v2.418 Typical Applications The HMC797A is ideal for: Test Instrumentation Military & Space Fiber Optics Functional Diagram Features High P1dB Output Power: +29 dbm High Psat Output Power: +31 dbm High : db High Output IP3: 41 dbm Supply Voltage: + V @ 4 ma Ohm Matched Input/Output Die Size: 2.89 x 1. x.1 mm General Description The HMC797A is a GaAs MMIC phemt Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides db of gain, +29 dbm of output power at 1 db gain compression, +31 dbm of saturated output power, and 23% PAE while requiring 4 ma from a + V supply. With up to +41 dbm of output IP3, the HMC797A is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 to 2 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797A amplifier I/Os are internally matched to Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two. mm (1 mil) wire bonds of minimal length.31 mm (12 mils). Electrical Specifications, T A = + C, Vdd = +V, Vgg2 = +3.V, Idd = 4 ma* Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - - 18 18-22 GHz 13 14. 13. 14 16 db Flatness ±. ±.7 ±.4 db Variation Over Temperature.7.8. db/ C Input Return Loss 16 17 db Output Return Loss 17 17 db Output Power for 1 db Compression (P1dB) 27 29 27 29 26. 29 dbm Saturated Output Power (Psat) 31 31 31. dbm Output Third Order Intercept (IP3) *Measurement taken at Pout/Tone = + 18 dbm 42 41 4 dbm Noise Figure 3. 3 3. db Supply Current (Idd) 4 4 4 ma Supply Voltage (Vdd) 8 11 8 11 8 11 V *Adjust Vgg1 between -2 to V to achieve Idd = 4 ma typical, Vgg1 = -.6V Typical to achieve Idd = 4 ma. 1 For Information price, furnished delivery, by Analog and to Devices place is orders: believed to Analog be accurate Devices, and reliable. Inc., However, One Technology For price, Way, delivery, P.O. Box and 96, to place Norwood, orders: Analog MA 262-96 Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other Phone: 781-9-47 Order online at One www.analog.com Technology Way, P.O. Box 96, Norwood, MA 262-96 rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any Phone: 781-9-47 Order online at www.analog.com Application patent or patent Support: rights of Analog Phone: Devices. 1-8-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-8-ANALOG-D
v2.418 Broadband & Return Loss RESPONSE (db) 2 - - - -2-2 vs. Temperature GAIN (db) 18 16 14 12 8 S21 S11 S22 6 Low Frequency & Return Loss RESPONSE (db) 2 - - - -2 - - -.1 1 vs. Vdd GAIN (db) 18 16 14 12 8 S21 S11 S22 FREQUENCY (MHz) 8V 9V V 11V 6 vs. Idd 18 Input Return Loss vs. Temperature GAIN (db) 16 14 12 ma ma 4mA RETURN LOSS (db) - - - 8-2 6 - For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 2
v2.418 Input Return Loss vs. Vdd Input Return Loss vs. Idd RETURN LOSS (db) - - - -2 8V 9V V 11V - Output Return Loss vs. Temperature RETURN LOSS (db) - - - -2 - RETURN LOSS (db) - - - -2 - Output Return Loss vs. Vdd RETURN LOSS (db) - - - -2 8V 9V V 11V ma ma 4mA - Output Return Loss vs. Idd Reverse Isolation vs. Temperature RETURN LOSS (db) - - - ma ma 4mA ISOLATION (db) - -2 - -4 - -2-6 - -7 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v2.418 Noise Figure vs. Temperature NOISE FIGURE (db) 9 8 7 6 4 3 2 1 2 4 6 8 12 14 16 18 2 22 Low Frequency P1dB vs. Temperature P1dB (dbm) 26 22.3..8 1 1.3 1. Noise Figure vs. Idd NOISE FIGURE (db) 9 8 7 6 4 3 2 1 2 4 6 8 12 14 16 18 2 22 P1dB vs. Temperature P1dB (dbm) 26 ma ma 4mA 22 P1dB vs. Vdd P1dB vs. Idd P1dB (dbm) 26 P1dB (dbm) 26 8V 9V V 11V ma ma 4mA 22 22 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 4
v2.418 Low Frequency Psat vs. Temperature 34 Psat vs. Temperature 34 Psat (dbm) 26 22.3..8 1 1.3 1. Psat vs. Vdd Psat (dbm) 34 26 8V 9V V 11V 22 Psat (dbm) 26 22 Psat vs. Idd Psat (dbm) 34 26 ma ma 4mA 22 Power Compression @ 2 GHz Power Compression @ GHz 27 46 Pout (dbm), GAIN (db), PAE (%) 2 Pout PAE Idd 7 487 467 447 427 47 Idd (ma) Pout (dbm), GAIN (db), PAE (%) 2 Pout PAE Idd 449 438 427 416 4 394 Idd (ma) 387 2 4 6 8 12 14 16 18 2 INPUT POWER (dbm) 383 2 4 6 8 12 14 16 18 2 INPUT POWER (dbm) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v2.418 Power Compression @ 22 GHz 36 2 PAE @ Psat vs. Frequency Pout (dbm), GAIN (db), PAE (%) 2 16 12 8 4 Pout PAE 2 4 6 8 12 14 16 18 2 INPUT POWER (dbm) Power Dissipation @ 8 C POWER DISSIPATION (W) 4. 4 3. 3 2. 2GHz 4 GHz 8 GHz 12 GHz 16 GHz 2 GHz 22 GHz 2 2 4 6 8 12 14 16 18 2 22 INPUT POWER (dbm) Idd 49 47 46 44 4 4 4 38 Idd (ma) PAE (%) (db), P1dB (dbm), Psat (dbm) 2 & Power vs. Vdd @ 2 GHz 2 P1dB Psat 8 9 11 Vdd (V) & Power vs. Vdd @ GHz & Power vs. Vdd @ 22 GHz (db), P1dB (dbm), Psat (dbm) 2 P1dB Psat (db), P1dB (dbm), Psat (dbm) 2 P1dB Psat 8 9 11 Vdd (V) 8 9 11 Vdd (V) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 6
v2.418 & Power vs. Idd @ 2 GHz & Power vs. Idd @ GHz (db), P1dB (dbm), Psat (dbm) (db), P1dB (dbm), Psat (dbm) 2 2 P1dB Psat 34 36 38 4 Idd (ma) & Power vs. Idd @ 22 GHz P1dB Psat 34 36 38 4 Idd (ma) (db), P1dB (dbm), Psat (dbm) Output IP3 vs. Temperature @ Pout = +18 dbm / Tone IP3 (dbm) 2 46 44 42 4 38 36 34 P1dB Psat 34 36 38 4 Idd (ma) Output IP3 vs. Vdd @ Pout = 18 dbm / Tone 46 44 42 Output IP3 vs. Idd @ Pout = 18 dbm / Tone 46 44 42 IP3 (dbm) 4 38 36 34 8V 9V V 11V IP3 (dbm) 4 38 36 34 ma ma 4 ma 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v2.418 Output IM3 @ Vdd = 8 V 7 Output IM3 @ Vdd = 9 V 7 IM3 (dbc) 6 4 2 2GHz 6GHz GHz 14GHz 18GHz 22GHz 12 14 16 18 2 22 Pout/TONE (dbm) Output IM3 @ Vdd = V IM3 (dbc) 7 6 4 2 2GHz 6GHz GHz 14GHz 18GHz 22GHz 12 14 16 18 2 22 Pout/TONE (dbm) IM3 (dbc) 6 4 2 2GHz 6GHz GHz 14GHz 18GHz 22GHz 12 14 16 18 2 22 7 6 4 2 Pout/TONE (dbm) Output IM3 @ Vdd = 11 V IM3 (dbc) 2GHz 6GHz GHz 14GHz 18GHz 22GHz 12 14 16 18 2 22 Pout/TONE (dbm) OIP2 vs. Temperature @ Pout = +18 dbm / Tone IP2 (dbm) 6 4 4 2 OIP2 vs. Vdd @ Pout = +18 dbm / Tone IP2 (dbm) 6 4 4 2 8V 9V V 11V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 8
v2.418 OIP2 vs. Idd @ Pout = +18 dbm / Tone IP2 (dbm) Second Harmonics vs. Vdd @ Pout = + 18dBm SECOND HARMONIC (dbc) 6 4 4 2 4 2 ma ma 4 ma 8V 9V V 11V FREQUENCY(GHz) Second Harmonics vs. Temperature @ Pout = + 18dBm SECOND HARMONIC (dbc) Second Harmonics vs. Idd @ Pout = + 18dBm SECOND HARMONIC (dbc) 4 2 4 2 FREQUENCY(GHz) ma ma 4mA FREQUENCY(GHz) Second Harmonics vs. Pout Igg1 vs. RF Input Power.1 SECOND HARMONIC (dbc) 4 2 +dbm +12dBm +14dBm +16dBm +18dBm +2dBm Igg1 (ma). -. -.1 -. 2GHz 6GHz GHz 14GHz 18GHz 22GHz FREQUENCY(GHz) -.2 2 4 6 8 12 14 16 18 2 INPUT POWER (dbm) 9 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v2.418 Igg2 vs. RF Input Power Igg2 (ma) 2. 2 1. 1. -. 2GHz 6GHz GHz 14GHz 18GHz 22GHz -1 2 4 6 8 12 14 16 18 2 INPUT POWER (dbm) Idd vs. Vgg1 Representative of a Typical Device IDD (ma) 64 6 6 2 48 44 4 36 2 16 12 8 4-4 -1.6-1.4-1.2-1 -.8 -.6 -.4 Vgg1 (V) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v2.418 Absolute Maximum Ratings Reliability Information Drain Bias Voltage (Vdd) +12 Vdc Channel Temperature 17 C Gate Bias Voltage (Vgg1) -3 to Vdc Gate Bias Voltage (Vgg2) +2. V to (Vdd -. V) Continuous Pdiss (T= 8 C) (derate 63.7 mw/ C above 8 C) RF Input Power (RFIN) Output Load VSWR 7:1.73 W +27 dbm Storage Temperature -6 to C Operating Temperature - to +8 C ESD Sensitivity (HBM) Class 1A - Passed V Nominal Junction Temperature (T=8 C, Vdd = V) Thermal Resistance (channel to die bottom) 147.8 C.7 C/W Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only, functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 11 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v2.418 Outline Drawing This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area. Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the Packaging Information section on our website for die packaging dimensions. [2] For alternate packaging information contact Analog Devices, Inc. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS.31 3. TYPICAL BOND PAD IS.4 SQUARE 4. BOND PAD METALIZATION: GOLD. BACKSIDE METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE ±.2 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 12
v2.418 Pad Descriptions Pad Number Function Description Interface Schematic 1 RFIN 2 VGG2 4, 7 ACG2, ACG4 3 ACG1 RFOUT & VDD 6 ACG3 8 VGG1 This pad is DC coupled and matched to Ohms. Blocking capacitor is required. Gate control 2 for amplifier. Attach bypass capacitors per application circuit herein. For nominal operation +3.V should be applied to Vgg2. Low frequency termination. Attach bypass capacitors per application circuit herein. Low frequency termination. Attach bypass capacitors per application circuit herein. RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow MMIC Amplifier Biasing Procedure application note. Die Bottom GND Die bottom must be connected to RF/DC ground. 13 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v2.418 Assembly Diagram Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network with low resistance. NOTE 2: Optional Capacitors to be used if part is to be operated below 2MHz. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 14
v2.418 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Ohm Microstrip transmission lines on.127mm ( mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If.4mm ( mil) thick alumina thin film substrates must be used, the die should be raised.mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the.2mm (4 mil) thick die to a.mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is.76mm to.2 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting.2mm (.4 ) Thick GaAs MMIC.76mm (.3 ) RF Ground Plane Wire Bond.127mm (. ) Thick Alumina Thin Film Substrate Figure 1..2mm (.4 ) Thick GaAs MMIC.76mm (.3 ).mm (. ) Thick Moly Tab RF Ground Plane Wire Bond.4mm (. ) Thick Alumina Thin Film Substrate Figure 2. The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 8/2 gold tin preform is recommended with a work surface temperature of C and a tool temperature of 26 C. When hot 9/ nitrogen/hydrogen gas is applied, tool tip temperature should be 29 C. DO NOT expose the chip to a temperature greater than C for more than 2 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 4-6 grams. DC bonds of.1 (. mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 4- grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (.31 mm). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D
v2.418 Notes: For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 781-9-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D 16