v1.1 AMPLIFIER, 3. - 7. GHz Typical Applications The HMC39A is ideal for: Point-to-Point Radios VSAT LO Driver for HMC Mixers Military EW, ECM, C 3 I Space Functional Diagram Features Gain: 17. db Noise Figure: 1.7 db Single Supply Voltage: +V Ohm Matched Input/Output No External Components Required Small Size: 1.3 x 1. x.1 mm General Description The HMC39A is a GaAs MMIC Low Noise Amplifier die which operates between 3. and 7. GHz. The amplifier provides 17. db of gain, 1.7 db noise figure, and 3. dbm IP3 from a +V supply voltage. The HMC39A has six bonding adjustment options which allow the user to select the bias point and output power of the device (+1 to +19.7 dbm). The HMC39A amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.3 mm ) size. All data is with the chip in a Ohm test fixture connected via.mm (1 mil) diameter wire bonds of minimal length.31mm (1 mils). Electrical Specifications, T A = + C, Vdd = V Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 4. - 6. 3. - 7. GHz Gain 14. 17.4 14. 17. db Gain Variation Over Temperature.. db/ C Noise Figure 1.7 3. 1.7 3.4 db Input Return Loss 1 1 db Output Return Loss db Output Power for 1 db Compression (P1dB) 19. 19 dbm Saturated Output Power (Psat). dbm Output Third Order Intercept (IP3) 3. 3. dbm Supply Current (Idd) 9 7 9 7 ma Note: Data taken with pad PS bonded to ground (state ) unless otherwise noted. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 6-9
v1.1 AMPLIFIER, 3. - 7. GHz Broadband Gain & Return Loss Gain vs. Temperature 19 RESPONSE (db) 1 1 - -1 - - 3 4 6 7 8 9 S1 S11 S Input Return Loss vs. Temperature RETURN LOSS (db) - -1 GAIN (db). 17. 17. 1. 1 Output Return Loss vs. Temperature RETURN LOSS (db) - -1 - - - Noise Figure vs. Temperature NOISE FIGURE (db) 4. 4 3. 3. 1. 1. Reverse Isolation vs. Temperature ISOLATION (db) - -1 - - -3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 6-9
v1.1 AMPLIFIER, 3. - 7. GHz P1dB vs. Temperature Psat vs. Temperature P1dB (dbm) 14 1 1 3 4 6 7 8 Output IP3 vs. Temperature IP3 (dbm) 4 36 3 8 4 Psat (dbm) 14 1 1 3 4 6 7 8 Gain, Noise Figure & Power vs. Supply Voltage @. GHz GAIN(dB), P1dB(dBm) 1 19 17 1.8 1.6 1.4 1. NOISE FIGURE (db) 3 4 6 7 8 1 4. 4.7.. SUPPLY VOLTAGE (V) GAIN P1dB NOISE FIGURE P1dB vs. Power Select State 1 Gain & Noise Figure vs. Power Select State P1dB (dbm) 19 17 1 13 11 GAIN, NOISE FIGURE (db) 14 1 1 8 6 4 9 State 1 Idd=9mA State Idd=4mA State 3 Idd=48mA State 4 Idd=41mA State Idd=34mA State 6 Idd=4mA Gain State 1 Gain State Gain State 3 Gain State 4 Gain State Gain State 6 NF State 1 NF State NF State 3 NF State 4 NF State NF State 6 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 6-9
v1.1 AMPLIFIER, 3. - 7. GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +7 Vdc Vdd (Vdc) Idd (ma) RF Input Power (RFIN)(Vdd = + Vdc) Outline Drawing + dbm Channel Temperature 1 C Continuous Pdiss (T= 8 C) (derate 7.1 mw/ C above 8 C) Thermal Resistance (channel to die bottom).47 W C/W Storage Temperature -6 to +1 C Operating Temperature ESD - to +8 C Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS +4. 7 +. 9 +. 6 (State Depicted) Die Packaging Information [1] Standard Alternate WP- (Waffle Pack) [] [1] Refer to the Packaging Information section for die packaging dimensions. [] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS]. ALL TOLERANCES ARE ±.1 (.) 3. DIE THICKNESS IS.4 (.1) BACKSIDE IS GROUND 4. BOND PADS ARE.4 (.1) SQUARE. BOND PAD SPACING, CTR-CTR:.6 (.1) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD 4 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 6-9
v1.1 AMPLIFIER, 3. - 7. GHz Pad Descriptions Pad Number Function Description Interface Schematic 3 RFIN This pad is AC coupled and matched to Ohms 6 7 8 9 1 1, Power Select PS1 PS PS3 PS4 PS PS6 Vdd, Vdd (alt.) One of these pads must be connected to ground. See Power Select Table for selection criteria. Power supply voltage. Connect either pad 1 or pad to +V supply. No choke inductor or bypass capacitor is needed. 4 RFOUT This pad is AC coupled and matched to Ohms Die Bottom GND Die bottom must be connected to RF/DC ground. Power Select Table State Pads Bonded to Ground Typical Idd (ma) Typical P1dB (dbm) 1 PS1 69 19.7 PS 9 19.4 3 PS3 49.8 4 PS4 38 17. PS 7 14.8 6 PS6 17 1.3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 6-9
v1.1 AMPLIFIER, 3. - 7. GHz Assembly Diagram Note: State shown. PS bonded to ground. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 8/ gold tin preform is recommended with a work surface temperature of C and a tool temperature of 6 C. When hot 9/1 nitrogen/hydrogen gas is applied, tool tip temperature should be 9 C. DO NOT expose the chip to a temperature greater than 3 C for more than seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer s schedule. Wire Bonding Ball or wedge bond with.mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 1 C and a ball bonding force of 4 to grams or wedge bonding force of to grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.31mm (1 mils). 6 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9, Norwood, MA 6-9