands with Vcc=2.8V 2 Stability Mu1 factor Stability Mu1 factor at Vcc=1.8V Stability Mu1 factor at Vcc=2.8V 1.5 1.5 1 2 3 4 5 6 7 8 9 1 Figure 18 Stability factor µ1 of BGA825L6S upto 1GHz Application Note AN34, Rev. 1. 22 / 34

Measured Graphs for GPS and GLONASS bands 2 Stability Mu2 factor 1.5 1.5 Stability Mu2 factor at Vcc=1.8V Stability Mu2 factor at Vcc=2.8V 1 11 21 31 41 51 61 71 81 91 1 Figure 19 Stability factor µ2 of BGA825L6S upto 1GHz 5 4 Stability K factor Stability K factor at Vcc=1.8V Stability K factor at Vcc=2.8V 3 2 1 1 2 3 4 5 6 7 8 9 1 Figure 2 Stability factor k of BGA825L6S upto 1GHz Application Note AN34, Rev. 1. 23 / 34

S21 (db) S21 (db) BGA825L6S Measured Graphs for GPS and GLONASS bands 5.2 Measured Graphs for application circuit 2 2 1-1 Gain 15.8 db 165.4 MHz 14.3 db 15.9 db 165.4 MHz 14.4 db Gain at Vcc=1.8V Gain at Vcc=2.8V -2-3 -4-5 -6-7 5 1 15 2 25 3 35 4 45 5 55 6 Figure 21 Power gain of BGA825L6S for GPS and GLONASS bands 18 17.5 17 16.5 16 15.5 15 14.5 14 13.5 Narrowband gain 15.9 db 15.8 db Gain at Vcc=1.8V Gain at Vcc=2.8V 165.4 MHz 14.4 db 165.4 MHz 14.3 db 13 15 1525 155 1575 16 1625 165 Figure 22 Narrowband power gain of BGA825L6S for GPS and GLONASS bands Application Note AN34, Rev. 1. 24 / 34

S22 (db) S11 (db) BGA825L6S Measured Graphs for GPS and GLONASS bands Input matching 165.4 MHz -6.8 db -5-1 -24.9 db -15-2 165.4 MHz -6.9 db -25-3 -25.7 db S11 at Vcc=1.8V S11 at Vcc=2.8V -35 15 1525 155 1575 16 1625 165 Figure 23 Input matching of BGA825L6S for GPS and GLONASS bands -5-1 -15 Output matching -17 db 165.4 MHz -18.8 db -2-25 -3-35 -18.5 db 165.4 MHz -2.7 db -4-45 S22 at Vcc=1.8V S22 at Vcc=2.8V -5 15 1525 155 1575 16 1625 165 Figure 24 Output matching of BGA825L6S for GPS and GLONASS bands Application Note AN34, Rev. 1. 25 / 34

Gain (db) S12 (db) BGA825L6S Measured Graphs for GPS and GLONASS bands -17 Isolation S12 at Vcc=1.8V S12 at Vcc=2.8V -19-21 -23.6 db -24 db 165.4 MHz -24.9 db -23 165.4 MHz -25.3 db -25-27 15 1525 155 1575 16 1625 165 Figure 25 Reverse isolation of BGA825L6S for GPS and GLONASS bands 18 Compression point at 1dB with Vcc=1.8V 17 16-27 16-7.17 15 15 14-27 14.6 P1dB at Vcc=1.8V GPS (1575.42MHz) 13 P1dB at Vcc=1.8V GLONASS (165MHz) -5.97 13.6 12 11 1-27 -22-17 -12-7 -2 Figure 26 Input 1 db compression point of BGA825L6S at supply voltage of 1.8V GPS and GLONASS bands Application Note AN34, Rev. 1. 26 / 34

Power (dbm) Gain (db) BGA825L6S Measured Graphs for GPS and GLONASS bands 18 Compression point at 1dB with Vcc=2.8V 17 16-27 16.2-5.28 15.2 15 14 13-27 14.8 P1dB at Vcc=2.8V GPS (1575.42MHz) P1dB at Vcc=2.8V GLONASS (165MHz) -4.36 13.8 12 11 1-27 -22-17 -12-7 -2 Figure 27 Input 1 db compression point of BGA825L6S at supply voltage of 2.8V for GPS and GLONASS bands Intermodulation for GPS Band at Vcc = 1.8V 1575 MHz -13.51 db 1576 MHz -14.3 db -2-4 -6 1574 MHz -73.71 db 1577 MHz -71.44 db -8-1 1573.5 1574.5 1575.5 1576.5 1577.5 Figure 28 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=1.8V Application Note AN34, Rev. 1. 27 / 34

Power (dbm) Power (dbm) BGA825L6S Measured Graphs for GPS and GLONASS bands Intermodulation for GPS Band at Vcc = 2.8V 1575 MHz -13.81 db 1576 MHz -14 db -2-4 -6 1574 MHz -73.1 db 1577 MHz -71.31 db -8-1 1573.5 1574.5 1575.5 1576.5 1577.5 Figure 29 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=2.8V Intermodulation for GLONASS Band at Vcc = 1.8V 162 MHz -14.54 db 163 MHz -15.24 db -2-4 -6 161 MHz -72.27 db 164 MHz -7.12 db -8-1 16.5 161.5 162.5 163.5 164.5 Figure 3 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=1.8V Application Note AN34, Rev. 1. 28 / 34

-1..2.4.6.8 2. 3. 4. 5. 1. Power (dbm) BGA825L6S Measured Graphs for GPS and GLONASS bands Intermodulation for GLONASS Band at Vcc = 2.8V 162 MHz -14.82 db 163 MHz -15 db -2-4 -6 161 MHz -71.9 db 164 MHz -71.76 db -8-1 16.5 161.5 162.5 163.5 164.5 Figure 31 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=2.8V Input Output Input and Output matching with Vcc=1.8V.6.8 1. 1. Swp Max 1615MHz 2..2.4 165 MHz r.822 x -.11 1555 MHz r.692 x -.229 1575 MHz r 1.2 x -.111 3. 4. 5. 165 MHz r 1.77 x 1.12 1. -1. -.2-5. -4. -.4-3. -2. -.6 -.8 Swp Min 155MHz Figure 32 Input and output matching for GPS and GLONASS bands with Vcc=1.8V Application Note AN34, Rev. 1. 29 / 34

-1..2.4.6.8 2. 3. 4. 5. 1. BGA825L6S Measured Graphs for GPS and GLONASS bands Input Output Input and Output matching with Vcc=2.8V.6.8 1. 1. 2. Swp Max 1615MHz.4 165.4 MHz r 1.78 x 1.9 3. 4. 5..2 1. r 1.4 x -.969 -.2 165.4 MHz r.848 x -.771 r 1.8 x -.235-1. -5. -4. -.4-3. -2. -.6 -.8 Swp Min 155MHz Figure 33 Input and output matching for GPS and GLONASS bands with Vcc=2.8V 2 Stability Mu1 factor Stability Mu1 factor at Vcc=1.8V Stability Mu1 factor at Vcc=2.8V 1.5 1.5 1 2 3 4 5 6 7 8 9 1 Figure 34 Stability factor µ1 of BGA825L6S upto 1GHz Application Note AN34, Rev. 1. 3 / 34

Measured Graphs for GPS and GLONASS bands 2 Stability Mu2 factor 1.5 1.5 Stability Mu2 factor at Vcc=1.8V Stability Mu2 factor at Vcc=2.8V 1 11 21 31 41 51 61 71 81 91 1 Figure 35 Stability factor µ2 of BGA825L6S upto 1GHz 5 4 Stability K factor Stability K factor at Vcc=1.8V Stability K factor at Vcc=2.8V 3 2 1 1 2 3 4 5 6 7 8 9 1 Figure 36 Stability factor k of BGA825L6S upto 1GHz Application Note AN34, Rev. 1. 31 / 34

Evaluation Board 6 Evaluation Board Figure 37 Populated PCB picture of BGA825L6S application circuit 1 Figure 38 Populated PCB picture of BGA825L6S application circuit 2 Vias RO43,.2mm Copper 35µm FR4,.8mm Figure 39 PCB layer stack Application Note AN34, Rev. 1. 32 / 34

Authors 7 Authors André Dewai, Application Engineer of Business Unit RF and Protection Devices. Dr. Chih-I Lin, Senior Staff Engineer of Business Unit RF and Protection Devices. Application Note AN34, Rev. 1. 33 / 34

w w w. i n f i n e o n. c o m Published by Infineon Technologies AG AN34