UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * R DS(ON) = 18mΩ @V GS = 1 V * Ultra low gate charge ( typical 39nC ) * Fast switching capability * Low reverse transfer Capacitance (C RSS = typical 115pF ) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing 6N6L-TA3-T 6N6G-TA3-T TO-22 G D S Tube 6N6L-TF3-T 6N6G-TF3-T TO-22F G D S Tube 6N6L-TQ2-R 6N6G-TQ2-R TO-263 G D S Tape Reel 6N6L-TQ2-T 6N6G-TQ2-T TO-263 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 1 of 8 Copyright 212 Unisonic Technologies Co., Ltd.
ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 6 V Gate to Source Voltage V GS ±2 V Continuous Drain Current T C = 25 C 6 A I D T C = 1 C 39 A Drain Current Pulsed (Note 2) I DM 12 A Avalanche Energy Single Pulsed (Note 3) E AS 1 mj Repetitive (Note 2) E AR 18 mj Power Dissipation (T C =25 C) TO-22 1 TO-22F P D 7.62 TO-263 54 Junction Temperature T J +15 C Storage Temperature T STG -55 ~ +15 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=.61mH, I AS =6A, R G =2Ω, Starting T J =25 THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-22/TO-22F 62.5 θ JA TO-263 11 C/W TO-22 1.25 Junction to Case TO-22F θ JC 1.77 C/W TO-263 2.31 ELECTRICAL CHARACTERISTICS (T C = 25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = V, I D = 25μA 6 V Drain-Source Leakage Current I DSS V DS = 6 V, V GS = V 1 μa Gate-Source Leakage Current Forward V GS = 2V, V DS = V 1 na I GSS Reverse V GS = -2V, V DS = V -1 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS, I D = 25μA 2. 4. V Static Drain-Source On-State Resistance R DS(ON) V GS = 1 V, I D = 3A 14 18 mω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 2 pf Output Capacitance C OSS V GS = V, V DS =25V, f = 1MHz 4 pf Reverse Transfer Capacitance C RSS 115 pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 12 3 ns Rise Time t R V DD =3V, I D =6A, R L =.5Ω, 11 3 ns Turn-Off Delay Time t D(OFF) V GS =1V (Note 2, 3) 25 5 ns Fall Time t F 15 3 ns Total Gate Charge Q G 39 6 nc V DS = 3V, V GS = 1 V Gate-Source Charge Q GS 12 nc I D = 6A (Note 2, 3) Gate-Drain Charge (Miller Charge) Q GD 1 nc W UNISONIC TECHNOLOGIES CO., LTD 2 of 8
ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD V GS = V, I S = 6A 1.6 V Continuous Source Current I S 6 A Pulsed Source Current I SM 12 Reverse Recovery Time t rr 6 ns I S =6A, V GS =V, di F /dt=1a/μs Reverse Recovery Charge Q RR 3.4 μc Note: 1. I SD 6A, di/dt 3A/μs, V DD BV DSS, Starting T J =25 2. Pulse Test: Pulse Width 3μs, Duty Cycle 2% 3. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 3 of 8
TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS + - - L R G Driver V DD V GS Same Type as D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test V GS (Driver) P.W. Period D= P. W. Period V GS = 1V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) V DD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 8
TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 8
TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Transconductance On-Resistance vs. Drain Current Transconductance, gfs (S) 7 6 5 4 3 2 1 Tc = -55 25 125 On-Resistance, RDS(ON) (Ω).2.16.12.8.4 V GS = 1V 1 2 3 4 5 Gate-to-Source Voltage, V GS (V) 2 4 6 Drain Current, I D (A) 8 1 Capacitance Gate Charge 3 1 Capacitance, C (pf) 25 2 15 1 5 Crss Coss Ciss Gate-to-Source Voltage, VGS (V) 8 6 4 2 V GS = 1V I D = 6A 1 2 3 4 1 2 3 4 Drain-to-Source Voltage, V DS (V) Total Gate Charge, Q G (nc) UNISONIC TECHNOLOGIES CO., LTD 6 of 8
TYPICAL CHARACTERISTICS(Cont.) Drain Current, ID (A) Drain Current, ID (A) On-Resistance, RDS(ON) (Ω) (Normalized) Source Current, IS (A) 2 Normalized Thermal Transient Impedance 1 Duty Cycle =.5.2.1.1. 1 1-5 Single Pulse.5.2 1-3 1-2 1-4 1-1 Square Wave Pulse Duration (sec) 1 3 UNISONIC TECHNOLOGIES CO., LTD 7 of 8
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 8 of 8