MDFNG N-channel MOSFET V MDFNG N-Channel MOSFET V, A,.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features V DS = V = A @ = V R DS(ON).7Ω @ = V Applications Power Supply PFC High Current, High Speed Switching D G ` TO-F MDF Series S Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS V Gate-Source Voltage S ±3 V Continuous Drain Current T C=5 o C * A T C= o C.3* A Pulsed Drain Current (1) M * A Power Dissipation T C=5 o C P D 8 W Derateabove 5 o C.38 W/ o C Repetitive Avalanche Energy (1) E AR 15. mj Peak Diode Recovery dv/dt (3) dv/dt.5 V/ns Single Pulse Avalanche Energy () E AS 5 mj Junction and Storage Range T J, T stg -55~15 * Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol Rating Unit o C Thermal Resistance, Junction-to-Ambient (1) R θja.5 Thermal Resistance, Junction-to-Case (1) R θjc. o C/W 1
MDFNG N-channel MOSFET V Ordering Information Part Number Temp. Range Package Packing RoHS Status MDFNGTH -55~15 o C TO-F Tube Halogen Free Electrical Characteristics (Ta =5 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 5μA, = V - - Gate Threshold Voltage (th) V DS =, = 5μA 3. - 5. Drain Cut-Off Current SS V DS = V, = V - - 1 μa Gate Leakage Current I GSS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) = V, = 5.3A -.58.7 Ω Forward Transconductance g fs V DS = 3V, = 5.A - 9 - S Dynamic Characteristics Total Gate Charge Q g - 3 - Gate-Source Charge Q gs V DS = 8V, = A, = V (3) - 8.7 - Gate-Drain Charge Q gd - 1. - Input Capacitance C iss - 13 - Reverse Transfer Capacitance C rss V DS = 5V, = V, f = 1.MHz - 7.7 - Output Capacitance C oss - 151 - Turn-On Delay Time t d(on) - 53 - Rise Time t r = V, V DS = 3V, = A, - 38 - Turn-Off Delay Time t d(off) R G = 5Ω (3) - 11 - Fall Time t f - 3 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I S - - A V SD I S = A, = V - - 1. V t rr - 3 - ns I F = A, dl/dt = A/μs (3) Q rr - 3.3 - μc V nc pf ns Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature T J(MAX)=15 C. 3. I SD A, di/dt A/us, V DD=5V, R g =5Ω, Starting T J=5 C. L=9.mH, I AS=.A, V DD=5V, R g =5Ω, Starting T J=5 C,
(A) BV DSS, (Normalized) Drain-Source Breakdown Voltage,Drain Current [A] Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance R DS(ON) [Ω ] MDFNG N-channel MOSFET V 1. 18 1 1 1 V gs =5.5V =.V =.5V =7.V =8.V =.V =15.V Notes 1. 5 μs Pulse Test. T C =5.9.8 8.7 =.V. =V 1 3 5 7 8 9 11 1 13 1 15 V DS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics.5 5 15,Drain Current [A] Fig. On-Resistance Variation with Drain Current and Gate Voltage 3. 1..5 1. = V. = 5.A 1. = V. = 5 μa 1.1. 1.5 1. 1..9.5. -5 5 15 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 15 T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. * Notes ; 1. Vds=3V 1. = V.5 s Pulse test 1 15 5-55 R 1 15 5.1 8 [V] Fig.5 Transfer Characteristics.1.....8 1. 1. V SD, Source-Drain Voltage [V] Fig. Body Diode Forward Voltage Variation with Source Current and 3
Power (W), Drain Current [A], Drain Current [A] Z θ JC (t), Thermal Response, Gate-Source Voltage [V] Capacitance [pf] MDFNG N-channel MOSFET V 8 Note : = A 1V 3V 8V C iss = C gs + C gd (C ds = shorted) C oss C oss = C ds + C gd C rss = C gd 18 C iss 1 1 1 8 C rss Notes ; 1. = V. f = 1 MHz 5 15 5 3 35 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 1 V DS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 1 Operation in This Area is Limited by R DS(on) DC ms 1s s 1 ms ms s D=.5..1.5-1. -1 - Single Pulse T J =Max rated T C =5-1 1 V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area -.1 single pulse Duty Factor, D=t 1 /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =. /W -5 - -3 - -1 1 t 1, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve 1 1 1 1 single Pulse R thjc =. /W T C = 5 8 8 1E-5 1E- 1E-3.1.1 1 Pulse Width (s) Fig.11 Single Pulse Maximum Power Dissipation 5 5 75 15 15 T C, Case [ ] Fig.15 Maximum Drain Current vs. Case
MDFNG N-channel MOSFET V Physical Dimensions 3 Leads, TO-F Dimensions are in millimeters unless otherwise specified Symbol Min Nom Max A.5.93 b.3.91 b1 1.15 1.7 C.33.3 D 15.7 1.13 E 9..71 e.5 F.3.8 G.8.9 L 1. 13.7 L1.79 3.7 Q.5.9 Q1 3. 3.5 R 3. 3.55 5
MDFNG N-channel MOSFET V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.