PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD- Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -V, TC = 25 C Continuous Drain Current -3 ID @ VGS = -V, TC = C Continuous Drain Current -9 IDM Pulsed Drain Current À -24 PD @ TC = 25 C Max. Power Dissipation 25 W Units Linear Derating Factor. W/ C VGS Gate-to-Source Voltage ±2 V EAS Single Pulse Avalanche Energy Á 34 mj IAR Avalanche Current À -9 A EAR Repetitive Avalanche Energy À 2.5 mj dv/dt Peak Diode Recovery dv/dt  -4. V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range Package Mounting Surface Temperature 3 (for 5 s) C Weight 2.6 (Typical) g A For footnotes refer to the last page www.irf.com 9/23/8
IRF5N52 Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage - V VGS = V, ID = -25µA BVDSS/ TJ Temperature Coefficient of Breakdown -. V/ C Reference to 25 C, ID = -.ma Voltage RDS(on) Static Drain-to-Source On-State.6 Ω VGS = -V, ID = -9A Ã Resistance VGS(th) Gate Threshold Voltage -2. -4. V VDS = VGS, ID = -25µA gfs Forward Transconductance S VDS = -5V, IDS = -9A Ã IDSS Zero Gate Voltage Drain Current -25 VDS = -V,VGS = V µa -25 VDS = -8V, VGS = V, TJ =25 C IGSS Gate-to-Source Leakage Forward - VGS = -2V na IGSS Gate-to-Source Leakage Reverse VGS = 2V Qg Total Gate Charge 25 VGS =-V, ID = -9A Qgs Gate-to-Source Charge 3 nc VDS = -8V Qgd Gate-to-Drain ( Miller ) Charge 5 td(on) Turn-On Delay Time 28 VDD = -5V, ID = -9A, tr Rise Time 5 VGS =-V, RG = 2.5Ω ns td(off) Turn-Off Delay Time 3 tf Fall Time 6 LS + LD Total Inductance 4. nh Measured from the center of drain pad to center of source pad Ciss Input Capacitance 27 VGS = V, VDS = -25V Coss Output Capacitance 83 pf f =.MHz Crss Reverse Transfer Capacitance 47 Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) -3 ISM Pulse Source Current (Body Diode) À -24 A VSD Diode Forward Voltage -.6 V Tj = 25 C, IS = -9A, VGS = V Ã trr Reverse Recovery Time 29 ns Tj = 25 C, IF = -9A, di/dt -A/µs QRR Reverse Recovery Charge 2. µc VDD -5V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case. C/W Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com
IRF5N52 -I D, Drain-to-Source Current (A) VGS TOP -5V -V -8.V -7.V -6.V -5.5V -5.V BOTTOM-4.5V -4.5V 2µs PULSE WIDTH. T J = 25 C. -, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) VGS TOP -5V -V -8.V -7.V -6.V -5.5V -5.V BOTTOM -4.5V -4.5V 2µs PULSE WIDTH T J = 5 C.. -, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) T J = 25 C T J = 5 C = 5-5V 2µs PULSE WIDTH 4 6 8 2 -V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = -3A 2..5..5 V GS = -V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
-I D, Drain-to-Source Current (A) IRF5N52 C, Capacitance (pf) 6 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED C = 5 rss Cgd Coss = Cds + Cgd 4 C iss 3 2 C oss C rss -, Drain-to-Source Voltage (V) -V GS, Gate-to-Source Voltage (V) 2 6 2 8 4 I = D -9A =-8V =-5V =-2V FOR TEST CIRCUIT SEE FIGURE 3 4 8 2 6 2 24 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V..2.4.6.8..2.4.6 -V SD,Source-to-Drain Voltage (V) Tc = 25 C Tj = 5 C Single Pulse OPERATION IN THIS AREA LIMITED BY R DS (on) ms ms -, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
IRF5N52 -I D, Drain Current (A) 35 3 25 2 5 R G V GS V GS Pulse Width µs Duty Factor. % R D D.U.T. Fig a. Switching Time Test Circuit + - V DD 5 25 5 75 25 5 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature t d(on) t r t d(off) t f % 9% Fig b. Switching Time Waveforms Thermal Response (Z thjc ). D =.5.2..5.2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc + TC...... t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
IRF5N52 L R G D.U.T V DD IAS A -2V V GS DRIVER tp.ω 5V Fig 2a. Unclamped Inductive Test Circuit I AS E AS, Single Pulse Avalanche Energy (mj) 8 6 4 2 I D TOP -8.5A -2A BOTTOM -9A 25 5 75 25 5 Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -V Q G -2V.2µF 5KΩ.3µF Q GS Q GD D.U.T. + - V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6 www.irf.com
IRF5N52 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25 V, Starting TJ = 25 C, L =.9mH Peak IAS = -9A, VGS = -V, RG= 25Ω ƒ ISD -9A, di/dt -39 A/µs, VDD -V, TJ 5 C Pulse width 3 µs; Duty Cycle 2% Case Outline and Dimensions SMD- PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 9/28 www.irf.com 7