VS-ETS...PbF Series, VS-ETS...M3 Series High Voltage, Input Rectifier Diode, Base cathode 3 3 TO-C Cathode node PRODUCT SUMMRY Package TO-C I F(V) V R 8 V to V V F at I F. V I FSM 6 T J max. 5 C Diode variation Single die FETURES Very low forward voltage drop 5 C max. operating junction temperature Designed and qualified according to JEDEC-JESD47 Material categorization: For definitions of compliance please see www.vishay.com/doc?999 vailable PPLICTIONS Input rectification switches and output rectifiers which are available in identical package outlines DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE BRIDGE THREE-PHSE BRIDGE UNITS Capacitive input filter T = 55 C, T J = 5 C common heatsink of C/W. 6. MJOR RTINGS ND CHRCTERISTICS SYMBOL CHRCTERISTICS VLUES UNITS I F(V) Sinusoidal waveform V RRM 8/ V I FSM 6 V F, T J = 5 C. V T J - 4 to 5 C VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-ETS8PbF, VS-ETS8-M3 8 9 VS-ETSPbF, VS-ETS-M3 3 I RRM T 5 C m.5 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum average forward current I F(V) T C = 5 C, 8 conduction half sine wave Maximum peak one cycle ms sine pulse, rated V RRM applied 35 I FSM non-repetitive surge current ms sine pulse, no voltage reapplied 6 Maximum I t for fusing I ms sine pulse, rated V RRM applied 9 t s ms sine pulse, no voltage reapplied 3 Maximum I t for fusing I t t =. ms to ms, no voltage reapplied 3 s Revision: 6-Jul-3 Document Number: 94337 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-ETS...PbF Series, VS-ETS...M3 Series ELECTRICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum forward voltage drop V FM, T J = 5 C. V Forward slope resistance r t m T J = 5 C Threshold voltage V F(TO).8 V T J = 5 C.5 Maximum reverse leakage current I RM V R = Rated V RRM T J = 5 C.5 m THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg - 4 to 5 C Maximum thermal resistance, junction to case R thjc DC operation.5 Maximum thermal resistance, junction to ambient C/W R thj 6 (PCB mount) Soldering temperature T S 4 C pproximate weight Marking device Case style TO-C g.7 oz. ETS8 ETS Maximum llowable Case Temperature ( C) 5 4 3 9 8 3 ETS.. Series R thjc (DC) =.5 C/W 6 9 Conduction angle 8 4 6 8 Maximum llowable Case Temperature ( C) 5 4 3 9 3 ETS.. Series R thjc (DC) =.5 C/W 6 9 Conduction period 8 DC 4 6 8 4 6 8 verage Forward Current () verage Forward Current () Fig. - Current Rating Characteristics Fig. - Current Rating Characteristics Revision: 6-Jul-3 Document Number: 94337 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-ETS...PbF Series, VS-ETS...M3 Series Maximum verage Forward Power Loss (W) 6 4 8 6 4 8 9 6 3 Conduction angle ETS.. Series T J = 5 C 4 6 8 verage Forward Current () RMS limit Fig. 3 - Forward Power Loss Characteristics Peak Half Sine Wave Forward Current () 5 4 3 9 8 7 6 5 4 3 VS-ETS.. Series t any rated load condition and with rated Vrrm applied following surge. Initial Tj = 5 C at 6 Hz.83s at 5 Hz.s Number of Equal mplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum verage Forward Power Loss (W) 8 6 4 8 6 4 DC 8 9 6 3 RMS limit Conduction period ETS.. Series T J = 5 C Peak Half Sine Wave Forward Current () 8 6 4 8 6 4 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied VS-ETS.. Series 4 6 8 4 6.. verage Forward Current () Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitve Surge Current Instantaneous Forward Current () T J = 5 C T J = 5 C ETS.. Series.5..5..5 3. Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 6-Jul-3 3 Document Number: 94337 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
VS-ETS...PbF Series, VS-ETS...M3 Series Z thjc - Transient Thermal Impedance ( C/W) Single pulse D =.5 D =.33 D =.5 D =.7 D =.8 Steady state value (DC operation) ETS.. Series..... Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics ORDERING INFORMTION TBLE Device code VS- E T S PbF 3 4 5 6 7 3 4 5 6 7 - product - Current rating ( = ) - Circuit configuration: E = Single diode - Package: T = TO-C - Type of silicon: S = Standard recovery rectifier 8 = 8 V - Voltage code x = V RRM = V - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-ETS8PbF 5 ntistatic plastic tubes VS-ETS8-M3 5 ntistatic plastic tubes VS-ETSPbF 5 ntistatic plastic tubes VS-ETS-M3 5 ntistatic plastic tubes Dimensions Part marking information LINKS TO RELTED DOCUMENTS TO-C PbF TO-C -M3 www.vishay.com/doc?95 www.vishay.com/doc?954 www.vishay.com/doc?9568 Revision: 6-Jul-3 4 Document Number: 94337 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9
Outline Dimensions TO-C DIMENSIONS in millimeters and inches (6) E E (7) P.4 M B M B Seating plane E Thermal pad 3 D D C C L (6) D Q D Detail B (6) H (7) H θ D (6) x b x b Detail B L3 L4 3 L C E (6) Lead assignments Diodes + - Cathode 3 - node Lead tip e.5 M B M c View - Conforms to JEDEC outline TO-C SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.5 4.65.67.83 E 6.86 8.89.7.35 6.4.4.45.55 E -.76 -.3 7.56.9..5 e.4.67.95.5 b.69..7.4 e 4.88 5.8.9.8 b.38.97.5.38 4 H 6.9 6.48.4.55 6, 7 b..73.47.68 L 3.5 4..53.55 b3.4.73.45.68 4 L 3.3 3.8.3.5 c.36.6.4.4 L3.78.3.7.84 c.36.56.4. 4 L4.76.7.3.5 D 4.85 5.5.585.6 3 P 3.54 3.73.39.47 D 8.38 9..33.355 Q.6 3...8 D.68.88.46.57 6 9 to 93 9 to 93 E..5.398.44 3, 6 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 () Lead dimension and finish uncontrolled in L (3) Dimension D, D and E do not include mold flash. Mold flash shall not exceed.7 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3 and c apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H, D and E (7) Dimension E x H define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-, D (minimum) where dimensions are derived from the actual package outline Document Number: 95 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 7-Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
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