APT8SM12J 12V, 56A, 4mΩ Package APT8SM12J PRELIMINARY Silicon Carbide N-Channel Power MOSFET DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. G S ISOTOP D S S OT -227 "UL Recognized" file # E145592 D G S SiC MOSFET Features: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, Tj(max) = +175C Fast and reliable body diode Superior avalanche ruggedness FEATURES / TYPICAL APPLICATIONS SiC MOSFET Benefits: High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external Free Wheeling Diode Lower system cost of ownership Applications: PV inverter, converter and industrial motor drives Smart grid transmission & distribution Induction heating, and welding H/EV powertrain and EV charger Power supply and distribution MAXIMUM RATINGS Symbol Parameter Ratings Unit S Drain Source Voltage 12 V Continuous Drain Current @ T C 56 Continuous Drain Current @ T C = 1 C 4 M Pulsed Drain Current 1 176 Gate-Source Voltage -1 to +25 V P D Linear Derating Factor 1.82 W/ C Total Power Dissipation @ T C 273 W THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R θ JC Junction to Case Thermal Resistance.55 C/W A T j Operating Junction Temperature -55 175 T stg Storage Junction Temperature Range -55 15 C W T Package Weight 1.3 oz Torque Mounting Torque (SOT-227 Package), 6-32 or M3 screw 5 1 in lbf.56 1.13 N m 5-7719 Rev B 12/216 1
APT8SM12J Symbol Parameter Test Conditions Min Typ Max Unit C iss Input Capacitance 385 = V, V DD = 1V C rss Reverse Transfer Capacitance 25 f = 1MHz C oss Output Capacitance 22 Q g Total Gate Charge = /2V Q gs Gate-Source Charge V DD = 8V 38 Q gd Gate-Drain Charge = 4A 56 t d(on) Turn-On Delay Time V DD = 8V t r t d(off) Current Rise Time Turn-Off Delay Time = /2V = 4A 1 5 R G = 3. Ω 3 t f Current Fall Time 25 L = 115 µh E on2 Turn-On Switching Energy 4 11 T c E off Turn-Off Switching Energy Freewheeling Diode = APT2SCE12B 3 t d(on) Turn-On Delay Time V DD = 8V t = /2V r Current Rise Time 1 = 4A t d(off) Turn-Off Delay Time 5 R G = 3. Ω 3 t f Current Fall Time 25 L = 115 µh E on2 Turn-On Switching Energy 4 13 T c = 15 C E off Turn-Off Switching Energy Freewheeling Diode = APT2SCE12B 43 ESR Equivalent Series Resistance f = 1MHz, 25mV, Drain Short.58 Ω SCWT Short Circuit Withstand Time = 96V, = 2V, T C 4 μs E AS Avalanche Energy, Single Pulse = 145V, = 2V, = 4A, T C 1 mj unless otherwise specified STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage = V, 12 V R DS(on) Drain-Source On Resistance 2 = 2V, = 4A 4 55 mω (th) Gate-Source Threshold Voltage 1.7 2.5 V =, (th) / Threshold Voltage Temperature Coefficient -5. mv/ C SS Zero Gate Voltage Drain Current unless otherwise specified Source-Drain Diode Characteristics DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit V SD Diode Forward Voltage I SD = 4A, = V 3.7 V t rr Reverse Recovery Time 8 ns Q rr Reverse Recovery Charge I SD = 4A, V DD = 8V di/dt = -1A/µs 54 nc I rrm Reverse Recovery Current 12.2 A 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature 2 Pulse test: Pulse Width < 38µs, duty cycle < 2%. 3 R G is total gate resistance including internal gate driver impedance. 4 E on2 includes energy of APT2SCE12B free wheeling diode. = 12V = V 1 = 125 C 25 I GSS Gate-Source Leakage Current = +2V / -1V ±1 na 22 17 15 µa pf nc ns µj ns µj 5-7719 Rev B 12/216 2
APT8SM12J 12 1 8 6 4 2 = 2V = 75 C = 125 C = -5 C = 15 C 12 1 8 6 4 2 2V 18V 6V 16V 14V 12V 1V 8V 2 4 6 8 1 2 4 6 8 1 Figure 1, Output Characteristics Figure 2, Output Characteristics 12 1 8 6 4 2 = 15 C 2V 18V 16V 14V 12V 1V 8V 6V 2 4 6 8 1 Figure 3, Output Characteristics 12 1 8 6 4 2 18V 16V 2V 14V 12V 1V 8V 6V 2 4 6 8 1 Figure 4, Output Characteristics R DS(on), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED TO 25 C) 2 1.8 1.6 1.4 1.2 1.8.6.4 NORMALIZED TO = 2V @ 2A.2 5 25 25 5 75 1 125 15 175, JUNCTION TEMPERATURE ( C) Figure 5, R DS(on) vs Junction Temperature, GATE-TO-SOURCE VOLTAGE (V) 2 15 1 5 Q GS Q GD I GS S = 4A = 8V Q G 4 8 12 16 2 24 Q G, GATE CHARGE (nc) Figure 6, Gate Charge Characteristics 8 6 4 2 5-7719 Rev B 12/216 3
APT8SM12J C, CAPACITANCE (pf) 1 1 1 f = 1MHz = V C iss C oss C rss 1 1 1 1 1 Figure 7, Capacitance vs Drain-to-Source Voltage,DRAIN CURRENT (A) 8 7 6 5 4 3 2 1 = 15 C = 125 C = 1 C = 75 C = 5 C 2 4 6 8 1 12 14 16, GATE-TO-SOURCE VOLTAGE (V) Figure 8, Output Characteristics vs Temperature S, REVERSE DRAIN CURRENT (A) 5 1 15 2 25 3 35-5 -4-3 -2-1 S, REVERSE DRAIN CURRENT (A) 5 1 15 2 25 3 35 = 125 C -5-4 -3-2 -1 4 4 3.5 3 2.5 2 1.5 1.5 Figure 9, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction 4 4 3.5 3 2.5 2 1.5 1.5 Figure 1, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction S, REVERSE DRAIN CURRENT (A) 5 1 15 2 25 3 35 = 15 C -5-4 -3-2 -1 V (BR)DSS, BREAKDOWN VOLTAGE (V) (NORMALIZED TO 25 C) 1.1 1.5 1..95 4 4 3.5 3 2.5 2 1.5 1.5 Figure 11, Reverse Drain Current vs Drain-to-Source Voltage Third Quadrant Conduction.9 25 5 75 1 125 15 175, JUNCTION TEMPERATURE ( C) Figure 12, Breakdown Voltage vs Temperature 5-7719 Rev B 12/216 4
APT8SM12J 2. 2 (th), THRESHOLD VOLTAGE (V) (NORMALIZED TO 25 C) 1.8 1.6 1.4 1.2 1..8.6.4.2 1 1 1 R DS(on) T C = 1 C 1µs 1µs 1ms 1ms 1ms/DC 5 25 25 5 75 1 125 15 175, JUNCTION TEMPERATURE ( C) Figure 13, Threshold Voltage vs Temperature.1 1 1 1 1 Figure 14, Forward Safe Operating Area. 6 Z θjc, THERMAL IMPEDANCE ( C/W). 5. 4. 3. 2. 1 D =.9.7.5.3.1 Note: P DM t 1 t 2 Duty Factor D = t1 /t 2 1-5.5 Peak T SINGLE PULSE J = P DM x Z θjc + T C 1-4 1-3 1-2.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 15, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 31.5 (1.24) 31.7 (1.248) SOT-227 (ISOTOP ) Package Outline 7.8 (.37) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48) 8.9 (.35) 9.6 (.378) Hex Nut M 4 (4 places ) r = 4. (.157) (2 places) 4. (.157) 4.2 (.165) (2 places).75 (.3).85 (.33) 12.6 (.496) 12.8 (.54) 25.2 (.992) 25.4 (1.) 14.9 (.587) 15.1 (.594) 3.1 (1.185) 3.3 (1.193) 38. (1.496) 38.2 (1.54) 3.3 (.129) 3.6 (.143) 1.95 (.77) 2.14 (.84) * Source Drain * Source *Source terminals are shorted internally. Current handling capability is equal for either Source terminal. Gate 5-7719 Rev B 12/216 Dimensions in Millimeters (Inches) 5
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