FQPF47P06 / FQPF47P06YDTU P-Channel QFET MOSFET -60 V, -30 A, 26 mω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features -30 A, -60 V, R DS(on) =26 mω(max.) @ =-10 V, I D =-15 A Low Gate Charge (Typ. 84 nc) Low Crss (Typ. 320 pf) 100% Avalanche Tested 175 C Maximum Junction Temperature Rating G! S! March 2013 G D S TO-220F! D Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter FQPF47P06 / FQPF47P06YDTU Unit S Drain-Source Voltage -60 V I D Drain Current - Continuous (T C = 25 C) -30 A Thermal Characteristics - Continuous (T C = 100 C) -21.2 A I DM Drain Current - Pulsed (Note 1) -120 A S Gate-Source Voltage ± 25 V E AS Single Pulsed Avalanche Energy (Note 2) 820 mj I AR Avalanche Current (Note 1) -30 A E AR Repetitive Avalanche Energy (Note 1) 6.2 mj dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns P D Power Dissipation (T C = 25 C) 62 W - Derate above 25 C 0.41 W/ C T J, T STG Operating and Storage Temperature Range -55 to +175 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Symbol Parameter Typ Max Unit R θjc Thermal Resistance, Junction-to-Case -- 2.42 C/W R θja Thermal Resistance, Junction-to-Ambient -- 62.5 C/W
Elerical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = -250 µa -60 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = -250 µa, Referenced to 25 C -- -0.06 -- V/ C I DSS = -60 V, = 0 V -- -- -1 µa Zero Gate Voltage Drain Current = -48 V, T C = 150 C -- -- -10 µa I GSSF Gate-Body Leakage Current, Forward = -25 V, = 0 V -- -- -100 na I GSSR Gate-Body Leakage Current, Reverse = 25 V, = 0 V -- -- 100 na On Characteristics (th) Gate Threshold Voltage =, I D = -250 µa -2.0 -- -4.0 V R DS(on) Static Drain-Source V On-Resistance GS = -10 V, I D = -15 A -- 0.021 0.026 Ω g FS Forward Transconductance = -30 V, I D = -15 A (Note 4) -- 19 -- S Dynamic Characteristics C iss Input Capacitance = -25 V, = 0 V, -- 2800 3600 pf C oss Output Capacitance f = 1.0 MHz -- 1300 1700 pf C rss Reverse Transfer Capacitance -- 320 420 pf Switching Characteristics t d(on) Turn-On Delay Time -- 50 110 ns = -30 V, I D = -23.5 A, t r Turn-On Rise Time R G = 25 Ω -- 450 910 ns t d(off) Turn-Off Delay Time -- 100 210 ns t f Turn-Off Fall Time (Note 4, 5) -- 195 400 ns Q g Total Gate Charge = -48 V, I D = -47 A, -- 84 110 nc Q gs Gate-Source Charge = -10 V -- 18 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 44 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- -30 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- -120 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = -30 A -- -- -4.0 V t rr Reverse Recovery Time = 0 V, I S = -47 A, -- 130 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 0.55 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.06mH, I AS = -30A, = -25V, R G = 25 Ω, Starting T J = 25 C 3. I SD -47A, di/dt 300A/µs, BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics -I D, Drain Current [A] R DS(on) [Ω], Drain-Source On-Resistance 10 2 Top : - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 10 1 10 0 0.10 0.08 0.06 0.04 0.02 = - 20V = - 10V 1. 250μ s Pulse Test 2. T C = 25 10-1 10 0 10 1 -, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Note : T J = 25 0.00 0 100 200 300 400 -I D, Drain Current [A] -I D, Drain Current [A] -I DR, Reverse Drain Current [A] 10 2 10 1 10 2 10 1 10 0 175 10 0 25 175-55 10-1 2 4 6 8 10 -, Gate-Source Voltage [V] 25 1. = 0V 2. 250μ s Pulse Test 10-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -V SD, Source-Drain Voltage [V] 1. = -30V 2. 250μ s Pulse Test Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 8000 7000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 12 10 Capacitance [pf] 6000 5000 4000 3000 2000 1000 C oss C iss C rss 1. = 0 V 2. f = 1 MHz -, Gate-Source Voltage [V] 8 6 4 2 = -30V = -48V Note : I D = -47 A 0 10-1 10 0 10 1, Drain-Source Voltage [V] 0 0 10 20 30 40 50 60 70 80 90 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) -BS, (Normalized) Drain-Source Breakdown Voltage -I D, Drain Current [A] 1.2 1.1 1.0 0.9 0.8-100 -50 0 50 100 150 200 10 2 10 1 10 0 T J, Junction Temperature [ o C] Operation in This Area is Limited by R DS(on) DC 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse 10 ms 100 ms 1. = 0 V 2. I D = -250 μ A Figure 7. Breakdown Voltage Variation vs. Temperature 1 ms 100 µs 10-1 10 0 10 1 10 2 -, Drain-Source Voltage [V] R DS(ON), (Normalized) Drain-Source On-Resistance -I D, Drain Current [A] 2.5 2.0 1.5 1.0 0.5 0.0-100 -50 0 50 100 150 200 30 25 20 15 10 5 T J, Junction Temperature [ o C] 0 25 50 75 100 125 150 175 T C, Case Temperature [ ] 1. = -10 V 2. I D = -23.5 A Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Thermal Response 10 0 10-1 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse N otes : 1. Z θ JC (t) = 2.42 /W M ax. 2. D uty F actor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10-1 10 0 10 1 t 1, S quare W ave P ulse D uration [sec] Figure 11. Transient Thermal Response Curve
12V 200nF -3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT -10V Q gs DUT Resistive Switching Test Circuit & Waveforms R L t on Q g Q gd Charge t off t d(on) t r t d(off) tf R G 10% -10V DUT 90% Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS -------------------- BS - I D t p Time R G I D (t) (t) -10V DUT I AS t p BS
Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT _ I SD Driver R G Compliment of DUT (N-Channel) dv/dt controlled by RG I SD controlled by pulse period L ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I SD ( DUT ) ( DUT ) Body Diode Reverse Current V SD I RM di/dt I FM, Body Diode Forward Current Body Diode Forward Voltage Drop Body Diode Recovery dv/dt
Mechanical Dimensions TO-220F Dimensions in Millimeters
Mechanical Dimensions TO-220F (Y-Forming) Dimensions in Millimeters
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM Green Bridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64