SOT666 Rev. 2 7 September 211 Product data sheet 1. Product profile 1.1 General description The is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias Internal switch to save external components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio 1.3 Applications Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage digital and analog television tuners professional communication equipment
1. Quick reference data 2. Pinning information Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage (DC) - - 6 V drain current (DC) - - 3 ma P tot total power dissipation T sp 19 C [1] - - 18 mw y fs forward transfer admittance f = 1 MHz amplifier A; =19mA 26 31 1 ms amplifier B; =13mA 28 33 3 ms C iss(g1) input capacitance at gate1 f = 1 MHz amplifier A - 2.2 2.7 pf amplifier B - 2. 2.5 pf C rss reverse transfer capacitance f = 1 MHz - 2 - ff NF noise figure amplifier A; f = MHz - 1.3 1.9 db amplifier B; f = 8 MHz - 1. 2.1 db Xmod cross-modulation input level for k = 1 % at db AGC amplifier A 1 15 - db V amplifier B 1 13 - db V T j junction temperature - - 15 C [1] T sp is the temperature at the soldering point of the source lead. Table 2. Discrete pinning Pin Description Simplified outline Symbol 1 gate1 (AMP A) 2 gate2 6 5 3 gate1 (AMP B) G1A drain (AMP B) 5 source G2 6 drain (AMP A) 1 2 3 AMP A DA S G1B AMP B sym89 DB All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 2 of 23
3. Ordering information. Marking Table 3. Ordering information Type number Package Name Description Version - plastic surface mounted package; 6 leads SOT666 Table. Marking codes Type number Marking code 2L 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 613). Symbol Parameter Conditions Min Max Unit Per MOSFET V DS drain-source voltage (DC) - 6 V drain current (DC) - 3 ma I G1 gate1 current - 1 ma I G2 gate2 current - 1 ma P tot total power dissipation T sp 19 C [1] - 18 mw T stg storage temperature 65 +15 C T j junction temperature - 15 C [1] T sp is the temperature at the soldering point of the source lead. 25 1aac193 P tot (mw) 2 15 1 5 5 1 15 2 T sp ( C) Fig 1. Power derating curve All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 3 of 23
6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-sp) thermal resistance from junction to solder point 225 K/W 7. Static characteristics Table 7. Static characteristics T j =25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per MOSFET; unless otherwise specified V (BR)DSS drain-source breakdown voltage V G1-S =V G2-S =V; =1 A amplifier A 6 - - V amplifier B 6 - - V V (BR)G1-SS gate1-source breakdown voltage V G2-S =V DS =V; I G1-S =1mA 6-1 V V (BR)G2-SS gate2-source breakdown voltage V G1-S =V DS =V; I G2-S =1mA 6-1 V V F(S-G1) forward source-gate1 voltage V G2-S =V DS =V; I S-G1 = 1 ma.5-1.5 V V F(S-G2) forward source-gate2 voltage V G1-S =V DS =V; I S-G2 = 1 ma.5-1.5 V V G1-S(th) gate1-source threshold voltage V DS =5V; V G2-S =V; =1 A.3-1. V V G2-S(th) gate2-source threshold voltage V DS =5V; V G1-S =5V; =1 A. - 1. V SX drain-source current V G2-S =V; V DS(B) =5V; R G1 = 15 k amplifier A; V DS(A) =5V [1] 1-2 ma amplifier B; V DS(B) =5V [2] 9-17 ma I G1-S gate1 cut-off current V G2-S =V DS(A) =V amplifier A; V G1-S(A) =5V; (B) =A - - 5 na amplifier B; V G1-S(B) =5V; V DS(B) =V - - 5 na I G2-S gate2 cut-off current V G2-S =V; V G1-S(B) =V; V G1-S(A) =V DS(A) =V DS(B) =V - - 2 na [1] R G1 connects gate1 (B) to V GG = V (see Figure 3). [2] R G1 connects gate1 (B) to V GG = 5 V (see Figure 3). All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 of 23
2 1aaa552 16 (1) G1A DA 12 (2) G2 S 8 (3) G1B DB () R G1 (6) V GG 1aac25 1 2 3 5 V GG (V) Fig 2. (1) (B) ; R G1 = 12 k. (2) (B) ; R G1 = 15 k. (3) (B) ; R G1 = 18 k. () (A) ; R G1 = 18 k. (A) ; R G1 = 15 k. (6) (A) ; R G1 = 12 k. Drain currents of MOSFET A and B as a function of gate1 supply voltage Fig 3. V GG = 5 V: amplifier A is off; amplifier B is on. V GG = V: amplifier A is on; amplifier B is off. Functional diagram 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8. Dynamic characteristics for amplifier A [1] Common source; T amb =25 C; V G2-S =V; V DS =5V; = 19 ma; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit y fs forward transfer admittance T j =25 C 26 31 1 ms C iss(g1) input capacitance at gate1 f = 1 MHz - 2.2 2.7 pf C iss(g2) input capacitance at gate2 f = 1 MHz - 3. - pf C oss output capacitance f = 1 MHz -.9 - pf C rss reverse transfer capacitance f = 1 MHz - 2 - ff G tr power gain B S =B S(opt) ; B L =B L(opt) f=2mhz; G S =2mS; G L =.5 ms 32 36 db f=mhz; G S =2mS; G L = 1 ms 28 32 36 db f=8mhz; G S = 3.3 ms; G L = 1 ms 23 27 32 db NF noise figure f = 11 MHz; G S =2mS; B S = S - 3. - db f=mhz; Y S =Y S(opt) - 1.3 1.9 db f=8mhz; Y S =Y S(opt) - 1. 2.1 db All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 5 of 23
Table 8. Dynamic characteristics for amplifier A [1] continued Common source; T amb =25 C; V G2-S =V; V DS =5V; = 19 ma; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Xmod cross-modulation input level for k = 1 %; f w =5MHz; f unw =6MHz [1] For the MOSFET not in use: V G1-S(B) =V; V DS(B) =V. [2] Measured in Figure 33 test circuit. 8.1.1 Graphics for amplifier A at db AGC 9 - - db V at 1 db AGC - 9 - db V at 2 db AGC - 99 - db V at db AGC 1 15 - db V [2] 3 2 1aaa55 (1) (2) (3) () 32 2 1aaa555 (1) (2) (3) 16 () (6) 1 (6) (7) 8 (8) (9) (7) Fig...8 1.2 1.6 2 V G1-S (V) (1) V G2-S =V. (2) V G2-S =3.5V. (3) V G2-S =3V. () V G2-S =2.5V. V G2-S =2V. (6) V G2-S =1.5V. (7) V G2-S =1V. V DS(A) =5V; V G1-S(B) =V DS(B) =V; T j =25 C. Amplifier A: transfer characteristics; typical values Fig 5. 2 6 V DS (V) (1) V G1-S(A) =1.8V. (2) V G1-S(A) =1.7V. (3) V G1-S(A) =1.6V. () V G1-S(A) =1.5V. V G1-S(A) =1.V. (6) V G1-S(A) =1.3V. (7) V G1-S(A) =1.2V. (8) V G1-S(A) =1.1V. (9) V G1-S(A) =1V. V G2-S =V; V G1-S(B) =V DS(B) =V; T j =25 C. Amplifier A: output characteristics; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 6 of 23
1aaa556 2 1aac26 y fs (ms) 3 (1) (2) (A) 16 12 2 (3) 8 1 () (6) 8 16 2 32 2 6 (B) (μa) Fig 6. (1) V G2-S =V. (2) V G2-S =3.5V. (3) V G2-S =3V. () V G2-S =2.5V. V G2-S =2V. (6) V G2-S =1.5V. V DS(A) =5V; V G1-S(B) =V DS(B) =V; T j =25 C. Amplifier A: forward transfer admittance as a function of drain current; typical values Fig 7. V DS(A) =5V; V G2-S =V; V DS(B) =5V; V G1-S(B) =V; T j =25 C. (B) = internal G1 current = current in pin drain (B) if MOSFET (B) is switched off. Amplifier A: drain current as a function of internal G1 current; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 7 of 23
2 1aaa558 32 1aaa559 16 2 12 8 16 (1) (2) (3) () (6) 8 1 2 3 5 V sup (V) 2 6 V G2-S (V) Fig 8. V DS(A) =V DS(B) =V supply ; V G2-S =V; T j =25 C; R G1 = 15 k (connected to ground); see Figure 3. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values Fig 9. (1) V DS(B) =5V. (2) V DS(B) =.5V. (3) V DS(B) =V. () V DS(B) =3.5V. V DS(B) =3V. (6) V DS(B) =2.5V. V DS(A) =5V; V G1-S(B) = V; gate1 (A) = open; T j =25 C. Amplifier A: drain current as a function of gate2 voltage; typical values 12 V unw (dbμv) 11 1aac195 gain reduction (db) 1 1aac196 2 1 3 9 8 1 2 3 5 gain reduction (db) 5 1 2 3 V AGC (V) V DS(A) =V DS(B) =5V; V G1-S(B) =V; f w =5MHz; f unw =6MHz; T amb =25 C; see Figure 33. Fig 1. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values Fig 11. V DS(A) =V DS(B) =5V; V G1-S(B) = V; f = 5 MHz; see Figure 33. Amplifier A: gain reduction as a function of AGC voltage; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 8 of 23
28 1aac197 1 2 1aac566 b is, g is (ms) 1 2 b is 1 12 1 1 g is 1 2 3 5 gain reduction (db) 1 2 1 1 2 1 3 f (MHz) V DS(A) =V DS(B) =5V; V G1-S(B) =V; f=5mhz; T amb =25 C; see Figure 33. V DS(A) =5V; V G2-S =V; V DS(B) =V G1-S(B) =V; (A) =19mA Fig 12. Amplifier A: drain current as a function of gain reduction; typical values Fig 13. Amplifier A: input admittance as a function of frequency; typical values 1 2 1aac567 1 2 1 3 1aac568 1 3 y fs (ms) y fs ϕ fs y rs (μs) 1 2 ϕ rs ϕ rs 1 2 1 ϕ fs 1 y rs 1 1 1 1 1 1 2 1 3 f (MHz) 1 1 1 1 2 1 3 f (MHz) V DS(A) =5V; V G2-S =V; V DS(B) =V G1-S(B) =V; (A) =19mA V DS(A) =5V; V G2-S =V; V DS(B) =V G1-S(B) =V; (A) =19mA Fig 1. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 9 of 23
1 1aac569 b os, g os (ms) 1 b os 1 1 g os 1 2 1 1 2 1 3 f (MHz) Fig 16. V DS(A) =5V; V G2-S =V; V DS(B) =V G1-S(B) =V; (A) =19mA Amplifier A: output admittance as a function of frequency; typical values 8.1.2 Scattering parameters for amplifier A Table 9. Scattering parameters for amplifier A V DS(A) =5V; V G2-S =V; (A) =19mA; V DS(B) =V;V G1-S(B) =V; T amb = 25 C; typical values. f (MHz) s 11 s 21 s 12 s 22 Magnitude (ratio) Angle 8.1.3 Noise data for amplifier A Magnitude (ratio) Angle Magnitude (ratio) Angle Magnitude (ratio) Angle 5.991 3.86 3.8 175.91.9 77.1.992 1.1 1.99 7.73 3.3 171.76.19 78.1.991 2.81 2.986 15.3 2.99 163.68.37 78.39.99 5.57 3.98 22.98 2.9 155.5.5 73.53.989 8.3.97 3. 2.89 17.55.7 68.7.986 11.8 5.96 37.6 2.82 139.76.85 63.6.983 13.78 6.98.62 2.75 132.16.98 59.62.98 16.5 7.935 51. 2.67 12.7.11 55.9.977 19.1 8.921 58. 2.58 117.39.12 5.79.973 21.69 9.98 6.1 2.5 11.2.128 6.62.97 2.28 1.89 7.9 2. 13.31.135 2.78.967 26.87 Table 1. Noise data for amplifier A V DS(A) =5V; V G2-S =V; (A) =19mA; V DS(B) =V; V G1-S(B) =V; T amb =25 C; typical values; unless otherwise specified. f (MHz) NF min (db) opt r n ( ) ratio 1.3.718 16.6.683 8 1..677 37.59.681 All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 1 of 23
8.2 Dynamic characteristics for amplifier B Table 11. Dynamic characteristics for amplifier B [1] Common source; T amb =25 C; V G2-S =V; V DS =5V; = 13 ma; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit y fs forward transfer admittance T j =25 C 28 33 3 ms C iss(g1) input capacitance at gate1 f = 1 MHz - 2. 2.5 pf C iss(g2) input capacitance at gate2 f = 1 MHz - 3. - pf C oss output capacitance f = 1 MHz -.85 - pf C rss reverse transfer capacitance f = 1 MHz - 2 - ff G tr power gain B S =B S(opt) ; B L =B L(opt) [1] For the MOSFET not in use: V G1-S(A) = V; V DS(A) = V. [2] Measured in Figure 3 test circuit. f = 2 MHz; G S =2mS; G L =.5 ms 33 37 1 db f = MHz; G S =2mS; G L = 1 ms 3 3 38 db f = 8 MHz; G S = 3.3 ms; G L = 1 ms 29 33 37 db NF noise figure f = 11 MHz; G S =2mS; B S =S - 5 - db Xmod cross-modulation input level for k = 1 %; f w =5MHz; f unw =6MHz f = MHz; Y S =Y S(opt) - 1.3 1.9 db f = 8 MHz; Y S =Y S(opt) - 1. 2.1 db at db AGC 9 - - db V at 1 db AGC - 88 - db V at 2 db AGC - 9 - db V at db AGC 1 13 - db V [2] All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 11 of 23
8.2.1 Graphics for amplifier B 3 1aaa568 (1) () 32 1aaa569 2 (2) (3) 2 (1) (2) (3) 16 () 1 (6) 8 (6) (7) (7) Fig 17...8 1.2 1.6 2 V G1-S (V) (1) V G2-S =V. (2) V G2-S =3.5V. (3) V G2-S =3V. () V G2-S =2.5V. V G2-S =2V. (6) V G2-S =1.5V. (7) V G2-S =1V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C. Amplifier B: transfer characteristics; typical values Fig 18. 2 6 V DS (V) (1) V G1-S(B) =1.6V. (2) V G1-S(B) =1.5V. (3) V G1-S(B) =1.V. () V G1-S(B) =1.3V. V G1-S(B) =1.2V. (6) V G1-S(B) =1.1V. (7) V G1-S(B) =1V. V G2-S =V; V DS(A) =V G1-S(A) =V; T j =25 C. Amplifier B: output characteristics; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 12 of 23
1 I G1 (μa) 8 1aaa57 (1) (2) (3) y fs (ms) 3 1aaa571 (1) (2) (3) 6 () () 2 Fig 19. 2 (7)..8 1.2 1.6 2 V G1-S (V) (1) V G2-S =V. (2) V G2-S =3.5V. (3) V G2-S =3V. () V G2-S =2.5V. V G2-S =2V. (6) V G2-S =1.5V. (7) V G2-S =1V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C. Amplifier B: gate1 current as a function of gate1 voltage; typical values (6) Fig 2. 1 (6) (7) 8 16 2 32 (1) V G2-S =V. (2) V G2-S =3.5V. (3) V G2-S =3V. () V G2-S =2.5V. V G2-S =2V. (6) V G2-S =1.5V. (7) V G2-S =1V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C. Amplifier B: forward transfer admittance as a function of drain current; typical values 2 1aaa572 16 1aaa573 12 16 8 8 1 2 3 5 I G1 (μa) 1 2 3 5 V GG (V) V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; T j =25 C. V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; T j =25 C; R G1 = 15 k (connected to V GG ); see Figure 3. Fig 21. Amplifier B: drain current as a function of gate1 current; typical values Fig 22. Amplifier B: drain current as a function of gate1 supply voltage; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 13 of 23
2 16 1aaa57 (1) (2) (3) () 16 12 1aaa575 (1) (2) (3) () 8 (6) (7) (8) 8 Fig 23. 2 6 V GG = V DS (V) (1) R G1 =68k. (2) R G1 =82k. (3) R G1 = 1 k. () R G1 = 12 k. R G1 = 15 k. (6) R G1 = 18 k. (7) R G1 = 22 k. (8) R G1 = 27 k. V G2-S =V; V DS(A) =V G1-S(A) =V; T j =25 C; R G1 is connected to V GG ; see Figure 3. Amplifier B: drain current as a function of gate1 supply voltage and drain supply voltage; typical values Fig 2. 2 6 V G2-S (V) (1) V GG =5.V. (2) V GG =.5V. (3) V GG =.V. () V GG =3.5V. V GG =3.V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C; R G1 = 15 k (connected to V GG ); see Figure 3. Amplifier B: drain current as a function of gate2 voltage; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 1 of 23
3 1aaa576 12 1aac198 I G1 (μa) (1) (2) V unw (dbμv) 11 2 (3) () 1 1 9 Fig 25. 2 6 V G2-S (V) (1) V GG =5.V. (2) V GG =.5V. (3) V GG =.V. () V GG =3.5V. V GG =3.V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C; R G1 = 15 k (connected to V GG ); see Figure 3. Amplifier B: gate1 current as a function of gate2 voltage; typical values 8 2 6 gain reduction (db) V DS(B) =5V; V GG =5V; V DS(A) =V G1-S(A) =V; R G1 = 15 k (connected to V GG ); f w =5MHz; f unw =6MHz; T amb =25 C; see Figure 3. Fig 26. Amplifier B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values gain reduction (db) 1 1aac199 16 12 1aac2 2 8 3 5 1 2 3 V AGC (V) 1 2 3 5 gain reduction (db) V DS(B) =5V; V GG =5V; V DS(A) =V G1-S(A) =V; R G1 = 15 k (connected to V GG ); f = 5 MHz; T amb =25 C; see Figure 3. V DS(B) =5V; V GG =5V; V DS(A) =V G1-S(A) =V; R G1 = 15 k (connected to V GG ); f = 5 MHz; T amb =25 C; see Figure 3. Fig 27. Amplifier B: gain reduction as a function of AGC voltage; typical values Fig 28. Amplifier B: drain current as a function of gain reduction; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 15 of 23
1 2 1aac57 1 2 1aac571 1 2 b is, g is (ms) 1 y fs (ms) y fs ϕ fs b is 1 1 1 g is ϕ fs 1 1 1 2 1 1 2 1 3 f (MHz) 1 1 1 1 2 1 3 f (MHz) V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; (B) =13mA V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; (B) =13mA Fig 29. Amplifier B: input admittance as a function of frequency; typical values Fig 3. Amplifier B: forward transfer admittance and phase as a function of frequency; typical values 1 3 1aac572 1 3 1 1aac573 y rs (μs) ϕ rs b os, g os (ms) 1 2 ϕ rs 1 2 1 b os y rs g os 1 1 1 1 1 1 1 2 1 3 1 f (MHz) 1 2 1 1 2 1 3 f (MHz) V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; (B) =13mA V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; (B) =13mA Fig 31. Amplifier B: reverse transfer admittance and phase as a function of frequency; typical values Fig 32. Amplifier B: output admittance as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 16 of 23
8.2.2 Scattering parameters for amplifier B Table 12. Scattering parameters for amplifier B V DS(B) =5V; V G2-S =V; (B) =13mA; V DS(A) =V;V G1-S(A) =V; T amb = 25 C; typical values. f (MHz) s 11 s 21 s 12 s 22 Magnitude (ratio) Angle 8.2.3 Noise data for amplifier B Magnitude (ratio) Angle Magnitude (ratio) Angle Magnitude (ratio) Angle 5.985 3.2 3.33 176.1.1 87.55.988 1.6 1.98 6.96 3.31 172.7.2 83.5.988 3.16 2.98 13.51 3.27 165.59.39 82.8.987 6.31 3.975 2.7 3.23 158.2.5 82.1.986 9..969 26.61 3.19 151.3.68 79.73.98 12.6 5.961 32.89 3.1 1.33.85 77.91.982 15.57 6.955 39.19 3.7 137.5.1 76.31.98 18.62 7.95 5.39 3. 13.72.115 73.76.977 21.7 8.938 51.39 2.93 123.98.131 71.58.97 2.76 9.93 57.36 2.85 117.31.15 69.18.971 27.81 1.92 63.1 2.77 11.39.157 67.5.967 3.86 Table 13. Noise data for amplifier B V DS(B) =5V; V G2-S =V; (B) =13mA; V DS(A) =V; V G1-S(A) =V; T amb =25 C; typical values; unless otherwise specified. f (MHz) NF min (db) opt r n ( ) ratio 1.3.695 13.11.69 8 1..67 32.77.67 All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 17 of 23
9. Test information V AGC V DS(A) 5V.7 nf 1 kω L1 2.2 μh.7 nf G1A DA.7 nf RGEN 5 Ω 5 Ω.7 nf G2 S RL 5 Ω V i.7 nf G1B DB 5 Ω RG1 L2 2.2 μh.7 nf V GG V V DS(B) 5V 1aac21 Fig 33. Cross-modulation test set-up for amplifier A V AGC V DS(A) 5V.7 nf.7 nf 1 kω G1A DA L1 2.2 μh 5 Ω.7 nf G2 S.7 nf G1B DB.7 nf RGEN 5 Ω 5 Ω RG1 L2 2.2 μh RL 5 Ω V i.7 nf V GG 5V V DS(B) 5V 1aac22 Fig 3. Cross-modulation test set-up for amplifier B All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 18 of 23
1. Package outline Plastic surface-mounted package; 6 leads SOT666 D A E X S Y S H E 6 5 pin 1 index A 1 2 3 c e 1 b p w M A L p e detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b p c D E e e 1 H E L p w y mm.6.5.27.17.18.8 1.7 1.5 1.3 1.1 1..5 1.7 1.5.3.1.1.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT666-11-8 6-3-16 Fig 35. Package outline SOT666 All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 19 of 23
11. Revision history Table 1. Revision history Document ID Release date Data sheet status Change notice Supersedes v.2 21197 Product data sheet - v.1 Modifications: v.1 (9397 75 125) The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. 25316 Product data sheet - - All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 2 of 23
12. Legal information 12.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 613) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 21 of 23
Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications. 12. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 2 7 September 211 22 of 23
1. Contents 1 Product profile.......................... 1 1.1 General description..................... 1 1.2 Features and benefits.................... 1 1.3 Applications........................... 1 1. Quick reference data.................... 2 2 Pinning information...................... 2 3 Ordering information..................... 3 Marking................................ 3 5 Limiting values.......................... 3 6 Thermal characteristics.................. 7 Static characteristics..................... 8 Dynamic characteristics.................. 5 8.1 Dynamic characteristics for amplifier A....... 5 8.1.1 Graphics for amplifier A.................. 6 8.1.2 Scattering parameters for amplifier A....... 1 8.1.3 Noise data for amplifier A................ 1 8.2 Dynamic characteristics for amplifier B...... 11 8.2.1 Graphics for amplifier B................. 12 8.2.2 Scattering parameters for amplifier B....... 17 8.2.3 Noise data for amplifier B................ 17 9 Test information........................ 18 1 Package outline........................ 19 11 Revision history........................ 2 12 Legal information....................... 21 12.1 Data sheet status...................... 21 12.2 Definitions............................ 21 12.3 Disclaimers........................... 21 12. Trademarks........................... 22 13 Contact information..................... 22 1 Contents.............................. 23 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 211. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 September 211 Document identifier: