Dual Color Emitting Diodes, 660 nm and 940 nm

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Dual Color Emitting Diodes, 660 nm and 940 nm FEATURES Package type: surface mount Package form: square PCB Dimensions (L x W x H in mm): x x 0.87 Peak wavelength: λ p = 660 nm and 940 nm High reliability High radiant power Angle of half intensity: ϕ = ± 60 Floor life: 68 h, MSL 3, according to J-STD-00 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance please see www.vishay.com/doc?999 DESCRIPTION is a dual color emitting device with 660 nm and 940 nm peak wavelength. The emitters are based on the SurfLight TM technology, providing high radiant power. APPLICATIONS Wearables Health monitoring Pulse oximetry PRODUCT SUMMARY COMPONENT COLOR I e (mw/sr) ϕ (deg) λ p (nm) t r (ns) Note Test conditions see table Basic Characteristics Red.3 660 ± 60.5 940 0 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Tape and reel MOQ: 3000 pcs, 3000 pcs/reel square PCB Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T amb = 5 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL COLOR VALUE UNIT Reverse voltage V R 5 V Red 70 Forward current I F 70 ma Red 40 Peak forward current t p /T = 0., t p = μs I FM 40 ma Red Surge forward current t p = μs I FSM A Red 6 Power dissipation P V 9 mw Junction temperature T j C Operating temperature range T amb -5 to +85 C Storage temperature range T stg -5 to +85 C Soldering temperature According fig. 0, J-STD-00 T sd 60 C Thermal resistance junction / ambient J-STD-05 R thja 390 K/W Rev..0, -Apr-6 Document Number: 8434

P V -Power Dissipation (mw) 80 60 40 0 80 60 40 0 R thja = 390 K/W I F - Forward Current (ma) 80 70 60 50 40 30 0 0 R thja = 390 K/W 0 0 0 40 60 80 0 0 0 40 60 80 Fig. - Power Dissipation Limit vs. Ambient Temperature Fig. - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T amb = 5 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL COLOR MIN. TYP. MAX. UNIT Red -.0.3 Forward voltage I F = 0 ma, t p = 0 ms V F -.4.7 V Red - -.3 - Temperature coefficient I F = 0 ma TK VF - -.3 - mv/k Reverse current I R not designed for reverse operation μa Junction capacitance V R = 0 V, f = MHz, Red - 7 - E = 0 mw/cm C J - 5 - pf Red.9.3 - Radiant intensity I F = 0 ma I e 0.8.5 - mw/sr Radiant power I F = 0 ma φe Red - 9.5 - - 8.5 - mw Angle of half intensity I F = 0 ma ϕ - ± 60 - deg Red 650 660 670 Peak wavelength I F = 0 ma λ p 90 940 960 nm Spectral bandwidth I F = 0 ma Δλ Red - 0 - - 40 - nm Red - 0. - Temperature coefficient of λ p I F = 0 ma TK λp - 0.3 - nm/k Red - 0 - Rise time I F = 0 ma t r - 0 - ns Red - 0 - Fall time I F = 0 ma t f - 0 - ns CCUIT BLOCK DIAGRAM 4 LED cathode RED 3 RED LED RED anode 3 RED LED RED cathode 4 LED anode Rev..0, -Apr-6 Document Number: 8434

BASIC CHARACTERISTICS (T amb = 5 C, unless otherwise specified) I F - Forward Current (ma) 0 0 t p = 0 ms I e - Radiant Intensity (mw/sr) 0 t p = 0 ms.0..4.6.8.0..4.6.8 3.0 V F - Forward Voltage (V) 0. 0 0 I F - Forward Current (ma) Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Radiant Intensity vs. Forward Current V F - Forward Voltage (V).0.00.80.60.40 I F = 0 ma t P = 0 ms.0-60 -40-0 0 0 40 60 80 I e, rel - Relative Radiant Intensity (%) 0 5 0 05 95 I F = 0 ma t p = 0 ms 90-60 -40-0 0 0 40 60 80 Fig. 4 - Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature V F, rel - Relative Forward Voltage (%) 5 0 05 95 I F = 0 ma t p = 0 ms 90-60 -40-0 0 0 40 60 80 I e, rel - Relative Radiant Intensity (%) 90 I F = 0 ma 80 70 60 50 40 30 0 0 0 550 650 750 850 950 050 λ - Wavelength (nm) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity vs. Wavelength Rev..0, -Apr-6 3 Document Number: 8434

I e, rel - Relative Radiant Intensity www.vishay.com 0 0 0.0 0.9 0.8 0.7 0.6 0.4 0. 0 94803-30 40 50 60 70 80 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement REFLOW SOLDER PROFILE ϕ - Angular Displacement DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-00: Moisture sensitivity: level 3 Floor life: 68 h Conditions: T amb < 30 C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-00 or label. Devices taped on reel dry using recommended conditions 9 h at 40 C (+ 5 C), RH < 5 %. 300 Temperature ( C) 50 00 50 55 C 40 C 7 C max. 0 s max. 60 C 45 C max. 30 s max. s max. ramp down 6 C/s 50 max. ramp up 3 C/s 0 0 50 50 00 50 300 984 Time (s) Fig. 0 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-00 Rev..0, -Apr-6 4 Document Number: 8434

PACKAGE DIMENSIONS in millimeters (0.6) 0.87 Top View Pinning cathode 4 anode 0.5 anode 3 cathode Technical drawings according to DIN specification Recommended Footprint 0.55 (4 x) ( x) 0.63 (4 x) 0.5 (4 x).5 Pin marking 0.5 (4 x) 0.05 (4 x).3 Drawing No.: 6.550-5347.0-4 Issue: ; 9.0.6 Not indicated tolerances ± 0. Rev..0, -Apr-6 5 Document Number: 8434

TAPE DIMENSIONS in millimeters (Ø.5) (4) Pin Y (Ø ) (.75) (3.5) (8) Y () (.3) Reel off direction (4) (0.5) Y - Y Technical drawings according to DIN specifications (.3) Drawing-No.: 9.700-5397.0-4 Issue: ; 9.0.6 (.5) Rev..0, -Apr-6 6 Document Number: 8434

REEL DIMENSIONS in millimeters 8.4 +.5 8.4 + 0.5 Ø 55 min. Ø 77.8 max. Z Form of the leave open of the wheel is supplier specific. Z : 4.4 max. Ø 3 + - 0. 0.5 Ø 0. min..5 min. Drawing-No.: 9.800-5096.0-4 Issue: 4; 08.03.06 technical drawings according to DIN specifications Rev..0, -Apr-6 7 Document Number: 8434

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