UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET

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UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET 1A, 3V N-CHANNEL POWER MOSFET DESCRIPTION The ULB4132 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * R DS(ON) =3.5mΩ @ V GS =1V, I D =5A * R DS(ON) = 4.2mΩ @ V GS =4.5V, I D =4A SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 ULB4132L-TA3-T ULB4132G-TA3-T TO-22 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 1 of 5 Copyright 211 Unisonic Technologies Co., Ltd

ABSOLUTE MAXIMUM RATINGS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 3 V Gate-Source Voltage V GSS ±2 V Drain Current Continuous I D 78 A Pulsed I DM 62 A Single Pulsed Avalanche Energy E AS 31 mj Single Pulsed Avalanche Current I AS 35 A Power Dissipation P D 83 W Junction Temperature T J +15 C Strong Temperature T STG -55 ~ +15 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 62.5 C/W Junction to Case θ JC 1.5 C/W ELECTRICAL CHARACTERISTICS (T J =25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = V, I D =25 µa 3 V Drain-Source Leakage Current I DSS V DS =3 V,V GS = V 1 µa Gate-Source Leakage Current I GSS V DS = V, V GS = ±2 V ±1 na Gate-Source Leakage Current Forward V GS =+2V, V DS =V +1 na I GSS Reverse V GS =-2V, V DS =V -1 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =1 µa 1.35 1.8 2.35 V V GS =1 V, I D =5 A 3.5 5.3 Static Drain-Source On-Resistance R DS(ON) V GS =4.5 V, I D =4 A 4.2 8 mω DYNAMIC PARAMETERS Input Capacitance C ISS 511 Output Capacitance C OSS V DS =15V, V GS =V, f=1.mhz 96 pf Reverse Transfer Capacitance C RSS 44 SWITCHING PARAMETERS Total Gate Charge Q G 36 54 V DS =15V, I D =32A, I G =3.33mA, Gate Source Charge Q GS 9.1 V GS =5V Gate Drain Charge Q GD 13 nc Turn-ON Delay Time t D(ON) 23 Turn-ON Rise Time t R V DD =15V, I D =32A, R G =1.8Ω 95 Turn-OFF Delay Time t D(OFF) V GS =1 V 25 ns Turn-OFF Fall-Time t F 36 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 15 A Maximum Body-Diode Pulsed Current I SM 62 A Drain-Source Diode Forward Voltage V SD I S =32 A,V GS = V 1 V UNISONIC TECHNOLOGIES CO., LTD 2 of 5

TEST CIRCUIT AND WAVEFORM UNISONIC TECHNOLOGIES CO., LTD 3 of 5

TYPICAL CHARACTERISTICS 1 Output Characteristics V GS =1,8,6,4V 5 Transfer Characteristics 8 6 4 V GS =3V 4 3 2 25 2 1 2 3 Drain to Source Voltage,V DS (V) 4 1 T J =125-55 1 2 3 4 5 Gate to Source Voltage,V GS (V) Normalized On-Resistance, RDS(ON) (Ohms) Normalized Gate-Source Threshold Voltage,VTH UNISONIC TECHNOLOGIES CO., LTD 4 of 5

TYPICAL CHARACTERISTICS(Cont.) V GS =V Body-Diode Characteristics 1 3 Maximum Safe Operating Area Source-Drain Current,IS (A) 1 2 1 1 1.4.6.8 1. 1.2 1.4 Body Diode Forward Voltage,V SD (V) 1 2 1 1 1 R DS(ON) Limited T C =25 T J =15 Single Pulse DC 1μs 1ms 1ms 1-1 1 1 1 1 2 Drain to Source Voltage,V DS (V) Normalized Thermal Transient Impedanc Curve Normalized Effective Transient Thermal Impedance,r(t) 1 1-1 1-2 D=.5.2.1.5.2.1 Single Pulse P DM t 1 1-5 1-4 1-3 1-2 1-1 1 1 1 Square Wave Pulse Duration (sec) t 2 1.R θjc (t)=r(t)*r θjc 2.R θjc =See Datasheet 3.T JM -T C =P*R θjc (t) 4.Duty Cycle,D=t 1 /t 2 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5