Product Description Qorvo s TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo s QGaN15 0.15 µm GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214- CP generates > 4 W saturated output power with a poweradded efficiency of > 15 %, and > 14 db large signal gain across the entire operational band. The TGA2214-CP is offered in a 10-lead 15 x 15 mm boltdown package. The package has a pure Cu base, offering superior thermal management. The TGA2214-CP is ideally suited to support, both in the commercial and the defense arenas, applications requiring either wideband or multiband frequency performance. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Lead free and RoHS compliant. Evaluation Boards are available upon request. Functional Block Diagram Product Features Frequency Range: 2 18 GHz POUT: > 36 dbm at PIN = 23 dbm PAE: > 15 % CW at PIN = 23 dbm Small Signal Gain: > 22 db IM3: < 17 dbc at 30 dbm POUT / Tone Bias: VD = +22 V, IDQ = 600 ma, VG = 2.3 V Typical Package Dimensions: 15.2 x 15.2 x 3.5 mm Package base is pure Cu offering superior thermal management 1 2 3 4 5 10 9 8 7 6 Applications Test Equipment Electronic Warfare Military and Commercial Radar Ordering Information Part No. ECCN Description TGA2214-CP 3A001.b.2.c 2 18 GHz 4 W GaN Power Amplifier Data Sheet Rev. C, January 19, 2017-1 of 12 - www.qorvo.com
Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) +29.5 V Gate Voltage Range (VG) 5 to 0 V Drain Current (ID) 1 st stage 2 nd stage 0.5 A 1.0 A Forward Gate Current (IG) See graph this page Power Dissipation (PDISS), 31 W Input Power, CW, 50 Ω, (PIN) 31 dbm Input Power, CW, VSWR 3:1, VD = +30 V,, (PIN) 31 dbm Channel Temperature (TCH) 275 C Mounting Temperature (30 Seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Parameter Drain Voltage (VD) Drain Current (IDQ) Drain Current Under RF Drive (ID_DRIVE) Gate Voltage (VG) Gate Current Under RF Drive (IG_DRIVE) Value / Range +22 V 600 ma See plots p. 7 2.3 V (Typ.) See plots p. 7 Temperature (TBASE) 40 to Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2 18 GHz Small Signal Gain > 22 db Input Return Loss > 8 db Output Return Loss > 11 db Output Power at PIN = 23 dbm > 36 dbm Power Added Efficiency at PIN = 23 dbm > 15 % IM3 ( POUT / Tone = 30 dbm/tone) < 17 dbc IM5 ( POUT / Tone = 30 dbm/tone) < 29 dbc Small Signal Gain Temperature Coefficient -0.04 db/ C Output Power Temperature Coefficient (25 to ) 0.005 dbm/ C Recommended Operating Voltage +22 +22 V Test conditions unless otherwise noted:, VD = +22 V, IDQ = 600 ma, VG = 2.3 V Typ, CW. Data Sheet Rev. C, January 19, 2017-2 of 12 - www.qorvo.com
Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) TBASE =, VD = +22 V (CW) 6.2 C/W Channel Temperature (TCH) (Under RF drive) At Freq =, PIN = 23 dbm: IDQ = 600 ma, ID_Drive = 1.3 A 232 C Median Lifetime (TM) POUT = 37 dbm, PDISS = 23.6 W 4.4E+6 Hrs Notes: 1. Thermal resistance measured to back of package. Median Lifetime Test Conditions: VD = +28 V; Failure Criteria = 10 % reduction in ID_MAX 28 Dissipated Power vs. Frequency vs. Temp. 26 P DISS (W) 24 22 20 18 16 14 12, CW Data Sheet Rev. C, January 19, 2017-3 of 12 - www.qorvo.com
Performance Plots Small Signal Conditions unless otherwise specified: VD = +22 V, IDQ = 600 ma, VG = 2.3 V Typical, CW. TGA2214-CP 32 Gain vs. Frequency vs. Temperature 30 Gain vs. Frequency vs. Drain Current 30 28 28 26 S21 (db) 26 24 22 20 S21 (db) 24 22 20 450 ma 600 ma 18 1 3 5 7 9 11 13 15 17 19 18 1 3 5 7 9 11 13 15 17 19 30 Gain vs. Frequency vs. Temperature 0 Return Loss vs. Frequency vs. Temp. S21 (db) 10 S11 & S22 (db) -5-15 S22 S11-50 -25-70 1 6 11 16 21 26 31 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 0 Input Return Loss vs. Frequency vs. Temp. 0 Output Return Loss vs. Frequency vs. Temp. -5-5 S11 (db) -15-25 S22 (db) -15-25 1 3 5 7 9 11 13 15 17 19 1 3 5 7 9 11 13 15 17 19 Data Sheet Rev. C, January 19, 2017-4 of 12 - www.qorvo.com
Performance Plots Large Signal Conditions unless otherwise specified: VD = +22 V, IDQ = 600 ma, VG = 2.3 V Typical, CW. TGA2214-CP 40 39 Output Power vs. Input Power vs. Temp. Frequency = 40 39 Output Power vs. Input Power vs. Freq. Temp = Output Power (dbm) 38 37 36 35 34 33 Output Power (dbm) 38 37 36 35 34 33 32 18 20 22 24 26 28 Input Power (dbm) 32 18 20 22 24 26 28 Input Power (dbm) 40 Output Power vs. Frequency vs. Temp. 40 Output Power vs. Freq. vs. Drain Current 39 39 Output Power (dbm) 38 37 36 35 Output Power (dbm) 38 37 36 35 450 ma 600 ma 40 Output Power vs. Frequency vs. P IN Output Power (dbm) 39 38 37 36 35 P IN = 20 dbm P IN = 23 dbm Temp = P IN = 26 dbm Data Sheet Rev. C, January 19, 2017-5 of 12 - www.qorvo.com
Performance Plots Large Signal Conditions unless otherwise specified: VD = +22 V, IDQ = 600 ma, VG = 2.3 V Typical, CW. TGA2214-CP 30 PAE vs. Frequency vs. Temperature 16.0 Power Gain vs. Frequency vs. Temperature Power Added Efficiency (%) 28 26 24 22 20 18 16 14 12 10 Gain (db) 15.5 15.0 14.5 14.0 13.5 13.0 12.5 12.0 Power Added Efficiency (%) 30 28 26 24 22 20 18 16 14 12 PAE vs. Input Power vs. Frequency Temp = 10 18 20 22 24 26 28 Input Power (dbm) Gain (db) 21 19 17 15 13 Power Gain vs. Input Power vs. Frequency 11 9 7 Temp = 5 18 20 22 24 26 28 Input Power (dbm) 30 PAE vs. Frequency vs. Drain Current 16.0 Power Gain vs. Freq. vs. Drain Current Power Added Efficiency (%) 28 26 24 22 20 18 16 14 12 10 450 ma 600 ma Gain (db) 15.5 15.0 14.5 14.0 13.5 13.0 12.5 12.0 450 ma 600 ma Data Sheet Rev. C, January 19, 2017-6 of 12 - www.qorvo.com
Performance Plots Large Signal Conditions unless otherwise specified: VD = +22 V, IDQ = 600 ma, VG = 2.3 V Typical, CW. TGA2214-CP Drain Current (A) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 Drain Current vs. Frequency vs. Temp. Gate Current (ma) 15.5 13.5 11.5 9.5 7.5 5.5 3.5 Gate Current vs. Frequency vs. Temp. 0.6 0.5 1.5-0.5 Drain Current (A) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 Drain Current vs. Input Power vs. Freq. Temp = 0.5 18 20 22 24 26 28 Input Power (dbm) Gate Current (ma) 25.5 23.5 21.5 19.5 17.5 15.5 13.5 11.5 9.5 Gate Current vs. Input Power vs. Freq. Temp = 7.5 5.5 3.5 1.5-0.5 18 20 22 24 26 28 Input Power (dbm) Data Sheet Rev. C, January 19, 2017-7 of 12 - www.qorvo.com
Performance Plots Linearity Conditions unless otherwise specified: VD = +22 V, IDQ = 600 ma, VG = 2.3 V Typical, CW. IM3 (dbc) 0-5 -15-25 IM3 vs. Output Power vs. Frequency 100 MHz Tone Spacing, Temp = -35-40 -45-50 10 15 20 25 30 35 Output Power per Tone (dbm) IM5 (dbc) -40-50 IM5 vs. Output Power vs. Frequency 100 MHz Tone Spacing, Temp = -60-70 -80 10 15 20 25 30 35 Output Power per Tone (dbm) 0-5 Intermodulation Distortion vs. Frequency Pout/tone = 31 dbm, 100 MHz Tone Spacing Temp = IMD (dbc) -15-25 -35-40 IM5 IM3-15 2 nd Harmonic vs. Output Power vs. Freq. Temp = 3 rd Harmonic vs. Output Power vs. Freq. Temp = 2f 0 Output Power (dbc) -25-35 -40 14 GHz -45 15 20 25 30 35 40 Fundamental Ouptut Power (dbm) 3f 0 Output Power (dbc) -40-50 -60-70 14 GHz -80 15 20 25 30 35 40 Fundamental Ouptut Power (dbm) Data Sheet Rev. C, January 19, 2017-8 of 12 - www.qorvo.com
Applications Information and Pin Layout Vg Vg1 C5 10 uf R3 10 Ohms 1 10 C11 10 uf R7 10 Ohms Vg2 2 RF IN 3 4 9 8 RF OUT 7 Vd1 5 R4 10 Ohms 6 R8 10 Ohms Vd2 C6 10 uf C12 10 uf Vd Bias Up Procedure 1. Set ID limit to 1.5 A, IG limit to 26 ma 2. Apply 5 V to VG 3. Apply +22 V to VD; ensure IDQ is approx. 0 ma 4. Adjust VG until IDQ = 600 ma (VG ~ 2.3 V Typ.). 5. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to 5 V; ensure IDQ is approx. 0 ma 3. Set VD to 0 V 4. Turn off VD supply 5. Turn off VG supply Pad Description Pin No. Symbol Description 1,10 VG1, VG2 (respectively) Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 3 RFIN Output; matched to 50 Ω; DC blocked 2,4,7,9 GND Must be grounded on the PCB. 5,6 VD1, VD2 (respectively) Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 8 RFOUT Input; matched to 50 Ω; DC blocked Data Sheet Rev. C, January 19, 2017-9 of 12 - www.qorvo.com
Evaluation Board Notes: 1. Both VD and VG pins must be biased. Bill of Materials Reference Des. Value Description Manuf. Part Number C5, C6, C11, C12 10 µf Cap, 1206, +50 V, 20 %, X5R Various R3, R4, R7, R8 10 Ohm Res, 0402, 5 % Various Assembly Notes 1. Clean the board or module with alcohol. Allow it to dry fully. 2. Nylock screws are recommended for mounting the TGA2214-CP to the board. 3. To improve the thermal and RF performance, we recommend the following: a. Apply thermal compound or 4 mils indium shim between the package and the board. b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between the heat sink and the board. 4. Apply solder to each pin of the TGA2214-CP. 5. Clean the assembly with alcohol. Data Sheet Rev. C, January 19, 2017-10 of 12 - www.qorvo.com
Mechanical Information Units: inches Tolerances: unless specified x.xx = ± 0.01 x.xxx = ± 0.005 Materials: Base: Copper Lid: Plastic All metalized features are gold plated Part is epoxy sealed Marking: 2214: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID Data Sheet Rev. C, January 19, 2017-11 of 12 - www.qorvo.com
Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1B JEDEC Standard JESD22 A114 MSL 260 C Convection Reflow Level 5A JEDEC standard IPC/JEDEC J- STD-020. Caution! ESD-Sensitive Device Solderability Compatible with the latest version of J-STD-020, Lead-free solder, 260 C RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: www.qorvo.com Tel: +1.972.994.8465 Email: info-sales@qorvo.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet Rev. C, January 19, 2017-12 of 12 - www.qorvo.com