MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. Features V DS = 6V V DS = 66V @ T jmax = 11A @ V GS = 1V R DS(ON).55Ω @ V GS = 1V Applications Power Supply PFC High Current, High Speed Switching G D S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 6 V Drain-Source Voltage @ Tjmax V DSS @ T jmax 66 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current ( ) T C=25 o C 11 A T C=1 o C 6.9 A Pulsed Drain Current (1) M 44 A Power Dissipation T C=25 o C P D 49 W Derate above 25 o C.39 W/ o C Peak Diode Recovery dv/dt (3) dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) E AS 72 mj Junction and Storage Range T J, T stg -55~15 Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 Thermal Resistance, Junction-to-Case (1) R θjc 2.55 o C/W 1
MDF11N6 N-channel MOSFET 6V Ordering Information Part Number Temp. Range Package Packing RoHS Status MDF11N6TH -55~15 o C TO-22F Tube Halogen Free Electrical Characteristics (Ta = 25 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 25μA, V GS = V 6 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 25μA 3. - 5. Drain Cut-Off Current SS V DS = 6V, V GS = V - - 1 μa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - 1 na Drain-Source ON Resistance R DS(ON) V GS = 1V, = 5.5A -.45.55 Ω Forward Transconductance g fs V DS = 3V, = 5.5A - 13 - S Dynamic Characteristics Total Gate Charge Q g - 38.4 - Gate-Source Charge Q gs V DS = 48V, = 11A, V GS = 1V (3) - 11.2 - Gate-Drain Charge Q gd - 14 - Input Capacitance C iss - 17 - Reverse Transfer Capacitance C rss V DS = 25V, V GS = V, f = 1.MHz - 6.2 - Output Capacitance C oss - 184 - Turn-On Delay Time t d(on) - 38 - Rise Time t r V GS = 1V, V DS = 3V, = 11A, - 5 - Turn-Off Delay Time t d(off) R G = 25Ω (3) - 76 - Fall Time t f - 33 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - 11 - A Source-Drain Diode Forward Voltage V SD I S = 11A, V GS = V - - 1.4 V Body Diode Reverse Recovery Time t rr - 43 - ns I F = 11A, dl/dt = 1A/μs (3) Body Diode Reverse Recovery Charge Q rr - 4. - μc V nc pf ns Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX)=15 C. 3. I SD 11A, di/dt 2A/us, V DD=5V, R g =25Ω, Starting T J=25 C 4. L=1.9mH, I AS=11A, V DD=5V, R g =25Ω, Starting T J=25 C 2
[A] BV DSS, (Normalized) Drain-Source Breakdown Voltage,Drain Current [A] R DS(ON) [Ω ] MDF11N6 N-channel MOSFET 6V 3 25 2 V gs =5.5V =6.V =6.5V =7.V =8.V =1.V =15.V Notes 1. 25 μs Pulse Test 2. T C =25 1..9.8 15.7 1.6 V GS =1.V V GS =2V 5.5 5 1 15 2 25 V DS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics.4 5 1 15 2 25 3,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.2 1. V GS = V 2. 25 s Pulse Test 1.1 1..9 Fig.3 On-Resistance Variation with.8-5 5 1 15 2 T J, Junction [ o C] Fig.4 Breakdown Voltage Variation vs. 1 * Notes ; 1. V DS =3V 1 1. V GS = V 2. = 25 μa R Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance 3. 2.5 1. V GS = 1 V 2. = 5.5 A 2. 1.5 1..5. -1-5 5 1 15 2 T J, Junction [ o C] 15 1 15 25-55 1 25.1 2 4 6 8 1 V GS [V] Fig.5 Transfer Characteristics.1..2.4.6.8 1. 1.2 1.4 V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
Z θ JC (t), Thermal Response Power (W), Drain Current [A], Drain Current [A] V GS, Gate-Source Voltage [V] Capacitance [pf] MDF11N6 N-channel MOSFET 6V 1 Note : = 11A 12V 3V 48V 8 6 4 2 2 4 6 8 1 12 14 16 18 2 22 24 26 28 3 32 34 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 4 38 36 34 32 3 28 26 24 22 2 18 16 14 12 1 8 6 4 2 C oss C iss C rss.1 1 1 V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ; 1. V GS = V 2. f = 1 MHz 1 2 Operation in This Area is Limited by R DS(on) 1 s 14 1 s 12 1 1 1 ms 1 ms 1 1 1 ms DC 1s 8 6 1-1 4 1-2 Single Pulse T J =Max rated T C =25 1-1 1 1 1 1 2 V DS, Drain-Source Voltage [V] 2 25 5 75 1 125 15 T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig.1 Maximum Drain Current vs. Case 1 1 16 14 12 single Pulse R thjc = 2.55 /W T C = 25 1 D=.5 1 8 1-1 1-2.2.1.5.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =2.55 /W 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve 6 4 2 1E-5 1E-4 1E-3.1.1 1 1 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation 4
MDF11N6 N-channel MOSFET 6V Physical Dimensions 3 Leads, TO-22F Dimensions are in millimeters unless otherwise specified Symbol Min Nom Max A 4.5 4.93 b.63.91 b1 1.15 1.47 C.33.63 D 15.47 16.13 E 9.6 1.71 e 2.54 F 2.34 2.84 G 6.48 6.9 L 12.24 13.72 L1 2.79 3.67 Q 2.52 2.96 Q1 3.1 3.5 R 3. 3.55 5
MDF11N6 N-channel MOSFET 6V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 6