1-4 MHz Features 4 PIN diodes in a SOT-2 Plastic Package Externally Selectable Bias and RF Matching Network 1 4, MHz Useable Frequency Band + 43 IP3 @ ( Ω) 1. db Loss @ ( Ω) 3 db Attenuation @ ( Ω) Lead-Free SOT-2 Package 1% Matte Tin Plating over Copper Halogen-Free Green Mold Compound 26 C Reflow Compatible RoHS* Compliant Version of MA4P274-122 Description M/A-COM s MA4P74-122 is a wideband, lower insertion loss, high IP3, Quad PIN diode π attenuator in a low-cost, lead free surface mount SOT-2 package. Four PIN diodes in one package reduce design parasitics and improve circuit density. These PIN diode attenuators perform well where RF signal amplitude control is required in Ω handset circuits and 7 Ω broadband CATV systems. Exceptional insertion loss, attenuation range, and IP3 at <1 ma bias make these devices suitable for better power level control in RF amplifiers. Functional Schematic Pin Configuration Pin No. Function Pin No. Function 1 RF IN 4 Shunt 1 Bias 2 Series Bias Shunt 2 Bias 3 RF OUT Absolute Maximum Ratings 2,3 Ordering Information 1 Model No. MA4P74-122T MADP-74-1SMB Package Tape and Reel Sample Board Parameter Absolute Maximum Operating Temperature -6 C to +12 C Storage Temperature No Dissipated Power -6 C to +1 C DC Voltage at Temperature Extremes - 1 V DC Current 7 ma 1. Reference Application Note M13 for reel size information. 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. * Restrictions on Hazardous Substances, European Union Directive 22/9/EC. 1 North America Tel: 8.366.2266 / Fax: 978.366.2266 Europe Tel: 44.198.74.2 / Fax: 44.198.74.3
1-4 MHz Typical Ω Performance 4 @ 2 C using Wideband RF Circuit Design Parameter Test Conditions Units Min. Typ. Max. Insertion Loss Insertion Loss Return Loss Attenuation +3 ma Series Diode Bias /.7 V Shunt 1 and 2 Bias +6. ma Series Diode Bias /.7 V Shunt 1 and 2 Bias +6. ma Series Diode Bias /.7 V Shunt 1 and 2 Bias ma - Series Diode Bias /.7 V - Shunt 1 and 2 Bias db -2. db -1. db -1 db -29 Input IP3 ma Series Diode Bias /.7 V Shunt 1 and 2 Bias +6. ma Series Diode Bias /.7 V Shunt 1 and 2 Bias F1 =, F2 = 11 MHz 43 43 Input IP3 ma Series Diode Bias /.7 V Shunt 1 and 2 Bias +6. ma Series Diode Bias /.7 V Shunt 1 and 2 Bias F1 = 1 MHz, F2 = 11 MHz 43 33 Settling Time RF C.W. Incident Power Within 1 db of Final Attenuation Value µs 3-2 V Series Diode Bias /.7 V Shunt 1 and 2 Bias +2 4. Values shown include through loss calibrated out of RF test circuit. Typical 7 Ω Performance @ +2 C using Wideband RF Circuit Design Parameter Test Conditions Units Min. Typ. Max. Insertion Loss +2 ma Series Diode Bias / 1. V Shunt 1 and 2 Bias +4. ma Series Diode Bias / 1. V Shunt 1 and 2 Bias db db -1.1 -.6 Attenuation Return Loss ma / Series Diode and 1. V Shunt 1 and 2 Bias +4. ma / Series Diode and 1. V Shunt 1 and 2 Bias db -27 db -1. Values shown include through loss calibrated out of RF test circuit. 2 North America Tel: 8.366.2266 / Fax: 978.366.2266 Europe Tel: 44.198.74.2 / Fax: 44.198.74.3
1-4 MHz Recommended PCB Layout Series and Shunt Diode Bias Currents as a Function of Vseries and Vshunt Voltage (Values shown are PER DIODE) Vshunt Bias (V) Vseries Bias (V) Iseries Diode (ma) Ishunt Diode (ma) Parts List Part Value Case Style Manufacturer C1, C2, C3, C4, C R1, R2, R3, R4, R 1 pf 63 Murata 1 Ω 42 Panasonic MA4P74-122T Spice Model.7..192.7 1.16.12.7 2.443.48.7 3 /773.7 4 1.99.7 1.426.7 6 1.7.7 7 2.92.7 8 2.424.7 9 2.76.7 1 3.88 Pin Diode Model NLPINM2 Is = 1E-14 A Vi = V Un = 9 cm 2 /V-sec Wi = 6 um Rr = 1.2 Ohm Cmin =.2 pf Tau = 1. usec Rs =.1 Ohm Cjo =.27 pf Vj =.7 V M =. Fc =. Imax = 2.E+6 A/m 2 Kf = Af = 1.7 11 3.421.7 12 3.74.7 13 4.87.7 14 4.41.7 1 4.743.7 16.81.7 17.46.7 18.7.7 19 6.79.7 2 6.413 3 North America Tel: 8.366.2266 / Fax: 978.366.2266 Europe Tel: 44.198.74.2 / Fax: 44.198.74.3
1-4 MHz Schematic 1 -, Ω, RF Circuit 9 9. Keeping PIN 4 & PIN as Separate Bias Points (Same V) reduces RF leakage (increases attenuation) through an otherwise connected Common Anode Bias Note. Schematic 1-4 GHz, Ω, RF Circuit 1 1. Keeping PIN 4 & PIN as Separate Bias Points (Same V) reduces RF leakage through an otherwise connected Common Anode Bias Node. 4 North America Tel: 8.366.2266 / Fax: 978.366.2266 Europe Tel: 44.198.74.2 / Fax: 44.198.74.3
1-4 MHz Lumped Element Model for MA4P74-122 PIN Diode π Attenuator in SOT-2 Lead Free SOT-2 Reference Application Note M38 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. North America Tel: 8.366.2266 / Fax: 978.366.2266 Europe Tel: 44.198.74.2 / Fax: 44.198.74.3
1-4 MHz Typical Performance Curves @ +2 C, -, Shunt Bias =.7 Volts Insertion Loss vs. Frequency Attenuation vs. Control Voltage -. 1 Insertion Loss (db) -1. -1. -2. Insertion Loss (2V Series Diode) Insertion Loss (1V Series Diode) Attenuation (db) -1-2 -3-4 - MHz MHz -6-2. 2 4 6 8 1 Frequency (MHz) -7 2 1 1 - -1-1 -2 Input Return Loss vs. Control Voltage Output Return Loss vs. Control Voltage - -1-1 -2-2 -3-3 MHz MHz -2-3 -3 MHz MHz -4 2 1 1-4 2 1 1 IP3 vs. Control Voltage 7 6 F1 =, F2 = 11 MHz F1 = 1 MHz, F2 = 11 MHz 4 3 2 6 1 2 1 1 North America Tel: 8.366.2266 / Fax: 978.366.2266 Europe Tel: 44.198.74.2 / Fax: 44.198.74.3
1-4 MHz Typical Performance Curves @ +2 C, 1 - MHz, Shunt Bias =.7 Volts Insertion Loss vs. Frequency Attenuation vs. Control Voltage Insertion Loss (db) -2-4 -6-8 Insertion Loss (2V) Insertion Loss (1V) - -1-1 -2-2 -3 2 MHz 3 MHz 4 MHz MHz -1 1 2 3 4 Frequency (GHz) -3 1 1 2 Input Return Loss vs. Control Voltage -8-1 -12 Output Return Loss vs. Control Voltage -8-1 -12-14 -16-18 2 MHz 3 MHz 4 MHz MHz -14-16 -18 2 MHZ 3 MHZ 4 MHZ MHZ -2-2 -22-22 -24 1 1 2 IP3 vs. Control Voltage (1 MHz Spacing) -24 1 1 2 P1dB vs. Control Voltage 38 2 MHz 3 MHz 4 MHz MHz 36 34 4 4 32 3 28 26 2 MHz 3 MHz 4 MHz MHz 7 3 2 1 1 24 2 1 1 North America Tel: 8.366.2266 / Fax: 978.366.2266 Europe Tel: 44.198.74.2 / Fax: 44.198.74.3