N-Channel 3 V (-S) MOSFET SiSH4N 3.3 mm Top View PowerPAK -8SH 3.3 mm.9 mm 5 6 7 8 4 G Bottom View 3 S S S FEATURES TrenchFET power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 APPLICATIONS C/C converter - Notebook - POL PROUCT SUMMARY V S (V) 3 R S(on) max. () at V GS = V.6 R S(on) max. () at V GS = 4.5 V.8 Q g typ. (nc) I (A) 35 a, g Configuration Single G S N-Channel MOSFET ORERING INFORMATION Package PowerPAK -8 Lead (Pb)-free and halogen-free SiSH4N-T-GE3 ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source voltage V S 3 Gate-source voltage V GS ± V T C = 5 C 35 a, g Continuous drain current (T J = 5 C) T C = 7 C 35 I T A = 5 C 9 b, c A T A = 7 C 5 b, c Pulsed drain current I M 7 Avalanche current I L =. mh AS 35 Avalanche energy E AS 6 mj Continuous source-drain diode current T C = 5 C 43 I T S A = 5 C 3. b, c A T C = 5 C 5 Maximum power dissipation T C = 7 C 33 P T A = 5 C 3.8 b, c W T A = 7 C b, c Operating junction and storage temperature range T J, T stg -55 to +5 Soldering recommendations (peak temperature) d, e 6 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t s R thja 4 33 C/W Maximum junction-to-case (drain) Steady state R thjc.9.4 Notes a. Based on T C = 5 C b. Surface mounted on " x " FR4 board c. t = s d. See solder profile (www.vishay.com/doc?7357). The PowerPAK -8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 8 C/W g. Package limited S7-89-Rev. A, 5-ec-7 ocument Number: 75897 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiSH4N SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source breakdown voltage V S V GS = V, I = 5 μa 3 - - V V S temperature coefficient V S /T J - 4 - I = 5 μa V GS(th) temperature coefficient V GS(th) /T J - -6 - mv/ C Gate-source threshold voltage V GS(th) V S = V GS, I = 5 μa.5 -. V Gate-source leakage I GSS V S = V, V GS = ± V - - ± na V S = 3 V, V GS = V - - Zero gate voltage drain current I SS V S = 3 V, V GS = V, T J = 55 C - - 5 μa On-state drain current a I (on) V S 5 V, V GS = V 5 - - A rain-source on-state resistance a V GS = V, I = 9 A -.48.6 R S(on) V GS = 4.5 V, I = 6.6 A -.64.8 Forward transconductance a g fs V S = 5 V, I = 9 A - 8 - S ynamic b Input capacitance C iss - 7 - Output capacitance C oss V S = 5 V, V GS = V, f = MHz - 35 - pf Reverse transfer capacitance C rss - 4 - V S = 5 V, V GS = V, I = 9 A - 8 4 Total gate charge Q g - nc Gate-source charge Q gs V S = 5 V, V GS = 4.5 V, I = 9 A - 5.4 - Gate-drain charge Q gd - 4.6 - Gate resistance R g f = MHz -..4 Turn-on delay time t d(on) - 5 4 Rise time t r V = 5 V, R L =.5-3 Turn-off delay time t d(off) I A, V GEN = 4.5 V, R g = - 5 4 Fall time t f - 5 5 Turn-on delay time t d(on) - ns Rise time t r V = 5 V, R L =.5-5 Turn-off delay time t d(off) I A, V GEN = V, R g = - 5 4 Fall time t f - 5 rain-source Body iode Characteristics Continuous source-drain diode current I S T C = 5 C - - 3 Pulse diode forward current I SM - - 7 A Body diode voltage V S I S = A, V GS = V -.8. V Body diode reverse recovery time t rr - 5 5 ns Body diode reverse recovery charge Q rr I F = A, di/dt = A/μs, - 7 35 nc Reverse recovery fall time t a T J = 5 C - 3 - Reverse recovery rise time t b - - ns Notes a. Pulse test: pulse width 3 μs, duty cycle % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S7-89-Rev. A, 5-ec-7 ocument Number: 75897 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiSH4N TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 7 6 V GS =Vthru4V 8 T C = -55 C I - rain Current (A) 5 4 3 V GS =3V I - rain Current (A) 6 4 T C = 5 C T C = 5 C V GS =V..5..5..5 3...5..5..5 3. V S - rain-to-source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics. 8 C iss - On-Resistance (Ω) R S(on).8.6.4 V GS =4.5V V GS =V C - Capacitance (pf) 5 9 6 C oss 3. 3 4 5 6 7 I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage C rss 5 5 5 3 V S - rain-to-source Voltage (V) Capacitance - Gate-to-Source Voltage (V) 8 6 4 I = 9 A V S =5V V S =4V - On-Resistance (Normalized).8.6.4.. I =9 A V GS =V,4.5V V GS R S(on).8 6 8 4 3 Q g - Total Gate Charge (nc) Gate Charge.6-5 -5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S7-89-Rev. A, 5-ec-7 3 ocument Number: 75897 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiSH4N TYPICAL CHARACTERISTICS (5 C, unless otherwise noted).5 I =9 A - Source Current (A) I S T J =5 C T J =5 C - On-Resistance (Ω) R S(on)..9.6.3 T J = 5 C T J = 5 C...4.6.8.. V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage. 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.4 5. 4. (V) V GS(th).8.6 I = 5 µa Power (W) 3.4.. -5-5 5 5 75 5 5.. 6 T J - Temperature ( C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) () Limited by R S(on) I M limited µs - rain Current (A) I. I(on) limited T A =5 C Single pulse BVSS limited ms ms ms s s C.. V S - rain-to-source Voltage (V) () V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient S7-89-Rev. A, 5-ec-7 4 ocument Number: 75897 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiSH4N TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 8 6 5 6 I - rain Current (A) 4 Package Limited Power (W) 4 3 5 5 75 5 5 T C - Case Temperature ( C) Current erating a 5 5 75 5 5 T C - Case Temperature ( C) Power erating Note a. The power dissipation P is based on T J max. = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S7-89-Rev. A, 5-ec-7 5 ocument Number: 75897 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiSH4N TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance.. uty cycle =.5. Notes:. P M.5 t t t.. uty cycle, = t. Per unit base = R thja = 65 C/W 3. T JM - T A = P M Z (t) thja Single pulse 4. Surface mounted -4-3 - 6 Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Normalized Effective Transient Thermal Impedance. uty cycle =.5.. Single pulse.5.. -4-3 - - Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75897. S7-89-Rev. A, 5-ec-7 6 ocument Number: 75897 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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