3V AO48 Dual PChannel MOSFET General Description The AO48 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and battery protection applications. Product Summary V DS 3V I D (at V GS =V) 9A R DS(ON) (at V GS =V) R DS(ON) (at V GS =V) < mω < 8mΩ % UIS Tested % R g Tested SOIC8 Top View Bottom View D D Top View S G S G 8 7 3 6 4 D D D D G G Pin S S Absolute Maximum Ratings T A = C unless otherwise noted Parameter Symbol Maximum DrainSource Voltage 3 GateSource Voltage Continuous Drain Current Pulsed Drain Current C T A = C T A =7 C Avalanche Current C Avalanche energy L=.mH C I AS, I AR E AS, E AR 33 4 T A = C P Power Dissipation B D T A =7 C.3 V DS V GS I DM Junction and Storage Temperature Range T J, T STG to C ± 9 I D 7 Units V V A A mj W Thermal Characteristics Parameter Symbol Typ Max Maximum JunctiontoAmbient A t s 48 6. Maximum JunctiontoAmbient A D R θja SteadyState 74 9 Maximum JunctiontoLead SteadyState 3 4 R θjl Units Rev 7: December www.aosmd.com Page of
AO48 Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =µa, V GS =V 3 V V DS =3V, V GS =V I DSS Zero Gate Voltage Drain Current µa T J = C I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa.7.3.8 V I D(ON) On state drain current V GS =V, V DS =V A R DS(ON) Static DrainSource OnResistance V GS =V, I D =9A V GS =V, I D =8A V GS =4.V, I D =A mω 8 T J = C 3 9 mω g FS Forward Transconductance V DS =V, I D =9A 7 S V SD Diode Forward Voltage I S =A,V GS =V.7 V I S Maximum BodyDiode Continuous Current. A DYNAMIC PARAMETERS C iss Input Capacitance 6 6 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 37 pf C rss Reverse Transfer Capacitance 9 pf R g Gate resistance V GS =V, V DS =V, f=mhz..4 3.6 Ω SWITCHING PARAMETERS Q g Total Gate Charge 3 39 nc Q gs Gate Source Charge V GS =V, V DS =V, I D =9A 4.6 nc Q gd Gate Drain Charge nc t D(on) TurnOn DelayTime ns t r TurnOn Rise Time V GS =V, V DS =V, R L =.67Ω, 9.4 ns t D(off) TurnOff DelayTime R GEN =3Ω 4 ns t f TurnOff Fall Time ns t rr Body Diode Reverse Recovery Time I F =9A, di/dt=a/µs 3 4 ns Q rr Body Diode Reverse Recovery Charge I F =9A, di/dt=a/µs nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A = C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) = C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) = C. Ratings are based on low frequency and duty cycles to keep initialt J = C. D. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on in FR4 board with oz. Copper, assuming a maximum junction temperature of T J(MAX) = C. The SOA curve provides a single pulse ratin g. mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: December www.aosmd.com Page of
AO48 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 6 V 6V V 4.V 8 6 V DS =V I D (A) 4 4V I D (A) 4 V GS =3.V C C 3 4 V DS (Volts) Fig : OnRegion Characteristics (Note E).6 3 4 6 V GS (Volts) Figure : Transfer Characteristics (Note E) R DS(ON) (mω) V GS =V V GS =V Normalized OnResistance.4. V GS =V I D =8A V GS =V I D =9A 7 3 6 9 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage (Note E).8 7 7 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 8 (Note E) R DS(ON) (mω) 3 3 C C I D =9A I S (A).E.E 4.E.E.E3 C C.E4 4 6 8 V GS (Volts) Figure : OnResistance vs. GateSource Voltage (Note E).E...4.6.8.. V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev 7: December www.aosmd.com Page 3 of
AO48 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =V I D =9A 3 C iss V GS (Volts) 6 4 Capacitance (pf) C oss 3 Q g (nc) Figure 7: GateCharge Characteristics C rss 3 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps)...... R DS(ON) limited T J(Max) = C T A = C.. V DS (Volts) Figure : Maximum Forward Biased Safe Operating Area (Note F) µs µs ms ms s DC Power (W) T A = C... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note F) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =9 Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on T Rev 7: December www.aosmd.com Page 4 of
AO48 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms t t on off td(on) tr td(off) t f Rg 9% % Id L Unclamped Inductive Switching (UIS) Test Circuit & Waveforms E = / LI AR AR Rg Id BV DSS I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev 7: December www.aosmd.com Page of