Research Paper A NOVEL GDI-MUX BASED LOW POWER-HIGH SPEED 1-BIT FULL ADDER P.Ponsudha, Dr. KR Santha

Similar documents
International Journal of Advance Engineering and Research Development

A Low Power and Area Efficient Full Adder Design Using GDI Multiplexer

An energy efficient full adder cell for low voltage

Implementation of Low Power High Speed Full Adder Using GDI Mux

A Literature Survey on Low PDP Adder Circuits

II. Previous Work. III. New 8T Adder Design

A Novel Low Power, High Speed 14 Transistor CMOS Full Adder Cell with 50% Improvement in Threshold Loss Problem

DESIGN OF EXTENDED 4-BIT FULL ADDER CIRCUIT USING HYBRID-CMOS LOGIC

Impact of Logic and Circuit Implementation on Full Adder Performance in 50-NM Technologies

LOW POWER NOVEL HYBRID ADDERS FOR DATAPATH CIRCUITS IN DSP PROCESSOR

Gdi Technique Based Carry Look Ahead Adder Design

Enhancement of Design Quality for an 8-bit ALU

Two New Low Power High Performance Full Adders with Minimum Gates

Two New Low Power High Performance Full Adders with Minimum Gates

A NOVEL 4-Bit ARITHMETIC LOGIC UNIT DESIGN FOR POWER AND AREA OPTIMIZATION

Design and Simulation of Novel Full Adder Cells using Modified GDI Cell

A New High Speed - Low Power 12 Transistor Full Adder Design with GDI Technique

CHAPTER 6 GDI BASED LOW POWER FULL ADDER CELL FOR DSP DATA PATH BLOCKS

Energy Efficient Full-adder using GDI Technique

Design and Analysis of CMOS based Low Power Carry Select Full Adder

Power Efficient adder Cell For Low Power Bio MedicalDevices

DESIGN OF HIGH EFFICIENT AND LOW POWER MULTIPLIER

A Low Power Array Multiplier Design using Modified Gate Diffusion Input (GDI)

Implementation of Carry Select Adder using CMOS Full Adder

A Low-Power 12 Transistor Full Adder Design using 3 Transistor XOR Gates

Design of GDI Based Power Efficient Combinational Circuits and Comparison with Other Logic Styles

Minimization of Area and Power in Digital System Design for Digital Combinational Circuits

Implementation of 1-bit Full Adder using Gate Difuision Input (GDI) cell

Design of New Full Swing Low-Power and High- Performance Full Adder for Low-Voltage Designs

Analysis of Different CMOS Full Adder Circuits Based on Various Parameters for Low Voltage VLSI Design

ADVANCES in NATURAL and APPLIED SCIENCES

DESIGN AND ANALYSIS OF LOW POWER 10- TRANSISTOR FULL ADDERS USING NOVEL X-NOR GATES

Low-Power High-Speed Double Gate 1-bit Full Adder Cell

Analysis of Different Full Adder Designs with Power using CMOS 130nm Technology

International Journal of Scientific & Engineering Research, Volume 4, Issue 8, August ISSN

A Efficient Low-Power High Speed Digital Circuit Design by using 1-bit GDI Full Adder Circuit

Investigation on Performance of high speed CMOS Full adder Circuits

Implementation of Efficient 5:3 & 7:3 Compressors for High Speed and Low-Power Operations

DESIGN OF PARALLEL MULTIPLIERS USING HIGH SPEED ADDER

Pardeep Kumar, Susmita Mishra, Amrita Singh

POWER DELAY PRODUCT AND AREA REDUCTION OF FULL ADDERS USING SYSTEMATIC CELL DESIGN METHODOLOGY

Power Efficient Arithmetic Logic Unit

Design and Analysis of Low-Power 11- Transistor Full Adder

High Performance Low-Power Signed Multiplier

Full Adder Circuits using Static Cmos Logic Style: A Review

Low power high speed hybrid CMOS Full Adder By using sub-micron technology

Design & Analysis of Low Power Full Adder

Design and Simulation of 32-Bit Carry-Ripple Adder using HSPICE and Mentor Graphics

Design of Low Power High Speed Hybrid Full Adder

OPTIMIZATION OF LOW POWER ADDER CELLS USING 180NM TG TECHNOLOGY

Comparison of High Speed & Low Power Techniques GDI & McCMOS in Full Adder Design

Design of Two High Performance 1-Bit CMOS Full Adder Cells

A Low-Power High-speed Pipelined Accumulator Design Using CMOS Logic for DSP Applications

Low Power 32-bit Improved Carry Select Adder based on MTCMOS Technique

An Efficient Advanced High Speed Full-Adder Using Modified GDI Technique

High Speed NP-CMOS and Multi-Output Dynamic Full Adder Cells

DESIGN OF MULTIPLIER USING GDI TECHNIQUE

Design of Low power and Area Efficient 8-bit ALU using GDI Full Adder and Multiplexer

AREA OPTIMIZED ARITHMETIC AND LOGIC UNIT USING LOW POWER 1-BIT FULL ADDER

Design of 64-Bit Low Power ALU for DSP Applications

Design and Implementation of Complex Multiplier Using Compressors

CHAPTER - IV. Design and analysis of hybrid CMOS Full adder and PPM adder

Design of Low Power Flip Flop Based on Modified GDI Primitive Cells and Its Implementation in Sequential Circuits

PERFORMANANCE ANALYSIS OF A 1-BIT FULL ADDER USING 45nm TECHNOLOGY

Study of Threshold Gate and CMOS Logic Style Based Full Adders Circuits

Comparative Study on CMOS Full Adder Circuits

International Journal of Advanced Research in Biology Engineering Science and Technology (IJARBEST)

A new 6-T multiplexer based full-adder for low power and leakage current optimization

Performance Comparison of High-Speed Adders Using 180nm Technology

Low Power 8-Bit ALU Design Using Full Adder and Multiplexer

ISSN:

Design of Delay-Power Efficient Carry Select Adder using 3-T XOR Gate

2-BIT COMPARATOR WITH 8-TRANSISTOR 1-BIT FULL ADDER WITH CAPACITOR

Design of an Energy Efficient 4-2 Compressor

DESIGN OF 64 BIT LOW POWER ALU FOR DSP APPLICATIONS

Australian Journal of Basic and Applied Sciences. Optimized Embedded Adders for Digital Signal Processing Applications

Design of Low Power CMOS Adder, Serf, Modified Serf Adder

Keywords: VLSI; CMOS; Pass Transistor Logic (PTL); Gate Diffusion Input (GDI); Parellel In Parellel Out (PIPO); RAM. I.

Implementation of High Performance Carry Save Adder Using Domino Logic

Integration of Optimized GDI Logic based NOR Gate and Half Adder into PASTA for Low Power & Low Area Applications

A Novel Hybrid Full Adder using 13 Transistors

NOVEL 11-T FULL ADDER IN 65NM CMOS TECHNOLOGY

Power and Area Efficient CMOS Half Adder Using GDI Technique

Performance Analysis of High Speed CMOS Full Adder Circuits For Embedded System

/$ IEEE

Design and Analysis of Improved Sparse Channel Adder with Optimization of Energy Delay

POWER EFFICIENT CARRY PROPAGATE ADDER

Low Power 8-Bit ALU Design Using Full Adder and Multiplexer Based on GDI Technique

Circuit level, 32 nm, 1-bit MOSSI-ULP adder: power, PDP and area efficient base cell for unsigned multiplier

Design and Performance Analysis of High Speed Low Power 1 bit Full Adder

IC Layout Design of 4-bit Universal Shift Register using Electric VLSI Design System

PERFORMANCE ANALYSIS OF A LOW-POWER HIGH-SPEED HYBRID 1- BIT FULL ADDER CIRCUIT USING CMOS TECHNOLOGIES USING CADANCE

Low power 18T pass transistor logic ripple carry adder

Reduced Area & Improved Delay Module Design of 16- Bit Hamming Codec using HSPICE 22nm Technology based on GDI Technique

DESIGN OF CARRY SELECT ADDER WITH REDUCED AREA AND POWER

A High Performance Asynchronous Counter using Area and Power Efficient GDI T-Flip Flop

Design & Implementation of Low Power Error Tolerant Adder for Neural Networks Applications

Design Analysis of 1-bit Comparator using 45nm Technology

International Journal of Advance Research in Computer Science and Management Studies

& POWER REDUCTION IN FULL ADDER USING NEW HYBRID LOGIC V.

Transcription:

Research Paper A NOVEL GDI-MUX BASED LOW POWER-HIGH SPEED 1-BIT FULL ADDER P.Ponsudha, Dr. KR Santha Address for Correspondence Department of Electronics and Communication Engg, Velammal Engineering College, Surapet, Chennai, India. Department of Electrical and Electronics Engg, Sri Venkateswara College of Engineering, Sriperumbudur, Chennai, India. ABSTRACT In this work, a novel design for a 1-bit full adder featuring Gate Diffusion Input design technique (GDI) is presented. GDI technique is a power efficient technique for designing digital circuit as compared to most commonly used CMOS techniques. The new full adder is based on a novel Gate Diffusion Input- Multiplexer that generates full voltage swing output. Many of the previously reported full adders suffered from the problems of low swing and high noise when operated at low supply voltages. The proposed GDI MUX based 14 T full adder (GDI-MBA) operates at low voltage with excellent power consumption, signal integrity, driving capability, high speed and also provide full voltage swing. To evaluate the performance of the new GDI-MUX full adder, the design has been embedded in 16-bit ripple carry adder. The studied circuits are optimized for energy efficiency at 0.18 µm PD SOI CMOS process technology. The comparison between the new full adders with standard full adder cell shows an excessive improvement in terms of power, delay and power-delay-product. KEYWORDS Gate Diffusion Input Technique; GDI-MUX; Digital Signal Processing I. INTRODUCTION With the popularity of portable systems as well as fast growth of power density in integrated circuits, power dissipation becomes main design objectives equal to high performance of the system. Also the speed and power delay product has become an important design consideration with increasingly huge data sets and fabrication technology. The adder is one of the most critical component of a processor, as it is used in the arithmetic logic unit (ALU), floating-point unit, and for address generation in case of cache or memory access [3]. Based on addition some of the well known operations such as subtraction, multiplication, division are also mostly used in VLSI circuits. For VLSI designers, designing power efficient adders for digital system has become main goal. At the circuit level, an optimized design is desired to avoid any degradation in the output voltage, power consumption, delay in critical path, and be reliable even at low supply voltages when scaled towards deep sub micron technology. Good driving capability under different load conditions and balanced output to avoid glitches is also an important virtue. Since the full adder cells are duplicated in large numbers, layout regularity and interconnect complexity are also important [2]. A variety of full adder cells using different logic style have been used in the past such as CMOS, CPL and dynamic CMOS. Classical design of CMOS full adder is based on regular CMOS structure with conventional pull-up and pull-down transistor thus it provide full swing output and also obtain good driving capabilities. The demerits of CMOS circuit are its low mobility due to PMOS block as compared to NMOS block. To get the desired performance, PMOS should be sized up so that input capacitance is increased. Thus the speed of CMOS circuit is degraded [2]. Additionally the three major sources of power dissipation in a digital CMOS circuit are logic transition, short circuit and leakage current [5]. The complementary pass-transistor logic (CPL) style [1],[2] provides high speed, full-swing operation and good driving capability due to the presence of static inverters and cross-coupled PMOS transistor. The main drawback of CPL is the presence of lot of internal nodes and large power dissipation. The dynamic logic style is constructed with high mobility NMOS transistor only that increases the speed of the operation. The main problem exist in this logic style is charge sharing, lower noise immunity and it consumes a large portion of the power in driving the clock lines. The remaining design uses more than one logic style for their implementation. Based on the characteristics of digital VLSI design, some novel concepts and design techniques have been proposed in literature. These designs exploit the feature of GDI technique to improve the performance of the full adder cells. Generally, the main focus of this logic style is to reduce the number of transistors in the adder cell and also to reduce the power consumption. Gate Diffusion Input technique is a new technique for low power combinational circuits. Also this technique overcomes the drawback of remaining logic style. These techniques reduce power consumption, delay and the area of digital circuit while maintaining low complexity of logic design [3]. A library of full-adder cells is developed and presented to the circuit designers to pick the fulladder cell that satisfies their specific applications. Performance comparison with conventional standard full adder is presented. To reduce the number of transistor, GDI-MUX based cell is used to implement the 1-bit full adder. The goal of this work is to enhance the performance of 1-bit full adder. Generally Ripple Carry Adders are used among all types of adders because of its compact design. In this work, it is demonstrated that how this GDI can be used to facilitate the adder design issues. Section II is a comparative analysis of different types of full adder circuit. Section III is the brief description of Gate Diffusion Input Circuits. The proposed full adder cell provides low power delay product, full voltage swing and excellent driving capabilities. Section IV, presents the simulation environment setup and results. Section V concludes the paper. II. REVIEW OF FULL ADDER CIRCUITS Full adder is an essential component for the design and development of all types of processors viz. digital signal processors, microprocessors etc. Full adders are present on every microchip or any machine to perform addition, subtraction, division and multiplication. The full-adder circuit adds three

one-bit binary numbers, Augends (A), Addend (B) and carry in (C in ). The circuit produces a two one-bit binary output, a sum (S) and a carryout (C out ). The truth table of full adder with three inputs (A, B and Cin) and two outputs (Sum, Cout) is shown in the table 1. Table 1Truth Table of Full Adder Input Output A B C in Sum C out 0 0 0 0 0 0 0 1 1 0 0 1 0 1 0 0 1 1 0 1 1 0 0 1 0 1 0 1 0 1 1 1 0 0 1 1 1 1 1 1 A Full adder can be implemented in two levels they are transistor level and gate level. In gate level a full adder can be constructed from two half adders by connecting A and B to the input of one half adder, connecting the sum from that to an input of the second adder, connecting C in to the other input and finally OR the two carry outputs. The architecture of gate level half adder based full adder is shown in the Fig: 1. Depending on the type and number of used for implementation, the performance of half and full adders change accordingly. If more number of gates is used, then the circuit noise level, delay and area requirement is increased. Similarly, if less numbers of gates are used then the noise, delay and area requirement will be reduced. In the gate level full adder design sum and carry out output are obtained by the equation (1) and (2) Sum=ABCin+A B Cin+A BCin +AB Cin (1) Cout=AB+ACin+BCin (2) Fig:1 Architecture of Basic Full Adder The transistor level design at present is towards the implementation of CMOS, CPL, dynamic CMOS, Transmission Gate Full adder (TGA) or Transmission Function Full adder (TFA), 20T, 14T, 12T full adder circuits. Hence efforts are made in this work to design a novel GDI low-power multiplexer based 1- bit full adder, named GDI-MBA-14T. In this six identical GDI-Multiplexer with 12 transistors and one GDI-Inverter with 2 transistors, totally 14 transistors are used. Next topic discusses the comparisons of proposed full adder with standard existing full adder such as 14T, TGA and GDI-MUX full adder. 2.1. 14T FULL ADDER The hybrid-cmos logic design style full adder is 14T full adder. This adder contains a 4T Pass Transistor Logic, XOR gate, an inverter and two transmission gates based multiplexer designs for sum and Cout signals[11]. The power consumption of 14T is reduced by decreasing the transistors count, about 50% compared with conventional 28T CMOS full adder. The circuit diagram of 14T full adder is shown in the Fig: 2. The circuit has 4 transistors XOR, which in the next stage is inverted to produce XNOR. These XOR and XNOR are used simultaneously to generate sum and Cout output. Fig: 2 14T Full Adder The sum output is formed by multiplexer controlled by (A B) and its complement, input for this multiplexer is Cin and Cin. Similarly the Cout can be calculated by multiplexing A and Cin controlled by (A B). The circuit is simpler than the conventional adder. The number of transistors and number of power dissipating nodes has been reduced. The power dissipation in this circuit is more than the standard CMOS adders. 2.2. 20 T TRANSMISSION GATE FULL ADDER The Transmission gate logic style based on the transmission -function theory and transmission gates. Also the transmission gate logic circuit is a special kind of pass-transistor logic circuit. It produces buffered proper polarity output for both sum and carry, with the disadvantage of high power consumption. The circuit diagram is shown in Fig: 3. Transmission gate consists of a PMOS transistor and an NMOS transistor that are connected in parallel, which is a particular type of pass-transistor logic circuit. Both PMOS and NMOS provide the path to the input logic 1 or 0 respectively when they turned on simultaneously. Thus, there is no voltage drop at output node, but it requires twice the number of transistors to design similar function. In this full adder circuit 2 inverters are followed by two transmission gates which act as 8-T XOR. Subsequently 8-T XNOR module follows. Fig: 3 20T Transmission Gate Full Adder To generate sum; Cin and Cin are multiplexed which can controlled either by (A B) or (A B) and the Cout output can be calculated by multiplexing A and Cin which is controlled by (A B). It is the fastest adder. The circuit is simpler than the conventional adder. The power dissipation in this circuit is more than the 28T adder. The main disadvantage of these logic styles is lack in driving capability. This is attributed to the fact that the inputs are coupled to the outputs. When TGA or TFA are cascaded, their

performance degrades significantly [IEEE 2006]. In the case of transmission gate circuit, cascading n full adders leads to an overall propagation delay roughly proportional to n 2, which becomes excessive for long chains of full adders [6]. 2.3. GDI-MUX FULL ADDER This full adder design approach eliminates the need for XOR-XNOR gates. The circuit diagram of GDI- MUX full adder is shown in the figure 5. GDI is suitable for designing fast, Low-Power circuits, using a reduced number of transistors while improving logic level swing and static power characteristics. Without Xor-Xnor a new full adder is introduced. From the truth table of full adder (table 1) it is seen that Cout =AB when Cin=0 and Cout=A+B when Cin=1. Thus a multiplexer, OR and AND gates can be used to obtained the Cout output. The SUM= A+B+Cin when Cout=0 and Sum=AB Cin when Cout=1. Here Cout can be used to determine the required sum output. has to be included in this design. Thus the number of transistor required for this design is increased. III. GATE-DIFFUSION-INPUT CIRCUITS The GDI method [3][7][8] is based on the use of a simple cell as shown in Fig: 6. Each GDI cell was implemented using two transistors. The basic GDIcell resembles the standard CMOS inverter, but there are some important differences: GDI cell contains three inputs G (the common gate input of the NMOS and PMOS transistors), P (input to the outer diffusion node of the PMOS transistor) and N (input to the outer diffusion node of the NMOS transistor). The Out node (the common diffusion of both transistors) may be used as input or output port, depending on the circuit structure. Fig: 4 GDI-MUX Full Adder Fig: 5 The input and Output Waveform of GDI-MUX full adder Six modules are used in this design. Module 1 and module 4 will perform the OR operation. Module 2 and module 5 will perform the AND operation. Finally the implementation of multiplexer is achieved through module 3 and module 6. The main drawback of this circuit is its leakage current and also lack in driving capability which is necessary in a cascaded situation. The input and output waveforms of GDI- MUX full adder is shown in the Fig. 5. Full swing output is not obtained by this GDI-MUX full adder. To eliminate this fluctuation ultra low power diode Fig. 6 GDI basic cell Table 1 shows how a simple change of the input configuration of the simple GDI cell corresponds to very different Boolean functions. Most of these functions require a complex (6-12 transistors) gate in CMOS (as well as in standard PTL implementations), but are very simple (only two transistors per function) in the GDI design methodology. GDI enables simpler gates, lower transistor count, and lower power dissipation. Multiple-input gates can be implemented by combining several GDI cells. The buffering constrains, due to possible VT drop are described in detail in [8], as well as the technological compatibility with CMOS. The bulk of both NMOS and PMOS are linked to N or P, so it can be arbitrarily being biased at contrast to a CMOS inverter. Table 2 Truth Table of the basic GDI cell. N P G OUT Function 0 B A A B F1 B 1 A A +B F2 1 B A A+B OR B 0 A AB AND C B A A B+AC MUX 0 1 A A NOT The fact that no GDI cell contains full VDD- GND supply so it consume power only through input, as GDI cells are fed only by the previous circuits. 3.1 THE PROPOSED GDI-MUX FULL ADDER GDI is suitable for designing fast, Low-Power circuits, using a reduced number of transistors while improving logic level swing and static power characteristics.[1] In this section a new approach for designing full adder cell eliminating the need for complicated XOR-XNOR gates. In the second step the implementation of this ultra low power circuit using GDI technique is discussed. Fig. 7 The proposed MUX logic block for SUM output

SUM Output: By considering the full adder truth table 1, it can be seen that Sum is equal to Cin when A B+AB =1 similarly Sum is equal to Cin when A B+AB =0. So two GDI multiplexer is used to obtain sum output. Sum output obtained by two 2:1 mux logic block is shown in the Fig: 7. The control input for first 2:1 mux is A and two input is B and B. So the output of first mux is F shown in the equation (3). Then F is the control input for second mux and two inputs is C and C. So the final SUM output is shown in the equation (4) F=A B+AB (3) Sum = ((A B+AB )) C + (A B+AB )C (4) After simplification above equation become Sum = ABC+A B C+A BC +AB C (5) Sum = m(1,2,4,7) (6) Thus the final Sum output in term of sum of product is expressed in the equation (6). The complemented value of B and C is given as input to 2 GDI-MUX that value is obtained from GDI-Inverter. Carry Output: By considering the full adder truth table 1 Cout is equal to A when Cin=A=0, Cout is equal to B when Cin=1 & A=0, Cout is equal to Cin when B=0 & A=1 and Cout is equal to A when B=A=1. Thus three GDI multiplexer is used to obtain Carry output. The Cout obtained by three 2:1 mux logic block is shown in the Fig: 8. The control input for first 2:1 mux is C and two input is A and B. So the output of first mux is F1 shown in the equation (7). The control input for second 2:1 mux is B and two input is C and A. So the output of the second mux is shown in the equation (8). The control input for third 2:1 mux is A and two input is F1 and F2. So the Carry output is shown in the equation (9). F1=C A+CB (7) F2=B C+BA (8) Cout = A (C A+CB)+A(B C+BA) (9) After the simplification the final carry output become Cout=A BCin+AB Cin+ABCin +ABCin (10) Thus the final Cout output in terms of sum of product is expressed in the equation (10). full adder exhibits different power consumption, speed, area, and driving capability. Four realistic circuit structures that include adder cells are used for simulation. The four circuits 14T, 20T, GDI-MUX and proposed GDI-MUX are prototyped and simulated using the TSMC 0.18 µm CMOS process. Fig.9 Proposed GDI-MUX Full adder Fig. 8 The proposed GDI-MUX logic block for Carry output The circuit diagram of proposed GDI-MUX full adder is sown in the Fig: 9. The full swing output voltage is obtained by this proposed GDI-MUX full adder, without any additional ultra low power diode as it required for previously reported full adder [1]. Thus the number of transistor required for design is considerably reduced. The input output waveform of proposed GDI-MUX full adder is shown in the Fig. 10. IV. SIMULATION RESULTS AND ANALYSIS The adder cell is anatomized into smaller modules. The modules are studied and evaluated extensively. Several designs of each of them are developed, prototyped, simulated and analyzed. Each of these Fig.10 The input and output Waveform of Proposed GDI-MUX Full Adder For each simulation circuit simulator will generate average power consumptions. The circuits simulated at supply voltages range from 0.8V to 5V. The operating frequency is set at 100 MHZ. The power consumption at supply voltage range from 0.8V to 5V of 14T, TGFA, GDI-MUX, Proposed GDI-MBA is listed in table 3. In this paper the power dissipation and propagation delay are measured for different full adders. The product of the power and delay values gives the power delay product, which shows the resistance value it, is having. Pd=(Id*Vdd)+(CL*F*Vdd2) (11) Among the remaining previously reported full adders, the least delay obtained by proposed full adder because of GDI-MUX is used to produce internal signals. For each transition, the delay is measured from 50% of the input voltage swing to 50% of the output voltage swing. The Propagation delay at supply voltage range from 0.8V to 5V of 14T, TGFA, GDI-MUX, Proposed GDI-MBA are listed in table 4

Table 3: Power Dissipation (µw) for full adder circuits in 0.18µm with different supply voltage Power Consumption (µw) Logic Style 0.8 1.2 2.5 5 14 T 0.1997 0.436 1.797 1.95 TGA 0.0104 0.66 0.142 1.64 GDI-MUX 0.2099 0.69 12.38 20 Proposed GDI- MBA 0.0077 0.0076 0.026 0.299 Table 4 : Propagation Delay (ns) for full adder circuits in 0.18µm with different supply voltage Propagation Delay (ns) Logic Style 0.8 1.2 2.5 5 14 T 24.995 24.995 24.995 24.995 TGA 24.98 24.98 24.98 24.98 GDI-MUX 11.818 11.515 24.98 7.57 Proposed GDI- MBA 0.237 0.518 6.7 - The proposed full adder obtained minimal power delay product. For each transition, the power delay is measured from product of power consumption and propagation delay. The Power delay product at supply voltage range from 0.8V to 5V for 14T, TGFA, GDI-MUX, Proposed GDI-MBA is listed in table 5. The Power consumption, delay and Power Delay Product for full adder circuits in 0.18µm with 2.5 V are listed in the table 6. Table 5: Power Delay Product *10-15 J for full adder circuits in 0.18µm with different supply voltage Power Delay Product *10-15 J Logic Style 0.8 1.2 2.5 5 14 T 4.991502 10.89782 44.91602 38.87702 TGA 0.259792 16.4868 3.54716 40.9672 GDI-MUX 2.480598 7.94535 309.2524 151.4 Proposed GDI-MBA 0.001825 0.003937 0.1742 0 In order to have a practical application for the proposed circuit, the suggested structure for simulation, which is made of 16 cascaded full adder cells, is shown in fig. This structure simulates the circuits like regular multipliers and binary adders that use full adder cells as the building block. The inputs are fed from the buffers to give proper loading condition. An input transition may or may not result in change at the output node. Some internal node may be switching which results in power consumption. Table 6: Power consumption, delay and Power Delay Product for full adder circuits in 0.18µm with 2.5 V Power Power Transis Consum Delay Delay Logic Style tor ption (ns) Product Count (µw) (10-15 J) 14 T 1.797 24.995 44.92 14 TGA 0.142 24.98 3.55 20 GDI-MUX 12.38 24.98 309.25 28 Proposed 0.026 6.7 0.17 14 GDI-MBA For an accurate result, all the required input patternto-pattern transitions are included in the test patterns. It is possible to create a logical circuit using multiple full adders to add N-bit numbers. Each full adder inputs a C in, which is the C out of the previous adder. The layout of a ripple-carry adder is simple, which allows for fast design time. The power consumption and delay are measured for the whole 16 bit adder. Comparisons of 16-bit ripple carry adder using different full adder cells is shown in the table 7 with supply voltage 2.5V. Table 7: Simulation Result for 16-bit RCA using different full adders in 0.18µm with supply voltage as 2.5V Logic Style PC (µw) Delay (ns) PDP (10-15 J) Transisto r Count 14 T 29.5 2.5 73.7 224 TGA 198.7 24.996 4965.0 320 GDI- MUX 445.24 112.66 50160.7 448 Proposed GDI- MBA 0.3589 16.75 5.92 224 V CONCLUSION In this paper, the concept of Proposed GDI-MBA 14T full adder is introduced in VLSI design. This new full adder design successfully operates at low voltages with tremendous signal integrity and good driving capability. Among all the design techniques, proposed GDI-MBA full adder proves to have the minimal number of transistor, power and Power delay product. The GDI adder cell has been divided into two constituting modules one is to give sum output and another module give carry output. Adder cells are implemented and simulated using 0.18 µm CMOS process. The performance of this proposed GDI-MBA presents 57%, 86% and 90% of power reduction when compared to other logic families. More work is required in the automation of a logic design methodology based on GDI cells. REFERENCES 1. Vahid Foroutan, Mohammad Reza, Keivan Navi, Arash Mazreah, Design of two Low-Power full adder cells using GDI structure and hybrid CMOS logic style, Integration, the VLSI journal, 47(2014)48-61. 2. Sumeer Goel, Ashok Kumar, Magdy A.Bayoumi, Design of Robust, Energy-Efficient Full Adders for Deep-Submicrometer Design using Hybrid-CMOS Logic Style, IEEE Transactions on very large scale integration systems, VOL.14, No. 12, Dec 2006. 3. Arkadiy Morgenshtein, Alexander Fish, and Israel A.Wagner, Gate-Diffusion Input (GDI): A Power- Efficient Method for Digital Combinatorial Circuits, IEEE Transactions on very large scale integration systems, VOL.10, No. 5, OCT 2002. 4. Ning Zhu, Wang Ling Goh, Weija Zhang, Kiat Seng Yeo, and Zhi Hui Kong, Design of Low-Power High- Speed Truncation-Error-Tolerant Adder and Its Application in Digital Signal Processing, IEEE Transactions On Very Large Scale Integration (VLSI) Systems, Vol. 18, no 8, PP. 1225-1229, Aug 2010. 5. Yingtao Jiang, Abdulkarim Al-Sheraidah, Yuke Wang, Edwin Sha and Jin-Gyun Chung A Novel Multiplexer- Based Low-Powewr Full adder, IEEE Transaction on Circuits and System-II Vol. 51,No.7, July 2004 6. Ahmed M. Shams, Tarek K. Darwish and Magdy Performance Analysis of Low Power 1-Bit CMOS Full Adder Cells IEEE Transactions on VLSI Systems, Vol.10, No. 1 Feb 2002. 7. A.P Chandrakasan and R.W Brodersen, Minimizing power consumption in digital CMOS circuits, proc.ieee, Vol.83,pp.498-523. Apr.1995 8. A.P Chandrakasan and S.Sheng, and R.W Brodersen, Low-Power CMOS digital design. IEEE J.Solid-state Circuits, Vol.27, PP 473-484. Apr 1992. 9. K.Navi,M.H.Moaiyeri,R.FaghihMirzaee,O.Hashemipou r,b.mazloomnezhad, Two new low power full adders based on majority-not gates,microelectronics Journal (Elsevier), 40,126 130. 10. M.H.Moaiyeri, R.FaghihMirzaee, K.Navi, T.Nikoubin,O.Kavehei, Noveldirect designs for3-input XOR function for low power and high-speed applications, International Journal of Electronics (TaylorandFrancis) 97(6)(2010)647 662. 11. K. Navi,M. Maeen,V.Foroutan, S.Timarchi, O.Kavehei, Anovel low power full-adder cell for low voltage, Integration the VLSI Journal (Elsevier) 42(4) (2009)457 467.

12. M. Alioto, G.Palumbo, Analysis and comparison of the full adder block, IEEE Transactionson VLSI10(6)(2002)806 823. 13. R. Shalem,E.John,L.K.John, A novel low-power energy recovery full adder cell, in : Proceedings of the Great Lakes Symposium on VLSI, February1999, pp. 380 383. 14. R.X. Gu,M.-I.Elmasry, Power dissipation analysis and optimization of deep submicron CMOS digital circuits, IEEEJournalofSolid-StateCircuits31(5) (1996)707 713. 15. C.H. Chang,J.Gu,M.Zhang,A review of 0.18um fulladder performances for tree structure arithmetic circuits, IEEE Transactions on Very Large Scale Integration (VLSI) Systems 13(6)(2005). 16. T. Callaway and E. Swartzlander, Jr., Low power arithmetic components, IEEE in Low Power Design Methodologies. Norwell, MA: Kluwer, 1996, pp. 161 201. 17. A.Chandrakasan,"Low-power CMOS digital design," IEEE JSSC, vol.27, pp.473-484, Apr.1992. 18. Ahmed M. Shams and Magdy A. Bayoumi, A New Full Adder Cell for low-power Applications, Proceedings of the IEEE Great Lakes Symposium on VLSI, 1998, pp. 45-49. 19. JohnRabaey, Digital integrated circuits, Second Edison, 2003. 20. K. P. Parhi, Fast Low-Energy VLSI Binary Addition, Proceedings of the International Conference on Computer Design, 1997, pp.676-684. 21. Gerard M. Blair, Designing low power CMOS, IEEE Electronics & Communication Engineering Joumal, vol. 6, pp. 229-236, October 1994.