PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS

Similar documents
The Common Emitter Amplifier Circuit

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT

7. Bipolar Junction Transistor

EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics

Chapter 3 Bipolar Junction Transistors (BJT)

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model

Bipolar Junction Transistors

Electronic Circuits - Tutorial 07 BJT transistor 1

Figure1: Basic BJT construction.

After the initial bend, the curves approximate a straight line. The slope or gradient of each line represents the output impedance, for a particular

Transistors and Applications

EXPERIMENT 12: SIMULATION STUDY OF DIFFERENT BIASING CIRCUITS USING NPN BJT

.dc Vcc Ib 0 50uA 5uA

Başkent University Department of Electrical and Electronics Engineering EEM 214 Electronics I Experiment 8. Bipolar Junction Transistor

Chapter 3. Bipolar Junction Transistors

14. Transistor Characteristics Lab

Chapter 3: TRANSISTORS. Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh

Transistor Characteristics

Chapter 5 Transistor Bias Circuits

Chapter 3: Bipolar Junction Transistors

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering

Chapter Two "Bipolar Transistor Circuits"

Early Effect & BJT Biasing

BJT Characteristics & Common Emitter Transistor Amplifier

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)

By: Dr. Ahmed ElShafee

Chapter Three " BJT Small-Signal Analysis "

Electronics EECE2412 Spring 2018 Exam #2

Lecture (01) Transistor operating point & DC Load line

ECE321 Electronics I Fall 2006

COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline

Concepts to be Covered

Lecture 12. Bipolar Junction Transistor (BJT) BJT 1-1

When you have completed this exercise, you will be able to determine the ac operating characteristics of

ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT)

Lecture 9 Transistors

Shankersinh Vaghela Bapu Institute of Technology INDEX

Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS

2. SINGLE STAGE BIPOLAR JUNCTION TRANSISTOR (BJT) AMPLIFIERS

Electronics EECE2412 Spring 2017 Exam #2

Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.

10 Semiconductors - Transistors

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS

Page 1 of 7. Power_AmpFal17 11/7/ :14

E84 Lab 3: Transistor

EXPERIMENT #3 TRANSISTOR BIASING

Lab 3: BJT Digital Switch

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

Experiment # 4: BJT Characteristics and Applications

I C I E =I B = I C 1 V BE 0.7 V

Chapter 4 DC Biasing BJTs. BJTs

Carleton University ELEC Lab 1. L2 Friday 2:30 P.M. Student Number: Operation of a BJT. Author: Adam Heffernan

Bipolar Junction Transistors (BJTs) Overview

The shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect

5.25Chapter V Problem Set

ET215 Devices I Unit 4A

Transistors. electrons N P N holes. Base. An NPN device makes a transistor

4 Transistors. 4.1 IV Relations

ECE 310 Microelectronics Circuits

Transistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes

PHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1

Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved.

Experiment #8: Designing and Measuring a Common-Collector Amplifier

The first transistor. (Courtesy Bell Telephone Laboratories.)

ECEN 325 Lab 7: Characterization and DC Biasing of the BJT

Experiment 9 Bipolar Junction Transistor Characteristics

Homework Assignment 12

ELECTRONICS LAB. PART 3

EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 11/11/10

Experiment 6: Biasing Circuitry

EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 10/27/17

The collector terminal is common to the input and output signals and is connected to the dc power supply. Common Collector Circuit

Electronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.

CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward

Document Name: Electronic Circuits Lab. Facebook: Twitter:

Tutorial #5: Emitter Follower or Common Collector Amplifier Circuit

Lecture #3 BJT Transistors & DC Biasing

Transistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018

Dr. Charles Kim ELECTRONICS I. Lab 5 Bipolar Junction Transistor (BJT) I TRADITIONAL LAB

BFF1303: ELECTRICAL / ELECTRONICS ENGINEERING. Analog Electronics: Bipolar Junction Transistors

Gechstudentszone.wordpress.com

Bipolar Junction Transistors (BJTs)

BJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1

Electronics II Lecture 2(a): Bipolar Junction Transistors

Well we know that the battery Vcc must be 9V, so that is taken care of.

Bipolar Junction Transistor (BJT)

Electronic Troubleshooting

Experiment 6: Biasing Circuitry

Communication Microelectronics (W17)

Electronic Circuits EE359A

Diode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!

By: Dr. Ahmed ElShafee

CO2005: Electronics I. Transistor (BJT) Electronics I, Neamen 3th Ed. 1

b b Fig. 1 Transistor symbols

Experiments #6. Differential Amplifier

Lecture 3: Transistors

STATIC CHARACTERISTICS OF TRANSISTOR

Transcription:

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental solid state component. We want to help you develop some understanding of its characteristics. The most common form of transistor is called a Bipolar Junction Transistor (BJT). There are two types of BJT, NPN and PNP, with different circuit symbols. The letters refer to the solid state properties of the layers of semiconductor material used to make the transistor. Most transistors used today are NPN because they are the easier type to manufacture from silicon. The leads are labelled base (B), collector (C) and emitter (E). The three leads which must be connected correctly in any circuit before switching on any power supplies. A wrongly connected transistor will be damaged instantly. You will find the appropriate locations of the three wire leads on the plastic package by consulting the spec sheet of the transistor you use. WHAT TO DO: 1. Testing transistors. Select an NPN and a PNP transistor pair such as the 2N3904 and the 2N3906. You will need a basic multimeter. Set a digital multimeter to diode test ; an analogue multimeter to a low resistance range.

Test each pair of leads in both directions (six tests in total). The base-emitter (BE) junction should behave like a diode and conduct one way only. The base-collector (BC) junction should behave like a diode and conduct one way only. The collector-emitter (CE) should not conduct either way. The diagram shows how the junctions behave in an NPN transistor. The diodes are reversed in a PNP transistor but the same test procedure can be used. Record all your data. 2. The transistor switch. The transistor is basically an amplifier of current. A small current injected between the base and the emitter encourages a larger current to flow from the collector to the emitter. The phenomenon can be easily illustrated by constructing the circuit below. Connect an NPN transistor into the circuit shown above which uses the transistor as a switch. The supply voltage is not critical, anything between 5 and 12V is suitable. The LED should light when the switch is pressed and go out when the switch is released. Repeat the experiment using a PNP transistor in the same circuit but reverse the LED and the supply voltage. For both experiments measure the current into the base and collector and the current out of the emitter. Also record the base-emitter and collector-emitter voltages in the two states. Increase the value of the 10k resistor until the LED no longer switches. Deduce the maximum current gain of the transistor. 3. The Common Emitter AC Amplifier The basic style of a BJT common emitter amplifier is shown in the figure below. Let us go through the design of the amplifier and the selection of components. I used the following reference http://www.electronicstutorials.ws/amplifier/amp_2.html

Choose the transistor and the voltage supply Vcc I suggest 2N3904 and 12 VDC. The quiescent base voltage (Vb) is determined by the potential divider network formed by the resistors, R1 and R2 and the power supply voltage Vcc and is given as: The supply voltage also determines the collector current, Ic when the transistor is fully "ON" (saturation), Vce = 0. The base current Ib for the transistor is found from the collector current, Ic and the DC current gain beta, β of the transistor. The next steps require the family of characteristic curves for the transistor shown below. The curves are determined experimentally. They consist of plots of the collector current against the collector emitter voltage for range of values of the base current.

Lets assume a typical load resistor, RL of 1.2kΩ. We can calculate the collector current (Ic) flowing through the load resistor when the transistor is switched fully "ON" by assuming Vce is near zero. Given Ic, we can find an Re with a voltage drop of say 1V across it. We can plot a load line on the characteristic curves. The point "A" on the collector current vertical axis of the characteristic curves occurs when Vce = 0 and IC=9.2 ma. Now when the transistor is switched fully "OFF", there is no voltage drop across either resistor Re or RL as no current is flowing through them. Then the voltage drop across the transistor, Vce is equal to the supply voltage, Vcc. This is point "B" on the horizontal axis of the characteristic curves. Generally, the operating or Q-point of the amplifier is selected to be half-way along the load line so the collector current will be given as half of 9.2mA. Therefore, at Q, IC= 4.6mA. The DC load line produces a straight line equation whose slope is given as: -1/(RL + Re). It crosses the vertical Ic axis at a point equal to Vcc/(RL + Re). The actual position of the Q-point on the DC load line is determined by the mean value of Ib. The collector current of the transistor, Ic is also equal to the product of the DC gain beta and the base current (β x Ib). If we assume a (minimum) β value for the transistor of say 100, the base current Ib flowing into the transistor will be given as: Resistors, R1 and R2 are chosen to give a quiescent base current of 92uA. The current flowing through the potential divider circuit has to be large compared to the actual base current Ib. Assume a value of 10 times Ib flowing through the resistor R2 (rule of thumb). Then the value of R2 is given by: If the current flowing through resistor R2 is 10 times the value of the base current, then the current flowing through resistor R1 must be 11 times the value of the base current at 1012uA or 1mA. The voltage across resistor R1 is equal to Vcc - 1.7v (Vre = 0.7 for silicon transistors) which equals 10.3V, therefore R1 is given as:

So, for our example above, the preferred values of the resistors chosen to give a tolerance of 5% are: Then, our original Common Emitter circuit above can triumphantly be rewritten to include the values of the components that we have just calculated. In the old days, hours were spent on these kinds of calculations. Try to reproduce the results using electronic workbench. Build the circuit and measure the quiescent (DC) operating voltages and currents. Do they differ from those calculated? If so, what erroneous assumption may have been made? What value of C1 should therefore be selected to avoid any attenuation of signals above 100 Hz? Measure the input impedance of the circuit? What should the value of C2 be to bypass AC signals above 100 Hz around the resistor Re? If C2 is included in the load line calculation, is the resulting AC load line different from the DC load line we calculated? Measure the AC gain of the circuit above 100 Hz and the greatest sinusoidal input voltage that can be amplified without any distortion of the output signal. Measure the effect of removing C2 on the gain of the circuit?