Low-Power CMOS Ionization Smoke Detector IC with Interconnect and Temporal Horn Driver

Similar documents
Low-Power CMOS Ionization Smoke Detector IC

CMOS Micro-Power Comparator plus Voltage Follower

Low Power CMOS SEMICONDUCTOR TECHNICAL DATA

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.

ARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev.

Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 6 C/W

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data

Low Voltage 1:18 Clock Distribution Chip

RF LDMOS Wideband 2-Stage Power Amplifiers

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Characteristic Symbol Value Unit Thermal Resistance, Junction to Case. Test Conditions

Photoelectric Smoke Detector IC with I/O For Line-Powered Applications

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

LIFETIME BUY LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09. RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF374A

Using a Pulse Width Modulated Output with Semiconductor Pressure Sensors

RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET

921 MHz-960 MHz SiFET RF Integrated Power Amplifier

0.7 A 6.8 V Dual H-Bridge Motor Driver

Low-Pressure Sensing Using MPX2010 Series Pressure Sensors

Heterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier

Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier

ARCHIVE INFORMATION MW4IC2230MBR1 MW4IC2230GMBR1. Freescale Semiconductor. Technical Data. Document Number: MW4IC2230 Rev.

SEMICONDUCTOR TECHNICAL DATA

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

Dual High-Side TMOS Driver

1.0 A 6.8 V Dual Motor Driver IC

MC3456 DUAL TIMING CIRCUIT

MC MOTOROLA CMOS SEMICONDUCTOR TECHNICAL DATA

P SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS

RF LDMOS Wideband Integrated Power Amplifiers

Using the Break Controller (BC) etpu Function Covers the MCF523x, MPC5500, and all etpu-equipped Devices

0.4 A Dual H-Bridge Motor Driver IC

RF LDMOS Wideband Integrated Power Amplifiers

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN MHz -960 MHz SiFET RF Integrated Power Amplifier MHVIC910HNR2. Freescale Semiconductor

Quiescent Current Control for the RF Integrated Circuit Device Family

ARCHIVE INFORMATION LOW POWER NARROWBAND FM IF

RF LDMOS Wideband 2-Stage Power Amplifiers

±10g Dual Axis Micromachined Accelerometer

SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY

Hardware Design Considerations using the MC34929

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B

P D Storage Temperature Range T stg - 65 to +175 C Operating Junction Temperature T J 200 C

RF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2. Freescale Semiconductor, I. The Wideband IC Line SEMICONDUCTOR TECHNICAL DATA

LOW POWER NARROWBAND FM IF

NCP800. Lithium Battery Protection Circuit for One Cell Battery Packs

DatasheetArchive.com. Request For Quotation

Freescale Semiconductor, I

Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family

FlexTimer and ADC Synchronization

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT

Implementing PFC Average Current Mode Control using the MC9S12E128 Addendum to Reference Design Manual DRM064

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT

1.2 A 15 V H-Bridge Motor Driver IC

ORDERING INFORMATION # of Ports Pressure Type Device Name Case No.

2 Receiver Tests Packet Error Rate (PER), Reported Energy Value, and Clear Channel Assessment (CCA) are used to assess and characterize the receiver.

path loss, multi-path, fading, and polarization loss. The transmission characteristics of the devices such as carrier frequencies, channel bandwidth,

STEPPER MOTOR DRIVER SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

QUAD EIA 422 LINE DRIVER WITH THREE STATE OUTPUTS

EMC, ESD and Fast Transient Pulses Performances

XGATE Library: PWM Driver Generating flexible PWM signals on GPIO pins

P D Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 200 C

PIN CONNECTIONS

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

MARKING DIAGRAMS MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 1.) ORDERING INFORMATION PDIP 14 P SUFFIX CASE 646

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara

SEMICONDUCTOR TECHNICAL DATA

NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8

NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8

MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NDF10N62Z. N-Channel Power MOSFET

LM339S, LM2901S. Single Supply Quad Comparators

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

P2I2305NZ. 3.3V 1:5 Clock Buffer

P2042A LCD Panel EMI Reduction IC

MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION PDIP 8 N SUFFIX CASE 626 LM311D AWL YYWW SO 8 98 Units/Rail

P D Storage Temperature Range T stg - 65 to +150 C Operating Junction Temperature T J 150 C

NTD7N ELECTRICAL CHARACTERISTICS ( unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Break

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

56F Phase AC Induction Motor V/Hz Control using Processor Expert TM Targeting Document. 56F bit Digital Signal Controllers. freescale.


NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection

DUAL TIMING CIRCUIT SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS ORDERING INFORMATION. Figure Second Solid State Time Delay Relay Circuit

PERIPHERAL DRIVER ARRAYS

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m


NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70

MMSZ2V4T1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

Transcription:

Freescale Semiconductor Technical Data Low-Power CMOS Ionization Smoke Detector IC with Interconnect and Temporal Horn Driver The, when used with an ionization chamber and a small number of external components, will detect smoke. When smoke is sensed, an alarm is sounded via an external piezoelectric transducer and internal drivers. This circuit is designed to operate in smoke detector syste that comply with UL217 and UL268 specifications. Features Ionization Type with On-Chip FET Input Comparator Piezoelectric Horn Driver Guard Outputs on Both Sides of Detect Input Input-Protection Diodes on the Detect Input Low-Battery Trip Point, Internally Set, can be Altered Via External Resistor Detect Threshold, Internally Set, can be Altered Via External Resistor Pulse Testing for Low Battery Uses LED for Battery Loading Comparator Output for Detect Internal Reverse Battery Protection Strobe Output for External Trim Resistors I/O Pin Allows Up to 40 Units to be Connected for Common Signaling Supports NFPA 72, ANSi 53.41, and ISO 8201 Audible Emergency Evacuation Signals Power-On Reset Places IC in Standby Mode Pb-Free Packaging Designated by Suffix Code ED ORDERING INFORMATION Device Case No. Package P ED 648-08 Plastic Dip Rev. 4.1, 09/2006 IONIZATION SMOKE DETECTOR IC WITH INTERCONNECT AND TEMPORAL HORN DRIVER DETECT COMP. OUT I/O LOW V SET STROBE OUT LED VDD TIMING RESISTOR FEEDBACK P SUFFIX ED SUFFIX (PB-FREE) PLASTIC DIP CASE 648-08 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 GUARD HI-Z DETECT INPUT GUARD LO-Z SENSITIVITY SET OSC CAPACITOR SILVER BRASS VSS Figure 1. Pin Assignment Freescale Semiconductor, Inc. reserves the right to change the detail specifications, as may be required, to permit improvements in the design of its products. Freescale Semiconductor, Inc., 2007. All rights reserved.

To Other Units VDD VDD I/O 2 FEEDBACK 8 45 K LOW V SET DETECT COMP. OUT SENSITIVITY SET STROBE OUT 325 K 3 1 13 4 280 K + - Low Battery Comparator Detect Comparator + - 15 Detect Input Guard Amp Lo-Z + - V DD HI-Z 14 16 Alarm Logic Power-on Reset OSC And Timing VDD = Pin 6 VSS = Pin 9 5 11 SILVER 10 BRASS LED 12 7 VDD Figure 2. Block Diagram Table 1. Maximum Ratings (1) (Voltages referenced to V SS ) Rating Symbol Value Unit DC Supply Voltage V DD 0.5 to + 15 V Input Voltage, All Inputs Except Pin 8 V IN 0.25 to V DD + 0.25 V DC Current Drain per Input Pin, Except Pin 15 = 1 ma I 10 ma DC Current Drain per Output Pin I 30 ma Operating Temperature Range T A 10 to + 60 C Storage Temperature Range T STG 55 to + 125 C Reverse Battery Time t RB 5.0 s 1. Maximum Ratings are those values beyond which damage to the device may occur. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit. For proper operation it is recommended that V in and V out be constrained to the range V SS (V in or V out ) V DD. 2 Freescale Semiconductor

Table 2. Recommended Operating Conditions (Voltages referenced to V SS ) Parameter Symbol Value Unit Supply Voltage V DD V Timing Capacitor 0.1 μf Timing Resistor 8.2 MΩ Battery Load (Resistor or LED) 10 ma Table 3. Electrical Characteristics (Voltages referenced to V SS, TA = 25 C) Characteristic Symbol V DD V DC Min Typ (1) Max Unit Operating Voltage V DD 6.0 12 V Output Voltage Piezoelectric Horn Drivers (I OH = 16 ma) Comparators (I OH = 30 μa) Piezoelectric Horn Drivers (I OL = + 16 ma) Comparators (I OL = +30 μa) V OH V OL Output Voltage - LED Driver, I OL = 10 ma V OL 7.2 3.0 V Output Impedance, Active Guard Pin 14 Pin 16 LO-Z HI-Z 7.2 7.2 Operating Current (R bias = 8.2 MΩ) I DD 12.0 Input Current - Detect (40% R.H.) I IN ±1.0 pa Input Current, Pin 8 I IN ±0.1 μa Input Current @ 50 C, Pin 15 I IN ±6.0 pa 6.3 8.5 8.8 0.1 5.0 0.9 0.5 10 1000 12.0 V V kω μa Internal Set Voltage Low Battery Sensitivity V LOW V SET 7.2 47 50 7.8 53 V %V DD Hysteresis V HYS 75 100 150 mv Offset Voltage (measured at V IN = VDD/2) Active Guard Detect Comparator V OS ±100 ±50 mv Input Voltage Range, Pin 8 V IN VSS 10 VDD + 10 V Input Capacitance C IN 5.0 pf Common Mode Voltage Range, Pin 15 V CM 0.6 VDD 2 V I/O Current, Pin 2 Input, V IH = VDD 2 Output, V OH = VDD 2 I IH I OH 25 4.0 100 16 μa ma 1. Data labelled Typ'' is not to be used for design purposes but is intended as an indication of the IC's potential performance. Freescale Semiconductor 3

Table 4. Timing Parameters (C = 0.1 μf, R bias = 8.2 MΩ, V DD = V, T A = 25 C, See Figure 7) Oscillator Period Characteristics Symbol Min Max Units No Smoke Smoke t CI 1.46 37.5 Oscillator Rise Time t R 10.1 12.3 1.85 45.8 s Horn Output (During Smoke) On Time Off Time PW ON 450 PW OFF 450 550 550 LED Output Between Pulses On Time t LED 35.0 PW ON 10.1 44.5 12.3 s Horn Output (During Low Battery) I D, Drain Current (ma) 100.0 10.0 1.0 V DD = V DC V DD = 7.2 V DC T A = 25 C Figure 3. Typical LED Output I-V Characteristic On Time Between Pulses 0.1 0 1 2 3 4 5 6 7 8 9 10 V DS, Drain To Source Voltage (V DC ) I D, Drain Current (ma) 10.0 1.0 0.1 t ON 10.1 t OFF 35.0 V DD = V DC or 7.2 V DC 12.3 44.5 T A = 25 C 0.01 0 1 2 3 4 5 6 7 8 9 10 V DS, Drain To Source Voltage (V DC) Figure 4. Typical Comparator Output I-V Characteristic s P-CH Source and N-CH Sink Current 1000.0 1000.0 T A = 25 C T A = 25 C I D, Drain Current (ma) 100.0 10.0 V DD = Vdc V DD = 7.2 Vdc I D, Drain Current (ma) 100.0 10.0 V DD = Vdc V DD = 7.2 Vdc P-CH Source Current N-CH SInk Current 1.0 0 1 2 3 4 5 6 7 8 9 10 V DS, Drain To Source Voltage (Vdc) Figure 5. Typical P Horn Driver Output I-V Characteristic DEVICE OPERATION 1.0 0 1 2 3 4 5 6 7 8 9 10 V DS, Drain To Source Voltage (Vdc) Timing The internal oscillator of the operates with a period of 1.65 seconds during no-smoke conditions. Each 1.65 seconds, internal power is applied to the entire IC and a check is made for smoke, except during LED pulse, Low Battery Alarm Chirp, or Horn Modulation (in smoke). Every 24 clock cycles a check is made for low battery by comparing V DD to an internal zener voltage. Since very small currents are used in the oscillator, the oscillator capacitor should be of a low leakage type. Detect Circuitry If smoke is detected, the oscillator period becomes 41.67 and the piezoelectric horn oscillator circuit is 4 Freescale Semiconductor

enabled. The horn output is modulated 500 on, 500 off. During the off time, smoke is again checked and will inhibit further horn output if no smoke is sensed. During local smoke conditions the low battery alarm is inhibited, but the LED pulses at a 1.0 Hz rate. In remote smoke, the LED is inhibited as well. An active guard is provided on both pins adjacent to the detect input. The voltage at these pins will be within 100 mv of the input signal. This will keep surface leakage currents to a minimum and provide a method of measuring the input voltage without loading the ionization chamber. The active guard op amp is not power strobed and thus gives constant protection from surface leakage currents. Pin 15 (the Detect input) has internal diode protection against static damage. Interconnect The I/O (Pin 2), in combination with V SS, is used to interconnect up to 40 remote units for common signaling. A Local Smoke condition activates a current limited output driver, thereby signaling Remote Smoke to interconnected units. A small current sink improves noise immunity during non-smoke conditions. Remote units at lower voltages do not draw excessive current from a sending unit at a higher voltage. The I/O is disabled for three oscillator cycles after power up, to eliminate false alarming of remote units when the battery is changed. Sensitivity/Low Battery Thresholds Both the sensitivity threshold and the low battery voltage levels are set internally by a common voltage divider (see To Other Units 1 16 2 15 3 14 Figure 2) connected between VDD and VSS. These voltages can be altered by external resistors connected from pins 3 or 13 to either VDD or VSS. There will be a slight interaction here due to the common voltage divider network. The sensitivity threshold can also be set by adjusting the smoke chamber ionization source. Test Mode Since the internal op amps and comparators are power strobed, adjustments for sensitivity or low battery level could be difficult and/or time-consuming. By forcing Pin 12 to V SS, the power strobing is bypassed and the output, Pin 1, constantly shows smoke/no smoke. Pin 1 = VDD for smoke. In this mode and during the 10 power strobe, chip current rises to approximately 50 μa. LED Pulse The 9-volt battery level is checked every 40 seconds during the LED pulse. The battery is loaded via a 10 ma pulse for 11.6. If the LED is not used, it should be replaced with an equivalent resistor such that the battery loading remains at 10 ma. Hysteresis When smoke is detected, the resistor/divider network that sets sensitivity is altered to increase sensitivity. This yields approximately 100 mv of hysteresis and reduces false triggering. 1 M 1 M TEST 4 13 5 12 330 Ω 6 11 0.1 μf 0.1 μf 8.2 MΩ + 9 V 7 8 10 9 1.5 MΩ* 0.001 μf 220 kω* *NOTE: Component values may change depending on type of piezoelectric horn used. Figure 6. Typical Application as Ionization Smoke Detector Freescale Semiconductor 5

OSC Pin 12 1 2 3 4 5 6 7 8 9 23 24 1 6 12 18 24 OSC Pin 12 Smoke - N - Y Low Bat - Y - N No Smoke, Low Battery No Smk No Low Bat Smoke Latch Alarm Condition No Smk Smoke - N - Y HYST Pin 13 >> ( 100 mv Level Shift) Low Bat - Y - N Horn - On - Off LED - Off - On Low Battery Chirp >> NFPA Mod >> Figure 7. MC145017 Timing Diagram NOTE: 1. Horn modulation is self-completing. When going from smoke to no smoke, the alarm condition will terminate only when horn is off. Comparators are strobed once per cycle (1.65 sec for no smoke, 40 ec for smoke). For timing under remote conditions, refer to MC14468 data sheet. NFPA72: Temporal Horn Modulation Pattern 24 Clocks 24 Clocks (Note 1) Horn - On - Off LED - Off - On 0.5 Sec 0.5 Sec 0.5 Sec 0.5 Sec 0.5 Sec 1.5 Sec 167ec 83 ec Traditional 4/6 Horn Modulation Pattern Figure 8. Horn Modulation 6 Freescale Semiconductor

PACKAGE DIMENSIONS 16 1 8 H G F 9 D 16 PL B S C K -A- -T- 0.25 (0.010) M T A SEATING PLANE M STYLE 1: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. CATHODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE 15. ANODE 16. ANODE J L M STYLE 2: PIN 1. COMMON DRAIN 2. COMMON DRAIN 3. COMMON DRAIN 4. COMMON DRAIN 5. COMMON DRAIN 6. COMMON DRAIN 7. COMMON DRAIN 8. COMMON DRAIN 9. GATE 10. SOURCE 11. GATE 12. SOURCE 13. GATE 14. SOURCE 15. GATE 16. SOURCE CASE 648-08 ISSUE R 16-LEAD PLASTIC DIP NOTES: 1. 2. 3. 4. 5. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. DIMENSION B DOES NOT INCLUDE MOLD FLASH. ROUNDED CORNERS OPTIONAL. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.740 0.770 18.80 19.55 B 0.250 0.270 6.35 6.85 C 0.145 0.175 3.69 4.44 D 0.015 0.021 0.39 0.53 F 0.040 0.70 1.02 1.77 G 0.100 BSC 2.54 BSC H 0.050 BSC 1.27 BSC J 0.008 0.015 0.21 0.38 K 0.110 0.130 2.80 3.30 L 0.295 0.305 7.50 7.74 M 0 10 0 10 S 0.020 0.040 0.51 1.01 Freescale Semiconductor 7

How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-rohs-compliant and/or non-pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale s Environmental Products program, go to http:// www.freescale.com/epp. Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclai any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in syste intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all clai, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006. All rights reserved. Rev. 4.1 09/2006