Data Sheet. BTx. HSMP-3866 Quad PIN Diode Pi Attenuator 300 khz to 3 GHz in SOT 25 Package. Description. Features. Specification At 1 GHz, V+=1.

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HSMP-3866 Quad PIN Diode Pi Attenuator 300 khz to 3 GHz in SOT 25 Package Data Sheet Description Avago Technology s HSMP-3866 is a wideband, low insertion loss, low current, Quad PIN Diode Pi Attenuator in a low cost surface mount SOT-25 package. It provides a good match and flat attenuation over an extremely wide band from 300 khz to 3 GHz. The SOT-25 packages gives a reduction in part count and takes up less space on board compared to multi package solutions. Four PIN Diodes in one package encourages performance repeatability for improved production yield at board level. Package Marking and Pin connections 3 2 BTx 1 Note: Package marking provides orientation and identification BT = Device Code x = Month code indicates the month of manufacture Features 4 PIN Diodes in a SOT-25 package 300 khz to 3 GHz usable frequency band Low Current Low insertion Loss MSL-1 and Lead-free Tape & Reel packaging option available Specification At 1 GHz, V+=1.2V IIP3 = 30 dbm (Typical) Attenuation = 36 db (Typical) Insertion Loss = -2.5 db (Typical) Return Loss = -18 db (Typical) Application Broadband system application (i.e., CATV, WCDMA, etc) General purpose Voltage-Control-Attenuator for low current applications. 4 5 Pin 3 : RF In/Out Pin 2 : Series Bias Pin 1 : RF In/Out Pin 4 : Shunt Bias Pin 5 : Shunt Bias

Absolute Max Ratings [1], Tc = +25 C Symbol Parameter Unit Abs Max I f Forward Current (1 µs Pulse) Amp 1 P IV Peak Inverse Voltage V 50 T j Junction Temperature C 150 T stg Storage Temperature C -65 to 150 q jb Thermal Resistance [2] C/W 167 Notes : 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. Thermal Resistance is measured from junction to board using IR method. Electrical Specifications, Tc = +25 C (Each Diode) Test Condition Minimum Breakdown Voltage V BR (V) Typical Series Resistance R S (W) 50 3.0/1.5* 0.22 V R = V BR Measure I R 10 µa I F = 10 ma, f = 100 MHz I F = 100 ma* Typical Total Capacitance C T (pf) V R = 50 V f = 1 MHz Typical Performance, Tc = +25 C (Each Diode) Test Condition Total Resistance R T (W) Carrier Lifetime t(ns) Reverse Recovery Time T rr (ns) 22 500 80 0.22 I F = 1 ma f = 1 MHz I F = 10mA I R = 250 ma V R = 50 V I F = 10 ma 90% Recovery Total Capacitance C T (pf) V R = 50V f = 1MHz Typical Performance for HSMP-3866 Quad PIN Diode π Attenuator @ +25 C Parameter Test Condition Units Typical Insertion Loss Vc = 5V, V+ = 1.2V, Freq = 1 GHz db -2.5 Return Loss Vc = 0V, V+ = 1.2V, Freq = 1 GHz db -18 Attenuation Vc = 0V, V+ = 1.2V, Freq = 1 GHz db 36 IP3 Vc = 1.5V, V+ = 1.2V, Freq = 1 GHz dbm 30 IP3 Vc = 5.0V, V+ = 1.2V, Freq = 1 GHz dbm 40 IP3 Vc = 1.5V, V+ = 1.2V, Freq = 300 MHz dbm 25 IP3 Vc = 5.0V, V+ = 1.2V, Freq = 300 MHz dbm 37 IP3 Vc = 1.5V, V+ = 1.2V, Freq = 100 MHz dbm 23 IP3 Vc = 5.0V, V+ = 1.2V, Freq = 100 MHz dbm 35 Notes : 1. Measurement above obtained using Wideband RF circuit design shown in Figure 1 & 2 2

C3 Vc R3 C1 HSMP-3866 C2 RFin RFout R1 R4 R 4 R2 C4 C5 V+ Figure 2. Circuit Board Layout. Component Value R1, R2 620 W R3 390 W R4 2200 W C1 - C5 10 nf Figure 1. Wideband Quad PIN Diode π Attenuator Circuit Typical Performance Curves for Single Diode @ Tc = +25 C 1000 100.00 Resistance (OHMS) 100 10 TA = +85 C TA = +25 C TA = - 55 C Forward Current (ma) 10.00 1.00 0.10 1 0.01 0.10 1.00 10.00 100.00 Forward Current (ma) Figure 3. RF Resistance vs. Forward Bias Current 0.01 +125 C +25 C - 50 C 0 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage (V) Figure 4. Forward Current vs. Forward Voltage 3

Typical Performance Curves for Single Diode @ Tc = +25 C Total Capacitance (pf) 0.35 0.30 1 MHz 0.25 100 MHz 1 GHz 0.20 0.15 0 2 4 6 8 10 12 14 16 18 20 Reverse Voltage (V) Figure 5. RF Capacitance vs Reverse Bias Insertion Loss - (db) 0-10 -20-30 -40-50 -60-70 0 500 1000 1500 2000 2500 3000 Frequency - (MHz) Figure 6. Insertion Loss vs. Frequency Vc=0.5V Vc=0.75V Vc=1.0V Vc=1.5V Vc=2.0V Vc=5.0V 0 40 Return Loss - (db) -10-20 -30-40 Vc=0V Vc=+5V INPUT IP3 (dbm) 30 20 1GHz 300 Hz 100 MHz -50 0 500 1000 1500 2000 2500 3000 Frequency - (MHz) Figure 7. Return Loss vs. Frequency 10 0 10 20 30 40 Attenuation (db) Figure 8. Input IP3 vs. Attenuation 100 Attenuation - (db) 10 0.12 GHz 1 GHz 1.8 GHz 2.4 GHz 3.0 GHz 1 0 1 2 3 4 5 Control Voltage - (V) Figure 9. Attenuation vs. Control Voltage 4

Package Outline & Dimension D Dimension Symbol Minimum Nominal Maximum D 2.80 2.90 3.00 H E H 2.60 2.80 3.00 E 1.50 1.60 1.70 e1 1.88 1.90 1.92 B e1 e L2 CL PKG e 0.93 0.95 0.97 B 0.35 0.50 A2 0.9 1.15 1.30 C 0.08 0.22 A2 A L 0.35 0.60 A1 0 0.15 A1 0.250 SEATING PLANE L GAGE PLANE C A 0.9 1.40 PCB Footprint 0.074 1.9 0.037 0.95 0.094 2.4 0.039 1.0 0.028 0.7 DIMENSIONS IN Inches mm 5

Device Orientation REEL Top View 4 mm End View USER FEED DIRECTION COVER TAPE CARRIER TAPE 8 mm BT? BT? BT? BT? Note: "BT" represents package marking code "?" represents date code Tape Dimension D Po P2 T1 F E W Bo Ko 7 MAX Ao 8 MAX P D1 Milmeters Symbol Nominal Minimum Maximum V 8.00 (0.315) 7.90 (0.311) 8.30 (0.327) P 4.00 (0.157) 3.90 (0.154) 4.10 (0.161) E 1.75 (0.069) 1.65 (0.065) 1.85 (0.073) F 3.50 (0.138) 3.45 (0.136) 3.55 (0.140) J 1.50 (0.059) N/A 1.60 (0.063) J1 1.00 (0.039) N/A 1.25 (0.049) Po 4.00 (0.157) 3.90 (0.154) 4.10 (0.161) P2 2.00 (0.079) 1.95 (0.077) 2.05 (0.081) Ao 3.23 (0.127) 3.13 (0.123) 3.33 (0.131) Jo 3.81 (0.125) 3.08 (0.121) 3.28 (0.129) Fo 1.60(0.063) 1.50 (0.059) 1.70 (0.067) T1 0.254 (0.0100) 0.241 (0.0095) 0.267 (0.0105) Part Number Ordering Information Part number No of Device Container HSMP-3866-BLKG 100 Anti-static bag HSMP-3866-TR1G 3000 7 reel HSMP-3866-TR2G 10000 13 reel For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-4497EN AV02-1962EN - June 3, 2009